70 results about "Beam electron" patented technology

The invention discloses an in-situ identification analysis method for superfine non-metallic inclusions in steel, and mainly solves the technical problems that the superfine non-metallic inclusions in the existing steel are difficult to identify and extract and the microstructure and phase composition of the inclusions are difficult to characterize. According to the technical scheme, the method for detecting and analyzing the small-size non-metallic inclusions in the steel by using the scanning electron microscope comprises the following steps: (1) preparing a metallographic sample; 2) preparing a transmission electron microscope sample, and determining an area where the inclusion of the metallographic sample is located by using a scanning electron microscope; carrying out accurate positioning and in-situ micro-nano thinning and cutting on the area where the inclusion of the metallographic sample is located by using a focused ion beam double-beam electron microscope system, and extracting the superfine non-metallic inclusion; and 3) analyzing the ultrafine non-metallic inclusions in the transmission electron microscope sample, and detecting the grain orientation of the ultrafine inclusions by using a transmission-type electron back scattering diffractometer. The method provided by the invention can accurately identify and extract the superfine non-metallic inclusions and the phase composition, components and grain orientation thereof in situ.

The invention provides a planar distribution multi-beam electron gun, and relates to the technical field of microwave electric vacuum, and the planar distribution multi-beam electron gun comprises a housing; the cathode assembly is arranged in the shell, the cathode assembly comprises a cathode head, the surface of the cathode head is provided with a plurality of emitting surfaces which are arranged in a common plane in parallel at intervals, and the emitting surfaces are configured to escape electrons after being heated; the anode is arranged in the shell, and an electric field is formed between the anode and the emitting surfaces so as to accelerate escaped electrons, so that a plurality of electron beams are formed; the focusing electrode is arranged between the cathode head and the anode, an opening is formed in the focusing electrode, a plurality of grid wires are arranged on the opening, a grid gap between every two adjacent grid wires is aligned with the multiple emission surfaces in the emission direction of the electron beams, and the multiple grid wires are constructed to control beam diameters and divergence angles of the multiple electron beams; each electron beam passes through the gate slot aligned with the emission surface on which the electron beam is formed and enters the anode.

The invention relates to the technical field of in-situ detection of electron microscopes, in particular to a one-stop four-dimensional transmission scanning focused ion beam double-beam electron microscope, which comprises a vacuum cavity provided with a vacuum cavity cover; a sample table is arranged on the inner side of the vacuum cavity cover; the electron beam, the ion beam, the manipulator, the sample holder and the gas injection system are mounted on the vacuum cavity through the multifunctional in-situ sealing flange; the system further comprises a 4D STEM detector. According to the invention, electron beam observation, ion beam processing, four-dimensional scanning transmission electron microscope imaging information acquisition and in-situ electric, optical, thermal, force and other external field loading functions are integrated, and scanning electron microscope imaging, transmission electron microscope sample preparation and in-situ 4D STEM diffraction information acquisition under multi-field combined application can be carried out on a sample in one device. One-stop full-scale multi-field combined application detection is realized, the test result is prevented from being influenced by contact with air, water and other external environments in the sample transfer process, and meanwhile, the test efficiency is remarkably improved.

The invention relates to a cross-platform high-vacuum sample transfer device, which comprises a vacuum sealed cabin in which a cross-shaped channel formed by connecting a front channel, a rear channel, a left channel and a right channel is arranged; the quick connector is arranged at the port of the front channel and can be connected with external equipment; and the magnetic coupling transmission rod is arranged at the rear channel and is used for realizing the transfer of the sample carrying table. Compared with the prior art, through high-precision structural design, high-vacuum transfer of a sample among different platforms such as a glove box, a scanning electron microscope, a double-beam electron microscope or a micro-nano laser processing system is realized, pollution sources such as water and air are effectively isolated, intrinsic characteristics of the sample are ensured not to be interfered, and the sample quality is improved. And the accuracy and success rate of sample analysis and processing are obviously improved.

The invention relates to the technical field of EBSD sample preparation, and discloses an FIB sample preparation method of an electronic component mosaic sample for EBSD, and the method comprises the following steps: S1, carrying out slicing treatment on a sample according to a preset requirement, and carrying out mosaic treatment on the sliced sample by adopting a cold mosaic mode to obtain a mosaic sample; s2, treating the inlaid sample by adopting a step-by-step grinding and polishing strategy; s3, carrying out argon ion beam grinding treatment on the embedded sample; s4, performing metal spraying and film coating treatment on the inlaid sample, and putting the inlaid sample into a double-beam electron microscope after the metal spraying and film coating treatment is completed; and S5, carrying out FIB polishing on the EBSD characterization area of the embedded sample through a double-beam electron microscope, and carrying out EBSD characterization on the characterization area. Through the whole process of sample preparation, the drifting and charge influence can be remarkably reduced, the collection stability and the one-time success rate are improved, high reproducibility and batch consistency are achieved, and meanwhile the process period is shortened; and the overall processing and characterization efficiency is improved.

A method for electron beam processing is described herein. A method includes disposing a substrate on a stage of a processing tool comprising a plurality of independently powered, independently controlled modular electron beam devices, concurrently directing a plurality of electron beams from the plurality of electron beam devices to the substrate to process different areas of the substrate concurrently, and, while directing the electron beams to the substrate, moving the substrate at a first constant velocity during a first scan pass and at a second constant velocity during a second scan pass, the first constant velocity being different from the second constant velocity.

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

The invention relates to digital twin calibration. Systems or techniques are provided for facilitating improved digital twin calibration for scientific instruments. In various embodiments, the system can synchronize a parametric state of the digital twinning with a physical state of the scientific instrument via execution of a full-state Bayesian filter. In various instances, the full-state Bayesian filter can include a set of calibration iterations, each calibration iteration in the set of calibration iterations can include Bayesian updates to all of the parametric states based on iterations that can be presented by the scientific instrument and that can be simulated by the digital twinning that share observable amounts. In various instances, the scientific instrument can be a charged particle microscope, the parametric state of the digital twin can be an aberration coefficient vector of the charged particle microscope, and the iterative common observable quantity can be a Fourier transform of a converged beam electron diffraction pattern of an amorphous carbon sample captured by the charged particle microscope.

A multi-beam electron-optical system for a charged-particle assessment tool, the system comprising: a plurality of control lenses, a plurality of objective lenses and a controller. The plurality of control lenses are configured to control a parameter of a respective sub-beam. The plurality of objective lenses are configured to project one of the plurality of charged-particle beams onto a sample. The controller controls the control lenses and the objective lenses so that the charged particles are incident on the sample with a desired landing energy, demagnification and / or beam opening angle.

A monolithic multi-aperture plate for shaping multiple electron beams for a multi-beam electron beam system is described. The monolithic multi-aperture plate consists of a single, monolithically constructed element with individual functional planes and a multitude of apertures. Apart from the multitude of apertures, the monolithic multi-aperture plate contains no cavities. The monolithic multi-aperture plate is designed for improved performance and extended service life.

A particle accelerator comprising a waveguide comprising a series of acceleration cells. The series of acceleration cells comprise an input acceleration cell configured to accelerate a beam of electrons along the central axis of the cells. A source of electrons is configured to input a beam of electrons into the input acceleration cell and a magnet arrangement is configured to prevent electrons that have deviated from the beam of electrons from hitting the source of electrons.

Electron source (2) for generating an electron beam (8) with a cathode (1) and an anode (4) arranged on the same silicon carbide substrate (5), wherein the cathode (1) has a graphene layer (12) arranged directly on the same substrate (5), characterized in that the electron source (2) has an acceleration section between the cathode and the anode to extract electrons from the cathode due to an electrical potential difference between the cathode and the anode and to accelerate them from the cathode towards the anode, wherein the potential difference is greater than 1 kV.

Systems and methods are provided for degrading PFAS in a semi-solid sample. The semi-solid sample includes PFAS molecules in a partially liquid solution. An electron donor, and optionally a surfactant, are introduced into the mixture, forming micelles. An electron donor associates with the micelle surface and releases hydrated electrons upon exposure to UV light to initiate the reductive defluorination reaction, resulting in fluoride, water, and simple carbon compounds.

To provide a device capable of reducing variations at least in a shape and a focusing angle at an intermediate image plane position of multi-electron beams.SOLUTION: A multi-electron beam irradiation device includes: a shaping aperture array substrate 203 in which a portion of each of electron beams traveling in a divergence direction passes through a plurality of first openings to form multi-electron beams traveling in the divergence direction; a multi-stage lens array 210 of three or more stages including a plurality of lens arrays of two or more stages in which each lens has a multipole of at least a quadrupole disposed on the trajectory of each beam, the multi-stage lens array deflecting the multi-electron beams traveling in a divergence direction to form substantially parallel multi-electron beams and also performing magnification correction and focal length correction in two orthogonal directions; and an angle limiting aperture array substrate 211 in which a plurality of second openings are formed and the multi-electron beams that have passed through the multi-stage lens array pass through the plurality of second openings, to thereby limit a divergence angle or a focusing angle of each electron beam.SELECTED DRAWING: Figure 1

The utility model relates to the technical field of material test sample preparation, and provides an FIB-TKD combined double-beam electron microscope sample clamp, which comprises a base detachably fixed on an electron microscope sample table capable of automatically adjusting the angle along with the inclination of an electron microscope; the fixed clamping block is fixed on the base, and one side of the fixed clamping block is provided with a first clamping surface; the movable clamping block is detachably connected with the fixed clamping block through a fastener, one side of the movable clamping block is provided with a second clamping face, and the first clamping face and the second clamping face are matched to be used for clamping the half copper mesh; the semi-copper net protrudes out of the top surfaces of the fixed clamping block and the movable clamping block; a first receding face is arranged on the side, away from the first clamping face, of the movable clamping block, and a second receding face is arranged on the side, away from the second clamping face, of the fixed clamping block. The fixture does not touch an objective lens and an EBSD probe during angle adjustment, the fixture does not need to be replaced, direct combination of FIB and TKD is realized, interruption caused by angle adjustment through the fixture and risks caused by secondary lofting are avoided, and the fixture is simple in structure and low in machining difficulty and cost.

Electron beam powder bed fusion may be performed using waste powder from laser beam powder bed fusion by pre-heating a build chamber using stepped increases of electron beam current. To perform the pre-heating without smoking the powder, a plurality of predetermined interim temperatures, ranging from an ambient, resting temperature of the build chamber to a predetermined preheated temperature, are determined. A build plate within the build chamber is exposed to a plurality of streams of electrons, one at a time, while the build plate is surrounded by the waste powder. Each stream of electrons has a progressively increasing current, with the current being increased each time an actual temperature of the build chamber reaches or exceeds the next predetermined interim temperature. The actual temperature of the build chamber is monitored during the pre-heating, to compare the actual temperature of the build chamber to the plurality of predetermined interim temperatures.

The invention discloses a film layer monitoring device and epitaxy equipment, the film layer monitoring device is used for vapor phase epitaxy equipment, and the film layer monitoring device comprises an electron beam emission mechanism which comprises an electron emission assembly and an electron channel; the electron emitting assembly is used for generating electron beams; an inlet of the electron channel is communicated with an emitting end of the electron emitting assembly, and an outlet of the electron channel is arranged at a position close to the edge of the wafer; electron beams generated by the electron emitting assembly are glanced to the surface of the wafer through the electron channel so as to be diffracted on the surface of the wafer to form diffracted electron beams; a receiving end of the electron beam receiving mechanism is located in the epitaxial chamber; the electron beam receiving mechanism is configured to capture diffracted electron beams and convert the diffracted electron beams into quantizable signals; the electron beam receiving mechanism is further configured to perform in-situ monitoring on the wafer film layer based on the quantizable signal. The crystal quality and the deposition thickness of the film layer can be monitored in situ in the film growth process, and high-quality imaging of electron diffraction signals can be ensured.

The invention provides an FIB-TKD processing characterization method for the integral cross section of micron particles, which comprises the following steps: step 1, sample preparation: loading powder particles on the cross section of a sheared copper foil with the thickness of 10-dozens of microns, clamping the copper foil on a sample support with the edge exposed by 1-3mm, putting the copper foil into a double-beam electron microscope, depositing a protective layer on the upper surface of the powder particles, and carrying out sample preparation; and carrying out enhanced deposition on two sides of the powder particles. Step 2, thinning: thinning the particles by using a TEM (Transmission Electron Microscope) sample preparation program; and step 3, TKD characterization: enabling the thin area of the powder particles to form an angle of 20 degrees with the horizontal plane, inserting an electron backscatter diffraction (EBSD) detector, and carrying out TKD characterization. According to the method, by optimizing the process, FIB preparation and TKD characterization are integrated, fixation is enhanced, the conductivity of a deposition layer is enhanced, the deposition efficiency is improved, the whole particle cross section can be prepared, and characterization is successful.

The present invention relates to a method for 3D printing a digital representation of a 3D structure. The method includes the steps of: solidifying vapor on the surface of a cooled substrate to form a first solidified organic layer; exposing at least a portion of the first solidified organic layer with at least one electron beam to form one or more voxels within the first solidified organic layer; solidifying vapor on the surface of the first solidified organic layer to form a second solidified organic layer; exposing at least a portion of the second solidified organic layer with at least one electron beam to form one or more voxels within the second solidified organic layer; and transferring the first and second solidified organic layers to ambient conditions to evaporate the unexposed areas of the first and second solidified organic layers. In the voxel formation step in the first solidified organic layer, one or more voxels are arranged according to a predetermined first pattern and remain substantially undamaged under ambient conditions. In the step in the second solidified organic layer, one or more voxels are arranged according to a predetermined second pattern and remain substantially undamaged under ambient conditions. The predetermined first and second patterns are defined by first and second G codes obtained from the digital representation of the 3D structure to be 3D printed, respectively. Furthermore, the present invention relates to a method of 3D printing at room temperature and a 3D printer.

A monolithic multi-aperture plate and an improved manufacturing method for a monolithic multi-aperture plate for forming a plurality of electron beams for a multi-beam electron beam system are described. The monolithic multi-aperture plate consists of a monolithically constructed element with individual functional planes, a plurality of apertures and an embedded structured metal layer for electrical connection. Apart from the plurality of apertures, the monolithic multi-aperture plate contains no cavities. The monolithic multi-aperture plate is designed for better performance and longer service life.

The application relates to the technical field of accelerator beam diagnosis, and provides a Faraday cylinder for high-power heavy ions with permanent magnet secondary electron suppression, which comprises a head and a moving device, the head comprises a collecting cup, a permanent magnet and a fixing support, the collecting cup is used for receiving beam particles and secondary electrons generated by beam electron bombardment; the permanent magnet is used for suppressing secondary electron escape; the fixing support is used for fixing the collecting cup and the permanent magnet according to the beam motion direction; the moving device is connected with the fixing support, and the moving device is used for driving the head to switch between a working state and a non-working state. The application receives beam particles and secondary electrons generated by beam electron bombardment through the collecting cup, suppresses secondary electron escape through the permanent magnet, fixes the collecting cup and the permanent magnet according to the beam motion direction through the fixing support, and the permanent magnet can effectively suppress high-energy electron escape, thereby greatly increasing the accuracy of high-energy beam current measurement.

The invention discloses a non-positioning and extraction-free FIB preparation and TKD characterization integrated method, which comprises the following steps: fixing a pretreated sample, putting the sample into a double-beam electron microscope FIB-SEM, and selecting a processing area; carrying out FIB processing, depositing a protective layer in a processing area of the sample, thinning the upper surface and the lower surface of the sample by adopting an ion beam until an electron beam is transparent, and cleaning the sample by adopting the ion beam to reduce an amorphous layer; and finally, TKD characterization is carried out. The problems that in the prior art, a sample prepared through FIB is transferred to a copper net, the FIB-TKD process is tedious in operation, the sample is prone to being damaged, and the working efficiency is low are solved. According to the method, FIB-TKD is combined, so that the extraction time is saved, the steps are simplified, the efficiency is improved, the limitation on the size of a sample is reduced, flaws can be remedied again, and the method is also suitable for blocks, films and particles processed at non-specific positions.

The application discloses a preparation method of an integrated semiconductor nanowire photoelectric device and belongs to the technical field of photoelectrons. The application extracts different material type semiconductor nanowires dispersed on a pyramid silicon wafer by using a mechanical hand (tungsten needle) of a focused ion beam-scanning electron beam (FIB-SEM) double-beam electron microscope, respectively transfers the nanowires to the same interdigital electrode, and fixes the nanowires by depositing a conductive material through the FIB to form a photoelectric detector integrated with multiple semiconductor nanowires, which not only widens the detection wave band of the device, but also maintains the advantages of the respective nanowires. Therefore, the use of the pyramid silicon wafer dispersion substrate and the FIB-SEM double-beam electron microscope provides a brand-new solution for the preparation of an integrated different material nanowire wide-spectrum high-performance photoelectric detector.

A multi-beam electron-optical system for a charged-particle assessment tool, the system comprising: a plurality of control lenses, a plurality of objective lenses and a controller. The plurality of control lenses are configured to control a parameter of a respective sub-beam. The plurality of objective lenses are configured to project one of the plurality of charged-particle beams onto a sample. The controller controls the control lenses and the objective lenses so that the charged particles are incident on the sample with a desired landing energy, demagnification and / or beam opening angle.

To provide a device capable of reducing variations at least in a shape and a focusing angle at an intermediate image plane position of multi-electron beams.SOLUTION: A multi-electron beam irradiation device includes: a first condenser lens 202 that refracts an electron beam in a focusing direction to form substantially parallel beams; a shaping aperture array substrate 203 in which a plurality of first openings is formed and a portion of each of the electron beams that have become the substantially parallel beams passes through the plurality of first openings to form multi-electron beams; a multi-stage lens array 210 of three or more stages including a plurality of lens arrays of two or more stages in which each lens has a multipole of at least a quadrupole disposed on a trajectory of an associated beam among the multi-electron beams; and an angle limiting aperture array substrate 211 in which the multi-electron beams that have passed through the multi-stage lens array pass through a plurality of second openings, to thereby limit a divergence angle or a focusing angle of each electron beam.SELECTED DRAWING: Figure 1

The invention provides an aircraft pull rod structure and a welding manufacturing method thereof, a pull rod assembly comprises three welding parts, a butt joint and lap joint combined joint is formed, and the assembly is welded by adopting a welding method of three electron beams with equal energy. A two-component structure adopted by an early pull rod is improved, a three-component welding method is adopted, large forgings and a large number of numerical control machining processes are omitted, and the manufacturing cost is reduced. A three-beam electron beam welding technology is provided, arcs are started at the positions, spaced by 120 degrees, on the same circumference at the same time, welding stress is evenly distributed, and the purpose of reducing welding deformation is achieved. A butt joint and lap joint combined joint form is adopted, the advantage of large fusion depth of electron beam welding is utilized, three assemblies are thoroughly welded at a time, and the production efficiency is improved.

The disclosure provides a double injection planar magnetic control injection electron gun, which comprises a focusing electrode, two strip-shaped cathodes, an anode and a magnetic field generating assembly. The focusing electrode comprises two inclined surfaces extending in the Z-axis direction and arranged oppositely, the two strip-shaped cathodes are respectively installed on the inclined surfaces of the focusing electrode in parallel with each other, and the inclined surfaces are introduced with clockwise or counterclockwise rotation, and the cathodes are configured to respectively emit electrons after being heated; the anode forms an electric field with the two strip-shaped cathodes to accelerate the emitted electrons to form an electron beam; the electron beam rotates under the action of the magnetic field generated by the magnetic field generating assembly to form two strip-shaped electron beams, and reduce the included angle between the cross section of the motion trajectory of the two strip-shaped electron beams in the XY plane and the ZX plane.

The positioning device of the anode and the focusing electrode of the strip electron beam klystron comprises a base forming a containing space with an upper end opening, a gun shell being detachably installed in the containing space; a first adjusting assembly is installed on the base for adjustably setting a second positioning member on a first positioning member; an adjusting ring is arranged on the upper end of the second positioning member instead of the anode; the first adjusting assembly adjusts the parallelism and the height difference between the adjusting ring and the focusing electrode of the focusing electrode assembly to position the first positioning member in the axial direction; the second adjusting assembly drives the second positioning member to move and rotate relative to the gun shell in the radial direction of the gun shell to adjust the concentricity of the first axis on which the adjusting ring is located and the second axis on which the focusing electrode is located, adjust the included angle of the adjusting ring and the focusing electrode in the horizontal plane, position the second positioning member and the first positioning member, and realize the positioning of the anode assembly and the focusing electrode assembly.

The application discloses a frequency multiplication backward wave oscillator and a harmonic amplification method. The frequency multiplication backward wave oscillator comprises a first slow wave structure and a second slow wave structure. The first slow wave structure comprises a first electron beam channel and a first grating extending along the first electron beam channel. The second slow wave structure comprises a second electron beam channel and a second grating and a third grating extending along the second electron beam channel. The working frequency of the third grating is N times of the working frequencies of the first grating and the second grating, wherein N is a positive integer. A connecting waveguide is connected between the first electron beam channel and the second electron beam channel. A first output port is arranged on the second electron beam channel. The application can significantly reduce the starting current density, improve the output power and shorten the starting time by using one slow wave structure to generate electromagnetic waves for one electron beam and then delivering the electromagnetic waves to another slow wave structure to modulate another electron beam.

To provide a multibeam klystron provided with a collector part capable of coping with miniaturization and simplification of a cooling mechanism.SOLUTION: The multi-beam klystron 10 comprises an electron gun part 14 for generating a plurality of electron beams 12, a collector part 18 for capturing the electron beams 12, and a plurality of resonance cavities 21 arranged between the electron gun part 14 and the collector part 18. The collector part 18 has a collector body 30 and a plurality of collector holes 31 which are provided in the collector body 30 and individually capture the electron beams 12.SELECTED DRAWING: Figure 1