12 results about "Forming gas" patented technology

A forming gas adapter (26) is provided for supplying a forming gas into a housing (10) of a motor vehicle, comprising a connection opening (34) for connecting a fluid line for forming gas, an outlet opening (36) for introducing the forming gas into the housing (10), a fluid channel (32) communicating fluidically with the connection opening (34) and the outlet opening (36), a radially projecting mounting flange (28) from the fluid channel (32) for a fluid-tight connection to a cover (14) that can be attached to the housing (10), at least one clamping leg (46) movably projecting from the fluid channel (32) and passable through a cover opening (16) of the cover (14) for detachable attachment to the cover (14), and an adjusting element (50) for adjusting the at least one clamping leg (46) between a mounting position in which the at least one clamping leg (46) passes through the cover opening (16) of the cover. (14) can be passed through, and a holding position,in which at least one clamping leg (46) prevents relative movement of the mounting flange (28) to the cover (14). This allows for a simple leak test of the motor vehicle housing (10) after repair or maintenance while it is installed.

The utility model discloses a kind of low heat value solid waste burners, belong to burner technical field.The hearth corresponding to core combustion zone in the burner is composed of multiple sections from top to bottom in ladder-shaped distribution, the aperture of the inner wall of upper hearth in adjacent two hearths is less than the aperture of the inner wall of lower hearth, and the furnace wall of upper hearth is equipped with air blowing passage, which is communicated with the cold air collecting box located outside the hearth, to blow the cold air outside to the inner wall of adjacent lower hearth.The scheme is improved by the hearth corresponding to core combustion zone, forms gas film on the inner wall of hearth, can effectively prevent high-temperature molten ash from adhering to it, and the structure is relatively simple, and the running cycle is longer.

Even at low temperatures, a carbon-based film is selectively and perpendicularly deposited on the top of the pattern. [Solution] When a substrate having a pattern is placed inside a processing chamber, a film-forming gas is supplied inside the processing chamber, and plasma is generated from the film-forming gas by high-frequency power to perform a film-forming process on the substrate, the film-forming gas contains multiple types of hydrocarbon gases and noble gases, and when multiple types of hydrocarbon gases are excited and turned into plasma, the composition of the active species generated from each hydrocarbon gas is different.

An exemplary embodiment of the present disclosure provides a method of forming an amorphous carbon-containing film on a substrate housed in a chamber, the method comprising: spraying a silicon-containing source gas into an interior of the chamber; forming a first plasma by supplying a first radio frequency power to the interior of the chamber while spraying the carbon and the plasma forming gas to the interior of the chamber; and forming a second plasma by supplying a second radio frequency power to the interior of the chamber while spraying the plasma forming gas to the interior of the chamber, wherein the first radio frequency power may be greater than the second radio frequency power. Therefore, according to an exemplary embodiment of the present disclosure, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method. In addition, an amorphous carbon-containing film having an increased carbon content and a reduced impurity content can be formed. In addition, an amorphous carbon-containing film having a dense film quality may be formed.

The application discloses a PECVD reaction cavity and a PECVD film forming and cleaning method. The PECVD reaction cavity comprises an inner cavity and an outer cavity, a radio frequency power supply and a vacuum module. The inner cavity comprises an inner cavity door, a PECVD film forming module, a cleaning module, vertically and parallelly arranged heating plates and radio frequency electrode plates. When receiving a film forming instruction, the film forming module controls vacuumizing and controls a driving door plate to move to a position for opening a corresponding door hole, controls film forming gas to enter the inner cavity and opens the radio frequency power supply to make the film forming gas dissociate into plasma to deposit a film layer with a preset thickness on a silicon wafer when a film forming pressure is reached. After the film forming module continuously operates for a first predetermined period or receives a cleaning instruction, the cleaning module controls the driving door plate to move to a position for closing the corresponding door hole, controls cleaning gas to enter the inner cavity and clean the film deposited on each inner wall of the inner cavity after dissociating into plasma, controls the driving door plate to move to the position for opening the corresponding door hole after continuously operating for a second predetermined period and performs cleaning on each inner wall of the inner and outer cavities for a third predetermined period.

The utility model discloses a glass feeding channel curved surface flow guide plate anti-hanging structure which comprises a discharging channel, a side plate is fixed on the outer wall of the discharging channel, a positioning bolt is fixed at the tail end of the side plate, a positioning nut is installed at the tail end of the positioning bolt, the positioning bolt penetrates through a rail window, the rail window is formed in the outer side wall of a feeding channel body, and the positioning nut is installed in the rail window. A mounting plate is fixed to the inner side wall of one end of the feeding channel body and rotationally connected with one end of a side flow guide plate through a rotating shaft, and an electric heating rod is mounted in the side flow guide plate. According to the anti-hanging structure for the curved flow guide plate of the glass feeding channel, the flow guide plate is heated, accumulation or solidification caused by cooling of molten glass is reduced, high-temperature inert gas is attached to the surface of the flow guide plate to blow to form an air film isolation layer, glass oxidation and surface reaction are reduced, and the service life of the glass feeding channel is prolonged. Meanwhile, smooth flowing of the molten glass is guaranteed by adjusting the inclination angle of the flow guide plate and adjusting the distance between the flow guide plate and the discharging channel.

[Problem] To selectively form a carbon-based film on the top part of a pattern of a photoresist film without breaking the pattern. [Solution] A substrate comprises a silicon-containing film and a photoresist film formed on the silicon-containing film. A plurality of patterns having a bottom part are formed on the photoresist film by not allowing the photoresist film to be present at portions. The photoresist film between two adjacent patterns has a top part. The silicon-containing film is exposed at the bottom part of the pattern. Plasma is generated from a film-forming gas containing at least hydrocarbon gas and hydrogen gas, and the substrate is exposed to the plasma to selectively form a carbon-based film on the top part of the photoresist film. The flow rate ratio of the hydrocarbon gas and the hydrogen gas in the film-forming gas is controlled.

This invention provides a sputtering apparatus and a sputtering method. The sputtering apparatus includes: a vacuum chamber in which a target and a substrate are arranged opposite each other; a DC power supply electrically connected to the target; a gas supply source for introducing a film-forming gas containing nitrogen into the vacuum chamber; and a pulsed unit for pulsed current flowing from the DC power supply to the target. Using a sintered gold target material with a binary or higher composition as the target, plasma is generated in the vacuum chamber to form a nitride thin film with a ternary or higher composition containing nitrogen on the substrate.

A kind of column rib-jet hole coupling's laminate cooling structure, it is related to gas turbine turbine blade cooling structure field.To solve the problem that existing double-wall cooling cannot simultaneously adopt thin outer wall and arrange large length-diameter ratio gas film hole to increase cooling efficiency, the present application includes by outer to inner sequentially and interval arrangement outer thin wall, middle layer wall and inner layer wall, and first column rib between outer thin wall and middle layer wall and second column rib between middle layer wall and inner layer wall;The through hole of the outer thin wall and middle layer wall is opened through first column rib between them, and forms gas film hole;The through hole of the middle layer wall and inner layer wall is opened through second column rib between them, and forms impact hole;The backflow hole in the middle layer wall is opened, for interlayer gas flow.The present application is mainly used for the cooling of turbine blade.

The present application relates to a kind of double-wall heat shields with baffle sandwich structure, double-wall heat shield is gas film orifice plate and impact orifice plate and turbulence baffle structure jointly constitutes the double-wall heat shield described;Turbulence baffle structure includes first helical baffle and second helical baffle vertically arranged on gas film orifice plate, and multiple separate turbulence spaces are enclosed by two baffle plates crossing each other;Gas film orifice is arranged at the multiple intersection points formed by the first helical baffle and the second helical baffle on the gas film orifice plate;The present application also provides the heat shield gas film forming method, airflow flows out through multiple fan-shaped holes to form gas film outflow and main flow gas mixing, and forms gas film cover layer on wall surface;The present application can not only strengthen the heat exchange inside heat shield, but also improve gas film cold efficiency, in addition, the impact orifice plate-gas film orifice plate double-wall structure with baffle turbulence fixed has good mechanical properties.

The application discloses a kind of wet dust removal device and method for iron steel slag treatment, it is related to dust removal device technical field, including the dust removal tower of top being provided with spray opening and dust inlet;Gas film isolation mechanism is arranged in dust removal tower;Gas film isolation mechanism includes: first air jet ring and second air jet ring.The application is formed by setting gas film isolation mechanism, gas film is formed in the inner wall of dust removal tower, top gas film vertically covers the upper section of tower wall, middle gas film is inclined to cover the middle and lower section of tower wall, two layers of gas film form gas curtain barrier in tower wall, when dust enters tower with airflow, gas film blocks its direct contact with tower wall, avoids scale formation, reduces cleaning to dust removal tower, guarantees that dust removal tower is long-term and efficient use.

The quality of a protective film used for protecting the periphery of a substrate is improved. A film forming method for forming a protective film on an outer peripheral portion including an inclined surface portion of a substrate using plasma includes: placing a second surface of the substrate having a first surface and a second surface facing each other on a stage having a smaller size than the substrate such that the outer peripheral portion of the substrate protrudes from an outer edge of the stage; at least a portion of the outer peripheral portion of the substrate in the circumferential direction is made to face an electrode; bringing a first shielding structure, which divides the outer peripheral part and a region inside the outer peripheral part, into contact with the first surface of the substrate, and / or bringing a second shielding structure, which divides the outer peripheral part and a region inside the outer peripheral part, into contact with the second surface of the substrate; and forming a protective film on the outer peripheral portion of the substrate by supplying a film-forming gas between the outer peripheral portion of the substrate and the electrode.