IGBT having super junction structure and preparation method thereof
A gate trench and collector technology, applied in the field of IGBT, can solve problems such as large saturation voltage drop, and achieve the effects of reducing saturation voltage drop, increasing breakdown voltage, and shortening processing time
Active Publication Date: 2015-07-15
SHANGHAI TUNA ELECTRIC MECHANIC EQUIP CO LTD
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The present invention discloses an IGBT having with a super junction structure. The IGBT having the super junction structure comprises a collector, a drift region, a P-type base region and an N-type emitter region, wherein, gate grooves are formed in the P-type base region and the N-type emitter region, gate electrodes being arranged in the gate grooves; P-type regions are formed between the bottom of the gate grooves and the collector; the P-type regions are respectively connected with the bottom of the gate grooves and the collector; and spaces between the adjacent P-type regions are filled with an insulating medium. The present invention further discloses a preparation method of the IGBT having the super junction structure. The IGBT having the super junction structure provided by the present invention can generate a transverse electric field so as to improve the breakdown voltage and reduce the saturation voltage drop of a device. The preparation method provided by the present invention has the advantage of short processing time.
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