The invention provides a large-area
perovskite thin sheet which is convenient to
machine, easy to prepare and totally different from the prior art and is obtained through
cutting and preparation and application of the large-area
perovskite thin sheet. The preparation method comprises the steps that a
single crystal or a polycrystalline
perovskite crystal with the length and the width both larger than 15 mm or the
diameter larger than 15 mm is sliced up, and the large-area perovskite
thin sheet with the area larger than 200 mm<2> and the thickness smaller than 1 mm is obtained. By means of the
crystal cutting technology, the problem that a sedimentary
single crystal is difficult to assemble to form a target can be solved,
single crystal samples with different
crystal face orientations can be obtained according to actual requirements, and only a sample with a specific crystal
face orientation can be obtained through epitaxial growth. Meanwhile, according to single crystal
slicing samples prepared through the crystal
cutting technology, optimum contact can be selected according to energy band positions and characteristics of the single crystal
slicing samples, and the optimized device performance is obtained. The perovskite thin sheet prepared through the crystal cutting technology has greater advantages from the aspects of convenience for obtaining crystal faces and obtaining optimized device performance.