51 results about "Atomic beam" patented technology

The invention provides a neutral atom beam generation device and a neutral atom detector calibration device. The neutral atom beam generation device comprises an ion beam generation device used for emitting a mixed beam; the particle energy testing device comprises an incident end, a first emergent end, a second emergent end and an acquisition device, the incident end is used for receiving the mixed beam; the incident end is communicated with the second emergent end through an arc-shaped channel, and a deflection magnetic field is arranged at the arc-shaped channel, so that positive ions in the mixed beam flow deflect and bombard the acquisition device; the acquisition device is used for acquiring a first bombardment position of positive ions; the first emergent end is used for emitting a first ion beam; the processing device is connected with the collecting device and used for determining the deflection radius of the positive ions according to the first bombardment position and determining the energy of the positive ions and the neutral atoms according to the deflection radius; and the particle screening device is used for absorbing positive ions and negative ions in the first ion beam so as to emit a neutral atom beam.

The invention belongs to the technical field of cold atom beam preparation equipment, and discloses a cold atom beam generation device capable of rapidly replacing an atom source, and the device comprises a vacuum optical cavity which is a hollow cavity and is provided with at least one connection port; the atomic source module is arranged in the vacuum optical cavity and is detachably connected with the connecting port of the vacuum optical cavity; and the port function module is detachably and hermetically connected with the connecting port of the vacuum optical cavity. Through modular structures of the differential flange, the electrode flange, the rotating wheel base and the like, when the atom source is used up, a user does not need to depend on an original equipment factory for disassembly like a traditional scheme, but can operate by himself / herself, and only needs to disassemble and replace the atom source module at a port of the electrode flange, so that the maintenance mode that professionals need to intervene is changed, and the maintenance efficiency is improved. And the convenience of equipment maintenance is improved, the downtime of the system is reduced from several days or even several weeks required by a traditional scheme, and the service continuity and the operation efficiency of the equipment are also improved.

This application provides an inertial measurement method and system based on atomic interferometry. The method includes: controlling a first atomic beam and a second atomic beam to exit into an interference region, and sequentially interacting with three pulse beams in the interference region to detect the corresponding momentum transfer probability signals. The exit directions of the first and second atomic beams intersect and are symmetrical about the quantization axis. The effective pulse vector directions of the three pulse beams are adjusted so that the adjusted effective pulse vector directions are opposite to those of the original three pulse beams. The first and second atomic beams are then controlled to exit into the interference region, and sequentially interact with the adjusted three pulse beams in the interference region to detect the corresponding momentum transfer probability signals. Based on the four momentum transfer probability signals, the inertial measurement result is determined. Thus, by reversing the effective pulse vector direction, the interference area is reversed, effectively suppressing noise and drift terms unrelated to the effective pulse vector direction.

Some embodiments of the present disclosure provide atom beam interferometry. MTL beams are directed to respective MTL regions along a 3D-cooled atom beam. Within each MTL region, the respective MTL beam coherently imparts photon recoil momenta to atoms of the atom beam to produce an interference signal in the atom beam. The MTL beams are switched between first and second cases providing first and second interfering trajectory paths for the atom beam, and the atom beam is continuously directed through the MTL regions while switching the MTL beams. Atoms from the atom beam are received along the first and second interfering trajectory paths at a detection region. State-dependent responses from the atoms of the atom beam are induced in the detection region to provide data of atomic states occupied by the atoms. The data of the atomic states is translated into an interferometry measurement. Related interferometers are also disclosed.

This invention relates to a real-time calibration and stabilization system for a dual-modal controlled atomic beam gyroscope, characterized by: a rubidium source cavity outlet end sealed to a capillary cavity inlet end, and a capillary cavity outlet end sealed to a two-dimensional cooling cavity inlet end; a capillary assembly front end connected to an angle control unit, and a rear end supported at the capillary cavity outlet end, connected to a flux control unit located at the rear; the angle control unit is used to realize automatic displacement adjustment of the capillary assembly in the X and Y directions, achieving geometrical alignment of the emitted atomic beam with the vacuum chamber; two-dimensional cooling light irradiates the two-dimensional cooling cavity; a photoelectric detection unit is used to measure the atomic beam passing through the two-dimensional cooling cavity in the X and Y directions; a data processing and control unit is used to perform differential calculations and logical judgments on the X and Y direction measurement signals respectively, and generate corresponding control signals to drive the angle control unit and flux control unit, controlling the spatial position and flux stability of the beam atoms.

The invention relates to a three-dimensional cooling atomic beam preparation device and method. The three-dimensional cooling atomic beam preparation device is characterized in that the emergent end of an atomic gas chamber is connected with the incident end of an atomic collimator; the emergent end of the atom collimator is connected with the incident end of the cooling cavity, the emergent end of the cooling cavity is connected with the incident end of the detection cavity through a pipeline, and the pipeline is connected with a vacuum pump; the three-dimensional cooling laser pair acts on the cooling cavity, and the upper detection laser and the lower detection laser oppositely act on the detection cavity up and down; the cut-off laser acts on the rear end of the cooling cavity; the atomic gas chamber is used for generating hot atoms; the atom collimator is used for forming a hot atom beam and enabling the hot atom beam to enter the cooling cavity; the cooling cavity forms a cold atom beam under the combined action of the three-dimensional cooling laser pair and enables the cold atom beam to enter the detection cavity; the two detection lasers enable an electric signal of the cold atom beam to form a fluorescence signal to be output; and the fluorescence collection device is used for collecting fluorescence signals and inputting the fluorescence signals into the computer for processing to obtain information such as three-dimensional temperature, flux, speed and speed distribution of the cold atom beam. According to the invention, high-flux and three-dimensional low-temperature atomic beam output is realized at the same time.

The application provides a kind of laser pumped cesium atomic beam clock parameter adaptive setting device and method, relating to atomic clock technical field, including cesium beam tube unit;Cesium beam tube drive unit;Frequency stabilization laser light source unit;Acoustooptic frequency shift unit;Crystal oscillator lock frequency unit;Temperature acquisition and control unit;Wherein, main control unit is connected each controlled module by communication interface, and in-machine computer runs host computer software: calculate relative frequency deviation and allan variance, obtain frequency deviation sequence and allan variance data set;Determine the optimal working parameter combination corresponding to peak value;Linkage executes primary temperature control, secondary temperature control and tertiary temperature control, realizes temperature gradient compression and wavelength stability control;Compare real-time monitoring parameters with preset threshold, determine alarm level, thereby trigger system response instruction.The beneficial effects of the application are to reduce labor cost, improve temperature adaptability and improve long-term stability index.

The application relates to a cold atom beam preparation device and a preparation method. The cold atom beam preparation device comprises a vacuum chamber, a magnetic field element arranged outside the vacuum chamber, a transverse cooling module and a longitudinal cooling module. The transverse cooling module is used for injecting two pairs of first lasers and two pairs of second lasers into the vacuum chamber. The longitudinal cooling module is used for injecting two pairs of moving optical glue lasers into the vacuum chamber. Each pair of moving optical glue lasers is emitted along a direction which forms an angle with a third direction and a transverse plane. The third direction is the emission direction of the atom beam, the transverse plane is perpendicular to the third direction, and the light path direction of the first laser, the light path direction of the second laser and the third direction are perpendicular to each other. The cold atom beam preparation device has a simple structure, realizes transverse cooling of the atom beam and longitudinal cooling of the atom beam, generates longitudinal velocity of the atom vapor and controls the longitudinal velocity of the atom beam, and obtains a cold atom beam which has low three-dimensional cooling temperature and controllable longitudinal velocity.

The invention discloses a method for preparing a palladium ditelluride single crystal film by using a molecular beam epitaxy method, and belongs to the technical field of nano material preparation. Comprising the following steps: ultrasonically cleaning a silicon carbide substrate, putting the silicon carbide substrate into a growth cavity, and performing annealing treatment to remove impurities adsorbed on the surface of the substrate; performing flash processing on the annealed silicon carbide substrate for multiple times in a mode of increasing and reducing current to obtain a double-layer graphene surface, and then reducing the temperature of the substrate to a growth temperature; pd and Te are placed in different evaporation sources to be heated, the atomic beam flow rate ratio of Pd to Te is adjusted by controlling the evaporation temperature during growth, Pd and Te grow on a substrate in a co-deposition mode, and baffles of the Pd source and the Te source are opened at the same time; and after the growth is completed, closing the Pd source baffle plate and the Te source baffle plate, and annealing the substrate. According to the method, the preparation conditions of the thin film can be accurately regulated and controlled, so that the controllable growth of the thin film material is achieved.

The application provides a low-temperature bonding method for reducing surface damage and a bonded wafer, and relates to the technical field of wafer bonding. In a high-vacuum environment, the bonding surfaces of a first wafer and a second wafer to be bonded are subjected to first irradiation treatment by using a first atomic beam, so that a first activated layer is obtained; the bonding surfaces after the first irradiation treatment in step S1 are subjected to at least one second irradiation treatment by using a second atomic beam, so that a second activated layer is obtained; and pressure bonding is performed, so that a bonded wafer is obtained. The low-temperature bonding method for reducing surface damage adopts gradient-activated bonding surfaces, can reduce the damage to the wafer surface caused by single activation, reduce the surface roughness, thereby reducing the probability of the occurrence of air bubbles after bonding, and improving the bonding strength.

Influences of an environmental magnetic field on an atom wave interferometer is to be suppressed. An atom wave interferometer includes an atomic beam source, a first Raman light generation unit, a second Raman light generation unit, a third Raman light generation unit, and a detector. The atomic beam source emits atoms with zero nuclear spin in a first metastable state. The first Raman light splits the first metastable state into the first and a second metastable state. The second Raman light inverts the first metastable state and the second metastable state. The third Raman light splits the first metastable state into the first and the second metastable state and splits the second metastable state into the first and the second metastable state. The detector detects a result of superposing the atoms in the two second metastable states split by the third Raman light.

The invention provides a low-resistivity film, a preparation method thereof and a super-atom beam auxiliary coating device. The preparation method comprises the following steps: providing a substrate; and bombarding the deposition surface of the substrate by using a super-atom beam in the process of depositing and forming the film on the surface of the substrate by sputtering a target material through an ion beam until the deposition of the film is finished. According to the method, the thin film deposition surface of the substrate is bombarded by the super-atomic beam in the deposition process, the energy of atoms on the deposition surface of the substrate can be increased by the super-atomic beam, so that the atoms are easily subjected to surface diffusion towards crystal grains with low-energy surfaces, and the low-resistivity thin film of which the crystal grain orientation is approximately consistent can be formed; in the process, the damage to the film layer can be avoided, and the compactness of the film is also improved.

The invention relates to an atomic beam collimation emitter with long service life. The atomic beam collimation emitter comprises a metal source, an emission part, a temperature control part and a recovery part, the atoms released by the metal source form a high-collimation-degree atom beam through the capillary tube array of the emission part and the atom adsorber, the adsorbed atoms can be effectively released through heating by controlling the temperature of the atom adsorber, the adsorption capacity of the atom adsorber is recovered, meanwhile, the atoms are recovered to the metal source through the recovery tube, and the metal source is recovered. And the service life of the atomic beam collimation emitter is effectively prolonged.

The application belongs to the technical field of cold atom beam preparation equipment, and discloses a cold atom beam generating device capable of quickly replacing an atom source, which comprises a vacuum optical cavity, which is a hollow cavity and is provided with at least one connecting port; an atom source module, which is arranged in the vacuum optical cavity and is detachably connected with the connecting port of the vacuum optical cavity; and a port function module, which is detachably and sealingly connected with the connecting port of the vacuum optical cavity. Through modular structures such as a differential flange, an electrode flange and a rotating wheel base, when the atom source is exhausted, the user does not need to rely on the original equipment manufacturer to disassemble, but can operate by himself / herself, only needs to disassemble and replace the atom source module at the electrode flange port, changes the maintenance mode that must be intervened by professional personnel, improves the convenience of equipment maintenance, reduces the system downtime from several days or even several weeks required by the traditional scheme, and improves the service continuity and operation efficiency of the equipment.

The invention discloses a germanium-silicon bonding type photoelectric device and a preparation method, the photoelectric device at least comprises a germanium-silicon bonding substrate, the germanium-silicon bonding substrate is formed by bombarding a germanium substrate and a silicon substrate by using a non-metal fast atomic beam at a first set pressure and a first set temperature, the surface of the germanium-silicon bonding substrate is activated, and the bonding capability is enhanced; the photoelectric device structurally comprises a germanium-silicon bonding type PIN detector, and the germanium-silicon bonding type PIN detector structurally comprises but is not limited to a germanium-silicon bonding substrate, an active region electrode, a first back electrode and a first passivation contact layer; the photoelectric device further comprises a germanium-silicon bonding type silicon drift detector, and the germanium-silicon bonding type silicon drift detector structurally comprises but is not limited to a germanium-silicon bonding substrate, a drift electrode, a collector electrode, a second back electrode and a second passivation contact layer. Compared with a traditional PIN detector with a silicon substrate or a germanium substrate and a silicon drift detector, the photoelectric device combines high energy resolution and scattering capability of germanium with low noise and high detection efficiency of silicon so as to realize better detection performance.

This application belongs to the field of thin film preparation, specifically disclosing a magnetron sputtering apparatus, a thin film preparation method, and a PZT thin film. The magnetron sputtering apparatus includes: a target material disposed directly above a substrate, used to sputter and generate an atomic beam with momentum under the action of incident particles; at least a portion of the atoms in the atomic beam are deposited on the substrate to form a thin film; and a shielding member used to shield the atomic beam generated by sputtering in a predetermined area at the center of the target material, and to deflect and scatter the atomic beam generated by sputtering around the predetermined area; when the magnetron sputtering apparatus sputters the substrate, the shielding member is sequentially disposed at a first station and a second station, the first station being located outside the trajectory of at least a portion of the atomic deposition, and the second station being located between the target material and the substrate, shielding a portion of the trajectory of at least a portion of the atomic deposition. This application improves the uniformity of the thin film sputtered by the magnetron sputtering apparatus.

The application provides a neutral atom beam generating device and a neutral atom detector calibration device. The neutral atom beam generating device comprises: an ion beam generating device for emitting a mixed beam; a particle energy testing device comprising an incident end, a first exit end, a second exit end and a collection device; the incident end is used for receiving the mixed beam; the incident end and the second exit end are communicated through an arc-shaped channel, and a deflection magnetic field is arranged at the arc-shaped channel to deflect positive ions in the mixed beam and hit the collection device; the collection device is used for obtaining a first hitting position of the positive ions; the first exit end is used for emitting a first ion beam; a processing device connected with the collection device is used for determining a deflection radius of the positive ions according to the first hitting position, and determining the energy of the positive ions and neutral atoms according to the deflection radius; and a particle screening device is used for absorbing the positive ions and negative ions in the first ion beam to emit a neutral atom beam.

The utility model relates to the technical field of semiconductor material processing equipment, and particularly discloses a magnetic confinement detection device. The device comprises a receiving cup, a grounding shielding plate, at least one insulating part, an emission source and two magnets, the receiving cup is provided with a cylindrical accommodating cavity; a first hole penetrates through the grounding shielding plate and is communicated with the accommodating cavity; the insulating part is clamped between the receiving cup and the grounding shielding plate; the two magnets are symmetrically arranged on the two sides of the receiving cup at intervals with respect to the axis of the containing cavity, and the magnetizing directions of the two magnets are the same. The emission source is used for emitting a to-be-measured beam along the axis of the accommodating cavity, so that the to-be-measured beam passes through the first hole and then impacts the cavity bottom of the accommodating cavity. According to the device, the to-be-tested super-atom beam is magnetically constrained, so that the to-be-tested beam is effectively received and tested, the phenomenon that secondary electrons escape from the receiving cup due to collision of the super-atom beam is reduced, the measurement deviation caused by secondary electron escape is reduced, and the accuracy of a test path of the to-be-tested beam is ensured.

The application relates to the technical field of molecular beam epitaxy equipment, in particular to a long-neck vertical crucible, a source furnace and a molecular beam epitaxy equipment, which comprises a vertical crucible body and a diffusion neck integrally formed with the vertical crucible body, the inside of the vertical crucible body is provided with a charging cavity, the top end of the charging cavity is provided with a narrow mouth, the diffusion neck is provided with a diffusion channel, the feeding end of the diffusion channel is communicated with the narrow mouth, and the diffusion neck is arranged at an angle with the vertical crucible body. The application can keep the liquid surface area of raw materials constant, make the beam intensity of a molecular beam or an atomic beam long-term stable and not attenuate, eliminate the direct view of the liquid surface of the raw materials and the substrate, avoid thermal radiation interference, ensure the uniformity of the substrate temperature, crack and filter large molecular groups or large atomic groups, and significantly reduce the film defect rate, the vertical crucible body is arranged outside a growth cavity, the raw material loading capacity is greatly improved, the maintenance period is prolonged, the beam fluctuation when a baffle is opened is reduced, and the beam uniformity in the time scale is improved.

A sample reservoir (104) containing a sample (118), a nozzle (106), and a heated element (108) are arranged in a vacuum chamber (102). An induction coil (114) is located on the outside of the vacuum chamber (102). The heated element (108) is located around the sample reservoir (104) and the nozzle (106). Electromagnetic power is wirelessly transferred from the induction coil (114) to the heated element (108), whereby the heated element (108) is heated. Heating of the heated element (108) causes the sample reservoir (104) and the nozzle (106) to be heated, whereby the sample (118) in the sample reservoir (104) is heated. An atomic beam generated by the heating of the sample (118) is emitted from the nozzle (106).

The application discloses a device for rapidly shutting off cold atom loading, comprising a laser light source, laser light emitted by the laser light source sequentially passing through an acousto-optic modulator, a collimating lens and a first reflector to serve as forward incident laser light input into a control cavity, the forward incident laser light sequentially passing through a light transmission opening in the center of a first light transmission surface and a light transmission opening in the center of a second light transmission surface on the control cavity and being reflected by a second reflector outside the control cavity. The application also discloses a method for rapidly shutting off cold atom loading, which is used for real-time and accurate control of atom beam loading according to different atom loading requirements. The application can compress the divergence angle to enhance the atom beam flow intensity, improve the atom loading number, and make the near-resonance laser interact with the atom beam flow at a specific angle by slightly adjusting the angles of two reflectors to realize the shutting off of the atom loading. The application can also control the light field intensity and detuning by selecting an external control signal of the acousto-optic modulator to continuously and quantitatively control the atom loading.

The utility model belongs to the technical field of semiconductor processing, and discloses a super-atom beam source magnetic screening device. The super-atom beam source magnetic screening device comprises a shell and a cylindrical part located in the shell, the cylindrical part is provided with an internal channel, and a magnetic field gradually enhanced from the center area of the channel to the edge of the channel is formed in the internal channel by arranging the shell and the cylindrical part and arranging a magnetic array between the shell and the cylindrical part. Monatomic ions in the ionized beam source can be screened out by using an internal channel of the cylindrical piece; specifically, after an ionized beam source enters an internal channel, under the action of a magnetic field, the super-atomic ions penetrate through the internal channel, and the monatomic ions disappear after deviating from the center of the internal channel and hitting on the wall surface of the internal channel or disappear after deviating from the center of the channel and ejecting out of the internal channel, so that the monatomic ions are screened out and retained, and the proportion of the super-atomic ions is increased. And the process effect is effectively improved.

An exemplary embodiment of the present disclosure provides a chip-scale atomic beam system comprising an atomic vapor source, a plurality of channels, and a propagation chamber. The atomic vapor source chamber can comprise an atomic vapor source configured to emit an atomic vapor. The plurality of channels can have first ends and second ends. The first ends can be in fluid communication with the atomic vapor source chamber. The plurality of channels can be configured to collimate the atomic vapor as it moves through the plurality of channels from the first ends to the second ends. The propagation chamber can be in fluid communication with the second ends of the plurality of channels. The propagation chamber can have an internal pressure less than an internal pressure of the atomic vapor source chamber to enable the collimated atomic vapor to propagate through the propagation chamber.

A loading assembly for providing atomic objects to a confinement apparatus is provided. The loading assembly includes an oven configured to generate an atomic flux of an atomic species / isotope having a non-zero nuclear spin. The loading assembly includes mirror and magnet arrays configured to, when optical beams are provided to the arrays, generate a two-dimensional magneto-optical trap (2D MOT) with a simplified repumping scheme. The 2D MOT is configured to generate a substantially collimated atomic beam from the oven generated atomic flux.

The adjusting device (500) sets M to a predetermined integer satisfying 3 ≤ M, and simultaneously irradiates the atomic beam (131) with M lasers. The respective traveling paths of the M lasers intersect the traveling path of the atomic beam (131). The component in the direction perpendicular to the traveling path of the atomic beam of the sum of the respective radiation pressure vectors of the M lasers is zero. The component in the direction of the traveling path of the atomic beam of the sum of the respective radiation pressure vectors of the M lasers is negative with respect to an atom having a speed greater than a prescribed speed, and is positive with respect to the atom having a speed smaller than the prescribed speed.

An atom beam generation device (100) comprises an atomic oven (102) including a reservoir (106) in which a sample (114) is contained, a deceleration unit (104), and coil units (110, 124). The deceleration unit (104) includes a bore (122) through which an atomic beam and a slowing laser beam (128) pass, and decelerates an atomic beam emitted from the atomic oven (102) by means of slowing laser beam and a magnetic field. The coil units (110, 124) supply Joule heat to the atomic oven (102), and generate a magnetic field in the deceleration unit (104).

The utility model discloses a magnetic screening module and a super-atom beam source screening device, and relates to the technical field of semiconductor material surface treatment. The magnetic screening module comprises an even number of magnets, the even number of magnets are evenly distributed in the circumferential direction to form an annular magnetic array, in the annular magnetic array, every two opposite magnets form magnetic pairs with the same magnetizing direction, the included angle of the magnetizing directions of every two adjacent magnetic pairs is 360 degrees / n, n is the number of the magnetic pairs and is larger than or equal to 2, and n is larger than or equal to 2. And an area with the lowest synthetic magnetic field intensity is formed in the center of the annular magnetic array. When the super-atomic beam source penetrates through the central axis of the annular magnetic array, the deflection radius of the super-atomic ions with the large mass is large, the super-atomic ions cannot deflect in a magnetic field generated by the annular magnetic array and can smoothly penetrate through the magnetic screening module, and the single-atomic ions with the small mass can deflect in the magnetic field generated by the annular magnetic array and can smoothly penetrate through the magnetic screening module. Therefore, screening of monatomic ions is realized.

The adjusting device (500) sets M to a predetermined integer satisfying 3 ≤ M, and simultaneously irradiates the atomic beam (131) with M lasers. The respective traveling paths of the M lasers cross the entry path of the atomic beam (131). The component in the direction perpendicular to the entry path of the atomic beam of the sum of the respective radiation pressure vectors of the M lasers is nonzero. The component in the direction of the entry path of the atomic beam of the sum of the respective radiation pressure vectors of the M lasers is negative with respect to an atom having a speed greater than a prescribed speed and is positive with respect to the atom having a speed less than the prescribed speed.

This invention belongs to the field of cold atom two-dimensional magneto-optical trap technology and discloses a highly integrated miniaturized cold atom two-dimensional magneto-optical trap module, including an atomic beam cavity, and further including: an assembly connecting plate, on which a first mounting area, a second mounting area, and a third mounting area are sequentially arranged along the center outward direction; and a coaxial locking component, which locks the assembly connecting plate, the magnetic field coil module, and the cooling optical module to a fixed relative position. This invention achieves spatial nesting of the magnetic field and optics by radially and coaxially integrating the atomic beam cavity, the magnetic field coil module, and the cooling optical module, forming an integrated module with a volume much smaller than traditional discrete structures. Simultaneously, the coaxial locking component presses and maintains the coaxiality of each functional module along the axial direction. During use, installation can be completed simply by docking with an external vacuum cavity, inserting optical fibers, and connecting plug-in terminals, eliminating the need for on-site debugging of the optical path and magnetic field position, greatly simplifying the assembly and adjustment process.