110 results about "Conduction electron" patented technology

A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively or on a single such layer. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR / R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

The invention relates to a photochemical method for removing organic phenolic pollutants and hexavalent chromium in water body and a preparation method of a catalytic agent. The method comprises the steps of: arousing a mesoporous Bi203 / TiO2 composite nano-visible light catalytic agent with visible light response to generate charge separation under the irradiation of visible light; reducing the hexavalent chromium which is high in toxicity in the wastewater into trivalent chromium which is low in toxicity and small in solubility by a conduction electron of Bi2O3; and removing the organic phenolic pollutants in the wastewater by a valence band hole oxidation method of TiO2 to achieve the aim of effectively purifying the composite polluted wastewater. The method can be performed under a normal temperature, the method is wide in application range, the wastewater does not need to be subsequently treated, the catalytic agent can be circularly used during reacting, and the use ratio of the visible light in the sunlight can be greatly improved, so that the method is wide in application prospect.

A magnetic element has a first magnetic material exhibiting thermal fluctuation of magnetization which depends on an external magnetic field and generates spin fluctuation in conduction electrons; a nonmagnetic conductive material which is laminated on the first magnetic material and transfers the conduction electrons; a second magnetic material which is laminated on the nonmagnetic conductive material and generates a magnetic resonance upon injection of the conduction electrons; a first electrode electrically coupled with the first magnetic material; and a second electrode electrically coupled with the second magnetic material.

A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.

A semiconductor device includes a heterojunction semiconductor region 9, which forms a heterojunction with a drain region 2. The heterojunction semiconductor region 9 is connected to a source electrode 7, and has a band gap different from a band gap of a semiconductor substrate constituting the drain region 2. It is possible to set the size of an energy barrier against conduction electrons, which is formed between the drain region 2 and the heterojunction semiconductor region 9, into a desired size by changing the conductivity type or the impurity density of the heterojunction semiconductor region 9. This is a characteristic not found in a Schottky junction, in which the size of the energy barrier is inherently determined by a work function of a metal material. It is easy to achieve optimal design of a passive element in response to a withstand voltage system of a MOSFET as a switching element. It is also possible to suppress diffusion potential in a reverse conduction mode and to improve a degree of integration per unit area. As a result, it is possible to reduce the size of elements and to simplify manufacturing processes thereof.

To realize an electric field-driven type ferromagnetic resonance excitation method of low power consumption using an electric field as drive power, and provide a spin wave signal generation element and a spin current signal generation element using the method, a logic element using the elements, and a magnetic function element such as a high-frequency detection element and a magnetic recording device using the method. A magnetic field having a specific magnetic field application angle and magnetic field strength is applied to a laminate structure in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer and an electrode layer are arranged in order on an ultrathin ferromagnetic layer side. An electric field having a high-frequency component of a magnetic resonance frequency is then applied between the magnetic anisotropy control layer and the electrode layer, thereby efficiently exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.

A magnetic body composed of non-magnetic material, includes a plurality of localized electron regions in each of which at least one electron is confined to form a localized spin, a barrier potential region having a higher energy than a Fermi energy of an electron in the localized electron region and permitting an electron to be confined in the respective localized electron regions, and a conductive electron region including a conductive electron system having a lower energy than an energy of the barrier potential region, wherein the respective localized electron regions are disposed separate from one another via the barrier potential region and the conductive electron region.

A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.

A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.