17 results about "Electron system" patented technology

The invention discloses a method for estimating potential track microstructure damage of a GaN device under an electron energy loss mechanism. The method comprises the following steps: establishing a GaN device structure model; simulating the motion trail of the high-energy heavy ion incidence device through numerical calculation; calculating energy deposition space-time distribution of the high-energy heavy ions along the incident trajectory under the leading of the electron energy loss mechanism; solving the coupling dual-temperature heat conduction equation of the electronic system and the lattice atomic system to obtain the temperature space-time distribution of the lattice atomic system; according to the temperature space-time distribution of the lattice atomic system, whether latent track microstructure damage is generated or not is judged by comparing the highest temperature of the lattice atomic system with the melting point of a device crystal material; and under the condition of judging that the latent track damage is generated, drawing a temperature change curve chart of lattice atoms at different positions, and determining the position of the crystal atom of which the highest temperature is equal to the melting point of the crystal material as the radius size of the latent track microstructure damage. According to the method, the latent track microstructure damage characteristics of the device can be quantitatively and quickly obtained at low cost.

The application provides a light valve, a light valve preparation method and a light-adjustable glass assembly with light resistance. By introducing a methacrylate monomer and / or an acrylic ester monomer with a conjugated pi electron system structure functional group, a macromolecular copolymer is prepared by a heating polymerization method, a suspension medium with a unique structure is formed, the light resistance functional monomer is more uniformly distributed, the macromolecular structure of the copolymer makes the chemical state of the light resistance functional group more stable, meanwhile, the physical distribution state and the chemical stable state of the light control particles are double protected, so that the light resistance stability of the light-adjustable glass assembly is significantly improved, the service life is prolonged, meanwhile, the processing performance of the material is also improved, and the actual use demand can be met.

The application provides a storage and calculation device, a counter, a shift accumulator and an in-memory multiplication and accumulation structure. The storage and calculation device is composed of a magnetic track layer and a magnetic recording layer. Whether or not there is a SGM soliton in the magnetic recording layer region causes the magnetic tunnel junction resistance of the magnetic track layer and the magnetic recording layer to be different, thereby realizing storage. Compared with the existing technology which reverses the magnetization direction of the free layer, the storage and calculation device disclosed in the application is based on a pure spin electron system of magnetic SGM solitons, has the characteristics of high speed and low power consumption of a spin electron device, and has a small physical size of the storage and calculation device, so that a high storage density can be realized.

This invention relates to the field of regenerated resources of retired lithium-ion batteries, and discloses a method for electronic state reconstruction and interface engineering regeneration of retired lithium iron phosphate based on π-conjugated interface reconstruction dielectrics. The method involves mixing retired lithium iron phosphate cathode powder with a repair medium and conducting an in-situ interface engineering reaction under mild conditions. The repair medium includes a π-conjugated interface reconstruction dielectric capable of in-situ repair and a lithium salt. The reaction utilizes the delocalized π-electron system formed by the polymerization of the π-conjugated interface reconstruction dielectric to perform orbital hybridization with defect sites in the retired lithium iron phosphate, thereby eliminating localized polaron traps and reconstructing electron transport paths, while simultaneously filling lattice lithium vacancies. After the reaction, the mixture is subjected to solid-liquid separation, and the resulting solid is washed and dried to obtain regenerated lithium iron phosphate cathode material.

The invention discloses a coumarin modified fluorescent organic silicon pressure-sensitive adhesive based on click reaction and a preparation method thereof, and relates to a coumarin modified fluorescent organic silicon pressure-sensitive adhesive and a preparation method thereof. The invention aims to solve the problem of poor adhesion performance of the existing organic silicon pressure-sensitive adhesive. The organic silicon pressure-sensitive adhesive can be simply, conveniently and effectively synthesized through cross-linking and thermocuring of a click reaction between vinyl in the vinyl silicone resin and sulfydryl on the coumarin modified mercaptopropyl silicone rubber, and the coumarin forms a rigid fused ring conjugated pi electron system due to benzo alpha-pyrone mother nucleus of the coumarin, so that the organic silicon pressure-sensitive adhesive can be used for preparing the organic silicon pressure-sensitive adhesive. After coumarin molecules absorb ultraviolet light, pi electrons in a conjugated system are transited to a high-energy excitation singlet state and then rapidly relaxed to the lowest excitation singlet state through internal conversion and vibration relaxation, and part of energy is dissipated as heat energy in the process; finally, the molecules in the lowest excitation singlet state release energy in a radiative transition mode to return to the ground state, and fluorescence is generated. The invention belongs to the technical field of pressure-sensitive adhesive preparation.

The application relates to the technical field of strong-field high-harmonic generation, and particularly discloses a double-electron quantum correlation quantitative method and system based on Bohm mechanics, which comprises the following steps: establishing a time-dependent Schrodinger equation containing an external laser field, obtaining a system ground state wave function and generating N pairs of Bohm particles initial coordinates, and performing time evolution on the wave function; according to the evolved wave function, the accurate velocity field and the accurate motion trajectory of each Bohm particle are calculated; based on the marginal probability density and the marginal probability flow density, the marginal velocity field not containing instantaneous quantum correlation effects is constructed, and the corresponding correlation-free reference trajectory is generated; the accurate trajectory is compared with the reference trajectory, and the correlation model of the correlation quantum potential and the high-harmonic radiation intensity is established. Through comparison of the accurate Bohm trajectory and the correlation-free reference trajectory constructed based on the marginal velocity field, the quantum correlation effects in a strong-field double-electron system are quantitatively separated and visually output.

The invention provides a polymer capacitor which is a solid electrolytic capacitor, and polydopamine is arranged between a dielectric layer on a valve metal surface of the capacitor and a polymer conductive polymer layer. Polydopamine is introduced between the dielectric layer and the high-molecular conductive polymer layer, the polydopamine is formed by self-polymerization of dopamine, the surface of the polydopamine contains groups such as phenolic hydroxyl groups and amino groups, the polydopamine and-OH on the surface of the dielectric layer of the metal oxide film can form hydrogen bonds, and meanwhile, the polydopamine and a continuous conjugated pi electron system ring of conductive high-molecular can form pi-pi accumulation; therefore, the bonding capacity between the metal oxide film dielectric layer and the high-molecular conductive polymer in the high-molecular solid electrolytic capacitor is improved, and the problem that the bonding capacity between the metal oxide film dielectric layer and the high-molecular conductive polymer in the high-molecular solid electrolytic capacitor is weak is solved. The invention also provides a preparation method of the polymer capacitor.

The application discloses an organic fluorescent small-molecule material, a synthesis method and application, and belongs to the technical field of fluorescent materials. The provided organic fluorescent small-molecule material is formed by connecting a phenothiazine compound and a dioxothiophene compound through a double bond, and a functional group is connected to N of the phenothiazine compound. The above can adjust a large pi conjugated system by adjusting the connecting position and quantity of the phenothiazine group and the dioxothiophene, and enhance the push-pull electron system by adding a modification group at a specific site, so that a series of fluorescent molecules with the characteristics of wavelength adjustable, large stokes shift and high fluorescence quantum yield are designed. The obtained fluorescent molecules are widely applied to fields such as fluorescent labeling, fluorescent imaging and the like, such as gene sequencing, nucleic acid detection, immune detection, immunofluorescence lateral chromatography, flow cytometry fluorescent labeling, surgical navigation and the like.

The application discloses a novel barium antimony tellurium sulfur crystal and a preparation method and application thereof, the structural formula of the novel barium antimony tellurium sulfur crystal is BaSbTe2S; the structure of the novel barium antimony tellurium sulfur crystal is as follows: in the structure, Ba contains 2 crystallographic sites, Sb contains 2 crystallographic sites, Te contains 4 crystallographic sites, and S contains 2 crystallographic sites; wherein, Sb atoms are connected with 5 Te atoms and 1 S atom respectively to form [SbTe5S] distorted octahedron, and single Te atoms are connected with each other to form a planar square net [Te2] layer; Ba atoms are connected with 5 Te atoms and 4 S atoms respectively to form [BaTe5S4] polyhedron, Ba atoms are filled between layers to balance the electric charge, and Ba atoms are arranged along the c-axis direction to form a two-dimensional layered structure; the novel barium antimony tellurium sulfur crystal prepared by the method has the characteristics of charge density wave and superconductivity, and can be applied to the fields of thermoelectricity, strong correlated electron systems and quantum Hall effect.

The invention discloses a bias voltage response type switch based on a two-component molecular system and a preparation method and application of the bias voltage response type switch. The switch comprises a bottom electrode, a bimolecular functional layer and a top electrode; wherein the bimolecular functional layer is obtained by respectively dissolving a component A and a component P in an organic solvent and then mixing according to a molar ratio of 1: 1; the component A is a non-conjugated compound of which the end group is modified with a sulfydryl anchoring group, and the HOMO-LUMO energy level gap delta E is 3.5-4.2 eV; the component P is a small molecule compound with a conjugated pi electron system, and the HOMO-LUMO energy level gap delta E is 2.1-2.3 eV. Precise switching of two conductance states is achieved through bias voltage amplitude regulation and control, meanwhile, the device has the advantages of being stable in state, adjustable in threshold value and easy and convenient to prepare, and the application requirements of a molecular logic circuit and information storage are met.

A scanning electron microscopy (SEM) system performs color SEM using a probe and detector. The probe directs incoming probe electrons at a sample. The detector detects electrons scattered by the sample. The system determines materials of the sample using the detected scattered electrons. The system generates a color SEM image of the sample using the detected scattered electrons, determining colors in the image based on determined materials. The system may determine an electron distribution, e.g., electron count relative to detection angle, and may determine materials by comparing a sample's electron distribution to electron distributions for a group of materials. The system may be a focused ion beam scanning electron microscopy (FIB-SEM) system that directs a FIB at samples to separate layers thereof. For each of multiple layers, the system detects scattered electrons, to generate a three-dimensional color SEM image of the sample having thicker than individual layers.

The invention discloses a preparation method of a perovskite solar cell based on electron transport layer modification. The cell sequentially comprises an ITO conductive substrate, a doped conjugated organic acid potassium salt modified tin dioxide electron transport layer, a perovskite light absorption layer and a carbon electrode from bottom to top. During preparation, a modified tin dioxide precursor solution is firstly prepared and spin-coated and annealed to form the electron transport layer, then the perovskite light absorption layer is prepared in an air environment through hot air assisted spin-coating and two-step annealing, and finally, carbon paste is scraped to form the carbon electrode. The oxygen vacancy defect is passivated through coordination of oxygen atoms in the conjugated organic acid potassium salt and tin ions on the surface of tin oxide, a charge transmission channel is constructed by means of a conjugated pi electron system, energy level matching and interface contact quality are optimized, the cell prepared in an air environment still has excellent performance, and the requirements of low-cost and large-scale production are met.

The invention discloses a Michelson interference micro-displacement measurement method and device based on modal decomposition and phase regression, and belongs to the technical field of nanoscale displacement measurement. The device is composed of an optical system and an electronic system, wherein the optical system is used for generating an interference light field carrying displacement information, and the electronic system is responsible for collecting, preprocessing and digitizing interference signals. According to the method, self-adaptive decomposition is carried out on interference signals through a band-limited dynamic noise addition CEEMDAN algorithm, noise is effectively separated, phase trend information is extracted, high-precision phase reconstruction is achieved in combination with prior linear least square regression, and finally the nanoscale displacement is obtained through calculation. According to the invention, excellent measurement precision and robustness can still be maintained under complex conditions of incomplete signal period, undersampling, low signal-to-noise ratio and the like, and the system is simple in structure and easy to implement, and can be widely applied to the fields of precision processing, optical detection, micro-nano sensing, semiconductor manufacturing and the like.

The application discloses a low-temperature denitration catalyst and a preparation method thereof, and belongs to the technical field of flue gas denitration catalysts. 60 The catalyst is prepared by doping fullerene C 60 The pi electron system of C 60 is highly delocalized on the three-dimensional curved surface thereof, so that C 60 has excellent electron transfer capacity; and the doping proportion of C 60 can effectively promote the rapid progress of the catalytic reaction. Therefore, the catalyst prepared by the application can be applied to low-temperature flue gas denitration, can significantly improve the denitration efficiency, can widen the active temperature range of the catalyst, and can solve the problems of poor low-temperature activity, insufficient sulfur resistance and easy poisoning of traditional catalysts.

The invention discloses a high-speed high-transparency deep ultraviolet photoelectric detector based on an n +-Ga2O3 / i-Ga2O3 / TeO2 heterojunction and a preparation method of the high-speed high-transparency deep ultraviolet photoelectric detector, and relates to the field of wide bandgap semiconductor deep ultraviolet photoelectric detectors. The epitaxial structure comprises a high-transmittance substrate, a TTO layer, an n +-Ga2O3 layer, an i-Ga2O3 layer, a p-type TeO2 layer and an ITO layer from bottom to top, and the n < + >-i-p heterojunction is formed by the n < + >-Ga2O3 charge transport layer, the i-Ga2O3 light absorption layer and the TeO2 energy band regulation and control layer. On the basis of unique energy band arrangement of the n +-i-p heterojunction, a large built-in electric field can be provided for the light absorption layer, photon-generated carriers can be quickly swept out of a junction region without applying external bias voltage, and efficient collection of the photon-generated charges is realized; meanwhile, all the used materials are highly transparent to visible light, so that the detector has the photoelectric properties of self-driving, high sensitivity and fast response, the unique value of visual observation is considered, and integration and production of an intelligent transparent electronic system can be realized in the future.

The application provides a vacuum electron device, an electronic module and an electronic system. By adding a reconstruction structure between an energy exchange structure and a collection structure, the energy distribution of the energy-exchanged electron beam is adjusted by the reconstruction structure, which is conducive to optimizing the energy distribution of the adjusted electron beam. In this way, compared with the energy-exchanged electron beam directly entering the collection structure, the energy-exchanged electron beam enters the collection structure after the energy distribution adjustment by the reconstruction structure, which is conducive to the collection structure achieving greater collection efficiency for the electron beam, and further makes the overall tube efficiency meet the application requirements.

A voltage-tunable gate electron system integrated with a superconducting resonator for quantum computing. A superconducting coupling device includes a resonator structure. The resonator structure has a first end configured to be coupled to a first device and a second end configured to be coupled to a second device. The device further includes an electron system coupled to the resonator structure, and a gate positioned proximal to a portion of the electron system. The electron system and the gate are configured to interrupt the resonator structure at one or more predetermined locations, forming a switch. The gate is configured to receive a gate voltage and vary an inductance of the electron system based on the gate voltage. The variation in inductance induces the resonator structure to vary a coupling resistance between the first device and the second device.