697 results about "Direct bonding" patented technology

A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.

A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

A high speed flexible interconnect cable includes a number of conductive layers and a number of dielectric layers. Conductive signal traces, located on the conductive layers, combine with the dielectric layers to form one or more high speed electrical transmission line structures. The transmission line structure may be realized as a grounded coplanar waveguide structure, a microstrip structure, a stripline structure, or the like. The cable can be coupled to destination components using a variety of connection techniques, e.g., direct bonding to a circuit substrate, direct soldering to a flip chip, mechanical attachment to a component, or integration with a circuit substrate. The cable can also be terminated with any number of known or standardized connector packages, e.g., SMA, GPPO, or V connectors.

A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive interface is provided. Also provided are the hybrid substrate produced by the method as well as using the direct bonding method to provide an integrated semiconductor structure in which various CMOS devices are built upon a surface orientation that enhances device performance.

A high speed flexible interconnect cable includes a number of conductive layers and a number of dielectric layers. Conductive signal traces, located on the conductive layers, combine with the dielectric layers to form one or more high speed electrical transmission line structures. The transmission line structure may be realized as a grounded coplanar waveguide structure, a microstrip structure, a stripline structure, or the like. The cable can be coupled to destination components using a variety of connection techniques, e.g., direct bonding to a circuit substrate, direct soldering to a flip chip, mechanical attachment to a component, or integration with a circuit substrate. The cable can also be terminated with any number of known or standardized connector packages, e.g., SMA, GPPO, or V connectors.

This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.

A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.

There are provided a conductive pattern material and a pattern-forming method by which a fine pattern having a high resolution and no wire breakage is obtained. The conductive pattern material is such that on a support surface a pattern-forming layer is formed which allows the formation of a hydrophilic/hydrophobic region directly bonded to the support surface due to energy imparted. Energy is imparted to the pattern-forming material in an imagewise manner to form the conductive material layer.

A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.

Methods of directly bonding a first semiconductor structure to a second semiconductor structure include directly bonding at least one device structure of a first semiconductor structure to at least one device structure of a second semiconductor structure in a conductive material-to-conductive material direct bonding process. In some embodiments, at least one device structure of the first semiconductor structure may be caused to project a distance beyond an adjacent dielectric material on the first semiconductor structure prior to the bonding process. In some embodiments, one or more of the device structures may include a plurality of integral protrusions that extend from a base structure. Bonded semiconductor structures are fabricated using such methods.

A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.

Methods of bonding together semiconductor structures include annealing metal of a feature on a semiconductor structure prior to directly bonding the feature to a metal feature of another semiconductor structure to form a bonded metal structure, and annealing the bonded metal structure after the bonding process. The thermal budget of the first annealing process may be at least as high as a thermal budget of a later annealing process. Additional methods involve forming a void in a metal feature, and annealing the metal feature to expand the metal of the feature into the void. Bonded semiconductor structures and intermediate structures are formed using such methods.

The present invention relates generally to plastic-acceptor hybrid components and, more particularly, to the direct bonding of over-moulded plastics to an acceptor insert, such as a metal, in an injection moulding tool. A method and apparatus are provided allowing the production of the present plastic-acceptor hybrid components in which the bonding of said components is obtained by anchoring the plastic component in micro-holes formed in the surface of an acceptor component.

The invention discloses a pressure sensor based on Si-Si direct bonding, comprising a silicon substrate (1) with a shallow groove (8); the silicon substrate (1) is provided with a single crystal silicon stress membrane (2); a silicon dioxide layer (3) is arranged between the silicon substrate (1) and the stress membrane (2); four P-type single crystal silicon piezoresistors (4) are arranged on the stress membrane (2); an insulating medium silicon dioxide layer (7) is arranged among the stress membrane (2) and the piezoresistors (4); and a Wheatstone bridge is formed among the piezoresistors (4) by utilizing concentrated boron doped silicon (9) and a golden lead (6). The pressure sensor adopts Si-Si direct bonding technology to form the stress membrane and the sealing cavity; the piezoresistors thereof adopt silicon dioxide as an insulating layer and the working temperature can be up to 300 DEG C; and the pressure sensor has firm structure and excellent performance and can meet the requirements on high-temperature pressure sensors in the fields of automobile, aerospace and the like. The invention also relates to a manufacturing method of the pressure sensor.

Disclosed is a membrane-electrode structure for a solid polymer fuel cell comprising a pair of electrode catalyst layers and a polyeletrolyte membrane sandwiched between the electrode catalyst layers, wherein the electrode catalyst layers contain polyarylene having a sulfonic acid group, said polyarylene comprising a recurring unit represented by the following formula (A) and a recurring unit represented by the following formula (B);

wherein Y is a direct bonding or a group selected from a divalent electron withdrawing group and a divalent electron donating group, Ar is a mononuclear or polynuclear aromatic group, m is an integer of 0 to 10, k is an integer of 0 to 5, l is an integer of 0 to 4, and k+1≧1;

wherein R¹ to R⁸ are each a hydrogen atom, a fluorine atom, an alkyl group, a fluorine-substituted alkyl group, an aryl group or an allyl group, W is a divalent electron withdrawing group or a direct bonding, T is a direct bonding, a divalent electron withdrawing group, a divalent electron donating group or the like, and n is an integer of 2 or more.

The membrane-electrode structure for a solid polymer fuel cell of the present invention exhibits excellent electricity generation performance.

A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper electrodes is secured, and also the time-lapse degradation under high temperature which causes diffusion of copper and corrosion of copper is suppressed. Still furthermore, direct bonding connection can be established to current collecting electrodes in the power device portion, and also established to a bonding pad formed on the control circuit portion in the control circuit portion. A pad area at the device peripheral portion which has been hitherto needed is reduced, so that the area of the device is saved, and the manufacturing cost is reduced.

A semiconductor substrate (1) comprises first and second silicon wafers (2,3) directly bonded together with interfacial oxide and interfacial stresses minimised along a bond interface (5), which is defined by bond faces (7) of the first and second wafers (2,3). Interfacial oxide is minimised by selecting the first and second wafers (2,3) to be of relatively low oxygen content, well below the limit of solid solubility of oxygen in the wafers. In order to minimise interfacial stresses, the first and second wafers are selected to have respective different crystal plane orientations. The bond faces (7) of the first and second wafers (2,3) are polished and cleaned, and are subsequently dried in a nitrogen atmosphere. Immediately upon being dried, the bond faces (7) of the first and second wafers (2,3) are abutted together and the wafers (2,3) are subjected to a preliminary anneal at a temperature of at least 400° C. for a time period of a few hours. As soon as possible after the preliminary anneal, and preferably, within forty-eight hours of the preliminary anneal, the first and second wafers (2,3) are fusion bonded at a bond anneal temperature of approximately 1,150° C. for a time period of approximately three hours. The preliminary anneal may be omitted if fusion bonding at the bond anneal temperature is carried out within approximately six hours of the wafers (2,3) being abutted together. An SOI structure (50) may subsequently be prepared from the semiconductor structure (1) which forms a substrate layer (52) supported on a handle layer (55) with a buried insulating layer (57) between the substrate layer (52) and the handle layer (55).