10 results about "Beam current density" patented technology

The invention discloses a method for improving corrosion resistance of a pure aluminum surface in a NaCl solution, and relates to the technical field of high-current pulsed ion beams, an experiment is carried out on a TEMP-6 type HIPIB device, and a polymer anode unipolar pulse mode external magnetic insulation ion diode is adopted to generate 70% C and 30% H ion beams for an irradiation experiment; the ion beam parameters are as follows: the acceleration voltage is 300kV, the pulse width is 70-80ns, the beam density is 100A / cm < 2 >, the irradiation frequency is five times, and the background vacuum degree of a vacuum chamber during irradiation is 10 <-3 > Pa.

The application discloses a composite annealing method for DBR film layers and application thereof, and comprises the following steps: S1, after the deposition of multilayer TiO2 / SiO2 dielectric reflection film is completed, the temperature in the vacuum cavity is kept in a low temperature range of 100-200 DEG C; S2, under inert gas, the film layer surface is uniformly bombarded for 5-20 minutes by using a low-energy ion beam with an energy of 50-100 eV and a beam current density of 0.1-0.5 mA / cm2, and annealing is completed. On the basis of the existing ion source assisted deposition equipment, the method innovatively applies low-energy ion beam bombardment in the thermal annealing stage, realizes stress intelligent remodeling of the DBR film layer at low temperature through the time-space superposition and synergistic effect of the thermal field and the ion kinetic energy field, and improves reliability.

The embodiment of the invention discloses an ion source online detection method and device, electronic equipment and a storage medium, and relates to the technical field of ion sources, and the method comprises the steps: receiving an ion beam emitted by an ion source, and obtaining a first current signal and a second current signal based on the ion beam measurement; the first current signal is measured by moving the Faraday cup along a horizontal axis, and the second current signal is measured by the Faraday cup under at least one bias voltage; performing inversion according to the first current signal and a space response function of the Faraday cup to obtain beam density distribution of the ion source; and / or, according to the second current signal and the spatial response function, performing inversion to obtain ion energy distribution of the ion source; the spatial response function is used for representing the probability that the ion beam is collected after entering the Faraday cup; and carrying out on-line detection on the ion source based on the beam density distribution and / or the ion energy distribution. The embodiment of the invention is suitable for carrying out online detection on the large-size ion source, the detection mode is simple, and the cost is relatively low.

The invention provides a magnetron sputtering coating control method and equipment for modified silicon plating, and the method comprises the steps S1-S4, through a composite control strategy, active compensation of the deposition rate is realized, the film thickness nonuniformity of a large-area substrate is stably controlled within + / -2% from + / -8%-12% of a traditional process, and the film thickness uniformity of the large-area substrate is controlled within + / -2%. Secondly, differential ion assistance is applied in different deposition stages through a Hall source segmented beam density control method, densification and stress relaxation in the film growth process are actively regulated and controlled, and the problems of film layer cracking, warping and the like are fundamentally solved. In addition, by means of an external cathode and a gas distribution assembly, partitioned independent adjustable gas inlet of multiple sections of target materials is achieved, the uniformity is improved, stress is reduced, meanwhile, surface migration of deposited atoms is promoted through an enhanced ion auxiliary process, a high thin film with the high film-substrate binding force is obtained, and the high-performance thin film is obtained. The problems that the film thickness is not uniform and the film layer stress is difficult to control in the film coating process are solved.

The invention provides a dynamic progressive micro-discharge polishing method for a grid assembly of an ion thruster, and relates to the technical field of space electric propulsion. According to the method, under the normal beam extraction working condition of the ion thruster, voltage between grids and extraction beam density are gradually increased in a staged mode, the controllable micro-discharge phenomenon on the surfaces of the grids is induced, and local high-temperature plasma generated by micro-discharge is used for conducting in-situ removal on burrs on the edges and the surfaces of grid holes. By optimizing the voltage-beam collaborative loading path, uniform etching and ablation of burrs are realized, and the surface quality of the grid electrode is remarkably improved. The method can be directly implemented after the ion thruster is assembled, disassembly or chemical treatment is not needed, and the method has the advantages of being high in process compatibility, high in efficiency and free of pollution.

The invention relates to the technical field of spaceflight electric propulsion, in particular to an electric thruster thrust vector direction measurement method, which comprises the following steps of: 1, measuring ion current density distribution on a beam vertical section of an electric thruster by adopting a Faraday probe array; step 2, calculating to obtain a beam radius containing 90% of beam current; 3, determining a beam emission source point according to the beam radius containing 90% of beam current, and establishing a global coordinate system and a beam current vector; and 4, calculating according to the beam current vector to obtain a thrust vector direction. The Faraday probe array is adopted to measure the ion current density distribution on the beam current vertical section of the electric thruster, the thrust vector direction is calculated based on the beam current vector by measuring the beam current density distribution, the measurement process is simple, and the calculation method is visual, simple and convenient.

The invention relates to a method for accurately positioning and processing a sample piece in an ion beam processing process, which comprises the following steps of: measuring beam current distribution of an ion beam through a Faraday cup, and measuring beam current density distribution and corresponding coordinates of the ion beam; the offset of the ion beam is determined by fitting the beam distribution to obtain the offset of the beam distribution center of the ion beam and the center of the Faraday cup, and the offset of the sample piece center and the center of the sample table is obtained by measuring the clamping and positioning center through a spectrum confocal displacement sensor; the processing coordinates of the sample piece are compensated by the offset of the ion beam and the offset of clamping and positioning of the sample piece, so that high-precision ion beam processing is realized; the method is scientific and reasonable in process and easy to operate, the spectrum confocal displacement sensor is combined with the Faraday cup to accurately position ion beam processing, and the processing precision of products is greatly improved.

The application discloses an etching method for semiconductor surface, comprising the following steps: placing the semiconductor to be etched in a vacuum chamber, and controlling the vacuum degree in the vacuum chamber to be stabilized at 3.5*10 ‑2 Pa~4.5*10 ‑2 Pa; introducing oxygen into the vacuum chamber, and controlling the vacuum degree in the vacuum chamber to be stabilized at 1.1*10 ‑2 Pa~1.2*10 ‑ 2 Pa; according to the introduced oxygen, performing first etching on the semiconductor surface by using an ion beam etching method; wherein the applied beam voltage is 1000V, the beam current density is greater than 0.008mA / m 3 , and the first etching time is in the range of 50min~60min; introducing argon into the vacuum chamber, and performing second etching on the semiconductor surface by using the ion beam etching method. The technical scheme can trim the film base before argon etching, effectively avoid irregular edges of the semiconductor surface after argon etching, and improve the performance of the semiconductor.

The invention discloses a cathode structure with a protective cover, which comprises a cathode and a protective cover, and the cathode and the protective cover are both made of a high-melting-point metal material; and the protective cover is sleeved on the cathode and is used for restraining the movement direction of the electrons to face the reflecting electrode and protecting the cathode to reduce ion bombardment loss. The invention also discloses a lamp filament and cathode spacing control structure, which is applied to an ion source and comprises a lamp filament, a support frame, a nut and the cathode structure with the protective cover, and one end of the cathode in the cathode structure is provided with a pipe thread structure. The invention further discloses an ion source which comprises an arc chamber cavity, a reflector and the clamping control structure. The reflecting electrode is located at one end in the cavity, and the filament and cathode spacing control structure is located at the other end, opposite to the reflecting electrode, in the arc chamber cavity and connected to the same potential with the reflecting electrode. The structure is simple and compact, the beam density is larger, the service life is longer, and the performance is good in the aspect of low energy and the service life of the ion source.

This invention belongs to the field of tea processing technology, specifically relating to a broadband electron beam photo-induced method for enhancing the freshness of tea and reducing pesticide residues. The method includes the following steps: Step 1, drying and spreading: Selecting primary processed tea leaves (moisture content of 30% to 35%) as raw material and drying them to control the moisture content within the range of 5% to 12%; Step 2, broadband electron beam irradiation treatment: Spreading the tea leaves evenly in an irradiation container and irradiating them with a broadband electron beam. The electron beam energy range is 0.5 MeV to 10 MeV, the beam current density is 1 mA / cm² to 50 mA / cm², and the irradiation dose is 2 kGy to 15 kGy; Step 3, post-irradiation treatment: Performing appropriate aging treatment on the irradiated tea leaves at an aging temperature of 20℃ to 40℃ for 24 to 72 hours; Step 4, sealing and packaging the aged tea leaves to obtain the finished tea product. This invention has the advantage of significantly increasing the amino acid content in tea.