Storage element and memory

A technology of storage elements and memory, which is applied in the field of non-volatile memory memory, can solve problems such as the impossibility of applying current, and achieve the effect of increasing coercive force and improving thermal stability

Inactive Publication Date: 2010-06-16
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, since the address lines become thinner with the miniaturization of elements forming MRAM, it is impossible to apply sufficient current

Method used

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Examples

Experimental program
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Embodiment Construction

[0093] First, an outline of the present invention will be described before explaining specific embodiments of the present invention.

[0094] In the present invention, as described above, information is recorded by reversing the magnetization direction of the storage layer of the storage element by spin transfer. The storage layer is formed of a magnetic substance such as a ferromagnetic layer, and holds information according to the magnetization state (magnetization direction) of the magnetic substance.

[0095] The basic operation of reversing the magnetization direction of a magnetic layer by spin transfer is to apply a current equal to or greater than a certain threshold (Ic) in a direction perpendicular to the layer surface to the magneto-resistive element (GMR element) or magnetic tunnel junction. Elements (MTJ elements) formed storage elements. At this time, the polarity (direction) of the current depends on the magnetization direction to be reversed.

[0096] If a cu...

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Abstract

A memory in which thermal stability is improved without increasing the writing current. The memory is provided with a storage element (3) having a storage layer (17) for holding information by the magnetization state of a magnetic body. A magnetization fixation layer (31) is provided on the storage layer (17) through an intermediate layer (16). The intermediate layer (16) consists of an insulator. Direction of magnetization M1 of the storage layer (17) is changed by injecting electrons subjected to spin polarization in the laminating direction, and information is recorded on the storage layer (17). Strain is applied to the storage layer (17)from an insulation layer on the periphery of the storage layer (17) having a smaller coefficient of thermal expansion as compared with the storage layer (17). The memory is also provided with wiring for supplying a current in the laminating direction of the storage element (3).

Description

technical field [0001] The present invention relates to a storage element that changes the magnetization direction of a storage layer by injecting spin-polarized electrons, and a memory having the same and being suitable for application to a nonvolatile memory. Background technique [0002] In information devices such as computers, DRAMs having high operating speed and high density are widely used as random access memories. [0003] However, since DRAM is a volatile memory whose information is lost when power is turned off, a nonvolatile memory whose information is not lost is desired. [0004] In addition, Magnetic Random Access Memory (MRAM), which records information by magnetization of a magnetic substance, has attracted attention as a candidate for nonvolatile memory and is being developed. [0005] In MRAM, the magnetic layer of the magnetic storage element located at the intersection of the address lines is reversed by applying current to two types of address lines (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8246H01L43/08H01L27/105H01L43/10
CPCH01L43/08B82Y10/00B82Y25/00H01L27/228H10B61/22H10N50/10H10N70/801
Inventor 细见政功大森广之五十岚实山元哲也肥后豊山根一阳大石雄纪鹿野博司
Owner SONY CORP
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