33 results about "Beam current density" patented technology

The invention discloses a novel ion transmission focusing device, and belongs to the technical field of ion transmission. The flow limiting device comprises a flow limiting hole and an octupole rod device, each flow limiting hole is a metal plate with a small hole in the center, the two flow limiting holes form a vacuum differential cavity, and certain direct-current voltage is applied to the flow limiting holes. The octupole rod device comprises two insulating positioning rings and eight conical electrode rods which are arranged at equal intervals to form a cone shape, the eight conical electrode rods are fixed through the insulating positioning rings, and the two ends of the octupole rod are connected with an ion source outlet and a mass selector inlet respectively; every four adjacent electrodes are connected through a copper sheet to form two electrodes, and the two electrodes apply two radio frequency voltages with the same amplitude and opposite phases through a power supply. The ion transmission system can be used for focusing and transmission of cluster beams, and effectively improves the beam density in a low vacuum environment. The whole device is simple in structure, easy to machine and low in cost.

The invention relates to a waveguide grating, in particular to a method for manufacturing a waveguide grating with continuous gradually-changing groove depth, which comprises the following steps of: accurately measuring and calibrating ion beam current density distribution of a used ion beam in a working plane; establishing a cooperative control model associated with a target groove depth curve, ion beam current density distribution and scanning speed, associating the etching depth with the ion beam total dose, and accurately controlling the ion beam total dose received by each point on the waveguide grating by dynamically regulating and controlling the scanning speed of the substrate relative to the ion beam, so as to realize accurate control of the etching depth. The accurate control on the groove depth distribution is realized; based on the cooperative control model, the scanning speed corresponding to the target groove depth curve is solved by combining the set target groove depth curve and the calibrated ion beam current density distribution; and performing ion beam etching based on the solved scanning speed, and finally forming a continuous gradual change groove depth accurately corresponding to the target groove depth curve on the waveguide grating. The method can effectively overcome the defect that the high-precision waveguide grating with the continuous gradually-changing groove depth is difficult to manufacture.

The invention discloses a bismuth telluride nanopore maskless direct writing preparation method based on electron beam irradiation, and belongs to the technical field of nanometer manufacturing. The method comprises the following steps: firstly, constructing an initial nanopore in a two-dimensional bismuth telluride material by utilizing a converged electron beam; and then the aperture size of the nanopore is accurately regulated and controlled by adjusting the beam density of the electron beam. The method effectively solves the key technical bottlenecks of interface chemical residue pollution caused by a traditional photoresist mask process, intrinsic defect formation caused by high-energy particle bombardment and the like, and breaks through the limitation of an existing etching technology in the aspect of sub-nanoscale structure precision control; precise control of the aperture of the nanopore can be achieved by adjusting the irradiation intensity of the electron beam, and the method has the advantages of being easy and convenient to operate, low in cost, environmentally friendly and the like and can be widely applied to the fields of nanometer electronic devices, sensors and the like.

The invention discloses an ion thinning instrument control method based on a self-adaptive gradient energy reduction algorithm, and belongs to the technical field of transmission electron microscope (TEM) sample preparation. The problem that a traditional ion thinning technology has many limitations is solved, dynamic optimization of parameters such as ion beam energy, beam current density and sample temperature is achieved through the self-adaptive gradient energy reduction algorithm, and the sample preparation efficiency is remarkably improved; by combining multi-modal data acquisition and dynamic gradient optimization, the thinning process can be accurately controlled, and the sample quality is improved; sample damage is effectively avoided by combining a damage constraint mechanism and self-adaptive step length control, and the stability of the preparation process is improved; the method is suitable for various materials through a pre-stored optimization path library, and has wide applicability; therefore, the energy of the ion beam is optimized, the incident angle and the beam density are dynamically adjusted, and the thinning instrument is controlled.

In one embodiment, the disclosure relates to using artificial intelligence (AI) to implement automatic beam current density distribution tuning by obtaining measurements from stationary beam current measurement devices synchronously with the motion of a scanned ion beam to predict the beam tuning settings which will produce a desired beam current density profile. An exemplary method according to the disclosed embodiments include the steps of generating an ion beam as a function of an ion source; scanning the spot ion beam; obtaining signals from a plurality of stationary sensors; synchronizing the beam current measurements with the scanning of the beam to produce an input waveform; predicting the beam tuning controls that will produce the desired beam current density profile; and applying the predicted settings to the beam control system and validating that the beam current density profile matches the desired profile within a specified limit.

The invention discloses a method for improving corrosion resistance of a pure aluminum surface in a NaCl solution, and relates to the technical field of high-current pulsed ion beams, an experiment is carried out on a TEMP-6 type HIPIB device, and a polymer anode unipolar pulse mode external magnetic insulation ion diode is adopted to generate 70% C and 30% H ion beams for an irradiation experiment; the ion beam parameters are as follows: the acceleration voltage is 300kV, the pulse width is 70-80ns, the beam density is 100A / cm < 2 >, the irradiation frequency is five times, and the background vacuum degree of a vacuum chamber during irradiation is 10 <-3 > Pa.

The application discloses a composite annealing method for DBR film layers and application thereof, and comprises the following steps: S1, after the deposition of multilayer TiO2 / SiO2 dielectric reflection film is completed, the temperature in the vacuum cavity is kept in a low temperature range of 100-200 DEG C; S2, under inert gas, the film layer surface is uniformly bombarded for 5-20 minutes by using a low-energy ion beam with an energy of 50-100 eV and a beam current density of 0.1-0.5 mA / cm2, and annealing is completed. On the basis of the existing ion source assisted deposition equipment, the method innovatively applies low-energy ion beam bombardment in the thermal annealing stage, realizes stress intelligent remodeling of the DBR film layer at low temperature through the time-space superposition and synergistic effect of the thermal field and the ion kinetic energy field, and improves reliability.

A low-energy neutral particle beam generating device belongs to the field of neutral particle beam technology. The ion beam is accelerated through an extraction device and enters an ion beam deflection device, where a diversion channel is provided, and a molecular pump is installed along the axial channel of the ion source. After passing through the deflection channel, the ion beam enters the ion beam analysis device and the neutralization device area, and passes through a charged particle stripping device. The present invention generates an ion beam based on an ion source, and collimates and regulates the energy of the ion beam through an ion beam extraction device; strips the neutral components in the beam through ion beam deflection and a molecular pump; neutralizes the ions based on surface grazing neutralization; and the neutralized beam passes through a charged particle stripping device to remove the charged components in the beam. The energy distribution and beam current density of the obtained neutral particle beam can be quantitatively measured through a neutral particle beam detection device, so as to be used for the calibration of neutral particle detectors and the study of the neutral beam etching process.

The embodiment of the invention discloses an ion source online detection method and device, electronic equipment and a storage medium, and relates to the technical field of ion sources, and the method comprises the steps: receiving an ion beam emitted by an ion source, and obtaining a first current signal and a second current signal based on the ion beam measurement; the first current signal is measured by moving the Faraday cup along a horizontal axis, and the second current signal is measured by the Faraday cup under at least one bias voltage; performing inversion according to the first current signal and a space response function of the Faraday cup to obtain beam density distribution of the ion source; and / or, according to the second current signal and the spatial response function, performing inversion to obtain ion energy distribution of the ion source; the spatial response function is used for representing the probability that the ion beam is collected after entering the Faraday cup; and carrying out on-line detection on the ion source based on the beam density distribution and / or the ion energy distribution. The embodiment of the invention is suitable for carrying out online detection on the large-size ion source, the detection mode is simple, and the cost is relatively low.

The invention provides a magnetron sputtering coating control method and equipment for modified silicon plating, and the method comprises the steps S1-S4, through a composite control strategy, active compensation of the deposition rate is realized, the film thickness nonuniformity of a large-area substrate is stably controlled within + / -2% from + / -8%-12% of a traditional process, and the film thickness uniformity of the large-area substrate is controlled within + / -2%. Secondly, differential ion assistance is applied in different deposition stages through a Hall source segmented beam density control method, densification and stress relaxation in the film growth process are actively regulated and controlled, and the problems of film layer cracking, warping and the like are fundamentally solved. In addition, by means of an external cathode and a gas distribution assembly, partitioned independent adjustable gas inlet of multiple sections of target materials is achieved, the uniformity is improved, stress is reduced, meanwhile, surface migration of deposited atoms is promoted through an enhanced ion auxiliary process, a high thin film with the high film-substrate binding force is obtained, and the high-performance thin film is obtained. The problems that the film thickness is not uniform and the film layer stress is difficult to control in the film coating process are solved.

The invention discloses a topological insulator Bi2Te3 nanopore size regulation and control method based on thickness-diameter ratio feedback, and belongs to the field of two-dimensional material nanometer manufacturing. Comprising the following steps: step 1, placing a sample in a transmission electron microscope, and prefabricating nanopores with the diameter of 1-5nm in a bismuth telluride film with the thickness of 2-10nm by utilizing a converged electron beam; step 2, performing irradiation by using an electron beam with 300kV acceleration voltage, wherein the beam density is controlled to be 1.54 * 10 < 5 > A.m <-2 >; 3, feeding back the regulation and control size based on the ratio of the initial aperture of the nanopore to the thickness of the material, and when the thickness-diameter ratio is smaller than 0.5, realizing aperture shrinkage or expansion by adjusting the beam density; and when the thickness-diameter ratio is greater than 0.5, the electron beam irradiation only enables the aperture to be enlarged, and the aperture cannot be shrunk. The method does not need chemical reagents, is green and environment-friendly, can directionally regulate and control the size of the bismuth telluride nanopore, and is suitable for preparing topological quantum devices, nanofiltration membranes and thermoelectric nanostructures.

The present invention provides an efficient ion beam cross-section polishing method and device, comprising an ion source, a first focusing module, and a second focusing module; wherein the ion source is used to generate an ion beam; the first focusing module is used to focus the ion beam to increase the beam current density of the ion beam and preliminarily adjust the shape and divergence of the ion beam; the ion beam focused by the first focusing module enters the second focusing module, and the second focusing module performs unidirectional focusing on the ion beam and diverges the ion beam in another direction, thereby forming an elongated elliptical ion beam spot to irradiate the surface of the sample to be polished, thereby achieving efficient ion beam cross-section polishing. The present invention can significantly improve the ion beam current density in the effective action area, thereby improving the polishing efficiency. The device has a simple structure and is easy to be integrated into existing ion beam polishing equipment, and has broad application prospects.

The present invention provides a method for preparing Ag / Au nanoparticles and a MIM structure. Gold and silver are used as the first and second target materials, respectively, and ion sputtering technology is used. The first target material is first sputtered and then the second target material is sputtered on the surface of a substrate composed of a chemically inert insulating material, or the second target material is first sputtered and then the first target material is sputtered. Gold nanoparticles and silver nanoparticles are evenly dispersed on the surface of the substrate. The substrate is then irradiated with an electron beam, and the beam current density of the electron beam is controlled at an order of magnitude. The irradiation time is 1 to 30 minutes, and Ag / Au nanoparticles in which silver nanoparticles merge, fuse, or coat gold nanoparticles are obtained. The method is simple and easy to implement, and a MIM structure of Ag / Au nanoparticles-substrate-Ag / Au nanoparticles is obtained by using the method.

The invention provides a dynamic progressive micro-discharge polishing method for a grid assembly of an ion thruster, and relates to the technical field of space electric propulsion. According to the method, under the normal beam extraction working condition of the ion thruster, voltage between grids and extraction beam density are gradually increased in a staged mode, the controllable micro-discharge phenomenon on the surfaces of the grids is induced, and local high-temperature plasma generated by micro-discharge is used for conducting in-situ removal on burrs on the edges and the surfaces of grid holes. By optimizing the voltage-beam collaborative loading path, uniform etching and ablation of burrs are realized, and the surface quality of the grid electrode is remarkably improved. The method can be directly implemented after the ion thruster is assembled, disassembly or chemical treatment is not needed, and the method has the advantages of being high in process compatibility, high in efficiency and free of pollution.

The invention discloses an ion beam current measuring device and method, the device comprises a vertical scanning assembly, a horizontal scanning assembly, a beam current collecting plate and a controller, the vertical scanning assembly comprises a first beam limiting plate and two moving mechanisms, the first beam limiting plate comprises two beam limiting plates which are arranged up and down, beam limiting grooves in the two beam limiting plates are spliced to form a first beam limiting seam, and the beam collecting plate is connected with the first beam limiting seam; the horizontal scanning assembly comprises a second beam limiting plate and two moving mechanisms, the second beam limiting plate comprises the two beam limiting plates which are horizontally arranged in the left-right direction, beam limiting grooves in the two beam limiting plates are spliced to form a second beam limiting seam, and the moving mechanisms drive the two beam limiting plates to move in the left-right direction. The beam collecting plate is arranged at the downstream of the first beam limiting plate and the second beam limiting plate which are arranged front and back, and the controller adjusts the width of the two beam limiting seams and the motion scanning direction of the first beam limiting plate and the second beam limiting plate by controlling the four moving mechanisms. And beam information of each position point on the beam acquisition plate is obtained, and the beam cross section shape and the beam density distribution are determined according to the beam information.

The invention relates to the technical field of spaceflight electric propulsion, in particular to an electric thruster thrust vector direction measurement method, which comprises the following steps of: 1, measuring ion current density distribution on a beam vertical section of an electric thruster by adopting a Faraday probe array; step 2, calculating to obtain a beam radius containing 90% of beam current; 3, determining a beam emission source point according to the beam radius containing 90% of beam current, and establishing a global coordinate system and a beam current vector; and 4, calculating according to the beam current vector to obtain a thrust vector direction. The Faraday probe array is adopted to measure the ion current density distribution on the beam current vertical section of the electric thruster, the thrust vector direction is calculated based on the beam current vector by measuring the beam current density distribution, the measurement process is simple, and the calculation method is visual, simple and convenient.

The invention relates to a method for accurately positioning and processing a sample piece in an ion beam processing process, which comprises the following steps of: measuring beam current distribution of an ion beam through a Faraday cup, and measuring beam current density distribution and corresponding coordinates of the ion beam; the offset of the ion beam is determined by fitting the beam distribution to obtain the offset of the beam distribution center of the ion beam and the center of the Faraday cup, and the offset of the sample piece center and the center of the sample table is obtained by measuring the clamping and positioning center through a spectrum confocal displacement sensor; the processing coordinates of the sample piece are compensated by the offset of the ion beam and the offset of clamping and positioning of the sample piece, so that high-precision ion beam processing is realized; the method is scientific and reasonable in process and easy to operate, the spectrum confocal displacement sensor is combined with the Faraday cup to accurately position ion beam processing, and the processing precision of products is greatly improved.

The invention provides a method for calculating the beam height of an ion implanter. The method comprises the following steps: acquiring a beam scanning position sequence and a corresponding actually measured beam current value; calculating a current change rate set between adjacent scanning positions; determining a starting critical position and an ending critical position of the wafer completely covered by the beam current based on the current change rate; and calculating the effective beam height according to the space coordinate difference of the two critical positions. Whether the beam density is abnormal or not during injection can be judged through the beam height value.

The invention discloses a CMOS image sensor and a manufacturing method thereof. The method comprises the following steps: S1, determining the current intensity of a target ion beam: adjusting the current intensity of the ion beam to obtain a plurality of groups of ion beam current intensities and corresponding beam current densities, and forming a fitting curve; determining the current intensity of the target ion beam according to the beam density corresponding to the lowest point or the lower point of the fitting curve; s2, providing a substrate with a pixel region; and S3, ions are injected into the pixel region of the substrate through an ion injection process to form a doped region, and the ion injection process adopts the target ion beam current intensity to carry out ion injection. Compared with an existing injection method adopting low ion beam current intensity, the method has the advantages that injection is performed by adopting relatively higher ion beam current intensity on the basis of the requirement of low beam current density, damage to crystal lattices is smaller, the WP performance of the image sensor is remarkably improved, the injection time is shortened due to the higher ion beam current intensity, and the productivity is improved.

The invention discloses an ion beam removal function certainty generation method based on ion beam current online regulation and control, and the method comprises the steps: inputting the peak removal efficiency and the full width at half maximum of a required removal function into a first neural network model, and obtaining the peak beam current density and the full width at half maximum of an ion beam current; inputting a second neural network model to obtain target values of the diaphragm aperture and the target distance, adjusting the diaphragm aperture and the target distance of the ion beam equipment to the target values, and then finely adjusting the diaphragm aperture and the target distance of the ion beam equipment until the beam density of the ion beam meets the requirement; compensating the positioning error of the removal function; the ion beam device is controlled to test the workpiece to achieve deterministic generation of the required removal function. The invention aims to solve the problems that the removal function parameters of ion beam processing in a vacuum environment are unknown and uncontrollable, and the removal function manufacturing process is tedious, and the deterministic generation of the ion beam removal function is realized.

The invention provides an electron beam device. Wherein the electron beam device comprises: a filament connected as a cathode to a negative high voltage and configured to generate an electron beam; the extraction electrode is in positive high voltage relative to the lamp filament and is configured to extract electrons from the emitting surface of the lamp filament to form electron beams; and the focusing lens is configured to adjust the size of the half field angle of the electron beam so as to generate light spots with different sizes and different beam densities on the surface of the to-be-detected sample, so that charges, generated by the imaging equipment, of different conditions on the surface of the to-be-detected sample are eliminated. The electron beam device can eliminate charges of different conditions on the surface of the sample to be detected, improves the imaging quality of imaging equipment, guarantees the accuracy of image information, is suitable for various different charge conditions, and effectively enlarges the application range. Charge of a specific area on the surface of the to-be-detected sample can be eliminated, positions sensitive to electron beams and light are prevented from being damaged, and the performance of the to-be-detected sample is guaranteed.

The present application relates to waveguide grating, specifically to a waveguide grating manufacturing method with continuous and gradually changing groove depth, which precisely measures and calibrates the ion beam current density distribution of the used ion beam in the working plane; establishes a coordinated control model associated with the target groove depth curve, ion beam current density distribution and scanning speed, relates the etching depth with the total dose of ion beam, precisely controls the total dose of ion beam received by each point on the waveguide grating by dynamically regulating the scanning speed of the substrate relative to the ion beam, and realizes the precise control of the groove depth distribution; based on the coordinated control model, the scanning speed corresponding to the target groove depth curve is solved in combination with the set target groove depth curve and the calibrated ion beam current density distribution; ion beam etching is carried out based on the solved scanning speed, and finally the continuous and gradually changing groove depth accurately corresponding to the target groove depth curve is formed on the waveguide grating; the present application can effectively overcome the defect that it is difficult to manufacture the waveguide grating with high-precision continuous and gradually changing groove depth.

The present invention discloses a method for studying the irradiation damage behavior of a magnesium-based fuel matrix under simulated service conditions. The method comprises the following steps: using SRIM software to respectively calculate the penetration depths of Mg+ and He+ of different energies in a magnesium alloy; preparing a target material capable of adjusting a certain beam density of Mg+; extracting the vacuum of an irradiation target chamber, setting the neutron injection rate required for the irradiation experiment according to the SRIM calculation results, and simultaneously injecting Mg+ and He+ ion beams into the sample; using FIB to prepare transmission electron microscope samples along the irradiation depth of the irradiated sample for characterizing the irradiation damage behavior of the magnesium-based fuel matrix caused by neutron irradiation and fission gas; and by using He+ and Mg+ dual-beam ion coordinated irradiation of magnesium alloy samples, the method can effectively and conveniently realize the study of the irradiation damage behavior of the Mg alloy fuel matrix material under service conditions, and simultaneously realize the rapid screening of heat-resistant Mg alloy systems for fuel matrices.

The application discloses an etching method for semiconductor surface, comprising the following steps: placing the semiconductor to be etched in a vacuum chamber, and controlling the vacuum degree in the vacuum chamber to be stabilized at 3.5*10 ‑2 Pa~4.5*10 ‑2 Pa; introducing oxygen into the vacuum chamber, and controlling the vacuum degree in the vacuum chamber to be stabilized at 1.1*10 ‑2 Pa~1.2*10 ‑ 2 Pa; according to the introduced oxygen, performing first etching on the semiconductor surface by using an ion beam etching method; wherein the applied beam voltage is 1000V, the beam current density is greater than 0.008mA / m 3 , and the first etching time is in the range of 50min~60min; introducing argon into the vacuum chamber, and performing second etching on the semiconductor surface by using the ion beam etching method. The technical scheme can trim the film base before argon etching, effectively avoid irregular edges of the semiconductor surface after argon etching, and improve the performance of the semiconductor.

The invention provides a probe and a strengthening treatment method thereof, and the strengthening treatment method comprises the step of manufacturing a hardened layer on the surface of a probe tip, and the manufacturing of the hardened layer comprises the following steps: an electron beam quenching step: adopting an electron beam with the acceleration voltage of 60-80kV and the beam density of 5 * 10 < 3 >-1 * 10 < 4 > W / cm < 2 > to bombard the surface of the probe tip after focusing through an electromagnetic lens, the local area is heated to the temperature above the material phase transition temperature within 0.1 s or less, the cooling rate of 103-104 DEG C / s is achieved through matrix self-cooling, and a metastable-state martensite structure with the high dislocation density is formed; through the synergistic effect of electron beam parameters (60-80 kV acceleration voltage, 5 * 10 < 3 >-1 * 10 < 4 > W / cm < 2 > specific beam density) and self-cooling quenching, the technical problems of insufficient micro-area strengthening precision, insufficient hardness performance of a hardened layer, machining deformation and the like in the prior art are solved, according to the scheme, the abrasion loss of the needle tip can be effectively reduced, the service life is prolonged, subsequent machining deformation correction is not needed, and the production cost is reduced. And the production cost is reduced.

The invention discloses a cathode structure with a protective cover, which comprises a cathode and a protective cover, and the cathode and the protective cover are both made of a high-melting-point metal material; and the protective cover is sleeved on the cathode and is used for restraining the movement direction of the electrons to face the reflecting electrode and protecting the cathode to reduce ion bombardment loss. The invention also discloses a lamp filament and cathode spacing control structure, which is applied to an ion source and comprises a lamp filament, a support frame, a nut and the cathode structure with the protective cover, and one end of the cathode in the cathode structure is provided with a pipe thread structure. The invention further discloses an ion source which comprises an arc chamber cavity, a reflector and the clamping control structure. The reflecting electrode is located at one end in the cavity, and the filament and cathode spacing control structure is located at the other end, opposite to the reflecting electrode, in the arc chamber cavity and connected to the same potential with the reflecting electrode. The structure is simple and compact, the beam density is larger, the service life is longer, and the performance is good in the aspect of low energy and the service life of the ion source.

The invention relates to a novel radiochromic diaphragm calibration device and a use method, which are suitable for application of a high-beam-density particle accelerator. The device comprises a metal foil for scattering a particle beam, an RCF calibration bracket, an RCF sample to be detected and a detector for detecting the flow intensity of a particle flow. The RCF calibration support is of a plane-arc curved surface composite structure, a metal foil is fixed to the front plane and used for scattering particle beams, a clamping groove with a marked angle is formed in the arc curved surface and used for containing a to-be-measured RCF sample, and a notch is reserved at the position of a specific angle and used for a detector to measure the flow intensity of scattering particles. The beam intensity is reduced through Rutherford scattering of the metal foil, theoretical calculation is combined with actual measurement data comparison of a detector, a correction coefficient is obtained, and accurate dose calibration of the RCF sample is achieved. By adjusting the material, the thickness and the irradiation time of the metal foil, the wide-range calibration from 10Gy to 10000 Gy is realized. The method is not limited by too high flow intensity of the accelerator, and has the advantages of high flow intensity adaptability, high calibration efficiency, flexibility in use, large dynamic range, adjustable measuring range and the like.

An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement device and a time waveform of the scan command values determined in the first scan signal, calculating a first beam current density distribution of the first scan beam in a predetermined direction by performing time integration on the measured beam current, correcting a value of each component of the beam current matrix, based on the first beam current density distribution, and generating a second scan signal for realizing a target beam current density distribution in the predetermined direction, based on the corrected beam current matrix.

This invention belongs to the field of tea processing technology, specifically relating to a broadband electron beam photo-induced method for enhancing the freshness of tea and reducing pesticide residues. The method includes the following steps: Step 1, drying and spreading: Selecting primary processed tea leaves (moisture content of 30% to 35%) as raw material and drying them to control the moisture content within the range of 5% to 12%; Step 2, broadband electron beam irradiation treatment: Spreading the tea leaves evenly in an irradiation container and irradiating them with a broadband electron beam. The electron beam energy range is 0.5 MeV to 10 MeV, the beam current density is 1 mA / cm² to 50 mA / cm², and the irradiation dose is 2 kGy to 15 kGy; Step 3, post-irradiation treatment: Performing appropriate aging treatment on the irradiated tea leaves at an aging temperature of 20℃ to 40℃ for 24 to 72 hours; Step 4, sealing and packaging the aged tea leaves to obtain the finished tea product. This invention has the advantage of significantly increasing the amino acid content in tea.

The present invention discloses a method for deterministically generating an ion beam removal function based on on-line regulation of ion beam current, which includes inputting the peak removal efficiency and full width at half maximum of the required removal function into a first neural network model to obtain the peak beam current density and full width at half maximum of the ion beam current, and then inputting the obtained values into a second neural network model to obtain the target values of the aperture diameter and target distance. The aperture diameter and target distance of the ion beam device are adjusted to the target values, and then the aperture diameter and target distance of the ion beam device are finely adjusted until the beam current density of the ion beam current meets the requirements; compensating for the positioning error of the removal function; and controlling the ion beam device to perform tests on the workpiece to realize the deterministic generation of the required removal function. The present invention aims to solve the problems that the parameters of the removal function in ion beam processing in a vacuum environment are unknown and uncontrollable, and the process of fabricating the removal function is cumbersome, so as to realize the deterministic generation of the ion beam removal function.