The invention relates to a novel semiconductor light-emitting diode, which comprises a substrate, a buffer layer, an N-type layer, an active layer, an electronic barrier layer, a P-type layer and a P-type contact metal layer. The P-type layer, the electronic barrier layer, the active layer and the like are penetrated through etching; an N-type layer material is exposed to one side of a P-type material directly, and an N-type contact metal and an electrode are covered on an exposed area, so that the diffusion of transverse current in the N-type layer is enhanced; and simultaneously, a P-type metal covers an integral P-type semiconductor layer, and an LED emits light from the bottom surface of the substrate. Through the improvement, the transverse diffusion distance of the current in LED devices is shortened substantially, uneven distribution of current density in the LED devices due to current congestion is prevented, so that the LED devices emit the light uniformly, and the shading effect of a P-type electrode is eliminated.