154results about How to "Reduce the density of defect states" patented technology

The invention provides a large-area perovskite thin sheet which is convenient to machine, easy to prepare and totally different from the prior art and is obtained through cutting and preparation and application of the large-area perovskite thin sheet. The preparation method comprises the steps that a single crystal or a polycrystalline perovskite crystal with the length and the width both larger than 15 mm or the diameter larger than 15 mm is sliced up, and the large-area perovskite thin sheet with the area larger than 200 mm<2> and the thickness smaller than 1 mm is obtained. By means of the crystal cutting technology, the problem that a sedimentary single crystal is difficult to assemble to form a target can be solved, single crystal samples with different crystal face orientations can be obtained according to actual requirements, and only a sample with a specific crystal face orientation can be obtained through epitaxial growth. Meanwhile, according to single crystal slicing samples prepared through the crystal cutting technology, optimum contact can be selected according to energy band positions and characteristics of the single crystal slicing samples, and the optimized device performance is obtained. The perovskite thin sheet prepared through the crystal cutting technology has greater advantages from the aspects of convenience for obtaining crystal faces and obtaining optimized device performance.

The invention discloses a self-driven wide-spectral-response silicon-based hybrid heterojunction photoelectric sensor and a preparation method therefor. The photoelectric sensor comprises a metal back electrode, an N type silicon substrate, an N type silicon nanowire array, an organic polymer semiconductor thin film and a sensor positive electrode, wherein the hybrid photoelectric sensor is characterized in that the N type silicon nanowire array and the organic polymer semiconductor thin film form three-dimensional heterojunction contact, so that the transmission path of photo-generated carriers is effectively shortened; the separation efficiency is improved; a surface / interface composite effect is reduced through interface alkylation processing; the silicon-based micro-nano structure is taken as the main light absorption layer and the generation and transmission layers for the photo-generated carriers as well; and a P type organic semiconductor thin film is processed to be used as a hole transport layer. The photoelectric sensor provided by the invention has the characteristics of self powering, wide spectral response, low cost large-area preparation, high photoelectric response speed and the like.

The invention provides an HIT solar cell which comprises a P-type polycrystalline silicon substrate (P p-Si). A first intrinsic hydrogenated amorphous silicon layer (i a-Si:H), an N-type hydrogenated amorphous silicon layer (N a-Si:H) and a first transparent conducting thin film layer are sequentially deposited on the front surface of the P-type polycrystalline silicon substrate and the upper surface of the transparent conducting thin film layer is a front face electrode; an intrinsic hydrogenated amorphous silicon layer (i a-Si:H), a P-type hydrogenated amorphous silicon layer (P a-Si:H) and a second transparent conducting thin film layer are sequentially deposited on the back face of the P-type polycrystalline silicon substrate and the lower face of the second transparent conducting thin film layer is a back face electrode. The HIT solar cell greatly reduces cell production cost, the solar cell is not limited by a circular mono-crystalline silicon substrate any more, and the plane use rate of a solar cell module can be effectively improved.

The invention relates to a multi-step deposition-based efficient crystalline silicon heterojunction solar cell electrode structure and a preparation method thereof. The structure comprises an N-type crystalline wafer; multiple non-crystalline silicon intrinsic layers are arranged on both the front and back of the N-type crystalline wafer; non-crystalline silicon doping layers are arranged on the outer sides of the non-crystalline silicon intrinsic layers on the front and back; RCO conductive films are arranged on the outer sides of the non-crystalline silicon doping layers; a plurality of Ag electrodes are arranged on the outer sides of the TCO conductive films; an H plasma processing layer is arranged between every two adjacent non-crystalline silicon intrinsic layers; and an H plasma processing layer is arranged between the outermost non-crystalline silicon intrinsic layer and non-crystalline silicon doping layer. The structure adopts multiple steps to deposit the non-crystalline silicon intrinsic layers, and a step of H plasma processing is added after each step of deposition, so that the H atom content in the film can be increased to improve the passivation effect, for the crystalline silicon surfaces, of the non-crystalline silicon intrinsic layers, and the defect mode density of the non-crystalline silicon intrinsic layers can be reduced to enhance the photoelectric conversion efficiency of solar cells.

The invention provides a method for preparing a silicon heterojunction solar cell containing a composite emission layer. The method includes the steps that an amorphous silicon back field N is deposited on one face of a substrate C on which a double-faced intrinsic amorphous silicon passivation layer I is deposited, an amorphous silicon layer P2 with the uniform structure is prepared on the face opposite to the amorphous silicon back field N under the conditions that doping concentration, hydrogen dilution and power density are low, a nanocrystalline silicon layer P1 with the uniform structure is prepared under the conditions that the doping concentration, the hydrogen dilution and the power density are improved, and an amorphous silicon / nanocrystalline silicon composite structure formed by the two silicon films serves as the emission layer of the silicon heterojunction solar cell. Materials have the advantages of being high in transmittance and conductivity through the structure, on the basis, the passivation effect of the surface of crystalline silicon can be improved, short wave response and output characteristics of the cell are improved, and the method for preparing the silicon heterojunction solar cell is simple and easy to carry out.

The invention discloses a halide perovskite single crystal, a preparation method and application of the single crystal in preparation of an X-ray detector, and belongs to the technical field of X-raydetectors. The invention develops a method for controlling the growth of halide perovskite single crystals through solvent evaporation, the growth rate of the crystals is constant mainly by regulatingand controlling the growth temperature, the opening area of a solution and other factors, and the perovskite single crystals with lower crystal defect state density and higher carrier mobility-carrier lifetime deposition are grown. Polyoxyethylene is used for passivating surface defects of the perovskite single crystal, so that the crystal surface defects and surface leakage current are remarkably reduced, and the crystal has higher resistivity and lower noise current signals. The sensitivity of the prepared X-ray detector under 120 keV hard rays reaches 1274 [mu] C.Gyair.cm <2>, the lowest detection amount is as low as 0.56 [mu] Gyair.s <-1>, the requirements of medical imaging application are met, and the X-ray detector can be applied to metal material component analysis and flaw detection.

The invention provides a metal oxide thin film transistor and a manufacturing method thereof. The metal oxide thin film transistor comprises a substrate, a gate, a gate insulating layer, a metal oxide semiconductor layer and a barrier layer hierarchically arranged on the substrate, a passivation layer arranged at the outermost layer, as well as a source and a drain connected with the metal oxide semiconductor layer respectively; a diffusion element containing insulator thin film layer adjacent to the barrier layer is arranged on the side opposite to the metal oxide semiconductor layer; and the diffusion element is any one of fluorine, nitrogen and hydrogen elements. The manufacturing method comprises the steps of arranging the diffusion element containing insulator thin film layer adjacent to the barrier layer on the side opposite to the metal oxide semiconductor layer, wherein the diffusion element is any one of fluorine, nitrogen and hydrogen elements; and diffusing the fluorine, nitrogen or hydrogen element to the metal oxide semiconductor layer of the thin film transistor via a thermal diffusion method, till reaching the metal oxide semiconductor thin film and the interface of the gate insulating layer.

The invention belongs to the micro nano manufacture technical field, and discloses a full-inorganic perovskite solar energy cell comprising a substrate glass, an ITO conductive layer and a photoanode, a luminous absorption layer and a carbon counter electrode layer; the photoanode is a CdS nanorod array structure having aperture structures; the luminous absorption layer is a CsPbBr3 inorganic perovskite layer embedded in the aperture structures of the photoanode, thus tightly contacting with the photoanode; the carbon counter electrode layer is paved on the top surface of the ITO conductive layer and the top surface of the luminous absorption layer, and formed by screen printing films. The contact areas between the perovskite layer and an electron transmission layer can be obviously improved, thus increasing the charge transmission channels; UV ozone processing is carried out for the grown CdS nanorod array, thus obviously improving the CdS film interface characteristics, reducing crystal grain boundaries, reducing electron defect density of states, reducing unfavorable charge recombination, and improving the electron transmission characteristics.

The invention relates to an epitaxial structure of an LED (light-emitting diode) with a GaN (gallium nitride)-based vertical structure and a manufacturing method thereof. The manufacturing method adopts the following technical scheme which at least comprises the following steps: (1) manufacturing a ZnO buffer layer on an epitaxial growth substrate; (2) using MOCVD (metal-organic chemical vapor deposition) equipment to grow an extrinsic doped GaN buffer layer on the ZnO buffer layer substrate; (3) continuing to grow a high-temperature N-type Si-doped GaN layer, a periodical multilayer luminous zone-quantum well, an electronic barrier layer and a P-type Mg-doped GaN layer in the MOCVD equipment; and (4) carrying out charge carrier exciton on the Mg doped in the P-type GaN layer. The invention has the following advantages: a complicated ultraviolet laser peeling process and dear ultraviolet laser peeling equipment are not used when the substrate is peeled; in the manufacturing method, a damage-free mechanical-separation-free substrate peeling technology is adopted; the equipment is low in requirements; and the epitaxial wafers can be processed in batch.

The invention belongs to the technical field of solar cells, provides a perovskite / silicon laminated solar cell and a preparation method thereof, and aims to solve the problems that synchronous passivation of multiple types of defects cannot be realized by perovskite material interface passivation in the prior art, the suppression efficiency of carrier interface recombination is low and the like. An organic ionic modifier passivation layer is introduced between a perovskite light absorption layer and a hole transport layer of the perovskite / silicon laminated cell, so that synchronous and efficient passivation of multiple types of defects of an interface is realized, and the defect state density is remarkably reduced; and meanwhile, lattice mismatch at the interface is effectively prevented, and the defect passivation effect is further optimized. In conclusion, the perovskite / silicon laminated solar cell has lower defect state density and higher short-circuit current density and open-circuit voltage, and the overall performance of the perovskite / silicon laminated solar cell is remarkably improved; and moreover, the organic ionic modifier passivation layer is mature in synthesis process and low in price, and has the advantages of high efficiency, stability and low cost.

The invention discloses a high-speed deposition method on a P / I interface of a microcrystal silicon solar battery, which comprises controlling glowing power and silicane concentration by ultra-high frequency plasma enhanced chemical vapor deposition method and depositing a first intrinsic microcrystal silicon film layer on a P player with a first deposition rate; adjusting glowing power and silicane concentration without extinguishment of plasma glow and growing a second intrinsic microcrystal silicon film layer on the first intrinsic microcrystal silicon film layer with a second deposition rate, wherein the first deposition rate is smaller than the second deposition rate. The invention uses lower glower power and lower silicane concentration to depose on P layer with smaller deposition rate to obtain high crystallized intrinsic microcrystal silicon film layer with low defect, so as to improve battery efficiency.

The invention relates to a silicon-based solar cell and a preparation method thereof and belongs to the technical field of solar cells. The preparation method comprises the steps of cleaning of a n-type silicon sheet, surface passivation treatment of the n-type silicon sheet, preparation of a first PEDOT:PSS layer, preparation of a second PEDOT:PSS layer, preparation of a third PEDOT:PSS layer, preparation of a fourth PEDOT:PSS layer, preparation of a fifth PEDOT:PSS layer, preparation of a front electrode, and preparation of a back electrode. The photoelectric conversion efficiency of the silicon-based solar cell reaches up to 12.4%.

The invention discloses a silicon solar cell and a manufacturing method of the silicon solar cell. The manufacturing method of the silicon solar cell includes the following steps of firstly providing a metallurgical grade silicon wafer substrate and cleaning the metallurgical grade silicon wafer substrate, secondly etching the metallurgical grade silicon wafer substrate and conducting purification on the metallurgical grade silicon wafer substrate, thirdly conducting morphology modification on the surface of a silicon nanometer array, fourthly conducting morphology modification on the surface of the silicon nanometer array again, and fifthly coating the silicon nanometer array with conjugated organic matter. According to the manufacturing method of the silicon solar cell, the metallurgical grade silicon materials are applied to preparation of the solar cell, surface morphology treatment and surface purification treatment are conducted on the metallurgical grade silicon materials by fully applying the wet metal auxiliary chemical etching technology, and a silicon nanometer structure is formed. Passivating treatment is conducted on organic materials and the silicon nanometer structure, electrical performance and optical performance of a metallurgical grade silicon cell are improved, and charge separation performance and charge transmission performance are improved. Stability of the cell is improved through modification to organic-inorganic hybrid heterojunction, and the charge transmission capacity of the solar cell is enhanced.

The invention provides a perovskite LED containing an organic-inorganic hybrid perovskite monocrystal light emitting layer, and a preparation method of the perovskite LED. The perovskite LED comprisesa CH3NH3PbX3 perovskite monocrystal light emitting layer, a p-type hole transport layer, a transparent conductive anode, an n-type electron transport layer, an electron injection layer and electrodes, wherein X=Cl, Br or I; the p-type hole transport layer is formed on the CH3NH3PbX3 perovskite monocrystal light emitting layer along a first direction; the transparent conductive anode is formed onthe p-type hole transport layer; the n-type electron transport layer is formed on the CH3NH3PbX3 perovskite monocrystal light emitting layer along a second direction opposite to the first direction; the electron injection layer is formed on the n-type electron transport layer; and the electrodes are formed on the electron injection layer. The invention further provides the preparation method of the perovskite LED. The perovskite LED and the preparation method effectively reduce the defect state density of the surface of the light emitting layer, improve the photoelectric property and stabilityof perovskite CH3NH3PbX3, and realize efficient radiative recombination of carriers under electric injection.

The invention relates to a preparation method for methylammonium iodide, belonging to the technical fields of organic-inorganic hybrid materials and photoelectric materials. According to the method in the invention, under the protection of nitrogen, a crude product is purified by using an alcoholic solution of organic amine capable of providing an alkaline environment; the alcoholic solution of organic amine facilitates disproportionation of I2 to produce iodide ions and effectively inhibits generation of I2, so the content of elemental iodine in the prepared methyl ammonium iodide is greatly reduced; a perovskite film prepared by using the methyl ammonium iodide as a precursor has large crystal size, low defect state density and long carrier life; and a solar cell prepared from the perovskite film has photoelectric conversion efficiency.

The invention provides a thin film transistor. The thin film transistor comprises a grid electrode, an active layer, a source electrode and a drain electrode which are formed on a substrate, wherein the active layer contains an ion-doped oxide, doped ions are of p-track electron configuration structures, and the p-track energy level of the doped ions is higher than 2 p-track energy level of oxygen ions in the oxide so as to enable the valence-band top of the active layer after doping to be higher than the energy level of oxygen vacancy formed in the active layer. Correspondingly, the invention further provides a manufacturing method of the thin film transistor, an array substrate and a display device. The active layer of the thin film transistor is mainly made of the ion-doped oxide, the stability of the thin film transistor can be improved, a shading structure is not needed to be added on the display device, and a manufacturing process is simplified.

The invention discloses an antimony-selenide thin-film solar battery using black phosphorene as a conducting material and a preparation method thereof. The solar battery is characterized in that the battery comprises a metal positive electrode 1, an n type heavily-doped black phosphorene film 2, an n type molybdenum disulfide 3, an intrinsic hydrogenated nano crystalline silicon film 4, a p type antimony selenide film 5, a p type heavily-doped black phosphorene substate 6, and a metal negative electrode 7. According to the invention, the solar battery has the following advantages: the molybdenum disulfide being a direct band-gap semiconductor material is used to form a buffer layer, the antimony selenide having a high absorptivity is used as absorption layer, the intrinsic hydrogenated nano crystalline silicon is used for realizing passivation of a pn junction interface, so that the defect-mode density of the interface is reduced; and because the black phosphorene is used as the conducting material, the series resistance of the battery is reduced, the light current is increased substantially, and the photoelectric conversion efficiency of the antimony-selenide thin-film solar battery is improved.

The invention discloses a monocrystalline silicon wafer with a rounded pyramid structure and a preparation method, and mainly relates to the field of monocrystalline texturing. The preparation methodcomprises the steps of pre-cleaning, texturing, rounding treatment, hydrofluoric acid cleaning, slow pulling, drying, and the like. In the rounded treatment process, respective characteristics of nitric acid CP and ozone CP are integrated. Pyramid rounding treatment is performed on a textured silicon wafer by using the scheme, so that the pyramid top and the pyramid valley are enabled to be smooth, the defect state density can be reduced when the amorphous silicon film is deposited, the passivation quality of the silicon wafer can be enhanced, the minority carrier lifetime can be prolonged, and thus higher cell conversion efficiency can be obtained.

The invention provides a method for passivating perovskite. The method comprises the following steps: preparing a perovskite precursor solution; carrying out annealing on a substrate, wherein the substrate comprises an electron transport layer; coating the perovskite precursor solution on the substrate and carrying out heating to generate a perovskite thin film; and forming a cyclic ether passivation layer on the perovskite thin film to obtain a perovskite thin film modified by the cyclic ether. The method for preparing the perovskite layer through the N-methyl pyrrolidone and passivating andmodifying the perovskite layer through the cyclic ether is simple in process; the solar cell assembled by the perovskite prepared through the method is high in efficiency and good in repeatability; and the stability is obviously improved.

The invention discloses a novel perovskite function material and application thereof in a photoelectric device. The novel perovskite function material is applied to alloyed or modified perovskite materials based on amidine molecules, and the perovskite materials are ABX3 perovskite materials, wherein A is univalent organic or inorganic positive ions, B is divalent metal positive ions, and X is univalent negative ions. The chemical expression of the amidine molecules is R-C(=NH)NH2, wherein R is any one of -NH2, -CH3 and -C6H5. According to specific application, the A-site positive ions in theperovskite materials are replaced with the positive ions of the amidine molecules, or the amidine molecules serve as an additive to be added to a base of the ABX3 perovskite materials. According to the novel perovskite function material and application thereof in the photoelectric device, the amidine molecules of a specific chemical structure are introduced into the ABX3 perovskite-based materials, the fluorescent lifetime of a carrier can be remarkably prolonged, the perovskite photoelectric function material excellent in optical and electrical performance can be obtained, the reparation process is simple, and the cost is low.

The invention provides an all-inorganic perovskite solar cell based on an inorganic perovskite nanocrystalline interface layer and a preparation method and an application thereof. The method is characterized in that the lead bromide is spin-coated on a surface of a conductive glass-supported titanium dioxide electron transport layer by the multi-step spin coating technique, a high-purity CsPbBr3 light absorbing layer is prepared by spin coating of cesium bromide in multiple steps, n-hexane solution with the inorganic perovskite nanocrystals is then spin-coated onto the CsPbBr3 layer for interfacial modification, and lastly, a carbon coated back cell is assembled into the all-inorganic perovskite solar cell. The method is advantaged in that high hole conductivity and energy level adjustability of the inorganic perovskite nanocrystal are fully utilized, electron-hole separation is promoted, energy loss is reduced, perovskite is treated with the n-hexane solvent, the perovskite grain sizeis increased, defect density and charge recombination are reduced, energy conversion efficiency of the cell is effectively improved, the preparation process is simple, cost is controllable, the material optimization space is large, and the commercial production prospect is further wide.

The invention relates to a chelated perovskite material, a film, a device, and a preparation method and application thereof. The catalyst is prepared by adding a chelating agent into a perovskite solution, wherein the chelating agent comprises a complexing agent or chelating agent capable of generating coordination with metal ions by coordination atoms, or a chelate or complex formed by coordination reaction of the complexing agent or chelating agent and the corresponding metal ions; according to the material, body defects and surface defects of the perovskite thin film are effectively passivated, and non-radiative recombination of carriers is reduced, so that the efficiency and long-term operation stability of the perovskite solar cell are effectively improved.

The invention provides a manufacturing method of a low-temperature polysilicon thin film. On a basis that a solid-phase crystallization environmental temperature is maintained at 550-700 DEG C, one or more light sources with photon energy ranges of 2.5-5.0eV are added. According to the invention, under a relatively low temperature, the crystallization rate of the polysilicon thin film is improved, and the defect state density is reduced, such that the low-temperature polysilicon thin film can be manufactured. The polysilicon thin film provided by the invention has relatively high crystallization rate. A thin-film transistor back-plate produced by using the polysilicon thin film has a mobility enough for driving AMOLED, and relatively high homogeneity. Therefore, a semiconductor thin film material for producing high-quality AMOLED panels can be ensured.

The invention discloses a biological macromolecule modified perovskite solar cell. The solar cell structure comprises a conductive substrate, an electron transporting layer, a light absorption layer,a hole transporting layer and a metal electrode layer in sequence from bottom to top, wherein the electron transporting layer is composed of a lower dense electron transporting layer and an upper mesoporous electron transporting layer, the mesoporous electron transporting layer is modified by biological macromolecules, and the biological macromolecules are one or more of protein, nucleic acid, lipids and saccharides. The mesoporous electron transporting layer is mesoporous TiO<2> prepared through a hydrothermal method. According to a modification method of the mesoporous electron transportinglayer, the biological macromolecules are added into a mesoporous TiO<2> hydrothermal reaction precursor solution, and the hydrothermal method is adopted to prepare the biological macromolecule modified mesoporous TiO<2> electron transporting layer on the dense electron transporting layer. According to the solar cell, the nontoxic biological macromolecule modified mesoporous electron transporting layer is adopted to improve electron transporting characteristics, and therefore the performance of the solar cell is improved.

The invention discloses a perovskite-based thin film solar cell, and relates to the field of solar cells. A composite modification layer includes a modification bottom layer made of Y2O3, ZnO or zinctin oxide, and a modification upper layer made of Al2O3. The modification bottom layer reduces the density of defect state of a TiO2 electron transport layer, so that the efficiency of the cell can beenhanced; and the modification upper layer has rich methyl, so that the enhancement of the quality of a perovskite thin film can be realized, and the photoelectric performance of devices can be increased. Through the arrangement of the composite modification layer, the contact of titanium dioxide and perovskite can be effectively obstructed, so that damages of the titanium dioxide to perovskite materials under lighting conditions can be reduced, the stability of the cell can be enhanced, and the service life of the cell can be prolonged. A preparation method of the cell is also disclosed. Thepreparation method is simple and convenient in operation and low in equipment requirement, and can produce the cell with high efficiency and high quality.

The invention discloses a high stability perovskite film and a manufacturing method thereof. The high stability perovskite film comprises a perovskite light absorbing layer and a hydrophobic interfacelayer which is formed by modifying a benzoyl cyanide solution and wraps the outer surface of the perovskite light absorbing layer. The manufacturing method comprises the following steps of preparingbenzoyl cyanide into a surface modification solution; and immersing the perovskite film in the surface modification solution for 30 to 1800 seconds, and carrying out annealing processing and drying at70 to 200 DEG C. In the invention, immersive surface modification is performed on a conventional perovskite film, the perovskite light absorbing layer can be passivated, the quality of the perovskitelight absorbing layer is improved, and the defect density of the perovskite light absorbing layer is reduced; the photoelectric conversion efficiency of a perovskite solar cell manufactured by the high stability perovskite film is increased; and benzoyl cyanide is taken as a surface modification material so that the outer surface of the perovskite light absorbing layer forms the hydrophobic interface layer, which is good for enhancing the hydrophobicity of the high stability perovskite film, and then the stability of the manufactured perovskite solar cell is increased.

The invention discloses a grain boundary passivation method of a perovskite solar cell. The grain boundary passivation method comprises the following steps: firstly, synthesizing nanoscale C6H6NNaO6Pb quantum dots by utilizing a room-temperature solution reaction which is simple to operate; and uniformly dispersing the synthesized quantum dots in an anti-solvent in the process of preparing the perovskite thin film by a one-step method, so that the quantum dots are uniformly distributed in the perovskite thin film to realize perovskite grain boundary passivation. According to the invention, the perovskite grain boundary defect state density can be effectively reduced, and the quality of the perovskite thin film is improved, so that the efficient and stable perovskite solar cell is obtained. The preparation method is simple in process and low in cost, and has a good application prospect in the aspect of developing high-performance perovskite solar cells.

The invention provides a method for growing a pure inorganic, large-size and iodine-containing CsPbIxBr3-x perovskite single crystal with a tunable optical band gap by using a ternary mixed solvent. According to the method, the inverse temperature solubility characteristic of CsPbIxBr3-x in a ternary solvent is utilized, and the large-size single crystal grows in a stable solution formed by the ternary solvent. The method comprises the steps: respectively mixing and dissolving lead bromide (PbBr2) and cesium iodide (CsI) in DMSO according to a molar ratio of 1:1, and continuously dropwise adding DMF and GBL solvents to obtain a precursor solution dissolved by the ternary mixed solvent; and sealing the solution and then gradually heating to 90 DEG C or below, and growing a large-size CsPbIxBr3-x perovskite single crystal according to the inverse solubility principle, wherein x is the doping content of I and is any numerical value selected from 0-3, and the absorption spectrum ranges from 560 nm to 700 nm.

The invention provides a silicon-based heterojunction solar cell passivation layer early stage processing method. A plasma etching method is added after a silicon chip cleaning texturing step so as to make natural oxides or other impurities formed on the surface of a silicon chip removed. Meanwhile, micro etching is performed on the nanometer-sized tip of a pyramid textured structure of the silicon chip so as to make a smooth and round form thereof recovered. A passivation layer process is finally finished in a vacuum-maintained condition. Secondary pollution during the process is prevented. The passivation effects of an amorphous silicon passivation layer are thus improved. The passivation quality is guaranteed. The cell conversion efficiency is further improved.

The invention provides a heterojunction solar cell and a manufacturing method thereof. The heterojunction solar cell comprises an N-type monocrystalline silicon wafer. A first intrinsic amorphous silicon layer, a third intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a first transparent conductive film and a first electrode are sequentially formed on the front side of the N-type monocrystalline silicon wafer. A second intrinsic amorphous silicon layer, a fourth intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a second transparent conducting film and a second electrode are sequentially formed on the back side of the N-type monocrystalline silicon wafer. The first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are formed through a first intrinsic PECVD process with the process gas being silane not doped with hydrogen. The third intrinsic amorphous silicon layer is formed through a second intrinsic PECVD process with process gases including carbon dioxide, hydrogen and silane, wherein the volume ratio of the carbon dioxide to the silane increases in a range of 0.1-0.6 as time increases. The fourth intrinsic amorphous silicon layer is formed through a third intrinsic PECVD (plasma enhanced chemical vapor deposition) process with process gases comprising hydrogen and silane. According to the invention, the cell conversion efficiency can be improved.