28results about How to "Excellent optical properties" patented technology

The application relates to the field of optical lenses and discloses a camera optical lens which comprises seven lenses in sequence from the object side to the image side, namely a first lens with positive refractive power, a second lens with negative refractive power, a third lens with positive refractive power, a fourth lens with negative refractive power, a fifth lens with positive refractive power, a sixth lens with positive refractive power and a seventh lens with negative refractive power; wherein the focal length of the camera optical lens is f, the focal length of the first lens is f1, the central curvature radius of the object side surface of the third lens is R5, the central curvature radius of the image side surface of the third lens is R6, the on-axis thickness of the second lens is d3, the on-axis distance from the image side surface of the second lens to the object side surface of the third lens is d4, and the following relationships are satisfied: 1.00 <= f1 / f <= 2.00; 2.00 <= d3 / d4 <= 5.00; and -10.00 <= R5 / R6 <= -1.00. The camera optical lens has good optical performance and meets the design requirements of large aperture, wide angle and ultra-thin.

The application provides a saturable absorption device, a preparation method and a low-threshold starting pulse mode-locked laser, and relates to the technical field of lasers. The application discloses a method for preparing a high-quality bismuth copper selenium oxide single crystal by a chemical vapor transport method, and a saturable absorption device prepared by simply using the high-quality bismuth copper selenium oxide single crystal can be applied to a pulse mode-locked laser, and can generate super-short pulse laser output, has high stability and a high signal-to-noise ratio, and has a low starting threshold.

This invention belongs to the field of back-contact battery technology, specifically relating to a back-contact battery and its battery assembly with a specific front-side structure. This specific front-side structure includes a tunneling oxide layer and a specifically doped amorphous silicon layer sequentially disposed on the front side of a silicon substrate. Within the specifically doped amorphous silicon layer, a low-doped amorphous silicon layer, a high-doped amorphous silicon layer, and an oxygen-doped amorphous silicon layer are sequentially disposed along the direction away from the tunneling oxide layer. The specifically doped amorphous silicon layer is doped with phosphorus (P) and contains hydrogen (H). The P doping concentration C1 in the low-doped amorphous silicon layer and the P doping concentration C3 in the oxygen-doped amorphous silicon layer are both lower than the P doping concentration C2 in the high-doped amorphous silicon layer. This specific front-side structure enables the back-contact battery to achieve an absorption rate exceeding 85% for incident light within 400 nm. The back-contact battery of this invention maintains good performance even after long-term exposure to ultraviolet light, improving the battery's UV reliability while achieving high transmittance and high battery efficiency.

The application discloses a heterojunction solar cell and a preparation method thereof. The method comprises the following steps: forming a first microcrystalline silicon layer on one side of a light-receiving surface of a silicon substrate; forming a second microcrystalline silicon layer on the first microcrystalline silicon layer; and forming a third microcrystalline silicon layer on the second microcrystalline silicon layer; the deposition rates of the first microcrystalline silicon layer, the second microcrystalline silicon layer and the third microcrystalline silicon layer are respectively v1, v2 and v3; wherein v2 is less than v1, and v2 is less than v3. By arranging three microcrystalline silicon layers on the light-receiving surface of the silicon substrate and adjusting the relationship of the deposition rates of the three microcrystalline silicon layers during preparation, the optical property of the light-receiving surface of the silicon substrate can be improved, the parasitic absorption of the film layers to ultraviolet light during the working of the heterojunction solar cell is fundamentally prevented, and the performance of the solar cell after illumination is greatly reduced.

This invention provides an organic eutectic material with a controllable charge-transfer exciton diffusion coefficient and its preparation method. The molecular formula of this organic eutectic material is (TSB). x (TSB-Br) 1‑x (TCNB)2, wherein TSB is trans-1,2-stilbene, TSB-Br is trans-4-bromostilbene, TCNB is 1,2,4,5-phenylenetetraacetonitrile, and x is the proportion of TSB molecules. The organic eutectic material prepared by this invention has a regular morphology, high crystallinity, and exhibits both strong and delayed fluorescence emission, with continuously tunable diffusion coefficients for singlet and triplet charge-transfer excitons. The preparation method described in this invention has advantages such as low raw material cost, mild conditions, and simple operation. The prepared (TSB)2... x (TSB-Br) 1‑x (TCNB)2 organic eutectic materials have potential applications in fields such as imaging, photoelectric conversion, and spintronics.

The present application provides a polarizing plate having excellent optical properties and suppressing deviation of the optical properties. The polarizing plate of the present application has a polarizing film having a thickness of 8 μm or less, a monochromatic transmittance of 48% or more, and a degree of polarization of 85% or more, and a protective layer provided on at least one side of the polarizing film, wherein the difference between the maximum and minimum values of the monochromatic transmittance of the polarizing plate in a region of 50 cm 2 width is 1% or less. Another polarizing plate of the present application has a polarizing film having a thickness of 8 μm or less, a monochromatic transmittance of 48% or more, and a degree of polarization of 85% or more, and a protective layer provided on at least one side of the polarizing film, wherein the width of the polarizing plate is 1000 mm or more, and the difference between the maximum and minimum values of the monochromatic transmittance of the polarizing plate at positions in the width direction is 1% or less.

The present application relates to the field of optical lens, provide a kind of zoom lens, the zoom lens is sequentially by the first lens with negative refractive power, the second lens group with positive refractive power, the fifth lens with positive refractive power and the sixth lens with negative refractive power from object side to image side, in zooming, the first lens, the second lens group, the fifth lens and the sixth lens, the interval of adjacent lens or lens group in the direction of optical axis changes, the second lens group is composed of the second lens with positive refractive power, the third lens with negative refractive power and the fourth lens with negative refractive power, and satisfy the following relationship: 1.80≤f_Tele / f_Wide≤2.044;-1.75≤f3 / f2≤-1.35;-1.75≤f4 / f2≤-1.35.The present application becomes small in contraction, in photography, FNO is bright, and has good optical characteristics.

Examples relate to thin films, transparent laminates, applications as cover films, and multilayer electronic devices incorporating the thin film, which possess excellent optical properties such as refractive index, haze, and yellowness, as well as excellent mechanical properties. The thin film includes an elastic layer with a refractive index of 1.48 to 1.58 and a low-temperature damage index (the difference between tensile modulus and tensile strength at a specific temperature), wherein the low-temperature damage index of the elastic layer at -40°C is below 1300 MPa.

The present invention provides a UV-curable protective material composition having excellent flame retardancy and an LED display using the same, and more particularly, to a UV-curable protective material composition including an oligomer having at least one skeleton selected from among polyisobutylene and hydrogenated polybutadiene and having a bifunctional acrylic group; an acrylic monomer; a photoinitiator; and a solid flame retardant including phosphorus, in which the solid flame retardant has a D90 particle size of 2 [mu] m to 20 [mu] m, and the content of the phosphorus is 10 wt% or more based on the total weight of the solid flame retardant. The UV-curable protective material composition exhibits excellent flame retardancy, optical properties, and durability, and is suitable for use in LED displays and the like.

This invention belongs to the field of optoelectronic material preparation technology, specifically relating to a Mg-doped C12A7 translucent ceramic and its preparation method. The method includes the following steps: mixing a calcium-containing precursor, an aluminum-containing precursor, and a magnesium-containing precursor in a specific molar ratio; ball milling the mixture in anhydrous ethanol; drying and sieving to obtain (Ca... 1‑x Mg x )12A7 precursor powder; the (Ca 1‑x Mg x )12A7 precursor powder was pressed and subjected to cold isostatic pressing to obtain (Ca 1‑x Mg x )12A7 precursor block; the (Ca 1‑x Mg x The Mg-doped C12A7 precursor block is placed in an oxygen atmosphere and heated to the target sintering temperature for pressureless sintering to obtain Mg-doped C12A7 ceramic. This invention significantly simplifies the process flow, reduces the complexity and cost of preparation, and effectively achieves high densification of the ceramic.

This invention provides a chemically strengthened glass-ceramic and its preparation. The chemically strengthened glass-ceramic includes a glass-ceramic substrate and a compressive stress layer formed on the surface of the substrate through ion exchange chemical strengthening. The glass-ceramic substrate comprises crystal family 1 and crystal family 2. Crystal family 1 includes crystals having the following structural formula: (Zn x Mg 1‑x‑y Al 2‑2y (Al) 2y Mg y O4, wherein: 0≤x≤1; 0≤y≤1; and 0≤x+y≤1; the crystal group 2 includes zirconium oxide; the compressive stress layer has a CTLD_saf value of 15000~70000 MPa. Compared with the existing LAS microcrystalline glass system, the chemically strengthened microcrystalline glass of the present invention not only has excellent mechanical properties and impact resistance, but also significantly reduces the overall cost.

The invention belongs to the technical field of nano material preparation, discloses a zero-dimensional perovskite nanocrystalline large-scale preparation method based on a room-temperature self-assembly strategy, and aims to solve the technical problems that in the prior art, the uniformity of a product is poor, high luminous efficiency and conductivity are difficult to achieve at the same time, and the wavelength cannot be accurately regulated and controlled. According to the method, a water-in-oil microemulsion system is adopted as a nanoreactor, and the high uniformity of nanocrystal growth is fundamentally guaranteed through a confinement reaction. The composition creatively comprises two ligands: one ligand is a pi-conjugated conductive main functional ligand with surface passivation and charge transfer functions, which solves the problem of poor conductivity caused by the traditional insulating ligand while ensuring high photoluminescence efficiency, and the other ligand is a competitive tuning ligand which forms dynamic competitive balance with the main ligand. The key problems of product uniformity, conductivity, wavelength controllability and the like are synergistically solved, and the prepared nanocrystal has high optical purity, high quantum yield and excellent conductivity.

The optical system disclosed in the embodiments may include a first lens to a fifth lens arranged continuously along the optical axis in a direction from the object side to the image side, wherein each of the first lens to the fifth lens includes an object-side surface and an image-side surface, the effective aperture size of the image-side surface of the first lens is larger than the effective aperture size of the object-side surface of the first lens, and the thickness of the first lens is smaller than the thickness of the second lens.

This invention discloses a method for fabricating a porous GaN-based N-doped gallium β-oxide solar-blind detector, comprising the following steps: Step 1, growing an n-GaN thin film on a first substrate, and electrochemically etching the n-GaN thin film in an electrolyte to prepare nanoporous GaN; Step 2, using the nanoporous GaN as a second substrate, growing an N-doped gallium β-oxide thin film to prepare a nanoporous GaN-based N-doped gallium β-oxide thin film, and annealing it in an atmosphere; Step 3, depositing alloy electrodes on the nanoporous GaN-based N-doped gallium β-oxide thin film to prepare a porous GaN-based N-doped gallium β-oxide solar-blind photodetector. This invention also discloses a porous GaN-based N-doped gallium β-oxide solar-blind detector. This invention solves the key common problems in the prior art, such as high stress in gallium β-oxide thin films, poor crystal quality, and large dark current and slow photoresponse speed in gallium β-oxide solar-blind detectors.

A quantum dot ink composition, a method of preparing the same, and a cured film, a color filter and a display device including the same are disclosed. The quantum dot ink composition includes a ligand compound particularly suitable for AIGS quantum dots, thereby further improving the optical properties and stability of the quantum dots. Furthermore, the method for preparing the quantum dot ink composition allows a ligand compound to be substituted on the surface of the quantum dot with good efficiency, and the substituted ligand compound can be more strongly bonded to the surface of the quantum dot to prepare the quantum dot ink composition having good physical properties, thus, a high-quality display device having further improved optical properties is provided.

This invention provides a camera optical lens, comprising, from the object side to the image side, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, and an eighth lens. The first lens has negative refractive power. The field of view (FOV) of the camera optical lens is , the focal length of the sixth lens is f6, the focal length of the seventh lens is f7, the axial distance from the image side of the second lens to the object side of the third lens is d4, and the axial distance from the image side of the third lens to the object side of the fourth lens is d6, satisfying the following relationships: 100.00°≤FOV≤135.00°; -5.00≤f6 / f7≤-1.00; 0.85≤d4 / d6≤5.00. This camera optical lens not only possesses excellent optical performance but also meets the design requirements of a large aperture and wide angle.

An embodiment of the present disclosure relates to a display device, and more particularly, to a display device capable of improving brightness uniformity in an optical region and enhancing light transmittance in the optical region by connecting a first signal line electrically connected to a voltage line in a region adjacent to the optical region to a second signal line.

A wide-angle lens which easily and appropriately corrects various aberrations such as field curvature, magnification chromatic aberration, and coma aberration, and easily achieves miniaturization of the entire wide-angle lens. The wide-angle lens of the present invention includes, in order from the object side, a first lens which is a negative lens with a concave image side lens surface, a second lens which is a negative lens with a concave image side lens surface, a third lens which is a positive lens with a convex image side lens surface, a fourth lens which is a positive lens with a convex image side lens surface, a fifth lens which is a positive lens, a sixth lens which is a negative lens, and a seventh lens which is a positive lens, and satisfies the following relationship when a focal length of the third lens is set as f3 and a focal length of the entire wide-angle lens is set as f: 3.000 < f3 / f < 12.500.

An optical system according to an embodiment of the present invention includes: a first lens to a fifth lens, which are arranged along the optical axis from an object toward a sensing unit; and an optical filter disposed in any one of the regions between the second lens and the fifth lens. The first lens has a meniscus shape convex toward the object on the optical axis. The object-side surface of the third lens has a concave shape on the optical axis. The radius of curvature of the object-side surface of the first lens on the optical axis is L1R1. The radius of curvature of the sensor-side surface of the first lens on the optical axis is L1R2. The mathematical expression 1 < L1R1 / L1R2 < 5 is satisfied.

A wide-angle lens which easily corrects various aberrations and realizes miniaturization. The wide-angle lens of the present invention is composed of a first lens, a second lens, a third lens, a fourth lens, an aperture, a fifth lens, a sixth lens, and a seventh lens which are arranged in this order from the object side, the sixth lens and the seventh lens constitute a cemented lens, the first lens and the second lens are each a negative lens with a concave surface facing the image side, the third lens and the fourth lens are each a positive lens with a convex surface facing the image side, the fifth lens is a positive lens with a convex surface facing the object side and a convex surface facing the image side, the sixth lens is a negative lens with a concave surface facing the image side, the seventh lens is a positive lens with a convex surface facing the object side and a convex surface facing the image side, and when the combined focal length of the first lens, the second lens, the third lens, and the fourth lens is set as f1234 and the combined focal length of the fifth lens, the sixth lens, and the seventh lens is set as f567, the following relationship is satisfied: 0.800 < f1234 / f567 < 3.000.

This invention relates to the field of optical lenses, and discloses a camera optical lens comprising seven lenses, arranged sequentially from the object side to the image side as follows: a first lens with positive refractive power, a second lens with negative refractive power, a third lens with positive refractive power, a fourth lens with negative refractive power, a fifth lens with positive refractive power, a sixth lens with positive refractive power, and a seventh lens with negative refractive power; wherein the focal length of the camera optical lens is f, the focal length of the first lens is f1, the central radius of curvature of the object side of the fifth lens is R9, the central radius of curvature of the image side of the fifth lens is R10, the axial thickness of the fourth lens is d7, and the axial distance from the image side of the fourth lens to the object side of the fifth lens is d8, and satisfies the following relationships: 1.00≤f1 / f≤2.00; 5.00≤d7 / d8≤10.00; 2.00≤R9 / R10≤8.00. This camera lens not only boasts excellent optical performance but also meets the design requirements of large aperture, wide-angle, and ultra-thin design.

Disclosed are electroluminescent display devices and light emitting devices that include a blue light emitting layer. The electroluminescent display devices and the light emitting devices include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer that includes a plurality of nanostructures that do not include cadmium. Upon application of a bias, the blue light emitting layer is configured to emit light having an emission peak wavelength (λ 最大 ) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a change in bias from a first voltage to a second voltage that is at least about 5 volts greater than the first voltage, the emission peak wavelength (λ 最大 ) of the blue light emitting layer can exhibit a first emission peak wavelength that is less than the emission peak wavelength at the first voltage and the emission peak wavelength at the second voltage, and a change width of the emission peak wavelength (λ 最大 ) during the change in bias is less than or equal to about 4 nanometers.

The present application relates to a kind of hydrogen sulfide donors based on isothiocyanate structure and its preparation method and application, belong to biochemical technical field.The chemical structure formula of the hydrogen sulfide donor is as shown below.The hydrogen sulfide donor described in the present application is with tricyano furan as fluorescent mother nucleus, is constructed by converting its amino into strong electron-withdrawing isothiocyanate group, it can specifically recognize cysteine and release hydrogen sulfide, while accompanied by significant fluorescence enhancement, realize the visual monitoring of release process, solve the existing hydrogen sulfide donor release uncontrollable, single function and the technical problem that release process is difficult to real-time monitoring, it has important significance in the visual tracing of hydrogen sulfide release and the diagnosis and treatment research of related diseases.

The invention discloses a method for improving characteristics of an optical thin film through doping, and belongs to the technical field of thin film preparation. According to the method, based on a magnetron sputtering process, zinc oxide is taken as a target material, nitrogen is taken as a doping source, a coating-argon ion bombardment circulation technology is adopted in a coating process, a film layer with weak binding force is periodically removed, and layer-by-layer densification growth of a film is realized. And after deposition is completed, high-temperature annealing treatment is performed on the film under nitrogen protection, so that internal stress is effectively eliminated, and uniform doping and ordered distribution of nitrogen atoms in ZnO crystal lattices are promoted. Through the synergistic effect of bombardment-deposition circulation and atmosphere annealing, the crystallization quality, the structural stability and the interface bonding strength of the nitrogen-doped ZnO thin film are remarkably improved, and particularly, the fluorescence characteristic is remarkably enhanced. The method is controllable in process, good in repeatability and suitable for various substrates, and an effective way is provided for preparation of high-performance optoelectronic devices.

This invention relates to the field of optical lenses and discloses a camera optical lens comprising seven lenses, arranged sequentially from the object side to the image side as follows: a first lens with positive refractive power, a second lens with negative refractive power, a third lens with positive refractive power, a fourth lens with refractive power, a fifth lens with positive refractive power, a sixth lens with negative refractive power, and a seventh lens with negative refractive power; wherein the focal length of the camera optical lens is f, the focal length of the fourth lens is f4, the central radius of curvature of the object side of the second lens is R3, the central radius of curvature of the image side of the second lens is R4, the axial thickness of the third lens is d5, and the axial distance from the image side of the third lens to the object side of the fourth lens is d6, and satisfies the following relationships: -10.00≤f4 / f≤10.00; 4.00≤d5 / d6≤8.00; 2.00≤(R3+R4) / (R3-R4)≤10.00. This camera lens not only boasts excellent optical performance but also meets the design requirements of large aperture, wide-angle, and ultra-thin design.

The lighting device disclosed in the embodiment includes: a substrate; a light source portion disposed on the substrate; a resin layer disposed on the substrate and covering the light source portion; a light-shielding layer disposed on the resin layer and having an opening; and an optical layer disposed on the light-shielding layer, wherein the light source portion includes a plurality of first light sources disposed in a first region of the resin layer and a plurality of second light sources disposed in a second region of the resin layer, wherein the resin layer includes a groove disposed between the first region and the second region.

The invention belongs to the field of semiconductor materials, and particularly discloses a low-pixel crosstalk photoelectric detector and a preparation method thereof, and the photoelectric detector comprises an IC substrate, an insulating layer, a metal layer, a hole transport layer, a quantum dot layer, a nanocrystalline protection layer, an electron transport layer and a second electrode layer. The insulating layer is located on the upper surface of the IC substrate, a hole obtained through photoetching extends into the IC substrate from the insulating layer, a tungsten column of the IC substrate is exposed, a Ti layer, an Au layer, a hole transport layer, a quantum dot layer, a nanocrystalline protection layer and an electron transport layer are sequentially arranged in the hole from bottom to top, one part of the electron transport layer is located above the hole, and the other part of the electron transport layer is located above the hole. And the second electrode layer is positioned on the surface formed by the electron transfer layer and the insulating layer. The whole photoelectric detector provided by the invention has the performance advantages of low dark current, high responsivity, excellent optical property and low pixel crosstalk.

This invention relates to the field of optical lenses and discloses a camera optical lens comprising seven lenses, arranged sequentially from the object side to the image side as follows: a first lens with positive refractive power, a second lens with negative refractive power, a third lens with positive refractive power, a fourth lens with refractive power, a fifth lens with positive refractive power, a sixth lens with negative refractive power, and a seventh lens with negative refractive power; wherein the focal length of the camera optical lens is f, the focal length of the fourth lens is f4, the central radius of curvature of the object side of the second lens is R3, the central radius of curvature of the image side of the second lens is R4, the axial thickness of the first lens is d1, and the axial distance from the image side of the first lens to the object side of the second lens is d2, satisfying the following relationships: -10.00≤f4 / f≤10.00; 1.00≤d1 / d2≤3.00; 2.00≤(R3+R4) / (R3-R4)≤7.00. This camera lens not only boasts excellent optical performance but also meets the design requirements of large aperture, wide-angle, and ultra-thin design.