The invention relates to an on-
chip fully-integrated terahertz
signal spread spectrum device based on a SiGe
BiCMOS (Bipolar Complementary
Metal-
Oxide-
Semiconductor Transistor) process. The on-
chip fully-integrated terahertz
signal spread spectrum device comprises a filtering frequency doubler, a single-ended differential
Balun, a differential filtering frequency tripler, a differential driving
amplifier, a differential power divider, a differential power
amplifier, a differential filtering frequency doubler, a terahertz
power combiner and a
transmission line waveguide converter.
Radio frequency input of 9.16 GHz-13.75 GHz is externally provided, the
radio frequency input is converted into a differential
signal through the single-ended differential
Balun after being subjected to frequency doubling twice through the two filtering frequency doublers, the differential signal is subjected to frequency doubling triple through the differential filtering frequency tripler, the single-path differential signal obtains
gain through the differential driving
amplifier, the single-path differential signal is converted into two-path signals through the differential power divider, and the two-path signals are transmitted to the output end of the output end of the output end of the output end of the output end of the output end of the output end of the output end of the output end. Differential power amplification and differential filtering frequency doubling are respectively carried out, and then the signals are combined into one path by a terahertz
power combiner, so that a terahertz signal of 220GHz-330GHz is obtained.