4 results about "Pentafluoride" patented technology

A method for preparing a pentafluorosulfenyl aryl compound is disclosed. The method comprises reacting an aryl thioate, aryl thiol, or diaryl disulfide with iodine pentafluoride in the presence or absence of one or more additives to form an aryl sulfenyl pentafluoride, wherein the additive is selected from the group consisting of a fluoride salt, a non-fluoride salt, and an unsaturated organic compound.

The present invention relates to a method for removing MoFx or MoFx and MoOFx, including: bringing a halogen-containing gas into contact with a member having a deposit or a coating of MoFx or MoFx and MoOFx (where x represents a number greater than 0 and less than 6); and removing MoFx or MoFx and MoOFx from the member, a method for removing a deposit or a coating from a member having the deposit or the coating of MoFx or MoFx and MoOFx mixed as impurities in MoF6 by a method for producing a semiconductor device including the above removing method, and a method for producing a semiconductor device that includes removing a deposit or a coating from a semiconductor device production apparatus having a deposit or coating of MoFx or MoFx and MoOFx, and that can avoid clogging or contamination of the production apparatus.

Provided are: a method for removing MoFx or MoFx and MoOFx, wherein a halogen-containing gas is brought into contact with a member having MoFx or MoFx and MoOFx deposited or coated thereon (where x represents a number greater than 0 and less than 6) to remove the MoFx or the MoFx and MoOFx from the member; and a method for manufacturing a semiconductor device, the method comprising said removal method. By using these methods, provided are: a method for removing deposited or coated matter from a member on which MoFx or MoFx and MoOFx, which are incorporated into MoF6 as impurities, are deposited or coated; and a method for manufacturing a semiconductor device, the method comprising a step for removing deposited or coated matter from a manufacturing apparatus for a semiconductor device on which MoFx or MoFx and MoOFx are deposited or coated, wherein clogging or contamination of the manufacturing apparatus can be avoided.

The invention discloses an electrolyte, a preparation method thereof and application of the electrolyte in a lithium / carbon fluoride primary battery. The electrolyte contains lithium salt, lipid substances, ether substances, sulfone substances and additives. The purpose of regulating and controlling the solvation structure in the electrolyte is achieved by optimizing and adjusting the ratio, the lithium salt, the lipid solvent and the sulfone solvent can form a double-layer solvation shell layer, the viscosity and density of the electrolyte can be reduced by the ether solvent, and the discharge capacity of the lithium / carbon fluoride battery can be exerted and the specific energy of the battery can be integrally improved. The phenyl sulfur pentafluoride additive has the effects of improving the wettability of the electrolyte and reducing side reactions on the surface of the electrode, and the discharge voltage is improved; in addition, in the discharging process of the lithium carbon fluoride battery, the phenyl sulfur pentafluoride additive is reduced and decomposed, and the discharging capacity is contributed. In conclusion, due to the appropriate solvation structure in the electrolyte, the lithium / carbon fluoride primary battery shows excellent energy performance through the additives, and the actual application process of the lithium-carbon fluoride battery is further promoted.