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3610results about "Logic circuits using elementary logic circuit components" patented technology

Semiconductor device

A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal. By varying the electrical conductivity of the switch element, the state of connection of the via with the wire of the first interconnection layer and the state of connection of the via with the wire of the second interconnection layer may be variably set to a shorted state, an open-circuited state or to an intermediate state A two-state switch element includes an ion conductor for conducting metal ions interposed between the first and second electrodes. The second electrode is formed of a material lower in reactivity than the first electrode. The electrical conductivity across the first and second electrodes is changed by the oxidation-reduction reaction of the metal ions. There are provided first and second transistors of opposite polarities, connected to the first electrode, and third and fourth transistors of opposite polarities, connected to the second electrode.
Owner:NEC CORP

FPGA with register-intensive architecture

Field programmable gate arrays (FPGA's) may be structured in accordance with the disclosure to have a register-intensive architecture that provides, for each of plural function-spawning LookUp Tables (e.g. a 4-input, base LUT's) within a logic block, a plurality of in-block accessible registers. A register-feeding multiplexer means may be provided for allowing each of the plural registers to equivalently capture and store a result signal output by the corresponding, base LUT of the plural registers. Registerable, primary and secondary feedthroughs may be provided for each base LUT so that locally-acquired input signals of the LUT may be fed-through to the corresponding, in-block registers for register-recovery purposes without fully consuming (wasting) the lookup resources of the associated, base LUT. A multi-stage, input switch matrix (ISM) may be further provided for acquiring and routing input signals from adjacent, block-interconnect lines (AIL's) and/or block-intra-connect lines (e.g., FB's) to the base LUT's and/or their respective, registerable feedthroughs. Techniques are disclosed for utilizing the many in-block registers and/or the registerable feedthroughs and/or the multi-stage ISM's for efficiently implementing various circuit designs by appropriately configuring such register-intensive FPGA's.
Owner:LATTICE SEMICON CORP

Differential sensing and TSV timing control scheme for 3D-IC

This disclosure uses a differential sensing and TSV timing control scheme for 3D-IC, which includes a first chip layer of the stacked device having a detecting circuits and a relative high ability driver horizontally coupled to the detecting circuits. A sensing circuit is coupled to the detecting circuits by a horizontal line, a first differential signal driver is coupled to the sensing circuit, horizontally. The Nth chip layer of the stacked device includes a Nth relative high ability driver and a Nth differential signal driver formed on the Nth chip layer. The Nth relative high ability driver is vertically coupled to the first relative high ability driver through one relative low loading TSV and (N−2) TSVs to act as dummy loadings. The TSV and (N−2) TSVs penetrate the stacked device from Nth chip layer to first chip layer. The TSV shares same configuration with the (N−2) TSVs. The Nth differential signal driver is vertically coupled to the first differential signal driver through a pair of TSVs and (N−2) pairs of TSVs, vertically. The pair of TSVs and the (N−2) TSVs penetrate the stacked device from the Nth chip layer to the first chip layer. Each of TSV is formed between a first and a second chip layers. Each of TSV is formed between any adjacent two chip layers of the stacked device.
Owner:NATIONAL TSING HUA UNIVERSITY
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