IGBT having super junction structure and preparation method thereof
A gate trench and collector technology, applied in the field of IGBT, can solve problems such as large saturation voltage drop, and achieve the effects of reducing saturation voltage drop, increasing breakdown voltage, and shortening processing time
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[0029] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0030] Such as figure 1 As shown, an IGBT with a super junction structure includes a collector 1, a drift region 2, a P-type base region 3, and an N-type emitter region 4. The P-type base A gate trench 5 is provided in the region 3 and the N-type emitter region 4, a gate electrode 6 is provided in the gate trench 5, and a P-type is provided between the bottom of the gate trench 5 and the collector 1 Area 7, the P-type area 7 is respecti...
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