73results about How to "Improve conduction characteristics" patented technology

A transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use, and a semiconductor device including the transistor are provided. In a transistor in which a semiconductor layer, a source electrode layer and a drain electrode layer, a gate insulating film, and a gate electrode layer are stacked in this order over an oxide insulating film, an oxide semiconductor stack composed of at least two oxide semiconductor layers having different energy gaps is used as the semiconductor layer. Oxygen and/or a dopant may be introduced into the oxide semiconductor stack.

A miniaturized transistor having excellent electrical characteristics is provided with high yield. Further, a semiconductor device including the transistor and having high performance and high reliability is manufactured with high productivity. In a semiconductor device including a transistor in which an oxide semiconductor film including a channel formation region and low-resistance regions between which the channel formation region is sandwiched, a gate insulating film, and a gate electrode layer whose top surface and side surface are covered with an insulating film including an aluminum oxide film are stacked, a source electrode layer and a drain electrode layer are in contact with part of the oxide semiconductor film and the top surface and a side surface of the insulating film including an aluminum oxide film.

The invention provides an SOI-RC-LIGBT device and a preparation method thereof. The SOI-RC-LIGBT device comprises an N-type substrate, a buried oxide layer, an N-type drift region, a trench gate structure, a P-type base region, an N+ source region, a P+ contact region, an emitting electrode, an oxide layer, an N-type buffer region and a P-type collector region; an N-type strip is arranged on the surface of the portion, between the P-type base region and the N-type buffer region, of the N-type drift region, and a P-type buried layer is arranged in the portion, below the N-type strip, of the drift region; a medium trench structure is arranged between the right sides of the N-type strip and the P-type buried layer and the left sides of the N-type buffer region and the P-type collector region;an N+ collector region is arranged between the N-type strip and the medium trench structure. According to the SOI-RC-LIGBT device, while the IGBT conduction characteristic snapback phenomena are eliminated, the breakdown voltage of the device is improved, the forward conduction voltage drop of the device is reduced, the shutoff speed is increased, the shutoff loss is reduced, and meanwhile, the reverse recovery characteristics of an integrated free-wheeling diode are improved.

An anode-short tunnel pump IGBT belongs to the technical field of semiconductor power devices. With an anode-short structure and a tunnel pump structure simultaneously introduced into a traditional IGBT, or a tunnel pump structure into an anode-short IGBT, or an anode-short structure into a tunnel pump IGBT, the invention gives the advantages of both the anode-short IGBT and the tunnel pump IGBT to the anode-short tunnel pump IGBT so as to improve the turn-off characteristic of the device and lower the conductive voltage drop of the device. The invention can better reconcile the positive saturation voltage drop with the turn-off time, and optimize the conductive characteristic of the device, so that the invention is suitable in particular for application environments characterized by high voltage, heavy current and high frequency.

The embodiment of the invention discloses a semiconductor device and a converter. The semiconductor device provided by the invention comprises a low-voltage switch device, a first diode and a second diode, wherein the low-voltage switch device and the first diode form a series structure, the second diode is connected in parallel with two ends of the series structure formed by the low-voltage switch device and the first diode, the current passing directions of the first diode and the second diode are consistent, the first diode is a low-conduction voltage drop diode, and the second diode is a low-reverse recovery diode. When the semiconductor device is in a conduction state, control equipment controls the low-voltage switch device to be conducted, and simultaneous follow current is performed by the first diode and the second diode to reduce conduction voltage drop of the semiconductor device; and when the semiconductor device is switched off, the control equipment controls the low-voltage switch device to be switched off in advance of preset time, so that a load current is completely transferred to the second diode, and current exchange is achieved by the second diode and a complementary device to reduce a reverse recovery current of the semiconductor device.

The invention provides a trench silicon carbide power device with low on-resistance and a manufacturing process thereof. The cell of the trench silicon carbide power device comprises an N-type substrate, an N-type epitaxial layer and a trench, wherein the trench is internally provided with a gate oxide layer and a polysilicon gate, a P-type body region, an N-type source region and a P+ body contact region are arranged on the two sides of the trench, a P shielding layer is arranged below the trench, and an N-type buried layer is arranged on the side of the P shielding layer. The manufacturing process of the N-type buried layer comprises the steps of epitaxially growing a first part of an N-type drift region on the N-type substrate, forming a P shielding layer and an N-type buried layer on the first part of the N-type drift region by adopting an ion implantation process, continuing to epitaxially form a second part of the N-type drift region, and carrying out a subsequent process flow. According to the invention, two sides of the P shielding layer are provided with the N-type buried layers, the electric field peak is moved downwards, the trench corner electric field is reduced, the interface state density and defects are reduced, and the reliability of the gate oxide layer is improved; and an N-type buried layer below is eliminated, the gate charge of the device is reduced, the switching characteristic is improved, and the withstand voltage of the device is further improved.

The invention provides a Delta channel doping SiC vertical power MOS device manufacturing method. The method comprises the steps of: cleaning the surface of an N-/N+ type SiC epitaxial wafer; carrying out layered doping in a CVD furnace; etching out a P-base region and injecting high temperature Al irons; etching out an N+ doping source region and injecting high temperature N irons; etching out a P+ contact region and injecting high temperature Al irons; forming a carbon protection film on the surface of the N-/N+ type SiC epitaxial wafer; annealing high temperature iron injection; removing the surface carbon film; carrying out acid cleaning; growing a SiO2 insulating layer; growing a bottom drain electrode; smearing stripping glue and a photoresist, etching out a source contact hole, carrying out source metal deposition, and stripping the source metal to form a source pattern; annealing source and drain electrodes; forming a grid electrode; and forming a grid and source interconnection electrode. According to the invention, the channel effective migration rate of the vertical power MOS device is effectively improved, the threshold voltage of the device is reduced, and the conduction characteristic of the vertical power device is improved.

The invention belongs to the power semiconductor integration circuit field and especially relates to a transverse reverse conducting insulated gate bipolar transistor (Reverse Conducting-LIGBT, RC-LIGBT) and a manufacturing method thereof. The device and the method are used for restraining a snapback phenomenon of a traditional RC-LIGBT device, simultaneously improving a reverse direction diode characteristic and increasing stability and reliability of the device. By using the RC-LIGBT device, through introducing a composite structure into a collector electrode terminal of the device to form a one-way conductive path possessing two channels, under a forward direction LIGBT work mode, an influence of an N-type collecting zone on a conduction characteristic is completely shielded, the snapback phenomenon is completely eliminated, a low conduction voltage drop which is the same with the voltage drop of a traditional LIGBT is possessed and stability and reliability of the device are increased. Simultaneously, under a reverse direction diode follow current work mode, two follow current channels are provided on the collector electrode terminal, a follow current capability is optimized and a small conduction voltage drop is possessed.

By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film.

The invention relates to the technical field of semiconductor, in particular to a normally-closed GaN-based MOSFET structure with a high threshold voltage and high conduction performance and a fabrication method thereof. The fabrication method of the normally-closed GaN-based MOSFET structure with the high threshold voltage and high conduction performance comprises the following steps of firstly,providing a required substrate, sequentially and epitaxially growing a stress buffer layer, a GaN buffer layer, an AIN thin layer and an AlGaN thin layer on the substrate, and reserving the AlN thin layer and the AlGaN thin layer on a grid region by etching to obtain a substrate for epitaxy of a selection region; secondly, sequentially selecting a regional epitaxial GaN channel layer, a AIN insertion layer and a AIGaN barrier layer on the substrate to form a groove structure; and finally, depositing a grid dielectric layer, covering grid metal on a groove channel grid dielectric layer, and covering two ends of the grid with metal to form a source and a drain. By the fabrication method, the threshold voltage and the grid region mobility can be effectively improved, the channel resistance isreduced, and the conduction performance of the GaN MOSFET device is improved.

The invention discloses a silicon carbide trench type MOSFET device and a preparation method thereof. The structure of the device mainly comprises an N+ type silicon carbide substrate 1; an N- type drift region 2, a P type base region 3 and an N+ type source region 4 are sequentially arranged on the N+ type silicon carbide substrate 1; a drain electrode 10 is arranged on the lower portion of the N+ type silicon carbide substrate 1, and an inverted trapezoidal deep groove is formed in the top of the N- type epitaxial layer and comprises a gate dielectric layer 6 and a gate electrode 7; and thedeep groove divides each of the P type base region 3 and the N+ type source region 4 into two parts. According to the silicon carbide trench type MOSFET device and the preparation method thereof of the invention, on the basis of a characteristic that silicon carbide {0-33-8} plane systems have the highest channel carrier mobility, the conduction characteristic of the device is improved by introducing the inverted trapezoidal deep trench structure; A base region is implanted with ions after groove etching, so that a V-shaped deep trench gate dielectric layer is protected in a blocking state, and therefore, the blocking characteristic of the device is improved; a characteristic that the oxidation rates of different crystal surfaces of silicon carbide are different, the structure enables theside wall gate dielectric layer of the trench to be thinner, and the bottom gate dielectric layer of the trench to be thicker can be realized more conveniently, and therefore, the device has reasonable threshold voltage and higher blocking voltage at the same time.

The invention discloses an array substrate and a micro total analysis device. The array substrate includes a substrate, a plurality of pixel regions which are arranged on the substrate and limited bycrossing of a data line and a grid line, and driving transistors in the pixel regions, wherein each driving transistor includes an active layer graph, and a first preset angle is displayed between theextending direction of the active layer graph and the grid line, and the active layer graph strides the pixel region in an inclined manner in the first preset angle direction; and the source and drain electrodes of each driving transistor are connected to the active layer graph in the first preset angle direction. By setting the first preset angle between the extending direction of active layer graph and the grid line, compared with a conventional device which sets the extending direction of the active layer to be parallel with the grid line, the array substrate can increase the length of theactive layer graph in the extending direction, thus increasing the length breadth ratio of the active layer graph while not increasing the area of the occupied pixel area, so as to improve the conductivity of the driving transistors while realizing high pixel design.

The invention provides a resonant isolating transformer with an ultra-wide voltage regulating range. The resonant isolating transformer is characterized by comprising a first half-bridge LLC resonantnetwork with a first transformer and a second half-bridge LLC resonant network with a second transformer, wherein the sub edge of the first transformer is the output end of the first half-bridge LLC resonant network; the sub edge of the second transformer is the output end of the second half-bridge LLC resonant network; the input voltage is simultaneously input into the first half-bridge LLC resonant network and the second half-bridge LLC resonant network; the output end of the first half-bridge LLC resonant network and the output end of the second half-bridge LLC resonant network are connected in series, are then sequentially connected with a rectifying circuit and a filter circuit and are then connected with a load. The voltage reduction capability of an LLC resonant circuit is greatly improved; the voltage can be reduced to 0 under any load condition; the zero voltage conduction characteristic of a raw edge switch is greatly improved.

A heat dissipation module includes a hollow housing, a plurality of heat dissipation fins and heat dissipation liquid. The hollow housing includes a chamber, a side surface, a top surface and a bottom surface opposite to the top surface. The side surface is connected to the top surface and the bottom surface. The heat dissipation fins are disposed on the side surface. The heat dissipation liquid is contained within the chamber, and a specific heat of the heat dissipation liquid is substantially greater than or equal to 1 cal/g° C.

The invention relates to a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with improved gate bottom charge balance and a manufacturing method thereof, the device comprises an epitaxial wafer structure with a charge balance column, an embedded gate structure, a source electrode structure positioned on the top layer and a drain electrode structure positioned on the bottom layer, and a grooved channel compliant layer is formed on a silicon carbide epitaxial layer of the epitaxial wafer structure. Non-planar ohmic contact is formed by the source electrode structure and the epitaxial wafer structure through the contact grooves located in the two sides of the grid electrode structure. A charge balance column located below a gate trench and a contact trench and basically formed by a preset laminated well is utilized to prevent the charge balance column from penetrating into a silicon carbide substrate of an epitaxial wafer structure. The method has the effect of standardizing the bottom depth and appearance of the gate bottom charge balance junction to be in a relatively good section column shape, so that the defects that the injection concentration of the charge balance junction cannot be adjusted, a junction side column cannot be formed and the electrical performance is unstable due to the fact that the depth of the junction bottom changes along with the depth of the groove on the basis of the arrangement of the channel compliant layer are overcome.

The invention relates to the field of semiconductors, in particular to a Schottky diode and a preparation method thereof. The Schottky diode comprises: a substrate; an n-type gallium oxide layer formed on the substrate, wherein the n-type gallium oxide layer comprises at least one first thermal oxidation region and two second thermal oxidation regions; an anode metal layer which is formed on the n-type gallium oxide layer; the first thermal oxidation region located below the anode metal layer, wherein the second thermal oxidation regions are partially located below the anode metal layer; a cathode metal layer which is formed on the back surface of the substrate, wherein at least one first thermal oxidation region is provided with a groove structure. Compared with an existing Schottky diode, the Schottky diode has the advantages that the electric field at the anode junction is better, and the high-voltage resistance characteristic and the conduction characteristic are better.

The invention provides a transverse power device with a mixed conductive pattern and a preparation method thereof. The transverse power device includes a P-type liner, a buried oxidation layer, an N-type drift area, a P-type basic area, an N-type buffer area, an N-type source area, a P-type contact area, a P-type collecting electrode area, an emitting electrode, a collecting electrode, a gate medium layer and a gate electrode; the surface of the N-type drift area is provided with N-type strips and P-type strips, the N-type strips and the P-type strips are arrayed on the surface of the drift area of the device body in the direction perpendicular to the length direction of a gutter alternatively, and the drift area below the N-type strips and the P-type strips is internally provided with a medium burying layer; medium groove structures are arranged among the N-type strips, the P-type strips, the medium burying layer and the N-type buffer area; the concentration of the N-type strips and the P-type strips is higher than that of the N-type drift area. According to the transverse power device, mixed conduction of an SJ-LDMOS and an LIGBT at the surface is achieved, a lower conduction voltage drop, a higher endurable voltage, higher switch-on and switch-off speed and lower switch-off loss can be obtained, a snapback effect is eliminated, and the performance of the device is greatly improved.

A superconducting magnet includes a superconducting wire including magnesium diboride; a superconducting coil where a part of the superconducting wire is wound; and a joint where an end of the superconducting wire and an end of another superconducting wire are connected and united. The joint includes a sintered body including magnesium diboride, an averaged particle diameter of magnesium diboride at the joint of the superconducting wire is greater than an averaged particle diameter of the magnesium diboride at the part where the superconducting wire is wound.