The invention provides an epitaxial method for improving
crystal point defects on the back surface of an epitaxial
wafer, and the method mainly comprises the steps: carrying out the
epitaxy through employing Poly and LTO in sequence, and carrying out the
epitaxy through employing a perforated
graphite disc, and obtaining an 8-inch epitaxial
wafer. The epitaxial
wafer can be used for a
power semiconductor device, a photoelectric
semiconductor device, a
radio frequency and
microwave device and a power
integrated circuit. The method has the advantages that the perforated
graphite disc is used for
epitaxy, reaction gas entering the back of the substrate in the epitaxy process can be discharged to the lower part of the
reaction chamber along the holes in the surface of the
graphite disc, aggregation reaction on the back of the substrate is greatly reduced, and the
crystal point defects on the back of the epitaxial wafer are greatly reduced; besides, in the epitaxy process, HCl gas is introduced into the lower end of the graphite plate, the HCl gas enters the back surface of the substrate through holes of the graphite plate to achieve the effect of
etching crystal points on the back surface, and meanwhile, the HCl serving as a by-product in the epitaxy process can also achieve the effects of inhibiting the
chemical reaction of SiHCl3 and H2 and reducing the generation of crystal point defects on the back surface.