A gate drive circuit adapted to high
junction temperature environments, and its turn-on and turn-off methods, are disclosed. The gate drive circuit includes a main three-terminal
transistor, a turn-off circuit, and an
auxiliary circuit. The added
auxiliary circuit generates an auxiliary current
signal, either in the same direction or opposite to the
control signal current, to the control
electrode of the main three-terminal
transistor during the turn-on and turn-off processes within a preset time period. This disclosure enables the generation of corresponding positive or negative auxiliary current signals at the control
electrode of the three-terminal
transistor. During the conduction process, the
auxiliary circuit can generate a reverse auxiliary current
signal at the control
electrode of the three-terminal transistor during the current rise phase, reducing the drive current of the turn-on
signal to decrease di. d / dt, suppressing the turn-on current; during the turn-off process, the auxiliary circuit can generate a unidirectional auxiliary current signal at the control electrode of the three-terminal transistor in the current-decreasing segment, increasing the drive current of the turn-off signal and accelerating the turn-off speed.