16results about How to "Shorten off time" patented technology

The invention discloses a transient field through-casing resistivity logging system transmitting circuit: comprising a DSP core board, a magnetic coupling isolation circuit, an intelligent power module, a transmitting antenna, a power absorption circuit and a transmitting current acquisition circuit, a DC / DC power supply circuit supplies power to the transmitting circuit, and the intelligent power module comprises a driving circuit, a power amplifier circuit, a protection circuit and a monitoring circuit; the DSP core board generates two PWM square wave signals, which pass through the magnetic coupling isolation circuit and then through the driving circuit to realize the switch control of the MOSFET power amplifier tube of the power amplifier circuit, and the power amplifier circuit is converted into an AC excitation for the transmitting antenna according to the control logic of the driving circuit. The transient field through-casing transmitting circuit abandons the traditional complex transmitting circuit form and adopts an integrated intelligent power module as a bridge power conversion circuit, which integrates the transmitting driving circuit, the power amplifier circuit, the overcurrent, overvoltage, undervoltage and overheating protection circuits, and is simple and easy to control.

This invention discloses an automatic switching system, method, and drive circuit for an uninterruptible power supply (UPS) in the field of power electronics. It includes a power module for providing electrical energy to the system; a relay switch unit for controlling the switching of mains power input; an accelerated turn-off unit for accelerating the turn-off of the relay switch unit; a circuit switching unit for switching a high-current drive circuit to a low-current drive circuit after a predetermined delay; and a control module for outputting a high-level signal to control the circuit switching unit to switch the high-current drive circuit to accelerate the closing of the relay switch unit, and outputting a low-level signal to control the accelerated turn-off unit to accelerate the turn-off of the relay switch unit. This invention employs a delayed switching drive design and an accelerated turn-off unit, which significantly simplifies the power supply hardware design, reduces the power requirements of the auxiliary power module, and significantly shortens the relay turn-off time, ensuring the stability and reliability of the UPS during the switching process.

The invention discloses a GaN power tube-based low-voltage input high-power isolated power supply, which comprises a first-stage circuit and a second-stage circuit, the first-stage circuit and the second-stage circuit both adopt a GaN power tube as a main power switch in a circuit, the first-stage circuit and the second-stage circuit are connected in series, and the input end of the first-stage circuit is used as the input end of the high-power isolated power supply; the output end of the second-stage circuit is used as the output end of the high-power isolation power supply; the first-stage circuit is used for boosting an input low-voltage direct-current voltage through an interleaved parallel BOOST circuit to obtain a boosted voltage; and the second-stage circuit is used for converting the boosted voltage into a voltage required by a load by adopting an asymmetric half-bridge flyback AHB topology and then outputting the voltage, and isolating the input boosted voltage from the output voltage required by the load through a power transformer. The switching power supply provided by the invention can meet the requirements of low-voltage input, high-power output, input and output voltage isolation, high efficiency, low temperature rise and high integration.

The invention discloses a power grid uninterruptible power supply automatic switching system and method and a driving circuit, and belongs to the technical field of power electronics, and the system comprises a power supply module which is used for providing electric energy for the system; the relay switch unit is used for controlling the on-off of commercial power input; the acceleration turn-off unit is used for accelerating turn-off of the relay switch unit; the circuit switching unit is used for switching the large-current driving loop into a small-current driving loop after a preset time is delayed; and the control module is used for outputting a high-level signal to control the circuit switching unit to switch the large-current driving loop to accelerate the closing of the relay switch unit, and outputting a low-level signal to control the acceleration turn-off unit to accelerate the turn-off of the relay switch unit. The delay switching driving design and the acceleration turn-off unit are adopted, the power supply hardware design can be greatly simplified, the power requirement of the auxiliary power supply module is reduced, meanwhile, the turn-off time of the relay is remarkably shortened, and the stability and reliability of the power grid uninterruptible power supply in the switching process are ensured.

The invention relates to an insulated gate bipolar transistor with a trench gate structure and a preparation method of the insulated gate bipolar transistor, and the transistor comprises a substrate, a nucleating layer, a stress adjusting layer, a collector region, an N-type buffer layer, an N-type drift layer, a P-type emitter region, a channel layer and a barrier layer which are sequentially stacked, two-dimensional electron gas is formed between the channel layer and the barrier layer; the first emitter metal is in contact with the P-type emitter region, and a dielectric layer is arranged between the first emitter metal and the barrier layer and between the first emitter metal and the channel layer; the second emitter metal covers the first emitter metal and is in contact with the upper surface of the channel layer; the gate metal extends into the N-type drift layer, and a dielectric layer is arranged between the gate metal and the barrier layer, the channel layer, the P-type emitter region and the N-type drift layer; and the collector metal penetrates through the substrate, the nucleating layer and the stress adjusting layer and extends to the lower surface of the collector region. According to the transistor, the scattering effect is reduced, and the mobility of device electrons is improved.

The invention discloses a high-start low-maintenance electromagnetic valve control system which is characterized in that an upper computer outputs a control signal to a high-start low-maintenance control box, the high-start low-maintenance control box outputs to open electromagnetic valves, and three paths of identical control systems are arranged in the high-start low-maintenance control box and can control three groups of electromagnetic valves to act; the control system comprises a bipolar power supply, a Hall sensor, a solid-state relay, an aviation plug, a release loop, a slide rail connector bar and a diode; the bipolar power supply supplies power to the Hall sensor, high and low voltage anodes are connected with output anodes of the two solid-state relays through the sliding rail connector bar, output cathodes of the solid-state relays are connected with anodes of the diodes, and cathodes of the diodes are connected to input anodes of the Hall sensor. According to the invention, the working efficiency and the control precision of the electromagnetic valve in the hot test run test process are improved, and the release loop is connected in parallel to the output of the electromagnetic valve and the input positive electrode of the Hall sensor.

The invention provides a novel RC-IGBT structure with a hole circulation path and a good compromise relationship, which comprises a device main body, collector metal is arranged at the bottom of the device main body, a p + collector region, an FS layer, an n-drift region, a groove with a grid electrode at the top, an n + emitter region, a p + contact region and a p base region are sequentially arranged upwards, a second CS storage layer is arranged at the bottom, and the emitter composite structure on the two sides comprises a deep p-type region, a deeper p-type region, a hole channel and a CS storage layer. Through the above structure, the deep p-type region and the deeper p-type region optimize the electric field distribution, improve the doping concentration of the CS layer, enhance the hole accumulation effect, reduce the conduction voltage drop, accelerate the carrier export during the turn-off of a hole channel, and shorten the turn-off time, and at the same time, under the short-circuit working condition, the structures cooperatively export holes, weaken the conductivity modulation effect, improve the short-circuit endurance capability, and improve the performance of the device. And finally, good balance of voltage resistance, conduction voltage drop and switching speed is realized, and the comprehensive performance of the device is remarkably improved.

A gate drive circuit adapted to high junction temperature environments, and its turn-on and turn-off methods, are disclosed. The gate drive circuit includes a main three-terminal transistor, a turn-off circuit, and an auxiliary circuit. The added auxiliary circuit generates an auxiliary current signal, either in the same direction or opposite to the control signal current, to the control electrode of the main three-terminal transistor during the turn-on and turn-off processes within a preset time period. This disclosure enables the generation of corresponding positive or negative auxiliary current signals at the control electrode of the three-terminal transistor. During the conduction process, the auxiliary circuit can generate a reverse auxiliary current signal at the control electrode of the three-terminal transistor during the current rise phase, reducing the drive current of the turn-on signal to decrease di. d / dt, suppressing the turn-on current; during the turn-off process, the auxiliary circuit can generate a unidirectional auxiliary current signal at the control electrode of the three-terminal transistor in the current-decreasing segment, increasing the drive current of the turn-off signal and accelerating the turn-off speed.

This application relates to the technical field of circuit transformers, and in particular to a BUCK circuit based on the UC3843, comprising: a control module for receiving a transformer signal and generating a switch on / off signal based on the transformer signal; a drive module connected to the control module to receive the switch on / off signal and isolate and transmit the switch on / off signal to generate an isolation on / off signal; and a voltage adjustment module for receiving the isolation on / off signal and adjusting the voltage output according to the isolation on / off signal. This application converts a higher DC input voltage to a lower DC output voltage. The circuit achieves the same function as a transformer through a step-down method, reducing costs and improving space utilization.

The utility model discloses a semiconductor device, power electronic equipment and a vehicle, and the semiconductor device comprises a substrate of a first conductive type; the collector electrode structure is positioned on the back surface of the substrate; the collector structure comprises a second conductive type heavily-doped first collector region and a second conductive type heavily-doped second collector region, the first conductive type heavily doped second collector region is positioned on the side surface of the first collector region along a first direction parallel to the substrate; the third collector region is located on the side face of the first collector region in the first direction and located on the side, close to the substrate, of the second collector region. The device provided by the utility model realizes rapid extraction of electrons when the device is turned off reversely, inhibits minority carrier injection of a collector, shortens turn-off time, and reduces turn-off loss.

The utility model is suitable for the technical field of power supply equipment, and provides an inductive load power supply circuit and power supply equipment, and the inductive load power supply circuit comprises a follow current switch module, a demagnetizing load module, a follow current module and a demagnetizing module. The first end of the follow current switch module is electrically connected with the first end of the demagnetizing load module, the first end of the power module and the first end of the inductive load, the first end of the follow current module is electrically connected with the second end of the follow current switch module, and the first end of the demagnetizing module is electrically connected with the second end of the demagnetizing load module. The second end of the follow current module is electrically connected with the second end of the demagnetization module, the second end of the power supply module and the second end of the inductive load. According to the inductive load power supply circuit provided by the embodiment of the invention, the inductive load can be demagnetized through the internal resistance of the inductive load and the target demagnetizing resistor in the turn-off process of the inductive load, so that the turn-off time of the inductive load is shortened, and the working efficiency of power supply equipment is improved.

The utility model relates to an output switching tube driving circuit, which comprises a first triode, a second triode and a switching tube, and is characterized in that the emitter of the first triode is connected with a third resistor, and the base of the first triode is connected with a common diode, a first resistor, a voltage stabilizing diode and the switching tube; the collector of the first triode and the collector of the second triode are connected with a second resistor. The emitter of the second triode is also connected to the second resistor, and the base of the second triode is connected with the field switching tube; the second resistor is connected with the first power input end. Compared with a traditional switch tube driving circuit, the switch tube driving circuit provided by the embodiment has the advantages of being high in load capacity and capable of meeting the high-power requirement.

The present invention is configured so that a user can adjust injection attributes including drug injection mode, injection amount, injection depth, and injection speed, and thus has the advantage that convenience of use can be further improved. In addition, the user can set desired injection attributes through a user interface, and thus convenience can be improved. Moreover, a number of outputs, a period, an amplitude, an output time, and an output off time of a pulse applied to a solenoid coil can be adjusted to adjust the injection attributes of a drug to those desired by the user.

The invention provides a trench gate IGBT (Insulated Gate Bipolar Translator) structure and a semiconductor device, and the trench gate IGBT structure comprises a first trench gate which extends from the surface of a substrate to an N-drift region; the first P-type doped region and the P-type base region are respectively arranged in the N-drift region at one side of the first trench gate, and a plug is arranged in the first P-type doped region and is used for grounding; the second trench gate is arranged in the first P-type doped region and is electrically connected with the first trench gate, and the length of the second trench gate is smaller than that of the first trench gate; and the N-type floating buried layer is arranged in the first P-type doped region below the second trench gate, and one end of the N-type floating buried layer and the first trench gate are arranged at an interval. According to the trench gate IGBT structure, the conduction voltage drop and the turn-off loss of the trench gate IGBT structure can be optimized at the same time.

The present invention provides a trench gate IGBT structure and a semiconductor device, wherein the trench gate IGBT structure comprises: a first trench gate extending from the substrate surface to the N-drift region; a first P-type doped region, the P-type base region and the N-drift region each arranged on one side of the first trench gate, wherein a plug is arranged in the first P-type doped region for grounding; a second trench gate arranged in the first P-type doped region, electrically connected to the first trench gate, and the length of the second trench gate is less than the length of the first trench gate; an N-type floating buried layer arranged in the first P-type doped region below the second trench gate, wherein one end of the N-type floating buried layer is spaced apart from the first trench gate. The present invention can simultaneously optimize the on-state voltage drop and off-state loss of the trench gate IGBT structure.

The present application provides a dead time control circuit, a control method and a power supply, wherein the dead time control circuit comprises a first signal detection branch, a second signal detection branch and a control module; the first signal detection branch is used to obtain a first voltage signal of a first node within the dead time; the second signal detection branch is used to obtain a second voltage signal of a control electrode of a second power switch tube within the dead time; the control module is used to output a control signal for controlling the turn-off time of the second power switch tube according to a time difference between a first rising edge of the first voltage signal and a second rising edge of the second voltage signal; if the time difference is greater than a preset value of the dead time, the turn-off time of the second power switch tube is reduced, and if the time difference is less than the preset value of the dead time, the turn-off time of the second power switch tube is increased; the dead time is adjusted by controlling the turn-off time of the second power switch tube to improve the control accuracy of the dead time, thereby facilitating improving the stability of the power supply output.