2results about How to "Enhanced conductance modulation effect" patented technology

The present application belongs to the technical field of power semiconductor devices, and relates to a self-bias split gate bipolar transistor and a manufacturing method thereof. The present application provides a bias potential for the split gate (11) through the potential of the floating P region (18), thereby forming the electron accumulation ability below the trench, enhancing the conductance modulation ability, and thus enhancing the forward conduction ability of the device. Compared with the traditional split gate structure, the diode and capacitor structure of the self-bias structure are integrated into the IGBT structure, which can simultaneously improve the conduction ability and switching performance of the device without affecting the device size and IGBT operation, eliminates the negative effects brought by the split gate, improves the switching loss and enhances the switching speed, optimizes the forward conduction ability of the device, and improves the compromise characteristics between the forward conduction voltage drop and the off-state loss of the device.

The application provides a semiconductor device, relates to the technical field of semiconductor, and aims to solve the problem of increased on-resistance caused by bipolar degradation of a semiconductor device in the prior art.The semiconductor device comprises a polycrystalline silicon carbide substrate with P-type conductivity, a drift layer with N-type conductivity, and a collector metal layer, the drift layer is arranged above the polycrystalline silicon carbide substrate, and the drift layer is internally provided with a P column and an N region which are adjacent in the lateral direction; the collector metal layer is directly laminated on the other side of the polycrystalline silicon carbide substrate which is away from the drift layer and forms an ohmic contact with the polycrystalline silicon carbide substrate. The polycrystalline silicon carbide substrate can inject a higher concentration of minority carriers into the drift layer, so as to improve the conductance modulation efficiency and reduce the resistance; meanwhile, the polycrystalline silicon carbide substrate makes the recombination process of electrons and holes in the drift layer more uniform, and energy is not released at a certain point, thereby reducing the serious bipolar degradation phenomenon caused by local defect aggregation.