2results about How to "Improve conduction characteristics" patented technology

The application discloses a kind of copolymer organic semiconductor devices based on isolation and interconnection and preparation method, including substrate, photoetching blocking layer, insulating isolation layer, N organic field effect transistor and N-1 interconnection line;Photoetching blocking layer includes isolation layer and inorganic dielectric layer;Isolation layer is opened with N longitudinal through isolation groove along length direction;Inorganic dielectric layer includes lower dielectric layer and upper dielectric layer;Lower dielectric layer is located in N isolation, and upper dielectric layer is laid on the top of isolation layer and lower dielectric layer;Each organic field effect transistor includes semiconductor layer, source, drain and gate;Semiconductor layer is laid in the isolation groove at the bottom of corresponding lower dielectric layer section, and its material is organic copolymer.The application effectively utilizes isolation groove and photoetching blocking layer, and the semiconductor layer of different semiconductor materials is wrapped and isolated, so as to realize the integration of different organic field effect transistors on the same substrate, and the organic field effect transistor can realize effective interconnection.

The invention discloses an activation and surface protection method for ion implantation SiC, and relates to the technical field of semiconductor manufacturing. Comprising the following steps: performing high-temperature ion implantation on a SiC wafer; pVD carbon film plating is carried out on the SiC wafer after high-temperature ion implantation; performing laser activation annealing on the SiC wafer plated with the carbon film; performing plasma physical etching on the annealed SiC wafer; carrying out sacrificial oxide layer treatment on the SiC wafer subjected to plasma physical etching; and carrying out BOE solution wet etching on the SiC wafer after sacrificial oxide layer treatment to obtain the SiC device. According to the method, through high-temperature ion implantation and laser annealing treatment and by adopting a multi-step carbon film removal process, the ion implantation impurity activation efficiency is remarkably improved, meanwhile, the morphology of the device is guaranteed, and the performance of the device is improved. The method has the advantages of simple process, high activation efficiency, good repeatability and the like, and is suitable for manufacturing SiC-based power semiconductor devices.