2531results about "Capacitor manufacture" patented technology

A multilayer electronic component includes a plurality of dielectric layers interleaved with a plurality of internal electrode elements and a plurality of internal anchor tabs. Portions of the internal electrode elements and anchor tabs are exposed along the periphery of the electronic component in one or more aligned columns. Each exposed portion is within a predetermined distance from other exposed portions in a given column such that bridged terminations may be formed by depositing one or more plated termination materials over selected of the respectively aligned columns. Internal anchor tabs may be provided and exposed in prearranged relationships with other exposed conductive portions to help nucleate metallized plating material along the periphery of a device. External anchor tabs or lands may be provided to form terminations that extend to top and / or bottom surfaces of the device. Selected of the conductive elements may be formed by a finite volume percentage of ceramic material for enhanced durability, and external lands may be thicker than internal conductive elements and / or may also be embedded in top and / or bottom component surfaces. A variety of potential internal electrode configurations are possible including ones configured for orientation-insensitive component mounting and for high density peripheral termination interdigitated capacitors.

The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.

Provided is an abnormality detecting device for detecting an abnormality of electric storage devices such as a battery pack. Comparators (140-1) to (140-n) detect timing in which a voltage reaches a prescribed voltage, for each block of a battery pack (100). A judging section (160) detects a current at a time when the voltage reaches the prescribed voltage, and a representative current value is calculated for each block. The deviation of the representative current value of each block is compared with the threshold value, and when the deviation is large, it is judged that there are abnormalities such as short-circuiting, minute short-circuiting, IR (internal resistance) increase, capacitance reduction, and the like.