137results about How to "Shorten off time" patented technology

The invention discloses a reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with a P floating layer current bolt, and belongs to the field of semiconductor power elements. A medium buried layer is led in between an N collector region and a P collector region of a traditional RC-IGBT, and the P floating layer current bolt is led into an N-type buffering layer above the medium buried layer. According to the RC-IGBT with the P floating layer current bolt, other parameters of an element are not affected, break-over voltage of a snapback is obviously lowered, a reverse recovery soft factor is improved, current is distributed uniformly, local over-heating phenomenon is avoided, and the reliability of the RC-IGBT is improved.

The invention relates to a driving circuit of a triode. The circuit comprises a current supply device, a first switch device, a second switch device, a switch control device, an inductor, a direct-current power supply and a current detection unit, wherein the current supply device is grounded after being sequentially connected with the first switch device and the second switch device; the triode is connected between the first switch device and the second switch device, the direct-current power supply is connected with the collecting electrode of the triode, and an emitting electrode of the triode is grounded; the switch control device receives a detection voltage provided by the current detection unit and an externally supplied control voltage to control the on-off states of the first switch device and the second switch device so as to control the on-off state of the triode; and the current supply device supplies a direct current which reflects the changing of the current of the collecting electrode to the base electrode of the triode. By utilizing the driving circuit of the triode, the turn-off time of the switch is shortened, and the power dissipation is reduced; and meanwhile, the invention discloses a driving method of the driving circuit of the triode and a switch power supply.

An anode-short tunnel pump IGBT belongs to the technical field of semiconductor power devices. With an anode-short structure and a tunnel pump structure simultaneously introduced into a traditional IGBT, or a tunnel pump structure into an anode-short IGBT, or an anode-short structure into a tunnel pump IGBT, the invention gives the advantages of both the anode-short IGBT and the tunnel pump IGBT to the anode-short tunnel pump IGBT so as to improve the turn-off characteristic of the device and lower the conductive voltage drop of the device. The invention can better reconcile the positive saturation voltage drop with the turn-off time, and optimize the conductive characteristic of the device, so that the invention is suitable in particular for application environments characterized by high voltage, heavy current and high frequency.

The invention discloses a high-speed large-current power field-effect transistor driving circuit, which comprises a driving pre-circuit, a totem-pole circuit, and a driving post-circuit, wherein the driving pre-circuit comprises a capacitor C1, resistors R1, R2 and R3, a diode D1 and triodes T1 and T2; the totem-pole circuit consists of diodes D2 and D3, resistors R4 to R11, a capacitor C2 and field-effect transistors Q1 and Q2; the driving post-circuit consists of resistors R12 and R13, diodes D4 and D5, a capacitor C3 and a field-effect transistor Q3; the driving pre-circuit is connected with a driving signal Vg, the driving post-circuit is connected with a driving object Q3, and the totem-pole circuit is connected with the driving pre-circuit and the driving post-circuit. The driving circuit is simple in structure, low in cost, large in output current and high in load-carrying capacity, and can meet the requirement on the high-speed low-voltage large-current driving on the field-effect transistors under specific situations.

The invention discloses a short-circuit shutoff method for an insulated gate bipolar transistor (IGBT) of a high-power current transformer, which is applied in the fields of wind power current transformers and current transformers for ships and the like. The shutoff method for a bypass switch of the conventional short-circuit soft shutoff technique is improved, a detection circuit in a gate voltage discharge process is increased for detecting the gate voltage during discharging, and the bypass switch is actuated to enter the soft shutoff process after the preliminary discharge process of the gate voltage is finished. The method overcomes the defect of long shutoff time delay of the conventional soft shutoff technique, reduces the delay time of the conventional short-circuit soft shutoff during discharging, shortens the operating time of the soft shutoff operation, and increases the survival rate of the IGBT in the short-circuit process.

The invention discloses a resonant gate driving circuit suitable for a high-frequency application. The resonant gate driving circuit comprises a resonant capacitor Cr, a resonant inductor Lr, an auxiliary switching tube 1, an auxiliary switching tube 2, a main switching tube 1, a main switching tube 2 and a main power device Q1. The resonant capacitor Cr is connected in series with the resonant inductor Lr, the resonant inductor Lr is connected to a source electrode of the auxiliary switching tube 1, a drain electrode of the auxiliary switching tube 1 is connected to a drain electrode of the auxiliary switching tube 2, a source electrode of the auxiliary switching tube 2 is connected to a source electrode of the main switching tube 1, a drain electrode of the main switching tube 2 and a gate of the main power device Q1, a drain electrode of the main switching tube 1 is connected to a positive power supply voltage VCC, and a source electrode of the main switching tube 2 is connected tonegative power supply voltage VEE. According to the driving circuit of the invention, the resonant capacitor Cr, the resonant inductor Lr and the four switching tubes S1, S2, S3 and S4 are used to achieve gate resonant driving, the driving circuit can recover gate driving power, the driving circuit loss is reduced, and the switch-on and switch-off times of the main power device are shortened.

The invention discloses a shifting register, a grid driving circuit, an array substrate and a display device. The shifting register comprises an input module and an output module and further comprises a grid signal generating module which is connected with the input module and the output module, wherein the input module comprises a first clock signal input end, a second clock signal input end, a third clock signal input end and a fourth clock signal input end, signals the same in phase and amplitude are input in the third clock signal input end and the second clock signal input end, and direct-current voltage signals are input in the fourth clock signal input end; the shifting register furthermore comprises a control module connected with the grid signal generating module, the control module comprises a seventh thin film transistor, a second capacitor and an eleventh thin film transistor, the third clock signal input end is connected with a grid of the seventh thin film transistor and a first end of the second capacitor, the fourth clock signal input end is connected with a source electrode of the eleventh thin film transistor, and the level of the point is a first level. Two sequence signals are added, in this way, discharging at the output ends is accelerated, and turn-off time of grid signals is shortened.

The invention discloses an insulated gate bipolar translator (IGBT) device with two short-circuit positive electrodes, and belongs to the technical field of semiconductor power devices. A positive electrode structure of the device is a two-positive-electrode short-circuit structure. The IGBT device comprises a first P+ hole emission layer, a second P+ hole emission layer, a metal collector and a silicon dioxide barrier layer, wherein the silicon dioxide barrier layer is positioned on the back face of the first P+ hole emission layer; the metal collector is positioned on the side face of the first P+ hole emission layer and below the second P+ hole emission layer, and the two P+ hole emission layers are contacted with each other; the second P+ hole emission layer is positioned at the bottom of an N- drift region and staggered in parallel with the first P+ hole emission layer; and an electronic trench is formed between the first P+ hole emission layer and the second P+ hole emission layer. The positive electrode structure of the IGBT device is improved, so that the hole injection efficiency is improved, the current carrier concentration distribution in the drift region is optimized, the conductivity modulation performance in the device body is improved, a negative differential resistance (NDR) region is eliminated effectively, the cut-off loss of the IGBT device is reduced effectively, and finally, compromise optimization for conductivity pressure drop and cut-off loss is realized.

The invention discloses a control device and method for a power factor correction converter. The control device comprises a PID control unit, an off-time adjustment unit, an on-time adjustment unit and a switching frequency control unit, wherein the PID control unit is used for outputting a control signal Vm based on an output voltage of the power factor correction converter, the off-time adjustment unit is used for outputting an off-time adjustment signal of a power switch tube of the power factor correction converter based on the PID control signal Vm, the on-time adjustment unit is used foroutputting an on-time adjustment signal based on an input voltage Vin of the power factor correction converter, the control signal Vm and a power switch tube current sampling signal, and the switching frequency control unit is used for adjusting the switching frequency of the power switch tube based on the off-time adjustment signal and the on-time adjustment signal.

The invention relates to the technical field of transient electromagnetic underground detection, in particular to a novel array type transient electromagnetic detection system and a detection method.The system comprises a transmitting circuit, a receiving circuit and an industrial computer; the transmitting circuit comprises four transmitting coils arranged in an array, four transmitting coils equally distributing flow directions and a current sharing controller which ensures the same current waveform and amplitude of the four transmitting coils; the receiving circuit includes a receiving coil which is placed on a geometric center of a transmitting coil array and receives a secondary field generated by an excitation magnetic field of the four array type transmitting coils; the industrialcomputer is used for controlling the emission current of the transmitting circuit and controlling the transmitting circuit to evenly distribute the current flowing to the four transmitting coils according to the collected emission current to ensure that the current waveform and the amplitude are consistent. An array type emission method effectively solves the contradiction between the excitation depth and the coil diameter, utilizes the superposition of a plurality of small coils to provide a stronger and more uniform excitation primary field, and is beneficial to improving the quality of a detection signal.

The invention relates to an SA-LIGBT device with a grid-controlled collector, and belongs to the field of electronic devices. The device comprises a transmitter, a grid, an N-type drift area and a grid-controlled collector area from the left to right. The grid-controlled collector area comprises an N-buffer I buffer layer, a P-collector, an N-buffer II buffer layer, a P-type electron barrier layerP-base and an N-collector from the left to right. A transverse grooved grid is arranged under the P-type electron barrier layer P-base and the N-collector. When in forward conduction, the P-type electron barrier layer P-base can stop electrons from flowing to the N-collector, and the short-circuit resistance of the collector is increased. Through adjusting the length and concentration of the P-type electron barrier layer P-base, the short-circuit resistance of the collector can be adjusted, and the snapback effect can be eliminated. When being turned off, the P-type electron barrier layer canbe transformed to the N-type under the grid-controlled voltage, the electron channel is formed, the carrier extraction efficiency is improved, and thus the off time of the device is effectively reduced.

A fast turn-off silicon-on-insulator lateral insulated gate bipolar transistor device, the semiconductor has: a buried oxygen on a P-type substrate, an N-type drift region on the buried layer, a P-type well region and a N-type buffer area, in the N-type buffer area, there is a heavily doped P-type collector region, in the P-type well region, there are heavily doped P-type emitter regions and N-type emitter regions, in the P-type well region There is a gate oxide layer on the surface, and a polysilicon layer on it. In the heavily doped P-type emitter region, there is a first vertical groove that is as deep as the buried oxygen. A lateral trench extending to the drift region, a second vertical trench is provided in the heavily doped P-type collector region and its depth is as deep as buried oxygen, and the above-mentioned trench partially expands inward to form second transverse trenches with equal spacing The groove extends to the drift region, and all the above grooves are filled with polysilicon wrapped with a pressure-resistant medium, and the filler located in the drift region is a pressure-resistant medium.