High pressure P-shaped metal oxide semiconductor tube of silicon-on-insulator

A technology of silicon-on-insulator and semiconductor tube, applied in the field of power semiconductor devices, can solve the problems of transistor burning, increase chip area consumption, reduce chip usage area, etc., and achieve the effect of preventing burning
CN101692454BInactive Publication Date: 2011-05-11SUZHOU POWERON IC DESIGN
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SUZHOU POWERON IC DESIGN
Publication Date
2011-05-11
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention provides a high pressure P-shaped metal oxide semiconductor tube which is used for silicon-on-insulator, comprising a semiconductor substrate, wherein a buried oxide layer is arranged on the semiconductor substrate; the buried oxide layer is provided with an isolation deep groove which is constituted by a left oxide layer, a right oxide layer and a polysilicon layer which is arranged between the left oxide layer and the right oxide layer; the left and right sides of the isolation deep groove are both high pressure P-shaped metal oxide semiconductor tubes of silicon-on-insulator with common structures; an N-shaped contact area of the transistors at the right side of the deep groove is connected with the polysilicon layer in the middle of the deep groove through a layer of polysilicon on the surface; and the right oxide layer of the deep groove clings closely with the N-shaped contact area of the transistors at the right side of the deep groove. The isolation groove structure not only can effectively prevent the overburning of the high pressure P-shaped metal oxide semiconductor tube of silicon-on-insulator at the right side of the deep groove under the condition of breakdown, but also can effectively reduce chip area and improve integration level.
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Description

technical field

[0001] The invention belongs to the field of power semiconductor devices, and more specifically relates to a high-voltage P-type metal oxide semiconductor tube of silicon-on-insulator suitable for high-voltage applications. Background technique

[0002] Power semiconductor devices are the basic electronic components for energy control and conversion in power electronic systems. The continuous development of power electronics technology has opened up a wide range of application fields for semiconductor power devices, and the characteristics of semiconductor power devices such as on-resistance and breakdown voltage determine The basic performance of the power electronic system, such as efficiency and power consumption. Modern power electronic devices and related products represented by lateral double-diffused metal-oxide-semiconductor transistors are playing an increasingly important role in industries, energy, transportation, and other occasions that use elect...

Claims

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