34results about How to "Will not increase the difficulty of the process" patented technology

The invention relates to a low-attenuation and few-mode fiber. A core layer has three layers and comprises three claddings from inside to outside; the relative refractive index difference delta 1 of a first core layer is 0.34%-0.45%, R1 ranges from 4.5 mu m to 7.5 mu m, the relative refractive index difference delta 2 of a second core layer is 0.20%-0.29%, R2ranges from8 mu m to 10 mu m, the relative refractive index difference delta 3 of a third core layer is 0.15%-0.24%, R3 ranges from 10 mu m to 13 mu m, the relative refractive index difference delta 4 of a first cladding is minus 0.02%-0.02%, R4 ranges from14 mu m to 18 mu m, the second cladding is a concave cladding, the relative refractive index difference delta 5 of the second cladding is minus 0.8%-minus 0.4%, R5 ranges from19 mu m to 31 mu m, and a third cladding is a pure quartz glass layer. According to the low-attenuation and few-mode fiber, four stable transmission modes are supported within 1550 nm, small DGD is provided, the process is simple, and the manufacturing is easy; at the same time, the low-attenuation and few-mode fiber has low attenuation and better bending resistance.

The invention discloses a metal oxide thin film transistor and a preparation method thereof. The metal oxide thin film transistor is composed of a grid electrode, an insulating layer, a transition layer, a semiconductor layer, a drain electrode and a source electrode, wherein the grid electrode, the insulating layer, the transition layer and the semiconductor layer are sequentially connected with each other from bottom to top; the drain electrode and the source electrode are positioned on the semiconductor layer; the transition layer and the semiconductor layer are prepared by means of sputtering with the same target being adopted in the process of sputtering, the material of the target is (In2O3)x(Ga2O3)y(ZnO)z, wherein x, y and z are not less than 0 but not more than 1, and x+y+z is equal to 1; and the transition layer and the insulating layer include excellent contact property so as to effectively lower carrier trap density between contact interfaces of the insulating layer and the transition layer as well as enhance output current of the transistor and improve electrical stability. The source electrode and the drain electrode can form outstanding ohmic contact with the semiconductor layer, thereby effectively reducing off-state current, raising on/off ratio of current and improving electronic carrier mobility.

The invention relates to a grading constant current charging method with voltage-controlled pulse. A section of a pulse charging and discharging process with the depolarization function is attached when storage battery voltage rises to a gassing point at each grade of constant current charging stage. Charging current amplitude of the pulse charging and discharging process is equal to constant current amplitude at the same grade, and discharging current amplitude value is 0.5-1% of first constant current amplitude. A pulsating voltage average value of a storage battery in the pulse charging and discharging process is fixed and controlled to be a litter lower than the gassing point. Compared with a traditional grading constant current charging method used by a high-capacity lead-acid storage battery at present, the grading constant current charging method has the advantages of being short in charging time, high in charging efficiency, small in battery gassing amount, small in battery damage and the like.

The invention discloses a magnetic adsorption mechanism and a magnetic building block applying the same. The magnetic adsorption mechanism comprises a magnetic component and a support component supporting the magnetic component, wherein the magnetic component comprises a magnet, the magnet comprises an adsorbing surface, the adsorbing surface at least comprises an S pole and an N pole, and the magnetic component can rotate relative to the support component. When the magnetic adsorption mechanisms are used in pair, different poles located on the two adsorption mechanisms produce adsorption force through rotation, and accordingly, the two adsorption mechanisms are easily adsorbed together; the distance between the adsorbing surfaces is shorter, so that the adsorbing force is larger under the condition that magnets with equal-strength magnetic force are adopted. The magnetic building block applying the magnetic adsorption mechanism comprises a main building block body, wherein a cavity is formed in the main building block body, and the magnetic adsorption mechanism is arranged in the cavity. The magnetic building block is simple in structure and simple and convenient to assemble and disassemble and the use experience is good.

The invention provides a groove-type MOS (Metal-Oxide-Semiconductor) device and a manufacturing method thereof. The groove-type MOS device at least includes a first conductive heavily doped substrate,a first conductive lightly doped epitaxial layer on the first conductive heavily doped substrate, a plurality of first conductive source regions, a plurality of grooves, a gate oxide layer and a polysilicon gate which are formed in the each groove, a second conductive lightly doped body region formed on the upper portion of the first conductive lightly doped epitaxial layer, a cellular region contact hole formed in the second conductive lightly doped body region, an insulating dielectric block covering the polysilicon gate in the groove of the cellular region, a second conductive heavily doped body contact region formed between two adjacent first conductive source regions of the cellular region, and a metal source electrode formed in the contact hole of the cellular region, wherein the plurality of first conductive source regions and the plurality of grooves are formed on the upper portion of the first conductive lightly doped epitaxial layer at intervals. The groove-type MOS device can guarantee stability of the device while improving the device density and reducing the conduction resistance.

The invention discloses a thin film transistor and an array substrate. The thin film transistor comprises a grid electrode, a grid electrode insulation layer, an active layer, a first material layer and a source/drain electrode, wherein the grid electrode insulation layer is formed on the grid electrode and covers the grid electrode; the active layer is formed on the grid electrode insulation layer; the first material layer is formed on the active layer; the source/drain electrode is formed on the first material layer; the first material layer comprises a first Ohmic contact layer, a second Ohmic contact layer and a high-impedance inclusion layer, wherein the high-impedance inclusion layer is formed between the first Ohmic contact layer and the second Ohmic contact layer; and the impedance of the high-impedance inclusion layer is greater than the impedance of the first Ohmic contact layer and the second Ohmic contact layer. The thin film transistor can effectively lower leakage current which is in the presence between the source/drain electrode and the active layer and has a simple manufacture technology.

The invention relates to the technical field of solid waste treatment, in particular to a system process method for fertilizer making through perishable garbage fermentation. The system process methodcomprises the steps: to-be-treated garbage is crushed and separated firstly, and refractory organic matter is removed; and then water is added to adjust the solid content of the garbage, slurry is prepared, and micron bubbles are introduced into the slurry. The refractory organic matter such as plastic and fabrics and imputrescible inorganic matter such as glass, ceramic, gravel and metal are removed to the greatest extent; the content of the heavy metal in garbage derived fertilizer can be effectively decreased and stably controlled, the uncertainty of the content of the heavy metal in the garbage derived fertilizer is eliminated, and convenience is provided for application of the garbage derived fertilizer; and the content of the organic matter and the content of the water in sinking and separated muddy sand materials with the large specific gravity are low, and the sinking and separated muddy sand materials with the large specific gravity meet the requirements of being subjected todirect landfill and used as raw materials of building materials.

The invention discloses a high-temperature alloy machining tool and application thereof. The tool comprises a substrate, and the substrate comprises the following chemical components of, in percentageby weight, 10 %-13 % of cobalt (Co), 0.4 %-1.3 % of chromium (Cr), 84 %-89 % of tungsten carbide (WC) and 0.2 %-1.5 % of rare metal elements. The high-temperature alloy machining tool has excellent cutting performance, strong high-temperature hardness and long service life; and the actual cutting result shows that the substrate with the above components has better performance than an existing known cutting tool for high-temperature alloy machining, and has better performance in the aspects of semi-finish machining and finish machining after being matched with a coating.