Injection Enhanced Insulated Gate Bipolar Transistor

A bipolar transistor, injection enhancement technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low carrier concentration, increase carrier concentration, increase process difficulty, and reduce conduction voltage drop Effect

Active Publication Date: 2017-02-01
中国东方电气集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the above-mentioned patents, the gate of CN200920192176.6 is planar, and the innovation of CN201210333321.4 lies in the back, that is, a layer of dielectric layer is introduced at the corresponding position of the terminal of the collector, while the front structure (the side of the trench gate) is still a traditional structure, so There is still the problem of low carrier concentration in the conduction process

Method used

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  • Injection Enhanced Insulated Gate Bipolar Transistor
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The injection-enhanced insulated gate bipolar transistor includes a p-type collector 101, and a carrier diffusion layer 103 is arranged on the p-type collector 101, and a plurality of grooves are vertically arranged on the carrier diffusion layer 103 202, multiple rows of p-type active regions 1041 and p-type inactive regions 1042 are arranged laterally on the carrier diffusion layer 103, and the p-type active regions 1041 and p-type inactive regions 1042 form a p-type base region in a stripe shape Each row of p-type active regions 1041 includes a plurality of independent p-type active regions 1041, which are separated by the trench 202 between the plurality of p-type active regions 1041, and each row of p-type inactive regions 1042 includes a plurality of independent A p-type inactive region 1042, a plurality of p-type inactive regions 1042 are separated by the trench 202; each p-type active region 1041 is provided with an n-type emitter 105, and the n-type emitter 105...

Embodiment 2

[0045] The injection-enhanced insulated gate bipolar transistor includes a p-type collector 101, and a carrier diffusion layer 103 is arranged on the p-type collector 101, and a plurality of grooves are vertically arranged on the carrier diffusion layer 103 202, multiple rows of p-type active regions 1041 and p-type inactive regions 1042 are arranged laterally on the carrier diffusion layer 103, and the p-type active regions 1041 and p-type inactive regions 1042 form a p-type base region in a stripe shape Each row of p-type active regions 1041 includes a plurality of independent p-type active regions 1041, which are separated by the trench 202 between the plurality of p-type active regions 1041, and each row of p-type inactive regions 1042 includes a plurality of independent A p-type inactive region 1042, a plurality of p-type inactive regions 1042 are separated by the trench 202; each p-type active region 1041 is provided with an n-type emitter 105, and the n-type emitter 105...

Embodiment 3

[0051] The injection-enhanced insulated gate bipolar transistor includes a p-type collector 101, and a carrier diffusion layer 103 is arranged on the p-type collector 101, and a plurality of grooves are vertically arranged on the carrier diffusion layer 103 202, multiple rows of p-type active regions 1041 and p-type inactive regions 1042 are arranged laterally on the carrier diffusion layer 103, and the p-type active regions 1041 and p-type inactive regions 1042 form a p-type base region in a stripe shape Each row of p-type active regions 1041 includes a plurality of independent p-type active regions 1041, which are separated by the trench 202 between the plurality of p-type active regions 1041, and each row of p-type inactive regions 1042 includes a plurality of independent A p-type inactive region 1042, a plurality of p-type inactive regions 1042 are separated by the trench 202; each p-type active region 1041 is provided with an n-type emitter 105, and the n-type emitter 105...

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Abstract

The invention relates to the field of power semiconductor devices, in particular to an injection reinforced bipolar transistor of an insulated gate. The injection reinforced bipolar transistor comprises a p-type collector electrode, wherein a carrier diffusion layer is arranged on the p-type collector electrode. A plurality of grooves are longitudinally arranged on the carrier diffusion layer. A plurality of rows of p-type active zones and a plurality of rows of p-type non-active zones are transversely arranged on the carrier diffusion layer and form a strip-shaped p-type base region. The injection reinforced bipolar transistor is provided with strip-shaped periodic separate cell structures, emitting electrodes are correspondingly in separate shapes, accordingly holes generate the accumulative effect in the zones not covered by the emitting electrodes, further the carrier concentration of the zones close to the grooves is improved, and the on-state voltage drop is reduced.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, and mainly relates to an injection-enhanced insulated gate bipolar transistor. Background technique [0002] Insulated gate bipolar transistors are widely used in the core control field of the power electronics industry. Trench gate is one of the core technologies of this type of product. Its main purpose can achieve greater current density and smaller conduction voltage drop, thereby Reduce device size and reduce power consumption. When the traditional insulated gate bipolar transistor is manufactured with a front structure (trench gate side), it usually adopts the method of full coverage of the cell area, which will cause the holes to quickly overflow the emitter when the device is in operation, reducing the area near the trench. The carrier concentration is low, so that the reduction of the conduction voltage drop is limited. [0003] The bipolar transistor structure has also been ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/08H01L29/423
CPCH01L29/0603H01L29/0696H01L29/08H01L29/41708H01L29/7393
Inventor 胡强王思亮张世勇
Owner 中国东方电气集团有限公司
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