Efficient perovskite monocrystal light detector and preparation method thereof

A photodetector and perovskite technology, applied in the field of photodetectors, can solve the problems of short lifespan, unstable working state, low performance of polycrystalline perovskite thin film photodetectors, etc., and achieve low production cost and low defects. The effect of density of states, excellent thermal stability

Active Publication Date: 2016-08-17
SHAANXI NORMAL UNIV
View PDF2 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the shortcomings of existing polycrystalline perovskite thin-film photodetectors such as low performance, unstable working state, and sh...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Efficient perovskite monocrystal light detector and preparation method thereof
  • Efficient perovskite monocrystal light detector and preparation method thereof
  • Efficient perovskite monocrystal light detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] The invention provides a high-efficiency perovskite single-crystal photodetector, and also relates to a preparation method of the detector. The specific preparation method includes the following steps:

[0030] A high-efficiency perovskite single crystal photodetector comprises a perovskite single crystal and interdigitated electrodes arranged on the perovskite single crystal. Perovskite single crystals with ABX 3 Single crystal of perovskite structure, where A is CH 3 NH 3 + 、H 2 N-CH=NH 2 + , (CH 3 ) 4 N + 、C 7 h 7 + 、Cs + or C 3 h 11 SN 3 2+ ; B is Pb, Ge or Sn; X is Cl, Br or I.

[0031] The thickness of the interdigitated electrodes is 1nm-1cm, the finger width is 10nm-1cm, the spacing is 10nm-1cm, the finger length is 10nm-10cm, and the photosensitive area is 200nm 2 ~400cm 2; The interdigitated electrodes are metal or metal-containing alloy electrodes, such as silver (Ag), copper (Cu), gold (Au), aluminum (Al), sodium (Na), molybdenum (Mo), tun...

Embodiment 1

[0039] 1) Soak the cultivated perovskite single crystal with anhydrous ether to clean and remove the impurities remaining on the surface of the single crystal during the cultivation process;

[0040] 2) Polishing the cleaned single crystal surface, after polishing, use gas purging to remove fine particles such as powder remaining on the single crystal surface during the polishing process;

[0041] 3) Subsequently, the single crystal is placed in a vacuum drying oven to dry;

[0042] 4) Fix the metal mask plate with interdigitated pattern on the polished and cleaned perovskite single crystal side;

[0043] 5) Thermally evaporate and deposit interdigitated gold electrodes with a thickness of 1 nm, a finger width of 10 nm, a spacing of 10 nm, and a finger length of 10 nm on one side of the single crystal with a fixed mask;

[0044] 6) The prepared finished single crystal perovskite photodetector is sealed and packaged for testing.

Embodiment 2

[0046] 1) soaking the cultured perovskite single crystal with cyclohexane to clean and remove impurities remaining on the surface of the single crystal during the culture process;

[0047] 2) Polishing the cleaned single crystal surface, after polishing, use anhydrous ether ultrasonic cleaning to remove fine particles such as powder remaining on the single crystal surface during the polishing process;

[0048] 3) Subsequently, the single crystal is placed in a vacuum drying oven to dry;

[0049] 4) Fix the metal mask plate with interdigitated pattern on the polished and cleaned perovskite single crystal side;

[0050] 5) Magnetron sputtering on one side of the single wafer with the mask fixed has a thickness of 50nm, a finger width of 50nm, a spacing of 50nm, and an interdigital silver electrode with a finger length of 50nm;

[0051] 6) The prepared finished single crystal perovskite photodetector is sealed and packaged for testing.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Spacingaaaaaaaaaa
Login to view more

Abstract

The invention provides an efficient perovskite monocrystal light detector and a preparation method thereof. The efficient perovskite monocrystal light detector comprises a perovskite monocrystal and an interdigital electrode arranged on the perovskite monocrystal. The prepared monocrystal perovskite light detector is simple in structure, high in efficiency, high in response speed, stable in work and long in service life. The light detector has the advantages that the preparation process is simple, the production cost is low, and no expensive instrument equipment is needed. Accordingly, effective utilization of perovskite monocrystal materials is promoted, an existing polycrystal perovskite thin film light detector is replaced, and new technical improvement of light detector application will be produced.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detectors, and relates to a high-efficiency perovskite single crystal photodetector and a preparation method thereof. Background technique [0002] Optical detector is a new type of detection technology, which is widely used in environmental monitoring, astronomy, national defense and military, and sky communication. The photodetectors currently used are mainly photodiodes, which are large in size, high in operating voltage, and expensive in equipment. [0003] In recent years, a perovskite-based ABX 3 (X represents a halogen element) materials have attracted great attention in the field of photovoltaic research in recent years, and are widely used in the technical research of high-efficiency solar cells. After just 6 years of development, the highest certified efficiency of perovskite solar cells has reached 21% so far. Because of its rapid photoelectric conversion efficiency and extreme...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/00H10K85/30H10K30/00Y02E10/549
Inventor 刘生忠刘渝城杨周
Owner SHAANXI NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap