88 results about "Resonant-tunneling diode" patented technology

A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.

A double barrier resonant tunneling diode (RTD) is formed and integrated with a level of CMOS / BJT / SiGe devices and circuits through processes such as metal-to-metal thermocompressional bonding, anodic bonding, eutectic bonding, plasma bonding, silicon-to-silicon bonding, silicon dioxide bonding, silicon nitride bonding and polymer bonding or plasma bonding. The electrical connections are made using conducting interconnects aligned during the bonding process. The resulting circuitry has a three-dimensional architecture. The tunneling barrier layers of the RTD are formed of high-K dielectric materials such as SiO2, Si3N4, Al2O3, Y2O3, Ta2O5, TiO2, HfO2, Pr2O3, ZrO2, or their alloys and laminates, having higher band-gaps than the material forming the quantum well, which includes Si, Ge or SiGe. The inherently fast operational speed of the RTD, combined with the 3-D integrated architecture that reduces interconnect delays, will produce ultra-fast circuits with low noise characteristics.

Three configurations of double barrier resonant tunneling diodes (RTD) are provided along with methods of their fabrication. The tunneling barrier layers of the diode are formed of low band offset dielectric materials and produce a diode with good I-V characteristics including negative differential resistance (NDR) with good peak-to-valley ratios (PVR). Fabrication methods of the RTD start with silicon-on-insulator substrates (SOI), producing silicon quantum wells, and are, therefore, compatible with main stream CMOS technologies such as those applied to SOI double gate transistor fabrication. Alternatively, Ge-on-insulator or SiGe-on-insulator substrates can be used if the quantum well is to be formed of Ge or SiGe. The fabrication methods include the formation of both vertical and horizontal silicon quantum well layers. The vertically formed layer may be oriented so that its vertical sides are in any preferred crystallographic plane, such as the 100 or 110 planes.

An antenna comprising a plurality of negative resistance devices and a method for making same comprising employing a removable standoff layer to form the gap between the microstrip antenna metal and the bottom contact layer.

A vector underwater sound transducer of resonant tunneling bionic type is prepared as applying semiconductor etching technique to each bottom-middle part of semiconductor substrate to be structure of cross cantilever beam, fixing micro cylindrical body at center of cross cantilever beam and setting resonant tunneling diode separately at end portions of four beams on cross cantilever beam.

A latch circuit includes first and second resonant tunneling diodes coupled in series, and a reset portion having a photodiode portion responsive to varying photonic energy for switching between first and second states which are different. When the photodiode portion is in its first state, the reset portion normalizes a voltage across each of the resonant tunneling diodes.

A microstrip stabilized quantum well resonance-tunneling generator which generates electromagnetic waves for millimeter and submillimeter wavelength range is provided The generator includes a resonant tunneling semiconductor quantum well diode, and a microstrip resonator. The resonant tunneling diode, the microstrip resonator and interconnecting lines and junctions are fabricated as a monolithic integrated device on a common substrate. As a result, the monolithic integrated device provides the expansion of the operation frequency range toward the terahertz region as a result of reduction of the parasitic inductance as well as of minimizing the other parasitic parameters of the electric circuitry connecting the resonant tunneling diode and resonator.

An oscillation device has a resonant tunneling diode formed by interposing a gain medium including a first barrier layer, a quantum well layer and a second barrier layer between a first thickness adjusting layer and a second thickness adjusting layer. The oscillation device also has a switch for switching the polarity of a bias voltage being applied to the resonant tunneling diode. The first thickness adjusting layer and the second thickness adjusting layer have different thicknesses. Thus, a single oscillation device is driven to oscillate with different oscillation frequencies.

An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.

A resonant tunneling diode based high-sensitivity detector with low dark current comprises a substrate, an emitting electrode contact layer, an emitting region, an isolating layer, a double-potential-barrier structure, an absorption layer, a collector region, an upper electrode and a lower electrode, wherein the emitting electrode contact layer is manufactured on the substrate; the emitting region is manufactured on the emitting electrode contact layer, and a table board is formed on the other side of the emitting electrode contact layer; the isolating layer is manufactured on the emitting region; the double-potential-barrier structure is manufactured on the isolating layer; the absorption layer is manufactured on the double-potential-barrier structure; the collector region is manufactured on the absorption layer; the upper electrode is manufactured on the collector region; the lower electrode is manufactured on the table board on the other side of the emitting electrode contact layer. According to the resonant tunneling diode based high-sensitivity detector with the low dark current, the dark current can be further reduced; with the adoption of npin type doping, the low dark current can be obtained by the resonant tunneling diode based near-infrared detector.

The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.

An inverting flip-flop (F / F) circuit type monostable-bistable transition logic element (MOBILE) circuit that uses resonant tunneling diodes (RTDs) and can prevent a malfunction caused by low peak-to-valley current ratio (PVCR) characteristics of the RTD includes an input data conversion circuit and an inverting F / F circuit. The input data conversion circuit receives input data and converts a logic level of the input data according to a logic level of output data of the MOBILE circuit. The inverting F / F circuit inverts a logic level of data output from the input data conversion circuit and outputs the output data. Accordingly, even when a logic level of input data changes from LOW to HIGH, the logic level of output data can be maintained HIGH in the inverting F / F type MOBILE circuit constructed using silicon semiconductor based RTDs with a small PVCR. Therefore, it is possible to enhance the performance of the inverting F / F circuit type MOBILE circuit.

The present invention discloses a quantum dot resonant tunneling diode for weak light detection and a detection method thereof, wherein, the quantum dot resonant tunneling diode comprises GaAs responsive to visible light or an InGaAs photon absorption region responsive to infrared, self-assembling quantum dots, a thin AlAs double barrier layer, and a GaAs potential well layer. The combination formed by the self-assembling quantum dots, the thin AlAs double barrier layer and the GaAs potential well layer allows the quantum dots to directly participate in the resonant tunneling process, the amplifying capacity of the resonant tunneling process upon photo-generated carriers is greatly improved. The detection method is as follows: filling carriers to the quantum dots to form a metastable state before incident light detection, and further improving the photoresponse capacity of devices. The diode and the detection method have the advantages that: the structure of the device is simple, the size and the density of the quantum dots are within a general growth range, and the manufacture is easy; the device obtains the photon detection with ultra high sensitivity at liquid nitrogen temperature.

A gated resonant tunneling diode (GRTD) is disclosed including a metal oxide semiconductor (MOS) gate over a gate dielectric layer which is biased to form an inversion layer between two barrier regions, resulting in a quantum well less than 15 nanometers wide. Source and drain regions adjacent to the barrier regions control current flow in and out of the quantum well. The GRTD may be integrated in CMOS ICs as a quantum dot or a quantum wire device. The GRTD may be operated in a negative conductance mode, in a charge pump mode and in a radiative emission mode.

A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably at the 65 nm node and smaller, which is different from other conventional quantum transistors that require other, completely different process technologies and operating conditions. To accomplish this, the GRTD uses a body of a first conduction type with a first electrode region and a second electrode region (each of a second conduction type) formed in the body. A channel is located between the first and second electrode regions in the body. A barrier region of the first conduction type is formed in the channel (with the doping level of the barrier region being greater than the doping level of the body), and a quantum well region of the second conduction type formed in the channel. Additionally, the barrier region is located between each of the first and second electrode regions and the quantum well region. An insulating layer is formed on the body with the insulating layer extending over the quantum well region and at least a portion of the barrier region, and a control electrode region is formed on the insulating layer.

Molecular resonant tunneling diode (RTD) devices that include a molecular linker or bridge between two carbon nanotube (CNT) leads. Such devices include organic material self-assembled between two leads to yield RTD device behavior without the use of metallization of the organic material. Such devices alleviate the aforementioned problems associated with similar devices. Semiconducting carbon nanotubes (CNTs) may be used, and electrical functionality of the device is provided, not by intrinsic bistable properties of the bridge molecule, but by the crossing of resonant levels with the band edges of the leads.

To provide a resonator that includes a resonant tunneling diode. A resistor layer provided in series with the resonant tunneling diode, a dielectric provided in contact with the resonant tunneling diode, and first and second conductors that are placed so that the resonant tunneling diode and the dielectric are sandwiched therebetween are provided. Further, a resonator area where the dielectric is sandwiched between the first and second conductors, and a resistor area where the resonant tunneling diode and the resistor layer are sandwiched between the first and second conductors are provided in parallel with each other.

The invention discloses a p-type quantum well infrared detector with magnified quantum. The detector comprises a quantum dot resonant tunneling diode and a p-type quantum well active layer and is characterized in that the p-type quantum well active layer is integrated on an overburden layer of an intrinsic GaAs quantum dot of the quantum dot resonant tunneling diode. The detector adopts the core mechanism that the p-type quantum well active layer is utilized to absorb medium wave and long wave infrared and holes produced are captured by quantum dots close to a double barrier of the resonant tunneling diode; resonant tunneling current is changed intensively so as to cause the device of the invention to have both high quantum amplified factor of the quantum dot resonant tunneling diode and the response capability of normal incidence infrared wave band of the p-type quantum well infrared detector, thus overcoming the two key problems that restrain the application performance of the quantum well infrared detector, namely, normal incidence abstention and low quantum efficiency.

To provide a resonator that includes a resonant tunneling diode that can generate an electromagnetic wave. In the resonator, the resonant tunneling diode and a resistor layer are sandwiched between first and second conductors in a direction approximately perpendicular to the in-plane direction of the resonant tunneling diode. Further, the in-plane cross-sectional area of the resistor layer is larger than that of the resonant tunneling diode. Further, the width of the in-plane cross-sectional area of the resistor layer is more than twice as large as the skin depth of an electromagnetic wave to be caused to resonate.

The invention discloses a micro-strip slot antenna based on the resonant tunneling mechanism and belongs to the field of antennae. The antenna comprises a round patch antenna body provided with an H-shaped slot, and a resonant tunneling diode (RTD), wherein the RTD serves as an exciting device and is used for generating terahertz (THz) waves, the round patch antenna body provided with the H-shaped slot serves as a transmission device and used for transmitting the THz waves generated by the RTD out, the top electrode of the RTD is connected with the round patch antenna body, and the bottom electrode of the RTD is connected with the stratum. The micro-strip slot antenna based on the resonant tunneling mechanism has great significance in fields such as super-speed data link transmission, wireless communication and military national defense.

The invention relates to a super-junction power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with an integrated resonant tunneling diode, and belongs to the field of semiconductor powerdevices. The MOSFET comprises a drain end electrode, an N type substrate, an N type doping area, an insulating layer I, a P type doping area I, a P type doping area II, an N+ doping area I, a P+ doping area I, a gate oxide layer, a polysilicon gate, a source end electrode, a P+ doping area II, an N+ doping area II, an insulating layer II and a floating electrode. Through adoption of the super-junction power MOSFET, the reverse recovery charge of a device can be reduced greatly under the condition of not increasing the specific on-resistance and drain current of the device, and the technological difficulty is not increased.

The invention discloses a detuning feed seam antenna RTO terahertz wave source and a manufacturing process. The detuning feed seam antenna RTO terahertz wave source comprises a left electrode and a right electrode arranged on a main substrate, wherein the left side edge of the right electrode is embedded in a concave edge formed on the lower part of the right side of the left electrode, and a silicon dioxide layer is symmetrically arranged between upper and lower opposite end faces of two ends of each of the left electrode and the right electrode to ensure that air cavities communicating with one another are formed among the main substrate, the silicon dioxide layer, the left electrode and the right electrode, a convex block protruding towards the right electrode is formed in the middle part of the right side edge of the left electrode, and grooves are symmetrically formed in the left electrode positioned on two sides of the convex block, wherein the main substrate for forming bottom surfaces of the air cavities is positioned below the two grooves, a resonant tunneling diode is arranged between the bottom surface of the convex block and the upper end surface of the corresponding main substrate and has a knife structure, and the knife handle part of the knife structure is transversely inserted into a concave edge formed on the lower part of the left side of the right electrode. The detuning feed seam antenna RTO terahertz wave source disclosed by the invention can achieve oscillation of an oscillator at different frequency bands by changing the position of an RTD in the oscillator.

The invention provides a monolithic integrated manufacturing method for indium phosphide-based resonant tunneling diodes and high-electron-mobility transistors, which comprises the following basic steps: orderly growing high-electron-mobility transistor and resonant tunneling diode materials on a semiconductor material indium phosphide (InP) substrate with molecular beam epitaxial equipment; etching the surface of an epitaxial wafer with electron beams, and forming the mesa of the resonant tunneling diodes through optical lithography and wet etching; realizing the isolation between devices through the optical lithography and the wet etching to form isolated channels; manufacturing upper and lower electrodes of the resonant tunneling diodes and source electrodes and drain electrodes of the high-electron-mobility transistors through metal ohmic contact, and then annealing; manufacturing grid electrodes through electron beam lithography, dry etching and wet etching; manufacturing metal terminals through dry etching, optical lithography and electron beam evaporation; and finally, interconnecting the resonant tunneling diodes and the high-electron-mobility transistors through a benzocyclobutene flatness process and metal wiring. The method has the characteristics of simple process, strong operability, high finished product ratio and the like, and has good practicability.

The invention relates to the technical field of diodes, especially a resonant tunneling diode based on an InGaAs / AlAs material. InGaAs with different In components is prepared on an InP substrate layer, and a graded transmission layer structure is formed. The diode can reduce the transit time of electrons in a diode, and improves the working speed. The diode employs InxGal-xAs (x=0.8) as a potential well material, and can reduce a start voltage and a peak voltage. Non-doped InGaAs layers are respectively deposited between a transmission layer and a first barrier layer, and between a collection region and a second barrier layer, and an isolation region is formed, thereby preventing foreign matters in a heavily-doped region from diffusing towards a DBS region. According to the invention, an apparent negative differential resistance phenomenon can be observed under the room temperature, and the diode is very high in frequency and working speed. The diode can be applied to a high-speed digital circuit, a high-frequency oscillation device and the assembly of a high-quality display more effectively.