70 results about "Beam current density" patented technology

The invention relates to a device and a method for on-orbit monitoring of charging of a satellite material surface, belonging to the technical field of space application. The device comprises an electron gun, a non-contact potentiometer probe, a three-dimensional transmission mechanism, a non-contact surface potentiometer, an electron beam current density measuring system, a monitoring electrode,a supporting structure, a first electromagnetic valve, a second electromagnetic valve, a diffusion pump, a third electromagnetic valve, a vacuum box, a mechanical pump, a vacuum penetrating wall, a measurement circuit interface and a measurement circuit. The test method comprises the steps as follows: sending an electron to a sample for monitoring the electrode surface under a vacuum condition, adjusting the position of the non-contact potentiometer probe through the three-dimensional transmission mechanism, recording charging potential Vsurface on the sample surface, measuring leakage current I through the measurement circuit, and finally obtaining a proportional relation coefficient K by known sample resistance rho according to the formula that Vsurface is proportional to KrhoI. According to the invention, the on-orbit surface charging condition of the satellite material is inverted by monitoring the leakage current of the sample in a space environment, and the device and the methodhas the advantage of simple physical structure and is easy to carry in space.

A compound reticle having generally complementary clear and opaque areas on a portion of subfield in each of two reticle layers which can be moved relative to each other form a variable transmissivity shutter to regulate charged particle beam intensity independently of source beam current. Either homogeneous or inhomogeneous (e.g. having local variations in beam current density) can be produced at will and in rapid succession to study effects of beam current on beam pattern resolution and aberrations as well as optimum focus for particular patterned subfields having respectively differing transmissivities.

Said invented belongs to nano material in situ characterization field. Said invented method contains putting nano line in organic solvent organic solvent, after ultrasonic dispersion 10-30 minute becoming suspension, dropping on metal grid coated with 60-120 nm collodion supporting film to make nano attached at supporting film, fixing metal grid on sample holder and putting in transmission electron microscope, measuring nano line unstretched length and diameter, adjusting transmission electron microscope beam voltage beam voltage as 80 KV to 400 KV and beam density as 20th power of 10 to 8X30th power of 10 electron/square centimeter second, to make collodion supporting film and nano line generating deformation, real time in situ recording nano line structural changes in deformation process, measuring nano line length line length and diameter after deformation, calculating nano length and diameter ratio and maximum strain quantity. Said invented has low cost and simple technology, capable of revealling one dimension nano line mechanical property from nano and atom level.

The invention discloses a preparation method of a WC-Ni hard alloy coating for nuclear main pump components, belonging to the technical field of material surface engineering. The preparation method comprises the following steps of: firstly, conventionally cleaning the to-be-treated surface of the nuclear main pump component; depositing a WC-Ni hard alloy coating on the surface of the nuclear main pump component by a thermal spraying method; carrying out 2-10 times of irradiation on the WC-Ni hard alloy coating on the surface of the nuclear main pump component by the high-intensity pulsed ion beam with pulse width of 50-100ns and beam current density of 20-350A/cm<2>, and generating 1-10 micrometers of remelted continuous compact jacketing layer in site on the surface of the WC-Ni hard alloy coating; carrying out high pressure hot isostatic pressing with the remelted jacketing layer to form an integrally compact and high-bonding strength WC-Ni hard alloy coating. The preparation method has the advantages that the coating is high in compactness and excellent in bonding performance with the base body; and the performances, such as wear resistance, corrosion resistance, thermal shock resistance and radiation resistance, of the nuclear main pump components can be improved remarkably, and long-term reliable and steady operation of the nuclear main pump is guaranteed.

An ion beam irradiating apparatus has: a beam profile monitor 14 which measures a beam current density distribution in y direction of an ion beam 4 in the vicinity of a target 8; movable shielding plate groups 18a, 18b respectively having plural movable shielding plates 16 which are arranged in the y direction so as to be opposed to each other across an ion beam path on an upstream side of the position of the target, the movable shielding plates being mutually independently movable in x direction; shielding-plate driving devices 22a, 22b which reciprocally drive the movable shielding plates 16 constituting the groups, in the x direction in a mutually independent manner; and a shielding-plate controlling device 24 which, on the basis of measurement information obtained by the monitor 14, controls the shielding-plate driving devices 22a, 22b to relatively increase an amount of blocking the ion beam 4 by the opposed movable shielding plates 16 which correspond to a position where a measured y-direction beam current density is relatively large, thereby uniformity of the beam current density distribution in the y direction.

The invention discloses a method for determining the total fluence of a space radiation environment effect test of a thermal control coating. According to the method, an equivalent formula when the beam current density of space continuous spectrum radiating particles is conversed into a radiating particle beam current density under certain energy is obtained according to the principle of equivalent degradation in an in-orbit and ground test on the solar absorptance of a thermal control coating, a radiation test of two groups of charged particles is carried out, curve fitting is carried out according to thermal control coating performance degradation data and radiating time data so as to determine parameters in an equivalent beam current density formula, so that the total fluence of the ground-based test can be determined. Compared with the prior art, the method has the advantages that mono-energetic electrons or protons in ground-based test equipment are adopted to simulate the injuring effect of orbit space electrons or protons on thermal control materials, and the practical operability is strong.

The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

The invention discloses a spherical target ceramic neutron tube and a manufacturing method thereof. A magnetic material ring is embedded in the lead-out end of a neutron tube ion source; after the neutron tube is sealed, the magnetic material ring is magnetized; the lead-out end of the neutron tube ion source is embedded with the magnetic material ring, and the magnetic field intensity of the lead-out electrode of the neutron tube reaches 2300 Gs; the beam current density is improved by 11.6% so as to solve the problem of insufficient lead-out end axial magnetic field of the ion source; and the shape of a target end is made into a spherical shape to double the effective target area and increase the radiating area of the target. The lead-out beam flow proton ratio of the neutron tube is greatly improved; under the condition of invariable section surface, the invention improves the target area of nuclear reaction, strengthens the cooling efficiency, greatly lowers neutron tube discharge and breakdown probability and improves the yield (by 0.7 time), the service life and the stability of the neutron tube.

The invention relates to the technical field of film material preparation, and discloses an ion beam assisted deposition system. A plasma cathode electron gun based on pseudo spark discharge is adopted as the ion beam assisted deposition system; unlike a typical ion beam assisted deposition device, the plasma cathode electron gun has multiple electrode gaps, and therefore electron beams for the hollow cathode ionization process and the subsequent conduction ionization process can be effectively generated; the energy and the beam current density of the electron beams of a hollow cathode phase are controller through different breakdown methods, the iron mass resolution is high enough, and therefore ions of hydrogen atoms and ions of hydrogen molecules can be separated; the ion energy is low and ranges from several eV to several hundred eV; the ion beam current is high enough, and therefore it is guaranteed that the ion beam assisted deposition process can be conducted; the ion beam current is wide, the diameter of the beam current is 10 mm, the hydrogen ion current density is 1 microampere per square centimeter, and therefore a deposition experiment can be conducted on a large-area substrate; mass selection on the ions only depends on an electric field and does not depend on a magnetic field, the structure is compact, and therefore the atomic beam current or active gas molecule ion beam current can be effectively controlled.

The invention belongs to the technical field of ion beams, and in particular relates to a magnetic field reinforced type linear ion source suitable for ion beam cleaning, ion beam etching and ion beam auxiliary depositing. The magnetic field reinforced type linear ion source comprises a cathode top plate, a cathode outer frame, central magnetic steel, peripheral magnetic steel, a gas channel, a water cooling anode and an insulation support. An ion beam lead-out hole comprises an annular groove arranged between a cathode top plate outer ring and a cathode top plate inner ring which form the cathode top plate; the central magnetic steel and the peripheral magnetic steel are respectively arranged at the middle and the periphery of the inside of the cathode outer frame, the cathode top plate,the cathode outer frame, the central magnetic steel and the peripheral magnetic steel form a closed annular discharge groove; and an anode is supported in the annular discharge groove through the insulation support and positioned below the annular ion beam lead-out hole, and the distance between the upper surface of the anode and the ion beam lead-out hole is above 5mm. The magnetic field reinforced type linear ion source has a long service life and capabilities of increasing the density of an extracted beam of an ion source, stably working under two working modes of high-voltage small-current and low-voltage large-current and working normally for a long time under a serious film-coating environment.

The invention relates to an array target of an X-ray source for electron beam scanning CT. The array target includes a linear array target, an embedding layer, and a target base; the linear array target comprises at least one individual target site; the individual target sites is in the shape of a line and go deep into the embedding layer by 0.5 to 10 microns; two ends of each target site extend to the edges of the embedding layer; the width of the target sites is smaller than or equal to the diameter of an electron beam, preferably, is the half peak width of the beam current density of the electron beam, and can be approximated to 1/2 to 2/3 of the diameter of the electron beam; each gap between the target sites is equal to or greater than the diameter of the electron beam; the embeddinglayer is used for configuring the target sites; the target base is disposed at the bottoms of the embedding layer and the target sites; and the thickness of the target base ranges from 20 to 300 microns.

The invention relates to a multipurpose induction conductivity measuring electrode which comprises an upper radiation-resistant insulating resin disc, a round radiation-resistant insulating resin table and a lower radiation-resistant insulating resin disc, wherein the upper radiation-resistant insulating resin disc is arranged in and fixed with an upper metal shell, and a top electrode ring and an upper shading ring are fixed at the lower end of the upper insulating resin disc; the round radiation-resistant insulating resin table is arranged in and fixed with a lower metal shell, and a volt-ampere electric current collecting plate is arranged at the upper end of the round insulating resin table; the lower radiation-resistant insulating resin disc is arranged in and fixed with the lower metal shell, and a bottom electrode ring and a bottom shading ring are fixed at the upper end of the lower radiation-resistant insulating resin disc; an electric potential testing connector is arranged at one end of the outer side of the upper metal shell, an electric current testing connector is arranged at one end of the lower metal shell, and a zero potential connector connected with a lower shading ring is arranged at the other end of the lower metal shell, and circular holes are arranged at one ends of the upper shading ring and the lower shading ring; and the electrode is applied to the measurement of normal conductivity of a dielectric material and induction conductivity after high-energy electron beam irritation in a simulated space environment and simultaneously can be used for measuring the beam current density of electron beams of a penetration test sample.

The invention discloses a multi-electron-beam-channel slow-wave structure with a trigonometric function contour, and belongs to the technical field of electric vacuum devices. The structure is composed of a cuboid shell, a plurality of cosine grid teeth distributed at the upper part in the shell and a plurality of sine grid teeth distributed at the lower part in the shell, wherein an electron beamchannel is formed between every two adjacent cosine grid teeth, circular electron beams are arranged in the electron beam channels, and the part between two adjacent sine grid teeth serves as a high-frequency system so as to jointly form the multi-electron-beam-channel slow-wave structure. The multi-electron-beam-channel slow-wave structure with the trigonometric function contour provided by theinvention is suitable for working in high-order space harmonics, and can meet requirements of the terahertz wave band. Meanwhile, the structure is provided with the natural circular electron beam channels, can achieve long-distance transmission under the condition that the electron beam current density is not reduced, and can effectively conduct beam-wave interaction.

A beam current density distribution in y direction of an ion beam 4 at a position of a forestage beam restricting shutter 32 is measured by measuring a change in a beam current of the ion beam 4 incident on a forestage multipoint Faraday 24 by passing an outer side of a side 34 of the shutter 32 while driving the forestage beam restricting shutter 32 in y direction by a forestage shutter driving apparatus 36. Further, a beam current density distribution in y direction of the ion beam 4 at a position of a poststage beam restricting shutter 42 is measured by measuring a change in the beam current of the ion beam 4 incident on a poststage multipoints Faraday 28 by passing an outer side of a side 44 of the shutter 42 while driving the poststage beam restricting shutter 42 in y direction by a poststage shutter driving apparatus 46. Further, at least one of an angle deviation, a diverging angle and abeam side in y direction of the ion beam 4 is measured by using a result of the measurement.

The invention provides an electric thruster space plume detecting device and belongs to the field of electric thruster plasma measurement. The electric thruster space plume detecting device comprisesa base, a Faraday probe, magnetic field coil barrels and a protective shell. Two sides of the Faraday probe are provided with magnetic fluxes arranged in the same direction, the protective shell is connected to the base, and the protective shell has an incident hole for passing the axis of an incident ion and is perpendicular to the magnetic flux directions of the magnetic field coils. The magnetic field formed by the magnetic field coils can shield non-axial incident ions passing through the incident hole such that the Faraday probe can allow spatial beam current density to be precise, and thus the measurement accuracy of the Faraday probe is improved.

A change of a beam current of an ion beam which passes an outside of the side of a forestage beam restricting shutter, and which is incident on a forestage multipoints Faraday is measured while the forestage beam restricting shutter is driven in a y direction by a forestage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the forestage beam restricting shutter. A change of a beam current of the ion beam which passes an outside of the side of a poststage beam restricting shutter, and which is incident on a poststage multipoints Faraday is measured while the poststage beam restricting shutter is driven in the y direction by a poststage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the poststage beam restricting shutter. By using these results, an angle deviation, a diverging angle, and/or a beam size in the y direction of the ion beam can be obtained.

An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

An outer magnet insulation ionic diode for generating large area of strong current pulse ionic beams includes an anode inserted with polyvinyl films and a cathode set with uniform distributed penetrated lattices characterizing: the anode and cathode are designed as oval fan-like ring cylinder structure, the narrow end of the gap between the inner cylinder face of the anode and the outer cylinder face of the cathode inner thin plate is 4.1-4.8mm, the wide end is 5.1-6mm, the area of the polythene film is 230x100-260x200sqmm, numbers of the lattices are 108-220, which keeps the effective penetration degree of the cathode thin plate at 65%, the pulse magnetic intensity at 0.89-1.04%.

The invention discloses an adjustable and controllable preparation method for a large-area nanometer microstructure of a fused quartz optical curved face. The method comprises the following steps: fixing a fused quartz optical curved face optical part; setting an ion incident angle theta, an ion energy E<ion>, a beam current density J<ion> and a machining time t; determining a motion track of ion beam machining performed on the fused quartz optical curved face optical part; and generating ion beams through an ion source according to the ion energy E<ion> and the beam current density J<ion>, driving the ion source to move along the motion track through an ion beam machining tool, and driving the fused quartz optical curved face optical part to perform revolving motions along a C axis in order that the ion beams enter the curved face of the fused quartz optical curved face optical part at the fixed ion incident angle theta for an incidence time t, thereby forming a regular nanometer microstructure on the curved face of the fused quartz optical curved face optical part finally. The method is particularly suitable for adjustable and controllable preparation of the large-area nanometer microstructure of the fused quartz curved face, and has the advantages of simple principle, easiness in implementation, high efficiency and low cost.

The invention provides an ion implantation device and an adjustment method of beam current density distribution. The irradiation areas of band-shaped ion beams in an amount of m (m is an integer over 2) at least partially overlap. In an ion implantation device which achieves regulated implantation amount distribution on a glass substrate, the beam current density distribution of each band-shaped ion beam can be adjusted with high efficiency. Each band-shaped ion beam is set as a target distribution of an adjustment target as a beam current density distribution. According to a pre-determined sequence, the beam current density distribution from a first band-shaped ion beam to a (m-1)th band-shaped ion beam, enabling the band-shaped ion beam to enter into a first allowing range with respect to the target distribution. Based on the difference between the distribution obtained from the adjustment result of each band-shaped ion beam and the distribution obtained from the target distribution of ion beams in an amount of m, new target distribution for adjusting a mth beam current density distribution is set, and the mth beam current density distribution is adjusted, enabling the mth beam current density distribution to enter into a second allowing range with respect to the new target distribution.