Tunnel IGBT with anode in short circuit

An anode short-circuit and tunneling technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the rise of conduction voltage drop, and achieve the effects of low conduction voltage drop, excellent turn-off characteristics, and excellent conduction characteristics

Inactive Publication Date: 2009-03-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the tunnel pump structure can only increase the switching speed to a certain extent, and at the expense of the forward voltage drop during conduction, that is, its conduction voltage drop has a certain increase compared with ordinary IGBTs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tunnel IGBT with anode in short circuit
  • Tunnel IGBT with anode in short circuit
  • Tunnel IGBT with anode in short circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The anode-short-circuited tunnel pump IGBT of the present invention can greatly optimize the contradictory relationship between forward saturation voltage drop and turn-off time.

[0024] A tunnel-pumped IGBT with an anode short-circuit, such as Figure 4 As shown, including gate 1, isolation dielectric 2, emitter 3, N + Source region 4, P-type base region 5, N - Drift region 6 and collector electrode 11. It is characterized in that it also includes an anode short circuit structure layer and a tunnel pump structure layer. The anode short circuit structure layer consists of a P + District 9 and First N + Zones 10 are formed side by side in the lateral direction; the tunnel pump structure layer is composed of the second N + Zone 8 and surrounding the second N +The P-type region 7 of the region 8 is formed; the anode short-circuit structure layer is located between the collector electrode 11 and the tunnel pump structure layer, and the tunnel pump structure layer is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An anode-short tunnel pump IGBT belongs to the technical field of semiconductor power devices. With an anode-short structure and a tunnel pump structure simultaneously introduced into a traditional IGBT, or a tunnel pump structure into an anode-short IGBT, or an anode-short structure into a tunnel pump IGBT, the invention gives the advantages of both the anode-short IGBT and the tunnel pump IGBT to the anode-short tunnel pump IGBT so as to improve the turn-off characteristic of the device and lower the conductive voltage drop of the device. The invention can better reconcile the positive saturation voltage drop with the turn-off time, and optimize the conductive characteristic of the device, so that the invention is suitable in particular for application environments characterized by high voltage, heavy current and high frequency.

Description

technical field [0001] The invention relates to a tunnel pump IGBT with an anode short-circuit, which belongs to the technical field of semiconductor power devices. Background technique [0002] For low-voltage applications, power MOS can obtain ideal specific on-resistance characteristics and ideal switching characteristics at the same time. But for the medium and high voltage application environment, the specific on-resistance of the power MOS will increase faster with the increase of the withstand voltage. The IGBT is a fully-controlled voltage-driven power semiconductor switching device composed of BJT and MOSFET. It has the advantages of high input impedance of power MOS and low conduction voltage drop of GTR, aiming to solve the problem of power MOS. Difficult high-voltage applications due to the contradictory relationship between on-resistance and withstand voltage. IGBT is suitable for making medium to high power application devices and is an important foundation o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06
Inventor 李泽宏谢刚廖忠平马俊张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap