106 results about "Conduction electron" patented technology

A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film. A disruption layer is positioned on the other side of the memory film so that conduction electrons spins passing therefrom are substantially random in orientation. The magnitude of currents needed to operate the cell can be reduced using coincident thermal pulses to raise the cell temperature.

We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co₆₀Fe₂₀B₂₀. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

A high-frequency oscillation element has a ferromagnetic material which exhibits thermal fluctuation of magnetization and generates spin fluctuations in conduction electrons, a nonmagnetic conductive material which is laminated on the first magnetic material and transfers the conduction electrons, a magnetic material which is laminated on the nonmagnetic conductive material, generates magnetic resonance upon injection of the conduction electrons, and imparts magnetic dipole interaction to magnetization of a neighboring magnetic area by means of magnetic vibration stemming from the magnetic resonance, a first electrode electrically coupled with the first magnetic material, and a second electrode electrically coupled with the second magnetic material.

A spin valve device includes a non-magnetic enhancement layer adjacent an ultra thin free layer. The thickness of the free layer may be less than the mean free path of a conduction electron through the free layer. The GMR ratio is significantly improved for free layer thicknesses below 50 Å. The enhancement layer allows electrons to travel longer in their spin state before encountering scattering sites. The electronic properties of the enhancement layer material can be matched with the adjacent free layer without creating a low resistance shunt path. Because the free layer may be made ultra thin and the enhancement layer is formed of a nonmagnetic material, less magnetic field is required to align the free layer, allowing for improved data density. Also, the enhancement layer allows for effective bias point control by shifting sensor current density distribution.

The present invention is a power cell for directly converting ionizing radiation into electrical energy. The invented isotopic electric converter provides an electrical power source that includes an electronegative material layered in a semiconductor, to form a first region that has a high density of conduction electrons, and an electropositive material also layered in the semiconductor material to form a second region with a high density of holes. Said N-layers region and P-layers region are separated by a neutral zone of semiconductor material doped with a radioactive isotope, such as, but not limited to, tritium. No junction is formed between the N and P layers regions. Rather, the potential gradient across the neutral zone is provided by the difference between the work functions of the electronegative and electropositive electrodes. Electrical contacts are affixed to the respective regions of the first and second type conductivity which become the anode and cathode of the cell, respectively. Beta particles emitted by the tritium generate electron-hole pairs within the neutral zone, which are swept away by the potential gradient between the first and second regions, thereby producing an electric current.

A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.

A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.

An electric field signature detector for detecting and identifying objects that uses multiple electrostatic sensor nodes each having a passive sensing electrode whose free conduction electrons are displacement responsive to an externally applied or sensed electric field potential, and a transimpedance converter and amplifier exhibiting ultra-high input impedance for translating low level input displacement current from a sensing electrode into a useable output signal in response to a charge displacement signal induced on the passive sensing electrode by an external electric field. The electric field signature detector further includes an exciter for providing a reference electric field used in the retrieval and processing of an electric field signature representative of an object and class of object under investigation. The electric field signature detector having uses including military, security, anti-terrorist, and defense related.

A surface-enhanced Raman scattering method and apparatus to sequence polymeric biomolecules such as DNA, RNA, or proteins is introduced. The method uses metallic nanostructures such as, for example, spherical or cylindrical Au or Ag nanoparticles having characteristic lengths of 10-100 nm which when illuminated with light of the appropriate wavelength produce resonant oscillations of the conduction electrons (plasmon resonance). Electric field enhancements of 30-1000 near the particle surface resulting from such oscillations increase Raman scattering cross-sections by about 10⁶-10¹⁵ due to the E⁴ dependence of the Raman scattering, wherein the largest enhancements occur in the gap/junction between novel closely spaced structures as disclosed herein.

A cobalt iron hafnium oxide (CoFeHfO) layer is employed in a pinned layer structure of a top or bottom simple pinned or antiparallel (AP) pinned spin valve sensor for increasing a demagnetization field from the pinned layer structure which will improve biasing of a free layer structure in the spin valve sensor with minimal shunting of the sense current IS through the spin valve sensor because of its high resistance. The demagnetization field from the pinned layer structure opposes a typically high sense current field due to the sense current so as to zero bias the spin valve sensor with a magnetic moment of the free layer structure oriented parallel to an air bearing surface of the sensor. The cobalt iron (CoFe) content in the cobalt iron hafnium oxide (CoFeHfO) layer increases the magnetoresistance of the sense current due to its proximity to the spacer layer and the oxygen content in the layer causes specular reflection of conduction electrons through the sensor for still further increasing the magnetoresistance.

An improved biofuel cell having a cathode comprising a bifunctional membrane containing an oxygen oxidoreductase immobilized within a buffered compartment of the membrane and an electron transport mediator that conducts electrons from The electrodes are transferred to a redox reaction catalyzed by an oxygen oxidoreductase. The improved biofuel cell also has an anode that contains an oxidoreductase that uses an organic fuel, such as an alcohol, as a substrate. Electric current can flow between the anode and cathode.

To realize an electric field-driven type ferromagnetic resonance excitation method of low power consumption using an electric field as drive power, and provide a spin wave signal generation element and a spin current signal generation element using the method, a logic element using the elements, and a magnetic function element such as a high-frequency detection element and a magnetic recording device using the method. A magnetic field having a specific magnetic field application angle and magnetic field strength is applied to a laminate structure in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer and an electrode layer are arranged in order on an ultrathin ferromagnetic layer side. An electric field having a high-frequency component of a magnetic resonance frequency is then applied between the magnetic anisotropy control layer and the electrode layer, thereby efficiently exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.

The present invention provides a magnetic detecting element capable of increasing a difference between the ease of a conduction electron flow in a low-resistance state and the ease of a conduction electron flow in a high-resistance state to increase a resistance change ΔR. In the magnetic detecting element, a free magnetic layer or a pinned magnetic layer has a synthetic ferromagnetic structure including a first free magnetic sub-layer or a first pinned magnetic sub-layer containing a magnetic material having a positive β value, and a second magnetic sub-layer or a second pinned magnetic sub-layer containing a magnetic material having a negative β value. The β value is characteristics of a magnetic material satisfying the relationship ρ↓/ρ↑=(1+β)/(1−β)(−1≦β≦1)(wherein ρ↓ represents resistivity for minority conduction electrons, and ρ↑ represents resistivity for majority conduction electrons).

A memory element wherein a spin conduction layer having a sufficient spin coherence length and a uniform spin field can be obtained, and thereby practical use is attained and a memory device are provided. A spin conduction layer (paramagnetic layer) (24) is a fullerene thin film being from 0.5 nm to 5 μm thick, for example. The fullerene has a hollow sized, for example, from 0.1 nm to 50 nm. A paramagnetic material is included in this hollow. A fermi vector of the fullerene thin film well laps over small number of spin band or plenty of spin band of a ferromagnetic fixed layer (23) and a ferromagnetic free layer (25). Further, spin orientations of the included paramagnetic material are random. Further, electron spin in the fullerene is in a quantized state in a pseudo zero dimensional space. Thereby, a spin coherence length becomes long in the fullerene thin film, and scatteration of spin-polarized conduction electrons goes away.

The invention discloses a ternary efficient compound visible light photocatalytic material and a preparation method and application thereof. The preparation method is characterized by comprising the following steps: preparing N-K2Ti4O9 and g-C3N4 by a forging method, preparing an N-K2Ti4O9/g-C3N4 binary composite material via electrostatic attraction, and further synthesizing an N-K2Ti4O9/g-C3N4/UiO-66 ternary efficient compound visible light photocatalytic catalyst via self-assembling by a solvothermal method. According to the invention, the characteristics of good visible light response of N-K2Ti4O9, high conduction electron hole capacity of g-C3N4 and high MOF material adsorption amount of UiO-66 are utilized; the ternary compound light catalyst synthesized by integrating the advantages of N-K2Ti4O9, g-C3N4 and UiO-66 has obviously reinforced activity of performing photocatalytic degradation on organic dye under visible light under the effect of compound promoted photogenerated charge separation, and has wide application prospect in the field of photocatalysis.

A magnetic element has a first magnetic material exhibiting thermal fluctuation of magnetization which depends on an external magnetic field and generates spin fluctuation in conduction electrons; a nonmagnetic conductive material which is laminated on the first magnetic material and transfers the conduction electrons; a second magnetic material which is laminated on the nonmagnetic conductive material and generates a magnetic resonance upon injection of the conduction electrons; a first electrode electrically coupled with the first magnetic material; and a second electrode electrically coupled with the second magnetic material.

A dual GMR or dual spin valve sensor has a self-pinned layer which has its magnetic moment pinned perpendicular to an air bearing surface by sense current fields from conductive layers in the dual spin valve sensor when a sense current is conducted therethrough. This scheme eliminates one of the antiferromagnetic pinning layers which is typically employed in a dual GMR or dual spin valve sensor. The self-pinned layer is thin so that its demagnetization field will not be greater than the sense current fields acting thereon. Because of the thinning of the self-pinned layer the spin valve effect of the spin valve sensor is degraded by scattering of conduction electrons at the boundary of the self-pinned layer. In order to overcome this problem a specular reflector layer is employed in contact with the self-pinned layer for reflecting the conduction electrons back into a mean free path of conduction electrons so that the spin valve effect on the self-pinned layer side of the spin valve sensor can be added to another spin valve effect on the other side of the free layer structure for providing a double spin valve effect with an improved read gap, as compared to prior art dual spin valve sensors.