Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber

A substrate processing and cleaning method technology, applied in cleaning methods and appliances, chemical instruments and methods, discharge tubes, etc., can solve the problems of oxide film insulation damage, stability, difficult plasma state, etc., and achieve the effect of inhibiting the reaction

Active Publication Date: 2007-08-22
TOKYO ELECTRON LTD
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Problems solved by technology

In addition, it becomes difficult to apply a DC voltage to the processing space because the DC power supply cannot pass through the oxide film
Furthermore, since the oxide film may be dielectrically broken by direct current, it is difficult to stabilize the state of the plasma in the processing space.

Method used

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  • Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber
  • Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber
  • Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber

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Embodiment Construction

[0041] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0042] First, a plasma processing apparatus applied to the cleaning method of the substrate processing chamber in each embodiment of the present invention described later will be described.

[0043] 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus applied to a cleaning method of a substrate processing chamber in each embodiment of the present invention. This plasma processing apparatus is configured to be capable of performing RIE (Reactive Ion Etching) processing or ashing processing on a semiconductor wafer W serving as a substrate.

[0044] In FIG. 1 , the plasma processing apparatus 10 has a cylindrical substrate processing chamber 11 having a processing space S therein. In addition, in the substrate processing chamber 11, for example, a cylindrical susceptor 12 having a diameter of 300 mm is arranged as a ...

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Abstract

The invention provides a method for cleaning a baseplate processing chamber, which can prevent oxidation film from forming on the surface of a part in the baseplate processing chamber. In a plasma processing device (10) with reaction products adhering to the surface of an upper plate electrode (38), after a wafer (W) is moved out of the baseplate processing chamber (11), oxygen is led into the processing space (S) of the baseplate processing chamber, and the pressure of the processing space (S) is set to be 26.7Pa to 80.0Pa. The potential difference of the surface of the plate electrode and the space is set to be 0eV; and high frequency power of 40MHz is set to be below 500W. High frequency power of 40MHz is used for generation of plasma for dry-cleaning. Carbon tetrafluoride gas is further led into the processing space (S), and high frequency power of 40MHz and 2MHz is used for generating plasma for removal of oxide.

Description

technical field [0001] The present invention relates to a cleaning method of a substrate processing chamber, a storage medium, and a substrate processing chamber, and particularly to a cleaning method of a substrate processing chamber provided with electrodes made of silicon. Background technique [0002] A plasma processing apparatus is known that includes a substrate processing chamber having a processing space into which a semiconductor wafer as a substrate is loaded, and a lower electrode which is arranged in the processing space and is connected to a high-frequency power supply. In this plasma processing apparatus, the processing gas is introduced into the processing space, and the lower electrode applies high-frequency power to the processing space. Then, when the semiconductor wafer is carried into the processing space and placed on the lower electrode, the introduced processing gas is converted into plasma by high-frequency power to generate ions and the like, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/00H01L21/306H01L21/02B08B7/00
CPCH01J37/32862Y10S438/905
Inventor 本田昌伸松井裕
Owner TOKYO ELECTRON LTD
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