Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber

A substrate processing and cleaning method technology, applied in cleaning methods and appliances, chemical instruments and methods, discharge tubes, etc., can solve the problems of oxide film insulation damage, stability, difficult plasma state, etc., and achieve the effect of inhibiting the reaction
CN101022693AActive Publication Date: 2007-08-22TOKYO ELECTRON LTD
1 Cites 8 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2007-08-22

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a method for cleaning a baseplate processing chamber, which can prevent oxidation film from forming on the surface of a part in the baseplate processing chamber. In a plasma processing device (10) with reaction products adhering to the surface of an upper plate electrode (38), after a wafer (W) is moved out of the baseplate processing chamber (11), oxygen is led into the processing space (S) of the baseplate processing chamber, and the pressure of the processing space (S) is set to be 26.7Pa to 80.0Pa. The potential difference of the surface of the plate electrode and the space is set to be 0eV; and high frequency power of 40MHz is set to be below 500W. High frequency power of 40MHz is used for generation of plasma for dry-cleaning. Carbon tetrafluoride gas is further led into the processing space (S), and high frequency power of 40MHz and 2MHz is used for generating plasma for removal of oxide.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a cleaning method of a substrate processing chamber, a storage medium, and a substrate processing chamber, and particularly to a cleaning method of a substrate processing chamber provided with electrodes made of silicon. Background technique

[0002] A plasma processing apparatus is known that includes a substrate processing chamber having a processing space into which a semiconductor wafer as a substrate is loaded, and a lower electrode which is arranged in the processing space and is connected to a high-frequency power supply. In this plasma processing apparatus, the processing gas is introduced into the processing space, and the lower electrode applies high-frequency power to the processing space. Then, when the semiconductor wafer is carried into the processing space and placed on the lower electrode, the introduced processing gas is converted into plasma by high-frequency power to generate ions and the like, and th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More