442results about How to "Few defect" patented technology

A semiconductor light emitting element of nitride compound semiconductors excellent in cleavability, heat radiation and resistance to leakage is made by epitaxially grow a nitride compound semiconductor layers on a substrate of sapphire, for example, and thereafter separating the substrate. For separating the substrate, there are a technique using a abruption mechanism susceptible to a stress such as a "lift-off layer" and a recesses on a substrate. A technique using laser light to cause a local dense heat stress at the abruption mechanism is effective. A nitride compound semiconductor obtained by separating the substrate may be used as a new substrate to epitaxially grow high-quality nitride compound semiconductors thereon.

Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.

Electrochemical cells, and more specifically, rechargeable batteries comprising lithium anodes for use in water and/or air environments, as well as non-aqueous and non-air environments, are presented. In one embodiment, an electrochemical cell includes an anode comprising lithium and a multi-layered structure positioned between the anode and an electrolyte of the cell. A multi-layered structure can include at least a first single-ion conductive material layer (e.g., a lithiated metal layer), and at least a first polymeric layer positioned between the anode and the single-ion conductive material. The invention also can provide an electrode stabilization layer positioned within the electrode, i.e., between one portion and another portion of an electrode, to control depletion and re-plating of electrode material upon charge and discharge of a battery. Advantageously, electrochemical cells comprising combinations of structures described herein are not only compatible with environments that are typically unsuitable for lithium, but the cells may be also capable of displaying long cycle life, high lithium cycling efficiency, and high energy density.

A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

Electrode protection in electrochemical cells, and more specifically, electrode protection in both aqueous and non-aqueous electrochemical cells, including rechargeable lithium batteries, are presented. In one embodiment, an electrochemical cell includes an anode comprising lithium and a multi-layered structure positioned between the anode and an electrolyte of the cell. A multi-layered structure can include at least a first single-ion conductive material layer (e.g., a lithiated metal layer), and at least a first polymeric layer positioned between the anode and the single-ion conductive material. The invention also can provide an electrode stabilization layer positioned within the electrode, i.e., between one portion and another portion of an electrode, to control depletion and re-plating of electrode material upon charge and discharge of a battery. Advantageously, electrochemical cells comprising combinations of structures described herein are not only compatible with environments that are typically unsuitable for lithium, but the cells may be also capable of displaying long cycle life, high lithium cycling efficiency, and high energy density.

A graphene sheet including graphene comprising ten or fewer wrinkles per 1,000 square micrometers of the graphene.

Sulfonate salts have the formula: CF₃—CH(OCOR)—CF₂SO₃⁻M⁺ wherein R is C₁-C₂₀ alkyl or C₆-C₁₄ aryl, and M⁺ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

A resist composition contains; a resin having a structural unit derived from a compound represented by the formula (a); and an acid generator.

An analytical software design system arranged to receive informal system design specifications and to convert them into verified design specifications for use in creating source code and carrying out implementation testing of the source code is described. The system comprises a verified black box specification generator arranged to process the received informal system design specifications to create formal specifications; to generate from the formal specifications mathematical models representing the system behaviour; to analyse the mathematical models to determine if they have the required behaviour; to adjust the formal specifications until the required behaviour is achieved; and to derive the required verified design specifications from the mathematical models.

When a SOI substrate is produced a first silicon layer epitaxially grown on the insulating underlay is ion implanted to make deep part of interface of the silicon layer amorphous, and then annealed to recrystallize. Next, the silicon layer is heat treated to oxidize part of the surface side, and after the silicon oxide is removed by etching, a silicon layer is epitaxially grown on the remaining first silicon layer to form a second silicon layer. Subsequently, the second silicon layer is again ion implanted to make deep part of interface amorphous, then annealing is performed to recrystallize. With this method, a SOI substrate, which is very small in crystal defect density of the silicon layer and good in surface flatness, can be produced. Therefore, on the semiconductor substrate an electronic device or optical device having high device performance and reliability can be realized.

A set of self-service testing tools and processes used to conduct gateway to gateway testing. The system includes a test harness comprising a collection of software and test data configured to test a program unit by running it under varying conditions and monitoring its behavior and outputs. The test harness allows for the automation of tests, and can call functions with supplied parameters and analyze results to a desired value.

Semi-permeable membranes are described that allow for the efficient processing of many liquid based feed solutions, particularly those that contain acids. The membranes of this invention are able to process such feeds with high permeate rates while maintaining excellent retention of dissolved metals, cations, and organic compounds, even in the presence of hot concentrated acids. The semi-permeable membranes of this invention are able to conduct such separations for a useful period of time due to their chemical stability towards acids and their ability to permeate acids.

The image processing apparatus comprises: an image correction unit which applies a correction processing to the digital image data; a subject detection unit which detects a human subject from an input image data; a skin color setting unit which sets skin color information based on the detected human subject; a skin color extraction unit which extracts pixels having a skin color similar to a skin color represented by the set skin color information from the digital image data; an area setting unit which sets mask information used to apply correction only to an area to be corrected; and an image output unit which produces output image data based on the inputted digital image data, the corrected image data and the mask information. In a case where the human subject is not detected, skin color information is set using the pre-defined skin color information.

It is an object of the present invention to provide a light emitting element with high luminous efficiency, less defects, and low voltage, and a light emitting device having such a light emitting element. It is another object of the invention to provide a method of manufacturing such a light emitting element in simpler manner compared with a conventional manner. A light emitting element of the present invention includes a pair of electrodes, a layer containing a composite material, and a light emitting region; wherein the layer containing a composite material contains an organic compound and an inorganic compound; the light emitting region contains a material having a high light emitting property and a material having a high carrier transporting property, and a region containing high concentration of the material having a high light emitting property and a region containing high concentration of the material having a high carrier transporting property are alternately stacked in the light emitting region.

A method for forming a ceramic matrix composite (CMC) component for gas turbine engines. The method contemplates replacing a plurality of plies with insert material. The insert material can be partially cured or pre-cured and applied in place of a plurality of small plies or it may be inserted into cavities of a component in the form of a paste or a ply. The insert material is isotropic, being formed of a combination of matrix material and chopped fibers, tow, cut plies or combinations thereof. The use of the insert material allows for features such as thin edges with thicknesses of less than about 0.030 inches and small radii such as found in corners. The CMC components of the present invention replace small ply inserts cut to size to fit into areas of contour change or thickness change, and replace the small ply inserts with a fabricated single piece discontinuously reinforced composite insert, resulting in fewer defects, such as wrinkles, and better dimensional control.

A luminescence display apparatus including a light blocking structure having a function of reflecting light propagating through the dielectric layer and/or of attenuating light propagating through the dielectric layer, that surrounds a EL element for separating a pixel driving TFT from the EL element. Self-emitted light or external light be attenuated before reaching the TFT by using the light blocking structure to reduce the photo leakage of the TFT to provide the active matrix organic EL display apparatus having the less defects and the excellent gradation controllability.

Three dimensional quantum well transistors and fabrication methods are provided. A quantum well layer, a barrier layer, and a gate structure can be sequentially formed on an insulating surface of a fin part. The gate structure can be formed over the barrier layer and across the fin part. The QW layer and the barrier layer can form a hetero-junction of the transistor. A recess can be formed in the fin part on both sides of the gate structure to suspend a sidewall spacer. A source and a drain can be formed by growing an epitaxial material in the recess and the sidewall spacer formed on both sidewalls of the gate electrode can be positioned on surface of the source and the drain.

There is disclosed a method for heat treatment of a silicon wafer performed in a reducing atmosphere containing hydrogen by utilizing a rapid thermal annealer, wherein the heat treatment comprises a plurality of steps each of which is performed with a differently defined heat treatment condition. In this method, the heat treatment comprising a plurality of steps may be continuously performed without taking out the wafer from an RTA apparatus. The method of the present invention can, in particular, reduce COP density of the silicon wafer surface, reduce its microroughness and haze, and thus improve electric characteristics such as oxide dielectric breakdown voltage and mobility of carriers.