42results about How to "No breakdown" patented technology

The invention relates to a high-voltage PMOS transistor comprising an insulated gate electrode (18), a p-type source (15) in an n-type well (11), a p-type drain (14) in a p-type well (12), which is located in the n-type well, and a field oxide region (13) between the gate electrode and drain. The depth (A'-B') of the n-type well below the drain (14) is less than its depth below the source (15) and the greatest depth (A'-C') of the p-type well lies below the drain (14).

The invention relates to a 600V extra-high voltage aluminum electrolyte capacitor working electrolyte and a preparation and an application thereof; the working electrolyte comprises the following materials: 44.5-80.3% of main solvent, 5-15% of auxiliary solvent, 8-15% of solute, 0.5-2.5% of sparking voltage enhancer, 6-10% of stabilizer and 0.2-3% of hydrogen absorbent; the preparation method comprises the following steps: mixing the main solvent and the auxiliary solvent evenly, heating the mixture to 60-90 DEG C; adding sparking voltage enhancer, heating the mixture to 135-155 DEG C; cooling the heated mixture to 65-80 DEG C by circulating water, adding the solute and the stabilizer, heating the product to 105-135 DEG C; finally, adding the hydrogen absorbent and natural cooling to obtain the working electrolyte. Proper sparking voltage enhancer and stabilizer are added in the electrolyte to improve the high voltage resistant and high temperature resistant properties of electrolyte and to ensure the electrolyte to have low aerogenesis property; the aluminum electrolyte capacitor prepared by using the electrolyte has long service life and high voltage resistant property, and can not be broken down as the sparking voltage of the electrolyte is unstable.

The invention provides a current collector with a pore-forming functional coating, a pole piece and a lithium ion battery, and the current collector with a pore-forming functional coating, comprising a conductive base layer and a functional coating coated on at least one surface of the base layer layer, the functional coating contains a gas-generating compound whose decomposition temperature is below 250°C and can generate gas. The functional layer of the current collector of the present invention is coated with a compound with gas-generating and decomposing properties, which can produce through-holes through the coating by decomposing the gas-generating compound at the bottom of the active coating without affecting the existing coating process. , thereby improving the dynamic performance of battery products. The method is simple, easy to implement, low in cost, suitable for promotion and has high application value.

The invention relates to a laser spot welding method for metal panel components. The method comprises the following steps: selecting a laser welding machine; carrying out pre-treatment on a to-be-spot-welded lower layer metal panel with thickness of 0.8 mm to 1 mm and a to-be-spot-welded upper layer metal panel with thickness of 1 mm to 1.2 mm; carrying out fit fixation on the to-be-spot-welded lower layer metal panel and the to-be-spot-welded upper layer metal panel; carrying out laser electric welding on two layers of to-be-welded metal panels by adopting a laser spot welding manner. The laser spot welding method for metal panel components is characterized in that technological parameters of laser spot welding are as follows: laser power is 2.3 KW to 3.0 KW, spot welding time is 180 ms to 220 ms, welding speed is 12 mm / s to 16 mm / s, focal length of lens is Phi 50 *120 to Phi 50*150 mm, off-focus value: is 0 to 1 mm, and light extraction frequency is 6 Hz to 10 Hz; the laser power is enabled to rise to 100% of total power within the first 0.5 ms and kept for 8.5 ms to 9 ms, the laser spot welding work is completed, and then the laser power is fallen to zero from 100% of total power within 0.4 ms. The laser spot welding method for metal panel components has the advantages that the flat surface, small deformation, non-oxidation and no other traces of the welded metal panels can be guaranteed, and the welded metal panels are connected fixedly and reliably without punctures.

The invention provides a high pressure P-shaped metal oxide semiconductor tube which is used for silicon-on-insulator, comprising a semiconductor substrate, wherein a buried oxide layer is arranged on the semiconductor substrate; the buried oxide layer is provided with an isolation deep groove which is constituted by a left oxide layer, a right oxide layer and a polysilicon layer which is arranged between the left oxide layer and the right oxide layer; the left and right sides of the isolation deep groove are both high pressure P-shaped metal oxide semiconductor tubes of silicon-on-insulator with common structures; an N-shaped contact area of the transistors at the right side of the deep groove is connected with the polysilicon layer in the middle of the deep groove through a layer of polysilicon on the surface; and the right oxide layer of the deep groove clings closely with the N-shaped contact area of the transistors at the right side of the deep groove. The isolation groove structure not only can effectively prevent the overburning of the high pressure P-shaped metal oxide semiconductor tube of silicon-on-insulator at the right side of the deep groove under the condition of breakdown, but also can effectively reduce chip area and improve integration level.

The invention discloses an equipotential optical fiber unit for a high-voltage photoelectric composite cable. Tube, semi-conductive plastic reinforcement, wire armor and semi-conductive plastic outer sheath. Each protective layer protects the electrical connection through metal and non-metallic materials, and each protective layer is equipotential. Under the action of the electric field of the power cable, there will be no potential difference between the metal and non-metallic protective layers, and the optical unit as a whole and other structures of the photoelectric composite cable also form an equipotential body, and other structures using the optical unit and the cable do not exist Potential difference, so that not only the optical unit itself will not cause breakdown due to excessive induced voltage, but also prevent breakdown between the optical unit and the high-voltage cable core, which ensures the safety of the optical unit and the cable body, and improves the safety of the cable. service life.

To provide a TIG (inert gas shielded tungsten arc) welding torch in which the seizure in the contact faces between a collet and a collet body is prevented to facilitate the exchange of an electrode, the phenomenon that arc heat conducts from the electrode to a torch body via the collet body is suppressed and large welding current can be made to flow, and whose using rate can be increased. The TIG welding torch is provided with a torch body, a collet supporting an electrode located at the center of the torch body, and a collet body supported by a metallic member in contact with the inside thereof and supporting the collet in contact therewith. The collet body is composed of a cylindrical insert member fitted to the tip part of the collet body and having a receiving hole of the electrode at an axial core part, and the balance collet body shell having an inserting hole of the collet. The insert member is formed of an electrically conductive metal having high electrical conductivity and having impact resistance and wear resistance. The collet body shell is formed of an electrically conductive metal having low thermal conductivity.

The invention belongs to the cable technology field and especially relates to a submarine high-voltage cable. The cable is formed by a conductive unit, a metal shielding layer, a water-resisting layer, an inner sheath, an armor layer, an outer sheath and an outer sheath protection layer which are successively arranged from inside to outside. The conductive unit is formed by a conductor, an insulating layer, an insulation shielding layer and a conductor protection layer. On any cross section, a center of a circle of the conductor is superposed with a center of a circle of the insulating layer. A diameter of the insulating layer is 1.5-5 times of a diameter of the conductor and a minimum value of an insulating layer thickness is 1.5mm. A filling rope group and a reinforced component group are alternatively distributed in an external portion of the inner sheath. The filling rope group and the reinforced component group are tightly contacted with the inner sheath. The material of the outer sheath protection layer is polyamide. The insulating layer is made of silane crosslinked polyethylene or a special material. The invention also provides a manufacturing method. The cable possesses advantages that a mechanical property redundancy amount is appropriate; resources can be saved; wear-resistant performance is good; water antiseepage performance and seawater prevention performance are possessed; a shielding property is good and a high voltage can be transmitted.