The application provides a
semiconductor laser element with a topological
phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower
waveguide layer, an
active layer, an upper
waveguide layer and an upper limiting layer. The application is characterized in that a topological
phonon state layer with a multilayer structure is arranged between the lower
waveguide layer and the lower limiting layer of the
semiconductor laser element, and the saturation
electron drift velocity distribution characteristics, the
electron affinity
energy distribution characteristics and the polarized optical
phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological
quantum state and the topological
phase change of the phonon spectrum can be adjusted, the
quantum state and the lattice vibration mode can be changed, the
Stokes shift loss of the difference between the
photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature
quenching problem of the
laser can be inhibited.