Large-area perovskite thin sheet and preparation and application thereof

A perovskite, large-area technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., can solve problems such as perovskite crystal optoelectronic devices that have not yet appeared, achieve low defect density of states, and facilitate processing , high efficiency effect

Inactive Publication Date: 2015-12-30
SHAANXI NORMAL UNIV +1
View PDF7 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitations of its raw material preparation and processing technology, optoelectronic devices with perovskite crystals have not yet appeared

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-area perovskite thin sheet and preparation and application thereof
  • Large-area perovskite thin sheet and preparation and application thereof
  • Large-area perovskite thin sheet and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] The preparation of large-area perovskite flakes is as follows.

[0044] 1. Using the method of continuous growth, the fresh CH 3 NH 3 I and PbI 2 The mixed solution was continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process, so as to obtain a single crystal CH with a size of 15 mm × 15 mm × 5 mm. 3 NH 3 PB 3 ;

[0045] 2. Using the method of mortar cutting, in which the speed of the sand line movement is 3mm / s, the large-size perovskite crystal is cut to obtain an area of ​​200mm 2 , perovskite single crystal flakes with a thickness of 100 μm;

[0046] 3. Use ultrasonic cleaning to remove the mortar on the surface of the perovskite single wafer;

[0047] 4. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during the cutting process and increase the flatness of...

Embodiment 2

[0054] The preparation of large-area perovskite flakes is as follows.

[0055] 1. Using the method of continuous growth, the fresh CH 3 NH 3 Br and PbBr 2 The mixed solution is continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process to obtain a CH with a size of 50mm×50mm×15mm. 3 NH 3 PbBr 3 crystal;

[0056] 2. Using the sand wire cutting method, in which the speed of the sand wire movement is 3mm / s, the large-size perovskite crystal is cut to obtain an area of ​​500mm 2 , perovskite flakes with a thickness of 500 μm;

[0057] 3. Use ultrasonic cleaning to remove the mortar on the surface of the perovskite single wafer;

[0058] 4. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during the cutting process and increase the flatness of the perovskite single crystal su...

Embodiment 3

[0065] The preparation of large-area perovskite flakes is as follows.

[0066] 1. Using the method of continuous growth, the fresh CH 3 NH 3 Cl and PbCl 2 The mixed solution is continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process, so as to obtain a single crystal CH with a size of 20mm×20mm×10mm 3 NH 3 PbCl 3 ;

[0067] 2. Using the method of diamond wire cutting, in which the speed of diamond wire movement is 5mm / s, the large-size perovskite single crystal is cut to obtain an area of ​​400mm 2 , perovskite single crystal flakes with a thickness of 400 μm;

[0068] 3. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during the cutting process and increase the flatness of the perovskite single crystal surface, so as to facilitate the assembly of subsequent devices. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
areaaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a large-area perovskite thin sheet which is convenient to machine, easy to prepare and totally different from the prior art and is obtained through cutting and preparation and application of the large-area perovskite thin sheet. The preparation method comprises the steps that a single crystal or a polycrystalline perovskite crystal with the length and the width both larger than 15 mm or the diameter larger than 15 mm is sliced up, and the large-area perovskite thin sheet with the area larger than 200 mm<2> and the thickness smaller than 1 mm is obtained. By means of the crystal cutting technology, the problem that a sedimentary single crystal is difficult to assemble to form a target can be solved, single crystal samples with different crystal face orientations can be obtained according to actual requirements, and only a sample with a specific crystal face orientation can be obtained through epitaxial growth. Meanwhile, according to single crystal slicing samples prepared through the crystal cutting technology, optimum contact can be selected according to energy band positions and characteristics of the single crystal slicing samples, and the optimized device performance is obtained. The perovskite thin sheet prepared through the crystal cutting technology has greater advantages from the aspects of convenience for obtaining crystal faces and obtaining optimized device performance.

Description

technical field [0001] The invention relates to perovskite flakes, in particular to a large-area perovskite flake and its preparation and application. Background technique [0002] So far, high-efficiency perovskite solar cells have been limited to small-area polycrystalline perovskite films (approximately 0.3 cm 2 ), the area enlargement will lead to a sharp drop in the conversion efficiency of the device (the fill factor becomes sharply smaller). In the case of using the existing perovskite solar cell preparation methods, the conversion efficiency of large-area perovskite cells cannot be kept stable. At the same time, the existence of a large number of grain boundaries in polycrystalline films will cause the recombination of carriers and affect the further improvement of battery performance; the grain boundaries will also cause the adsorption of chemicals and affect the stability of perovskite. Using perovskite crystal thin films to prepare photovoltaic devices is an eff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/54H01L51/42H01L51/46H01L51/48
CPCY02E10/549
Inventor 刘生忠杨周刘渝城任小东张静杨栋曹越先王书博李灿
Owner SHAANXI NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap