Gallium oxide field effect transistor and preparation method thereof

Abstract

The invention is applicable to the technical field of semiconductor manufacturing, and provides a gallium oxide field effect transistor and a preparation method thereof. The preparation method comprises the steps: an n-type doped gallium oxide channel layer is prepared on a substrate in an epitaxial mode, and a source and a drain are deposited on the n-type doped gallium oxide channel layer; a position, which is not covered by the source and the drain, on the n-type doped gallium oxide channel layer is etched into an inclined plane to obtain a sample; a dielectric layer grows on the surface, which is not covered by the source and the drain of the sample; and a gate electrode is prepared on the inclined surface of the dielectric layer. The gate can be located on one inclined plane in an inclined plane etching mode, the angle of the end point, close to the drain, of the gate is increased, a lower peak electric field of the gate is effectively restrained, electric field distribution is more uniform, and therefore the breakdown voltage of the gallium oxide field effect transistor is greatly increased, and the conduction characteristic of the gallium oxide field effect transistor is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a gallium oxide field effect transistor and a preparation method thereof. Background technique [0002] Gallium oxide is an ultra-wide bandgap power electronic device. As a new semiconductor material, ultra-wide bandgap gallium oxide has outstanding advantages in terms of breakdown field strength, Ballyga figure of merit and cost. The Baliga figure of merit is used to characterize how well a material is suitable for power devices. Ultra-wide bandgap gallium oxide power devices have lower on-resistance and lower power consumption under the same withstand voltage conditions as gallium nitride and silicon carbide devices, and can greatly reduce the power loss during device operation. [0003] However, gallium oxide Ga 2 o 3 Although field effect transistor devices can be improved by increasing the Ga 2 o 3 Improve Ga 2 o 3 FET device performan...

AI Technical Summary

Problems solved by technology

[0003] However, gallium oxide Ga 2 o 3 Although field effect transistor devices can be improved by increasing the Ga 2 o 3 Improve Ga 2 o 3 FET device performance, but the Ga 2 o 3 The breakdown voltage and conduction characteristics of field effect transistor devices are still far below the expected values ​​of materials

Images