The invention relates to a super-junction power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with an integrated resonant tunneling diode, and belongs to the field of semiconductor powerdevices. The MOSFET comprises a drain end electrode, an N type substrate, an N type doping area, an insulating layer I, a P type doping area I, a P type doping area II, an N+ doping area I, a P+ doping area I, a gate oxide layer, a polysilicon gate, a source end electrode, a P+ doping area II, an N+ doping area II, an insulating layer II and a floating electrode. Through adoption of the super-junction power MOSFET, the reverse recovery charge of a device can be reduced greatly under the condition of not increasing the specific on-resistance and drain current of the device, and the technological difficulty is not increased.