77results about How to "Reduced Diffusion Length" patented technology

A device having arrays of semiconductor structures with dimensions, ordering and orientations to provide for light absorption and charge carrier separation. The semiconductor structures are formed with relatively high aspect ratios, that is, the structures are long in the direction of received light, but have relatively small radii to facilitate efficient radial collection of carriers.

A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.

Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.

Provided are perovskite nanocrystalline particle and an optoelectronic device using the same. The perovskite nanocrystalline particle may include a perovskite nanocrystalline structure while being dispersible in an organic solvent. Accordingly, the perovskite nanocrystalline particle in accordance with the present invention has therein a perovskite nanocrystal having a crystalline structure in which FCC and BCC are combined; forms a lamellar structure in which an organic plane and an inorganic plane are alternately stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, the perovskite nanocrystalline particle have a particle size greater than or equal to a Bohr diameter beyond a quantum confinement effect, and simultaneously can implement high emission efficiency and emission wavelength which is almost not dependent on particle size. Furthermore, the perovskite nanocrystalline particle in accordance with the present invention, as a nanoparticle which is dispersible in an organic solvent, is applicable in various electronic devices such as light emitting devices, lasers, solar cells, etc.

The invention provides an efficient perovskite monocrystal light detector and a preparation method thereof. The efficient perovskite monocrystal light detector comprises a perovskite monocrystal and an interdigital electrode arranged on the perovskite monocrystal. The prepared monocrystal perovskite light detector is simple in structure, high in efficiency, high in response speed, stable in work and long in service life. The light detector has the advantages that the preparation process is simple, the production cost is low, and no expensive instrument equipment is needed. Accordingly, effective utilization of perovskite monocrystal materials is promoted, an existing polycrystal perovskite thin film light detector is replaced, and new technical improvement of light detector application will be produced.

A method of forming a resist pattern, including: step (1) in which a resist composition containing a base component (A) that exhibits increased solubility in an alkali developing solution and a compound represented by general formula (C1) is applied to a substrate to form a resist film, step (2) in which the resist film is subjected to exposure, step (3) in which baking is conducted after step (2), and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern; and the resist composition used in step (1):

wherein R¹ represents a group which forms an aromatic ring together with the two carbon atoms bonded to the R¹ group; R² represents a hydrogen atom or a hydrocarbon group; and R³ represents a hydrogen atom, a carboxy group or a hydrocarbon group of 1 to 15 carbon atoms.

The invention relates to a white organic electroluminescent device and a preparation method thereof. The device consists of an ITO glass substrate, a buffer layer, a cavity transport layer, a single-subject blue light layer, a double-subject red light layer, an electronic transport layer and a composite cathode sequentially. Each structural layer is prepared by a vacuum evaporation method. In the structure of the invention, a luminous layer consists of the single-subject blue light layer and the red light layer with a double-subject structure, and the subject of the blue light layer and one of the subjects of the red light layer are made of the same material, and the other material of the subject of the red light layer is the same as the material of the electronic transport layer. The device with the structure has higher luminous efficiency, can effectively disperse excitons, enhances carrier infusion and transport balance, and inhibits color error and efficiency reduction under a higher drive current. With the structure, the white organic electroluminescent device with the structure can be widely applied on a hi-fi organic full-color display device.

A power storage device comprising a positive electrode which includes in a positive electrode active material layer, lithium iron phosphate particles whose surface is supported by a carbon material and whose half width of the X-ray diffraction peak is less than or equal to 0.17°, or greater than or equal to 0.13° and less than or equal to 0.165′ or whose particle size is greater than or equal to 20 nm and less than 50 nm or greater than or equal to 30 nm and less than 40 nm; or a method for manufacturing a power storage device comprising the steps of mixing the lithium iron phosphate particles, a conduction auxiliary agent, and a binder so as to be a paste, and applying the paste on a current collector, thereby manufacturing a positive electrode.

Provided are a method for manufacturing a perovskite nanocrystal particle light-emitter where an organic ligand is substituted, a light-emitter manufactured thereby, and a light emitting device using the same. A method for manufacturing an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter where an organic ligand is substituted may comprise the steps of: preparing a solution including an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter, wherein the organic-inorganic-hybrid perovskite nanocrystal particle light-emitter comprises an organic-inorganic-hybrid perovskite nanocrystal structure and a plurality of first organic ligands surrounding the organic-inorganic-hybrid perovskite nanocrystal structure; and adding, to the solution, a second organic ligand which is shorter than the first organic ligands or includes a phenyl group or a fluorine group, thereby substitutes the first organic ligands with the second organic ligand. Thus, since energy transfer or charge injection into the nanocrystal structure increases through ligand substitution, it is possible to further increase light emitting efficiency and increase durability and stability by means of a hydrophobic ligand.

A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C_4-20 fluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E). The polymer (A) includes a unit structure selected from unit structures of Formula (1), Formula (2), and Formula (3);

The invention belongs to the technical field of nano material preparation, in particular to a g-C3N4/MXene/CuZnIn2S4 nano composite photocatalyst and a preparation method thereof. CuZnIn2S4 which is taken as a widely-used photocatalyst can improve the photocatalytic activity by adjusting the morphology and increasing the number of exposed active sites; and MOF heterojunction has high specific surface area and rich pore structure, and can solve the problem of flexible coordination between complex multiphase metals and ligands and provide favorable conditions for the construction of efficient photocatalysts. The preparation method of the composite photocatalyst includes introducing g-C3N4 and MXene into the CuZnIn-MOF heterojunction; and vulcanizing to obtain a target product, namely, the g-C3N4/MXene/CuZnIn2S4 nano composite photocatalyst. The method has the advantages that the CuZnIn2S4 prepared by taking MOF as a template has an ultra-large specific surface area, provides more loadingsites for coupling of the CuZnIn2S4 and the g-C3N4, and thus the exposure number of the active sites is increased, and the introduction of the MXene can obviously improve the conduction capability ofcarriers, so that the photocatalytic activity of the photocatalyst is obviously improved.

A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

The invention discloses a ternary single crystal positive electrode material, and a preparation method and application thereof. The preparation method comprises the following steps: mixing ternary polycrystalline micro-powder, conducting heating, carrying out first sintering, and conducting cooling to obtain an intermediate; carrying out jet milling on the intermediate to obtain a single crystal material, conducting washing with water, and conducting centrifuging and drying to obtain a material of which the residual alkali content is lower than 1500ppm; and adding a coating agent into the material, conducting heating, conducting sintering for the second time, and conducting cooling to obtain the ternary single crystal positive electrode material. Polycrystalline materials are opened into single crystal small particles by utilizing airflow crushing equipment, so that the electrochemical performance of the materials is improved, and the energy density of the materials is improved.

The invention discloses a manufacturing method of a quasi-black silicon high-efficiency solar cell with an ultralow nanometer reflection-reducing structure. The manufacturing method comprises the following steps of: A, carrying out phosphorus diffusion on a p-type solar cell silicon wafer; B, manufacturing a nanometer column by a chemical corrosion method; C, cleaning the surface of the nanometer column to remove residues; D, carrying out the phosphorus diffusion on a silicon wafer diffusion surface again; and E, carrying out SiNx:Hx:H surface passivation and reflection-reducing thin-film deposition on the silicon wafer to manufacture a negative electrode and a positive electrode of a solar cell, and an aluminum back surface field so as to finish the manufacturing of the quasi-black silicon high-efficiency solar cell with the ultralow nanometer reflection-reducing structure. Through the manufacturing method disclosed by the invention, the solar cell can be combined with the existing technology, and the cost of a device is not increased. Compared with a traditional solar cell, the manufactured solar cell has improved efficiency; in addition, the manufacturing method is simple and has excellent stability.

Provided are methods and initial structures for fabricating corrosion resistant steels that incorporate an aluminum rich corrosion resistant surface layer. The initial structures utilize layering and/or patterning for reducing the effective diffusion length D_eff to a value well below the total thickness of the aluminum alloy protective layer X₁ by providing vertical and/or lateral laminated structures that provide ready sources of Fe atoms during subsequent heat treatment processes.

A semiconductor device includes a substrate and a semiconductor layer formed on the substrate. The substrate has: a flat region provided in a main surface thereof; a first indentation region provided in a portion of the main surface different from the flat region and formed with first recesses; and a second indentation region provided between the first indentation region and the flat region, formed with second recesses, and having a lower probability of occurrence of growth nuclei than the first indentation region and a higher probability than the flat region in the case where a crystal of a semiconductor is grown on the main surface.

The invention provides a GeOx material, a preparation method thereof and an application of the GeOx material in a lithium ion battery. The GeOx material prepared by the invention is in a three-dimensional hollow sphere structure, and the diameter is 200-300nm. According to the GeOx material provided by the invention, the shape and crystal structure of GeOx can be effectively controlled by adjusting the pH of the solution by a one-step hydrothermal synthesis method so as to improve the performance of the battery. The material obtained has the advantages of high capacity, good cyclicity and the like. The material can be widely applied to negative electrode materials of the lithium ion battery. The battery capacity after 50 times of circulation under the current density of 500mA/g is still 1000mAh/g which is greatly improved compared with the capacity of the negative electrode made of a carbon material.