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Memorizer and operating method thereof

一种存储器、存储管的技术，应用在静态存储器、只读存储器、信息存储等方向，能够解决增加电路复杂度和芯片面积、复杂偏置控制等问题，达到增加阱偏置、提高存储器密度的效果

Active Publication Date: 2012-02-01
GIANTEC SEMICON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In its operation, in addition to word lines and bit lines, byte segment source lines, common well lines and word control lines also require complex bias control, thereby increasing circuit complexity and chip area

Method used

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  • Memorizer and operating method thereof
  • Memorizer and operating method thereof
  • Memorizer and operating method thereof

Examples

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Embodiment Construction

[0034] In order to make the technical means, features and effects realized by the present invention easy to understand, further description will be given below in conjunction with the drawings. These descriptions and illustrations of embodiments should not be construed as limitations of the present invention. Obvious changes to the characteristics of the examples of the present invention and the extension of its application principles will also fall within the protection scope of the present invention.

[0035] figure 2 It is a functional block diagram of a nonvolatile memory embodiment of the present invention. Here, non-volatile memory refers to a storage device that can retain its data even without power supply. refer to figure 2 As an example, the non-volatile memory 200 is composed of storage cells arranged in arrays in many rows and columns, thereby forming one or more storage arrays. In the row direction, each row is defined as a "page". For example, the first ro...

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Abstract

The invention relates to a memorizer, which comprises at least one storage array made on a semiconductor substrate, wherein each storage array comprises a page control line and a plurality of pages; each page is sequenced based on lines and comprises a plurality of bytes; the bytes are connected to a page control tube; a drain electrode of the page control tube is connected to the page control line; each of the bytes comprises at least one storage unit; each storage array further comprises a plurality of source electrode controller devices, for offsetting source electrode lines at a preset potential or floating potential; and each of the source electrode lines is connected to all the bytes of a same byte section in the storage array. The invention also provides a reading, erasing and writing method for operating such a memorizer based on bytes.

Description

technical field [0001] The invention relates to a semiconductor memory, in particular to an electrically rewritable programmable read-only memory and an operating method thereof. Background technique [0002] Electrically Rewritable Programmable Read-Only Memory (EEPROM), as a solid-state non-volatile memory, is widely used in communications, equipment control and consumer products, and is widely used in terms of operating speed, durability, power consumption and storage density. Make higher demands. [0003] figure 1 A conventional EEPROM device is shown. The memory device 100 has n pages in total, and each page is a row, for example, the first row 150 defines the first page, the second row 160 defines the second page, and so on. Each page of the memory device 100 has m bytes, for example, the first page 150 includes the first byte 110 to the mth byte 140 . Each byte consists of several bits. The sources of all storage bits are connected to the common terminal 190 and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/24H01L27/115
CPCH01L27/11524G11C16/10G11C16/24G11C16/0433H01L27/115H10B41/35
Inventor 袁庆鹏
Owner GIANTEC SEMICON LTD
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