42results about How to "No breakdown" patented technology

The invention relates to a high-voltage PMOS transistor comprising an insulated gate electrode (18), a p-type source (15) in an n-type well (11), a p-type drain (14) in a p-type well (12), which is located in the n-type well, and a field oxide region (13) between the gate electrode and drain. The depth (A'-B') of the n-type well below the drain (14) is less than its depth below the source (15) and the greatest depth (A'-C') of the p-type well lies below the drain (14).

The invention belongs to the cable technology field and especially relates to a submarine high-voltage cable. The cable is formed by a conductive unit, a metal shielding layer, a water-resisting layer, an inner sheath, an armor layer, an outer sheath and an outer sheath protection layer which are successively arranged from inside to outside. The conductive unit is formed by a conductor, an insulating layer, an insulation shielding layer and a conductor protection layer. On any cross section, a center of a circle of the conductor is superposed with a center of a circle of the insulating layer. A diameter of the insulating layer is 1.5-5 times of a diameter of the conductor and a minimum value of an insulating layer thickness is 1.5mm. A filling rope group and a reinforced component group are alternatively distributed in an external portion of the inner sheath. The filling rope group and the reinforced component group are tightly contacted with the inner sheath. The material of the outer sheath protection layer is polyamide. The insulating layer is made of silane crosslinked polyethylene or a special material. The invention also provides a manufacturing method. The cable possesses advantages that a mechanical property redundancy amount is appropriate; resources can be saved; wear-resistant performance is good; water antiseepage performance and seawater prevention performance are possessed; a shielding property is good and a high voltage can be transmitted.