The invention discloses a
passivation contact
cell structure and a preparation method thereof, the structure comprises a
silicon substrate, and the back surface of the
silicon substrate comprises a
metal contact area and a non-
metal contact area; a
metal contact area on the back face of the
silicon substrate is of a suede structure, and the suede structure is sequentially provided with a back face first tunneling
oxide layer, a back face first doped
polycrystalline silicon layer, a back face second tunneling
oxide layer, a back face second doped
polycrystalline silicon layer, a back face aluminum
oxide layer, a back face
silicon nitride layer and a back face
electrode in a stacked mode from inside to outside. A non-metal contact area on the back face of the silicon substrate is of a polished
face structure, and a first back face tunneling oxide layer, a first back face doped
polycrystalline silicon layer, a back face aluminum oxide layer and a back face
silicon nitride layer are sequentially arranged on the polished
face structure in a stacked mode from inside to outside. According to the battery structure, parasitic absorption can be reduced, current
gain is brought,
diffusion of silver ions in
electrode slurry can be inhibited, and metal recombination is improved; the interface
contact resistance can be obviously improved, and the
cell efficiency can be improved.