853 results about "Forming gas" patented technology

A vapor reaction method including the steps of providing a pair of first and second electrodes within a reaction chamber where the pair of electrodes are arranged substantially parallel with each other. The method further includes the steps of placing a substrate in the reaction chamber where the substrate is held by said first electrode so that a first surface of the substrate faces toward the second electrode. A first film forming gas is introduced into the reaction chamber through the second electrode. The first film forming gas is excited to form a first insulating film by vapor deposition. The first insulating film may be silicon nitride. The method may also include the step of introducing a second film forming gas into the reaction chamber through the second electrode to ultimately form a second film. After removing the substrate from the reaction chamber, a cleaning gas may then be introduced through the second electrode to remove unnecessary layers from the inside of the reaction chamber.

A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.

Provided is a substrate processing apparatus that can suppress formation of an Si thin film on the inner wall of a film-forming gas supply nozzle. The substrate processing apparatus comprises a process chamber configured to process a substrate, a heating member configured to heat the substrate, a coating gas supply member including a coating gas supply nozzle configured to supply coating gas into the process chamber, a film-forming gas supply member including a film-forming gas supply nozzle supplying film-forming gas into the process chamber, and a control unit configured to control the heating member, the coating gas supply member, and the film-forming gas supply member. The control unit executes a control such that the coating gas supply nozzle supplies the coating gas to coat a quartz member in the process chamber and the film-forming gas supply nozzle supplies the film-forming gas to form an epitaxial film on the substrate.

A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

The invention provides for methods, devices, and systems for pyrolyzing biomass. A pyrolysis unit can be used for the pyrolysis of biomass to form gas, liquid, and solid products. The biomass materials can be selected such that an enhanced biochar is formed after pyrolysis. The biomass can be pyrolyzed under specified conditions such that a selected biochar core is formed. The pyrolysis process can form a stable biochar core that is inert and/or resistant to degradation. The biochar or biochar core can be functionalized to form a functionalized biochar or functionalized biochar core. Functionalization can include post-pyrolysis treatments such as supplementation with microbes or physical transformations including annealing and/or activation.

A low-power atmospheric pressure plasma source, comprising a plasma-forming region for injection of a plasma-forming gas; an excitation region for injection of a source reactive species downstream of the plasma-forming region; and a narrow converging plasma exit for producing a narrow plasma jet, the source being electrically decoupled from a substrate under treatment by the plasma jet. The present source may found applications for example for skin treatment, etching of skin cancer cells, detachment of cells, removal of skin pigmentation and deposition of temporary organic films.

This invention relates to a method of storing gas using gas hydrates comprising forming gas hydrates in the presence of a water-surfactant solution that comprises water and surfactant. The addition of minor amounts of surfactant increases the gas hydrate formation rate, increases packing density of the solid hydrate mass and simplifies the formation-storage-decomposition process of gas hydrates. The minor amounts of surfactant also enhance the potential of gas hydrates for industrial storage applications.

A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.

A method and apparatus creates gas-enriched fluid that is used to treat wastewater. In one embodiment, the wastewater is withdrawn from a supply of wastewater to be treated, and the wastewater is delivered in an atomized manner to a vessel pressurized with gas to form gas-enriched wastewater. The gas-enriched wastewater is then delivered to the supply of wastewater to be treated.

A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step.

This invention relates to methods for reacting a hydrocarbon, molecular oxygen, and optionally water and/or carbon dioxide, to form synthesis gas. The preferred embodiments are characterized by delivering a substochiometric amount of oxygen to each of a multitude of reaction zones, which allows for optimum design of the catalytic packed bed and the gas distribution system, and for the optimization and control of the temperature profile of the reaction zones. The multitude of reaction zones may include a series of successive fixed beds, or a continuous zone housed within an internal structure having porous, or perforated, walls, through which an oxygen-containing stream can permeate. By controlling the oxygen supply, the temperatures, conversion, and product selectivity of the reaction can be in turn controlled and optimized. Furthermore the potential risks of explosion associated with mixing hydrocarbon and molecular oxygen is minimized with increased feed carbon-to-oxygen molar ratios.

A waste-to-synthesis gas system including: a first gasifier for receiving biomass; a gas distributor for delivering reactant gas and oxygen into the first gasifier in a countercurrent direction to the biomass flow and to define a plurality of reaction regions including a drying region, a pyrolysis region, a gasification region and a combustion region; and, a second gasifier for receiving gases from the plurality of regions of the first gasifier and a gas distributor for delivering reactant gas and oxygen into the second gasifier in a concurrent direction to the flow of gases from the first gasifier. As a result, no carbon chars, oils or tars are expected to be present in the synthesis gas produced.

Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

A process of oil refining and gasification comprising the steps of, (1) petroleum hydrocarbon and coke transfer agent contacting and reacting in reactor, (2) separating produced reaction oil gas and residual coke transfer agent after reaction, (3) coke transfer agent contacting water vapor and oxygen-containing gas under gasification condition to produce formed gas, (4) returning the regenerated coke transfer agent back to reactor in step (1) for circulation use. The process by the invention can not only improve the quality of heavy petroleum hydrocarbon, but also provide cheap raw material gas for hydrogen production process or C1 chemistry.

The invention provides for methods, devices, and systems for pyrolyzing biomass. A pyrolysis unit can be used for the pyrolysis of biomass to form gas, liquid, and solid products. The biomass materials can be selected such that an enhanced biochar is formed after pyrolysis. The biomass can be pyrolyzed under specified conditions such that a selected biochar core is formed. The pyrolysis process can form a stable biochar core that is inert and/or resistant to degradation. The biochar or biochar core can be functionalized to form a functionalized biochar or functionalized biochar core. Functionalized can include post-pyrolysis treatments such as supplementation with microbes or physical transformations including annealing and/or activation.

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

A process for producing liquid fuel from biomass feed stock comprising feeding a biomass feedstock into a one stage atmospheric pressure thermo-catalytic plasma gasifier, contacting the feedstock with oxygen or steam or both to obtain a syngas stream; splitting the syngas stream into first and second streams; conveying the first stream to a water gas shift reactor for producing a modified syngas stream containing CO and hydrogen; the second stream bypassing the water gas shift reactor and being added to the modified syngas steam; optionally reforming natural gas by steam methane reforming to produce a synthetic gas and optionally adding the synthetic gas to the water gas shift reactor; thereby obtaining a syngas having a H₂:CO ratio of about 1:1 to about 2:1; subjecting the syngas to a Fischer Tropsch reaction thereby producing a wax product; and subjecting the product to a hydrogen cracking process to produce liquid fuel; and apparatus therefore.

A LED device formed of LED chips bonded to an exoergic member by the LED chips being bonded to an Au—Sn alloy layer formed on an upper surface of the exoergic member with columnar crystals being formed within the Au—Sn alloy layer extending in a direction perpendicular to the upper surface of the exoergic member. The method of producing the LED device forms an Sn film directly on the upper surface of the exoergic member, an Au film on a lower surface of the LED chips, mounts the LED chips with the Au film thereon onto the Sn film formed on the upper surface of the exoergic member, and the exoergic member with LED chips mounted thereon is heated in an atmosphere in which a forming gas flows, so that the LED chips are bonded to the exoergic member.

The present invention provides an environmentally beneficial process using concentrated sunlight to heat radiation absorbing particles to carry out highly endothermic gas phase chemical reactions ultimately resulting in the production of hydrogen or hydrogen synthesis gases.

It relates to a method and device of changing solar energy to chemical energy. It accumulates the solar energy and changing it to heat energy ranging from 150deg.C-300deg.C, providing reaction heat for the liquid fuels, allowing the middle and low level solar energy changing and stored into high level chemical energy, with the liquid being carbinol or dimethyl ether synthetic fuel, with the catabolite being hydrogen and monoxide formed gas. It can be used for multi purposes, providing fine synthetic fuel and material for customers.