43results about How to "Reduce saturation pressure drop" patented technology

The invention discloses a Schottky barrier high-current-density IGBT device comprising a P type base region, a poly silicon gate region, a N- type doped drift region in contact with the bottom surface of the P-type base region, a first device in contact with the bottom surface of the N- type doped drift region, a Schottky barrier region, a N+ type doped source region, an emitter metallic region, and a gate oxide layer. The Schottky barrier region and the N+ type doped source region are in contact with the top surface of the P type base region. The emitter metallic region is in contact with the Schottky barrier region and the N+ type doped source region. The emitter metallic region is arranged between the poly silicon gate region and a group including the N- type doped drift region, the P type base region, the N+ type doped source region, and the emitter metallic region. While advantages of high operating voltage, simple gate voltage control, good switching controllability, a safe operating area, and simple short circuit protection measures are maintained, the Schottky barrier high-current-density IGBT device is greatly increased in current density, improved in conductivity modulation effect and current conduction capability, and decreased in on-state loss.

The invention provides an insulated gate bipolar transistor and a manufacturing method thereof. The manufacturing method of the insulated gate bipolar transistor includes: providing a substrate, the substrate having a cell region and a dummy cell region; forming A gate structure is in the substrate, and the gate structure separates the cell region from the dummy cell region; and, high-energy ion implantation is used to form a well region in the substrate of the dummy cell region , so that a PN junction is formed between the well region and the substrate, and the top surface of the well region is lower than the top surface of the substrate and not lower than the bottom surface of the gate structure. The technical scheme of the invention can accurately control the junction depth of the PN junction in the virtual cell area, thereby improving the withstand voltage of the device, reducing the saturation voltage drop of the device, and improving the stability and uniformity of the threshold voltage.

The invention relates to an IGBT device with a carrier storage structure and a manufacturing method thereof. An active area of the IGBT device adopts a groove structure; a second conduction type body area is arranged in a first conduction type drifting area of the active area; a cellular groove is located in the second conduction type body area and deeply extends into the first conduction type drifting area below the second conduction type body area; the carrier storage structure is arranged in the first conduction type drifting area of the active area; the carrier storage structure comprises a first conduction type carrier storage area which is used for completely surrounding the inner and outer walls, extending in the first conduction type drifting area, of the cellular groove; and the doping concentration of the first conduction type carrier storage area is greater than the doping concentration of the first conduction type drifting area. According to the IGBT device with the carrier storage structure and the manufacturing method thereof, the relatively low breakover voltage drop and extremely rapid turnoff characteristic can be satisfied at the same time, the pressurization breakdown position can be adjusted to a cellular area to ensure relatively high voltage surge resistance, the chip manufacturing cost is not increased, and the chip area is reduced.