34results about How to "Will not increase the difficulty of the process" patented technology

The invention relates to the field of power semiconductor devices, in particular to an injection reinforced bipolar transistor of an insulated gate. The injection reinforced bipolar transistor comprises a p-type collector electrode, wherein a carrier diffusion layer is arranged on the p-type collector electrode. A plurality of grooves are longitudinally arranged on the carrier diffusion layer. A plurality of rows of p-type active zones and a plurality of rows of p-type non-active zones are transversely arranged on the carrier diffusion layer and form a strip-shaped p-type base region. The injection reinforced bipolar transistor is provided with strip-shaped periodic separate cell structures, emitting electrodes are correspondingly in separate shapes, accordingly holes generate the accumulative effect in the zones not covered by the emitting electrodes, further the carrier concentration of the zones close to the grooves is improved, and the on-state voltage drop is reduced.

The invention provides a high creep-resistant ultra-high molecular weight polyethylene fiber and a preparation method thereof. The preparation method is as follows: S1, mixing ultra-high molecular weight polyethylene powder, mixed solvent, antioxidant and sensitizer in a predetermined proportion, and stirring to obtain a uniform mixed suspension; S2, placing the mixed suspension in a twin-screw extruder After spinning out of the machine, the primary jelly filaments are obtained through a cooling water bath; the nascent jelly filaments are extracted with a mixed extract containing antioxidants and then dried, and then subjected to multi-stage thermal drawing and multi-stage heat drawing. graded oven to obtain the initial fiber product; S3, radiation crosslinking: the initial fiber product is subjected to a predetermined dose of irradiation treatment, and finally annealed under nitrogen conditions to obtain high creep-resistant ultra-high molecular weight polyethylene fibers. Compared with conventional ultra-high molecular weight polyethylene fibers, the fiber creep elongation of the high-creep-resistant ultra-high molecular weight polyethylene fibers prepared by the present invention is reduced by 50% or more.

The invention relates to a transistor and a transistor forming method, wherein the transistor forming method comprises the following steps that a semiconductor substrate is provided; at least two grooves are formed in the semiconductor substrate; insulation layers filling the grooves are formed in the grooves, and in addition, the tops of the insulation layers are set to be lower than the surface of the semiconductor substrate; epitaxial layers are formed on the surface and the side wall of the semiconductor substrate higher than the tops of the isolation layers, and in addition, the epitaxial layers are enabled to cover the partial isolation layers arranged at the two sides of the semiconductor substrate; a well region is formed in the semiconductor substrate and the epitaxial layers; a gate electrode structure is formed on the surface of each epitaxial layer, wherein each gate electrode structure comprises a gate dielectric layer covering the surface of the corresponding epitaxial layer and a gate conducting layer positioned on the top of the grate dielectric layer; light doping regions are formed in the epitaxial layers arranged at the two sides of the grate conducting layers; a heavy doping region is formed in each light doping region, and in addition, the heavy doping regions and the well region are isolated by the light doping regions and the isolation layers. The transistor formed by the method provided by the invention has low power consumption, the operation speed is high, the groove dimension is small, and in addition, the warping effect can be effectively eliminated.

The invention relates to a microbolometer with a high filling factor and a preparation method thereof. A metal reflective layer (2), an insulating medium layer (3) and a sacrificial layer ( 4), after the support layer (5), metal electrode layer (6), thermal sensitive layer (8), and passivation layer (9), combine chemical mechanical polishing, tungsten plunger or physical vapor deposition, chemical vapor deposition, electrochemical Deposition and other technologies prepare electrical connection structures with high aspect ratios, reduce the area of ​​electrical connection structures, and increase the fill factor of microbolometers. Infrared or terahertz detectors based on microbolometers are composed of array microbolometers with large arrays. By reducing the area of ​​contact holes, the fill factor can be effectively improved, and the performance of the detector can be improved at the same time. . Using this structure, it is possible to design and manufacture microbolometers with smaller pixels in the future to reduce the pixel size proportionally without increasing the difficulty of the process.