The invention provides a novel RC-IGBT structure with a hole circulation path and a good compromise relationship, which comprises a device main body, collector
metal is arranged at the bottom of the device main body, a p + collector region, an FS layer, an n-drift region, a groove with a grid
electrode at the top, an n + emitter region, a p +
contact region and a p base region are sequentially arranged upwards, a second CS storage layer is arranged at the bottom, and the emitter
composite structure on the two sides comprises a deep p-type region, a deeper p-type region, a hole channel and a CS storage layer. Through the above structure, the deep p-type region and the deeper p-type region optimize the
electric field distribution, improve the
doping concentration of the CS layer, enhance the hole accumulation effect, reduce the conduction
voltage drop, accelerate the carrier export during the turn-off of a hole channel, and shorten the turn-
off time, and at the same time, under the short-circuit working condition, the structures cooperatively export holes, weaken the
conductivity modulation effect, improve the short-circuit endurance capability, and improve the performance of the device. And finally, good balance of
voltage resistance, conduction
voltage drop and switching speed is realized, and the comprehensive performance of the device is remarkably improved.