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HIT solar cell and preparing method thereof

A technology of solar cells and batteries, which is applied in the field of solar cells, can solve problems such as high cost and reduce production costs, and achieve the effects of reducing production costs and improving plane utilization

Active Publication Date: 2014-07-02
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a HIT solar cell and its preparation method for the high cost caused by using monocrystalline silicon as the substrate in the current technology. The battery uses polycrystalline silicon instead of monocrystalline silicon as the substrate material, and through cleaning , aluminum gettering and other processes to process polycrystalline silicon substrates, not only reduces the use of high-cost monocrystalline silicon, greatly reduces production costs, but also makes solar cells no longer limited to circular monocrystalline silicon substrates, Can effectively improve the planar utilization of solar cell modules

Method used

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  • HIT solar cell and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The preparation process of the HIT solar cell structure mainly includes:

[0031] 1) Cleaning process

[0032] Use the standard RCA cleaning process to treat the P-type polysilicon substrate to remove particles, organic matter and metal impurities on the surface of the P-type polysilicon substrate. The polysilicon substrate used in this experiment has a thickness of 117um, a resistivity of 2.5Ω cm, and a minority The lifespan is 1.1us. After cleaning, the minority carrier diffusion length of the polysilicon wafer measured by ELYMAT technology is 31.18 μm;

[0033] 2) Aluminum gettering process

[0034] First, use a vacuum coating machine to vapor-deposit an aluminum layer with a thickness of 1.3 μm on any side of the P-type polysilicon substrate by thermal evaporation (the evaporated aluminum side is the front side of the silicon wafer). Then anneal the silicon wafer: raise it from room temperature to 800°C in an argon atmosphere, then keep it warm for two hours, the...

Embodiment 2

[0044] The other steps of this embodiment are the same as those of Embodiment 1, the difference is the aluminum gettering process in step 2):

[0045] First, an aluminum layer with a thickness of 1-2 μm is vapor-deposited on any surface of the cleaned P-type polysilicon substrate, and the evaporated aluminum surface is the front of the silicon wafer; The temperature was raised to 700°C, kept for 3 hours, then annealed and cooled to room temperature, the heating rate and cooling rate were both 5°C / min; then the P-type polysilicon substrate was soaked in NaOH solution with a mass fraction of 10% for 20 minutes, The aluminum layer and alloy layer on the surface are etched away.

[0046] The obtained HIT solar cell utilizes an instrument (KEITHLEY-2611) at a power of 100mV / cm 2 Under white light irradiation, the measured efficiency is 18.5%.

Embodiment 3

[0048] The other steps of this embodiment are the same as those of Embodiment 1, the difference is the aluminum gettering process in step 2):

[0049] First, an aluminum layer with a thickness of 1-2 μm is evaporated on any surface of the cleaned P-type polysilicon substrate, and the evaporated aluminum surface is the front side of the silicon wafer; Raise to 750°C, hold for 3 hours, then anneal and cool down to room temperature, the heating rate and cooling rate are both 10°C / min; then soak the P-type polysilicon substrate with 10% NaOH solution for 20 minutes, etch Remove the aluminum layer and alloy layer on the surface. The performance of the battery is the same as in Example 2.

[0050] As can be seen from Table 1, the present invention uses a polycrystalline silicon wafer as a substrate, and while the cell efficiency basically reaches the domestic advanced level, the cost is greatly reduced (the price of a two-inch double-throwing monocrystalline silicon wafer with a th...

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Abstract

The invention provides an HIT solar cell which comprises a P-type polycrystalline silicon substrate (P p-Si). A first intrinsic hydrogenated amorphous silicon layer (i a-Si:H), an N-type hydrogenated amorphous silicon layer (N a-Si:H) and a first transparent conducting thin film layer are sequentially deposited on the front surface of the P-type polycrystalline silicon substrate and the upper surface of the transparent conducting thin film layer is a front face electrode; an intrinsic hydrogenated amorphous silicon layer (i a-Si:H), a P-type hydrogenated amorphous silicon layer (P a-Si:H) and a second transparent conducting thin film layer are sequentially deposited on the back face of the P-type polycrystalline silicon substrate and the lower face of the second transparent conducting thin film layer is a back face electrode. The HIT solar cell greatly reduces cell production cost, the solar cell is not limited by a circular mono-crystalline silicon substrate any more, and the plane use rate of a solar cell module can be effectively improved.

Description

Technical field: [0001] The invention relates to the technical field of solar cells, in particular to a HIT solar cell and a preparation method thereof. Background technique: [0002] In 1992, Sanyo Corporation invented the HIT (Heterojunction with intrinsic Thinlayer) solar cell. The so-called HIT solar cell is a hybrid solar cell made of crystalline silicon substrate and amorphous silicon film. Its structure has non-doped or intrinsic The amorphous silicon thin film layer structure. HIT solar cells have the characteristics of high conversion efficiency and good stability. In 2013, Sanyo set a world record with an efficiency of 24.7%, and the level of domestic batteries is between 19% and 20%. However, in order to better realize the industrialization of HIT solar cells, in terms of its current development status, it is not only necessary to further improve the conversion efficiency of solar cells, but also urgently need to reduce the production cost of solar cells. There...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0747H01L31/20
CPCY02E10/50H01L31/0747H01L31/202Y02P70/50
Inventor 陈贵锋王弘张辉曹哲张浩恩张娇贾少鹏罗鸿志
Owner HEBEI UNIV OF TECH
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