206 results about "Atomic beam" patented technology

There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.

This invention relates to a method and device for generating cold atomic beam. Said method includes heating hot atom source in vacuum chamber to form atomic saturated vapor pressure atmosphere, cooling hot atom by three-D MOT to below 200uk and trapped to form cold atomic cloud, by the quarter wave plate reflection mirror in MOT the laser radiation pressure being unbalanced to make cold atom emitting along said direction, four tape arranged straight line set with contrary current direction is set in atom beam emission direction, which makes the atom emitted to forward to obtain cold atom beam with low speed, large flux and small transverse speed, laser beam vertical with atom beam set in the direction of cold atom emitting for atom beam state preparation to realize state concordant emitted cold atom beam.

SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate 1 is rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas. The surface of the SiC substrate 1 is then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid. A small amount of silicon oxide film formed on the surface of the SiC substrate 1 is etched so as to form a clean SiC surface 3 on the substrate surface. The SiC substrate 1 is then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10⁻⁶ to 10⁻⁸ Pa). In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beam 5 at time t1 at temperature of 800° C. or lower and performing a heating treatment at 800° C. or higher is repeated at least once. The temperature is then set to the growth temperature of an AlN film, and the SiC substrate surface 3 is initially irradiated with —Al atoms 8a in ultrahigh vacuum state, followed by the feeding of N atoms 8b.

The invention relates to a method for generating the atom bean used in atom chip and relative device, wherein, the device comprises a vacuum room, an atom source, a two-dimensional micro adjusting platform, a magnetic iron and inner and outer light paths. The inner and outer light paths comprise a main laser and a re-pump laser; the vacuum room is mounted with a 1/4 wave plate reflector group with a hole in center and a direct-guide group; the magnetic light well uses the optical pump laser and the re-pump laser to prepare the atom into optimized weak field scanning state. The invention has small volume and simple structure, while it can supply the optimized weak field scanning state to the atom chip with the atom beam whose longitudinal speed is lower and uniform, transverse speed is nearly zero and density is high. The invention can be used in the guide, wave-division, interference and the Bose-Einstein Coagulation (BEC).

A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion.

An atomic beam tube for frequency standard which employs either counter propagating optical beams or counter propagating atomic beams and Coherent Population Trapping (CPT) is disclosed. Atoms selected from the group consisting of the alkali metal family (Cesium, Rubidium, Potassium, Sodium and Lithium) are emitted from one or two sources to form a single or double atomic beams. The atoms interact with the optical beams at two crossing points. The optical beams are generated by a laser and are modulated at half the hyperfine frequency. The optical beam is splitted into two counter propagating beams in round paths which interact with the atomic beam at two interaction regions. The interaction with the light causes the atoms to enter a CPT state. A dark line in the fluorescence at the second crossing is used to lock an RF oscillator to the atomic hyperfine transition.

The invention discloses a method for preparing a supported nanometer gold catalyst by laser deposition, which comprises the following steps: hanging and fixing metal Au on the middle part of a laser deposition pond; putting a carrier in the laser deposition pond at a position closer to the bottom than the metal Au; heating the carrier to 25-600 DEG C and stirring the carrier so as to ensure that the carrier is in a moving state; under a vacuum condition and the protection of inert gas, focusing pulsed laser onto the surface of the metal Au by a laser so as to excite Au atoms into an atomic beam which is directionally and uniformly deposited on the surface of the carrier; and obtaining the supported nanometer gold catalyst. The preparation method has simple operation and no environmental pollution, and the prepared supported nanometer gold catalyst has higher catalytic activity, selectivity and stability. The supported nanometer gold catalyst can be applied to the fields of fuel-cell catalysts, carbon monoxide oxidation catalysts, catalytic hydrogenation catalysts, catalytic reforming catalysts, and the like and has greater implementation values and important social and economic benefits.

In a method of manufacturing an LCD device, an atomic beam is irradiated onto a thin film including a carbon-carbon double bond to form a polarized functional group by transforming the carbon-carbon double bond into a carbon-carbon single bond and a radical state. Then, a polarity preserving material is combined with the polarized functional group so as to preserve a polarity of the polarized functional group. According to the present invention, the alignment film is formed on the thin film transistor unit cell and on the color filter unit cell by a non-contact method. Therefore, time of forming the alignment film is reduced and alignment of the liquid crystal molecules is improved.

A magnetic recording disk having on its surface a texture structure of fine surface irregularities with reduced variations, which is suitable for high-density magnetic recording, and a method of manufacturing such a magnetic recording disk are provided. The magnetic recording disk has a substrate 11, 12 (16) coated on a surface thereof with a magnetic layer 13, a carbon layer 14, and a lubricating film 15. The substrate has on a surface thereof a texture structure of fine surface irregularities for reducing friction when the substrate is brought into contact with a head and controlling an amount of lift of the head. The fine surface irregularities have a height of 20 nm or less and are formed from a pattern shape or profile of a shield with a high-speed atomic beam emitted from a high-speed atomic beam source.

The invention discloses an optical-pumping small caesium clock based on modulation transfer spectrum frequency stabilizing laser. Narrow-linewidth laser of modulation transfer spectrum frequency stabilization of high frequency stabilization degree serves as pumping laser and detection laser. A narrow linewidth laser, first to fifth half-wave plates, first to fifth polarization splitting prisms, aphase modulator, a caesium atom bubble with a magnetic shielding and heating thermal insulation material, a high-speed photoelectric detector, a laser phase demodulation and high speed servo control circuit, a laser driving power supply, an acousto-optic modulator, a atomic beam tube, a fluorescence detector, a microwave signal source, and a clock phase demodulation and servo control circuit are included. According to the provided high-performance optical pumping small caesium clock, the transition spectral line signal to noise ratio and frequency stabilization degree of the clock can be obviously enhanced, and influence of light frequency shift is reduced.

The invention relates to a method for enabling repair of a defect in a substrate, particularly the invention provides a method and apparatus for enabling repair of a pattern shape in a semiconductor device, which has not been able to be practiced because of lack of a suitable method, and further provides a method for manufacturing the semiconductor device using those. A method for repairing the pattern shape of a substrate having an imperfect pattern is used, which includes (a) a step for inspecting the substrate and thus detecting the imperfect pattern, and (b) a step for repairing the pattern shape by performing etching or deposition to the detected imperfect-pattern using radiation rays. Moreover, apparatus for repairing a pattern shape of a via-hole in a wafer having an imperfect via-hole is used, which has a defect inspection section for detecting the imperfect via-hole, and an etching section for etching the imperfect via-hole using a fast atom beam.

The invention discloses an integrated atom beam type optical frequency standard comprising an electrical cabinet and an optical cabinet. The electrical cabinet consisting of a control device, a measurement device, and a display device provides power for all devices of the optical cabinet and outputs a control signal and a frequency locking signal to the optical cabinet. The optical cabinet including an atomic beam tube, a laser device and an ultra-stable laser system outputs an ultra-stable resonant cavity signal and an atomic spectrum signal to the electrical cabinet; the atomic beam tube isan integrated calcium atom beam sealing tube; and the laser device includes a 423-nm laser device and a 657-nm laser device. On the basis of the optical frequency standard design, problems of many laser devices and complicated system of other optical frequency standard systems are solved; and the provided optical frequency standard is expected to be a first commercial time-keeping optical frequency standard capable of working continuously. The optical frequency standard based on the clear design principle has the high scientificity and engineering achievablility and a leading-edge novel designin the optical frequency standard field is provided.

An atomic clock at optical frequency based on atomic beam and a method for generating the atomic clock comprises: The atomic beam (8) is ejected from a pile mouth after heating an atomic pile (1) in a vacuum chamber (2); A laser (4) corresponding to frequency of a clock transition transfers the atomic beam (8) from a ground state of the clock transition to an excited state of the clock transition in a adiabatic passing mode; After interaction with the laser corresponding to the frequency of a clock transition, the atomic beam (8) passes a signal detection region with a detection laser (5), and after the interaction with the detection laser (5), each of the atoms gives off a photon of spontaneous emission; An emitted fluorescence photon signal from atoms which is excited by the detection laser (5) is explored; A clock laser (4) for exploring transition frequency of an atomic clock is modulated. The signal which is detected performs frequency locking for the frequency of the clock laser which is locked on the clock transition spectrum of the atoms so as to implement the atomic clock.

The invention provides an azotized carbon nano cones and a method for preparing the same. The azotized carbon nano cones comprise beta-C3N4 and graphite phase C3N4 and CNx, wherein x is a positive integer or decimal. The preparation method comprises the following steps of: (1) depositing a 10-100 nanometer metallic intermediate layer on the surface of a smooth substrate material in a vacuum cavity; (2) heating the substrate to the temperature of between 280 and 300 DEG C, and naturally cooling the substrate; (3) placing the substrate obtained by the step(2) on a graphite base in the vacuum cavity, placing an atomic beam source arranged above the graphite base, filling methane/nitrogen mixed gas, of which the volume ratio is one twentieths to one hundred and fiftieths, in the atomic beam source; and (4) keeping the discharge voltage of the atomic beam source between 100 and 300 volts and the air pressure in the atomic beam source between 3 and 100 torr, and obtaining the azotized nano cone, wherein the deposition rate is 0.01 to 0.1 micrometers per minute, and the deposition time is 5 to 45 minutes.

The invention discloses an atomic beam filling processing device, and relates to a workpiece surface processing method. The device comprises a base, a linear motor, an X-axis bearing plate, a Y-axis bearing plate, supports, a beam, a Z-axis bearing plate, a rotating disk, a fixing seat, a servomotor, an atomic beam generator, an atomic beam energy control device and a collimating device, wherein the linear motor is fixed on the base and is fixedly connected with the X-axis bearing plate which is connected with the base; the Y-axis bearing plate is connected with the X-axis bearing plate, and the Z-axis bearing plate is connected with the beam; the supports are fixed at two ends of the base; the beam is connected with the supports; the rotating disk is fixed on the Z-axis bearing plate; the servomotor is fixed on the Z-axis bearing plate; the tail of a rotating shaft of the servomotor is provided with a gear; the atomic beam generator is arranged on the upper part of the atomic beam energy control device; the collimating device is arranged at the bottom of the atomic beam energy control device and is aligned with a workpiece surface defect; the atomic beam energy control device is fixed on the rotating disk through the fixing seat; and an atomic beam filling device is arranged on the Z-axis bearing plate.

The present application provides a method for producing a graphene quantum dot using thermal plasma, comprising injecting a carbon source into a thermal plasma jet to pyrolyze the carbon source so as to form a carbon atomic beam and allowing the carbon atomic beam to flow in a tube connected to an anode to produce a graphene quantum dot. The present application also provides an isolated graphene quantum dot from different types of graphene quantum dots and method for obtaining each of an isolated graphene quantum dot from different types of graphene quantum dots.

The invention discloses a continuous cold-atomic-beam generating device capable of modulating the frequency and the amplitude. The continuous cold-atomic-beam generating device is characterized in that three pairs of cooling laser beams are adopted for resonating with and cooling atoms in a vacuum cavity, and a pair of inverse Helmholtz coils with the exit direction of atomic beams as the axis are additionally arranged to generate capturing force towards the center to the atoms; the three pairs of laser beams are composed of the parallel laser beams generated by three beam expanders respectively and sequentially provided with a 1/2 wave plate, a PBS, a 1/4 wave plate and a lens and the corresponding reflected laser beams obtained through a 1/4 wave plate and a reflecting mirror, wherein the reflected laser beams and incident lasers are same in frequency and opposite in polarization state. A re-pumping laser is coupled into one pair of laser beams to improve the atom use ratio; imbalance laser pressure is formed through a small hole in the center of the 1/4 wave plate and a small hole in the center of the reflecting mirror to leak the atoms, and the continuous cold atomic beams are obtained. Interaction force between the laser beams and the atoms is changed by changing the polarization states of the corresponding laser beams in the exit direction of the atomic beams, the speeds and the flux of the atomic beams are continuous and adjustable, and the frequency and the amplitude of the atomic beams can be modulated.

The invention discloses a calcium atom beam optical clock based on modulation transfer detection between different wavelengths and a preparation method thereof, and provides a modulation transfer detection method between different wavelengths applied to thermal atom beams. The phase modulation of the clock laser is performed based on the scheme of thermal atom beam energy level transfer detection,and the modulation transfer signal is detected and modulated by the detection laser with different wavelengths so that the dispersive clock transition modulation transfer spectrum signal with high signal-to-noise ratio and no Doppler background is obtained directly for frequency locking, thus realizing a small calcium atom beam optical clock with high stability. The advantage of high signal-to-noise ratio of the modulation transfer spectrum frequency stabilization technology can be fully exerted, and the small calcium atom beam optical clock has higher frequency stability than the existing small calcium atom beam optical clock and can break through the bottleneck problems of low signal-to-noise ratio of the transition spectrum line and serious Doppler background of the traditional thermalatom optical frequency atomic clock.

This invention disclosed a high efficiency detection method for alkaline earth ions. Three dye laser wares were activated by a Nd:YAG laser ware, alkaline earth atomic beam was illuminated by two dye laser wares to produce atom samples with different n, l value; ionizate the atom by the third dye laser wares. This invention has high efficiency no matter whether the n value of Rydberg atom was high. It improved the bug of traditional method and could be applied to every kind of alkaline earth atom.

A system for producing a charged particle beam from a photoionized cold atom beam. A vapor of neutral atoms is generated. From these atoms, an atom beam having axial and transverse velocity distributions controlled by the application of laser light is produced. The produced atom beam is spatially compressed along each transverse axis, thus reducing the cross-sectional area of the produced beam and reducing a velocity spread of the produced beam along directions transverse to the beam's direction of propagation. Laser light is directed onto at least a portion of the neutral atoms in the atom beam, thereby producing ions and electrons. An electric field is generated at the location of the produced ions and electrons, thereby producing a beam of ions traveling in a first direction and electrons traveling in substantially the opposite direction. A vacuum chamber contains the atom beam, the ion beam and the electron beam.

In growing single AlN thin films on a semiconductor substrate by rapidly cooling a beam of atomic Al and atomic or molecular N obtained by exciting or decomposing N2 with an electromagnetic wave on the semiconductor substrate, an n-type dopant and a p-type dopant in the form of atomic beams are simultaneously doped in a crystal, so that pairs of an n-type dopant and a p-type dopant are formed in the crystal to synthesize single crystal AlN thin films of low resistivity n-type and low resistivity p-type.

The present invention discloses a method, an apparatus and a system for eliminating the deposit of atoms on a Zeeman cooling window in a strontium atom optical clock. A strontium atom optical clock system is provided with, in a linear order along the direction of the atomic beam, an atomic pile which emits the atomic beam, a magneto-optical trap which confines the atoms and the Zeeman cooling window. In at least one area of the zones from an emission port of the atomic pile to the Zeeman cooling window, excluding the magneto-optical trap, the resonance light of to-be-removed atoms is used to irradiate the motion path of the atoms along a direction at an angle with the motion path of the strontium atom beam so that the atoms cannot reach the Zeeman cooling window. The present invention creates transverse velocity of the atoms through irradiation to prevent the atoms from reaching the Zeeman cooling window, effectively eliminating the deposit of the atoms on the glass of the Zeeman cooling window in an atomic optical clock system and maintaining the high transparency of the window glass.

The invention relates to the technical field of film material preparation, and discloses an ion beam assisted deposition system. A plasma cathode electron gun based on pseudo spark discharge is adopted as the ion beam assisted deposition system; unlike a typical ion beam assisted deposition device, the plasma cathode electron gun has multiple electrode gaps, and therefore electron beams for the hollow cathode ionization process and the subsequent conduction ionization process can be effectively generated; the energy and the beam current density of the electron beams of a hollow cathode phase are controller through different breakdown methods, the iron mass resolution is high enough, and therefore ions of hydrogen atoms and ions of hydrogen molecules can be separated; the ion energy is low and ranges from several eV to several hundred eV; the ion beam current is high enough, and therefore it is guaranteed that the ion beam assisted deposition process can be conducted; the ion beam current is wide, the diameter of the beam current is 10 mm, the hydrogen ion current density is 1 microampere per square centimeter, and therefore a deposition experiment can be conducted on a large-area substrate; mass selection on the ions only depends on an electric field and does not depend on a magnetic field, the structure is compact, and therefore the atomic beam current or active gas molecule ion beam current can be effectively controlled.