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7results about How to "Avoid insulation breakdown" patented technology

Adjustable transformer outgoing line structure for butt joint of SF6 totally-enclosed combined electric appliance

The invention provides an adjustable transformer outgoing line structure in butt joint with an SF6 totally-enclosed composite apparatus, which comprises a flange, an ascending flanged base and a voltage-sharing ball, the ascending flanged base is installed on the top of an oil tank of the transformer. The flange is arranged on an oil-SF6 sleeve of the transformer in a sleeving mode and connected with one end of the ascending flanged base, and the voltage-sharing ball is installed in the oil-SF6 sleeve and connected with a lead of the transformer; the other end of the ascending flanged base is connected with an oil tank of the transformer. By adopting an adjustable wire outlet structure, fine adjustment can be carried out on site according to actual installation conditions, and accurate butt joint between the oil-SF6 sleeve and the SF6 totally-enclosed composite apparatus and the transformer is ensured.
Owner:CHANGZHOU XIDIAN TRANSFORMER CO LTD +1

schottky barrier diode

ActiveCN114830354BAvoid insulation breakdownSchottky barrierInsulation layer
The present application has an object to prevent insulation breakdown caused by misalignment of a trench and a field insulation layer in a Schottky barrier diode of gallium oxide. The Schottky barrier diode includes an anode electrode (40) in Schottky contact with a drift layer (30), a cathode electrode (50) in ohmic contact with a semiconductor substrate (20), an insulation film (63) covering an inner wall of a trench (61) provided in the drift layer (30), a metal film (64) covering the inner wall of the trench (61) through the insulation film (63) and electrically connected to the anode electrode (40), and a field insulation layer (70). The field insulation layer (70) includes a first portion (71) between an upper surface (31) of the drift layer (30) and the anode electrode (40) and a second portion (72) covering the inner wall of the trench (61) through the metal film (64) and the insulation film (63). Thus, even if the alignment of the trench (61) and the field insulation layer (70) is misaligned, insulation breakdown does not occur.
Owner:TDK CORP

Schottky barrier diode

ActiveEP4300586A4avoid failureAvoid insulation breakdownSemiconductor devices
To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode 11 has a drift layer 30 provided on a semiconductor substrate 20, an anode electrode 40, and a cathode electrode 50. A part of the anode electrode 40 is embedded in an outer peripheral trench 61 and a center trench 62 through an insulating film 63. The insulating film 63 is formed such that the thickness thereof in the depth direction of the outer peripheral trench 61 becomes larger toward the outside, whereby an outer peripheral wall S1 of the anode electrode 40 embedded in the outer peripheral trench 61 is curved so as to approach vertical toward the outside. This results in relaxation of an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench 61 upon application of a backward voltage.
Owner:TDK CORP

Semiconductor device, method for manufacturing semiconductor device, and power conversion device

The invention provides a semiconductor device capable of preventing insulation breakdown of an insulating film facing a gate electrode near a boundary between an active region and an inactive region. The second trench (TR2) is provided in the non-active region (RI), is in contact with the active region (RA), and has a second side wall (SW2) and a second bottom (BT2), the second side wall (SW2) having a length portion (SW2a) and a width portion (SW2b). A second bottom diffusion layer (17) of the second conductivity type is provided on at least a portion of the second bottom portion (BT2). A second side wall diffusion layer (16b) of the second conductivity type is provided in at least one of the length portion (SW2a) and the width portion (SW2b). The gate electrode (18) includes gate embedded portions (18b) respectively embedded in the plurality of first trenches (TR1), and gate wiring portions (18w) extending from the gate embedded portions (18b) into the second trenches (TR2). A second bottom portion diffusion layer (17) is disposed in at least a portion of the second bottom portion (BT2) where the gate wiring portion (18w) is disposed in plan view.
Owner:MITSUBISHI ELECTRIC CORP

Electrostatic chuck

This electrostatic chuck is provided with: a dielectric substrate; a base plate which is a metal member bonded to the dielectric substrate and in which air holes are formed; and a ventilation insert disposed inside the air hole. The ventilation insert is provided with: a porous part which is a part formed by porous ceramic having air permeability; and a dense part which is a portion formed of a dense ceramic that does not have air permeability and which surrounds the porous part over the entire circumference from the outer circumferential side. The porous part and the dense part are integrated with each other by sintering instead of a bonding material formed of a material other than ceramic.
Owner:TOTO LTD

Protective suspension type closing resistor unit structure

The utility model relates to a protective suspension type closing resistor unit structure, which comprises a plurality of resistor sub-strings which are arranged in a shell and are connected in series, the resistor sub-strings comprise insulating rods which are arranged on a front end cover and a rear end cover in a delta shape, a plurality of I-shaped insulating sheets which are arranged along the axial direction of the insulating rods are arranged on the insulating rods, and the insulating sheets are arranged on the front end cover and the rear end cover. An annular resistor disc is arranged in the insulation sheet, an annular deformation groove located at the corner is formed in a concave ring of the insulation sheet, and the corresponding resistor discs on different insulation rods are connected through copper sheets, space is provided for the edges of the resistor discs through the arrangement of the deformation grooves, the edges of the resistor discs are prevented from being broken, and deflection deformation of the cross-core insulation rod is reduced; through the arrangement of the outer lining, impact damage of airflow to the appearance surface structure of the resistor disc in the inflation and deflation process is prevented, and even if slight abrasion exists, dust particles fall into the trap through the arrangement of the pull-out type particle trap on the shell and the slag falling hole of the outer lining, and insulation breakdown is avoided.
Owner:SHANDONG TAIKAI HIGH VOLTAGE SWITCH

High-water-resistance cable

The utility model discloses a high water-blocking cable, including control wire core, main wire core, insulating layer, water-blocking layer, armor layer and oversheath, the control wire core and the main wire core wrap inside the insulating layer to form a cable core, the insulating layer sequentially wrap the water-blocking layer, armor layer and oversheath, the water-blocking layer is a water-blocking tape, the armor layer is a water-blocking tape, and the oversheath is a water-blocking tape. The water-blocking tape sequentially comprises a base material layer, an expansion layer, a water absorption layer and a covering layer from inside to outside, and the component of the water absorption layer is polyenol. According to the utility model, the water absorption layer is made of polyenol, can effectively replace the existing sodium polyacrylate water absorption material, is neutral after absorbing water, can effectively avoid the phenomenon of pitting corrosion of the cable, and greatly avoids the fault of the cable.
Owner:FAR EAST CABLE +3