The invention discloses a trench insulated gate bipolar transistor and a preparation method therefor. The trench insulated gate bipolar transistor (IGBT) comprises an N- type base region, a P type base region, an N+ buffer layer, a back P+ emitter region, an N+ collector region, a gate oxide layer, a polycrystal gate, a collector electrode, an emitting electrode, a gate electrode, a P+ type base region, a carrier storage layer, and a P- type floating layer, wherein the N- type base region, the N+ buffer layer, the back P+ emitter region and the collector electrode are arranged from the upper to lower in sequence; a groove body is formed around the upper part of the N- type base region; and the P- type floating layer is arranged in the groove body. According to the trench insulated gate bipolar transistor and the preparation method therefor provided by the invention, the carrier storage layer is introduced to the conventional trench IGBT structure, so that the electron diffusion can be improved, current centralization can be avoided, and electric conductance modulation can be reinforced; and meanwhile, the P- type floating layer is additionally arranged at the lower end of the trench gate, so that a voltage-division effect is achieved, and the withstand voltage of the device is improved.