Ion implantation apparatus

Abstract

The invention provides an ion implantation apparatus which can guarantee both the production rate of ion implantation treatment and the uneven injection precision in wafer surfaces. The ion implantation apparatus (10) performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2015-193965 filed in Japan on September 30, 2015. The entire contents of this Japanese application are incorporated herein by reference. [0002] The present invention relates to an ion implantation device, and relates to an ion implantation device for continuously performing a plurality of ion implantation processes on the same wafer. Background technique [0003] In the semiconductor manufacturing process, a process of implanting ions into a semiconductor wafer (hereinafter also referred to as "ion implantation process") is routinely performed for the purpose of changing the conductivity of the semiconductor, changing the crystal structure of the semiconductor, and the like. The device used in the ion implantation process is called an ion implantation device, which has the function of generating ions from the ion source and accelerating the generated ions to form an ion beam, ...

AI Technical Summary

Problems solved by technology

Usually, the beam setting process takes tens of seconds to several minutes, so if the beam setting process must be performed every time the rotation angle of the wafer is changed, the productivity of the ion implantation process will be greatly reduced

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