20results about "Printed capacitor incorporation" patented technology

The invention relates to an electric connector (1) for a data or communication cable, having the following features: - a housing (10), first (41) and second contact elements (42), — the first contact elements (41) are connected to the second contact elements (42) via conductor tracks (64, 65), wherein two conductor tracks (64, 65) form a differential line (61), - a first circuit board (86), — the first circuit board (86) has compensation units (68), the first circuit board (86) is arranged at least partially in the housing (10), characterised by the further features: - the first circuit board (86) is designed as a flexible circuit board, — the first circuit board (86) is preferably fixedly arranged on a support element (75).

A semiconductor device may comprise an insulator substrate, a second substrate, a first structured metallization layer comprising a first section configured to operate at a first potential, and a second section configured to operate at a second potential. The insulator substrate may comprise a second structured metallization layer which may comprise a first section coupled to the first potential and a second section coupled to the second potential. At least one routable third structured metallization layer may comprise a first segment coupled to the second potential and a second segment coupled to the first potential.

An apparatus for retrofitting a HID lighting system includes using existing components of previously installed HID lighting systems such as its ballasts while replacing some capacitors to adjust the power supplied to a retrofit LED luminaire. Unused ballast drivers are removed, and a self-contained ballast driver assembly is mounted into the electronic control enclosure of the previously installed lighting system. Some of the retrofit LED luminaires include an uplighting lens, an optic, or a diffuser for providing uplight. An aiming bracket and an aiming plate allow for the horizontal aiming angle of a light luminaire to be set.

A semiconductor device includes: an insulator substrate; a second substrate disposed at a first surface of the insulator substrate; a first structured metallization layer disposed at a second surface of the insulator substrate opposite the first surface, the first structured metallization layer comprising a first portion configured to operate at a first potential and a second portion configured to operate at a second potential; the insulator substrate comprises: a second structured metallization layer buried in the insulator substrate and configured for EMI shielding, arranged adjacent to the second substrate and comprising: a first portion coupled to the first potential; a second portion coupled to the second potential, where the first portion and the second portion do not overlap; and at least one routable third structured metallization layer, the at least one routable third structured metallization layer comprising: a first section coupled to the second potential; a second section, the second section being coupled to the first potential; wherein the first part of the second structured metallization layer and the first section of the third structured metallization layer form a first buffer capacitor.

An apparatus for retrofitting a HID lighting system includes using existing components of previously installed HID lighting systems such as its ballasts while replacing some capacitors to adjust the power supplied to a retrofit LED luminaire. Unused ballast drivers are removed, and a self-contained ballast driver assembly is mounted into the electronic control enclosure of the previously installed lighting system. Some of the retrofit LED luminaires include an uplighting lens, an optic, or a diffuser for providing uplight. An aiming bracket and an aiming plate allow for the horizontal aiming angle of a light luminaire to be set.

Provided for herein is an apparatus that includes multiple printed circuit board (PCB) layers and a via assembly. The via assembly includes a signal via extending through the multiple layers, and the signal via is configured to transmit a signal between the layers. The via assembly also includes a capacitive structure connected to the signal via to adjust an impedance of the via assembly along the via assembly. The capacitive structure is physically and electrically separate from other components of the PCB.

In one aspect, a capacitor or network of capacitors is / are provided for vertical power delivery in a package where the capacitor(s) is / are embedded in or forms the entirety of the package substrate core. In a second aspect, a plurality of thin-film capacitor structures are provided for implementing vertical power delivery in a package. In a third aspect a method is provided for fabricating hermetically sealed thin-film capacitors.

An object of the present disclosure is to provide a circuit board capable of achieving improved heat dissipation characteristics. The circuit board includes a substrate having a ceramic board as a base material; and a thin film capacitor mounted on the substrate such that a mounting surface faces the conductor layer. The thin film capacitor includes the dielectric layer, first and second capacitor electrodes, formed on one and the other surfaces of the dielectric layer. The capacitor electrode is connected to the wiring pattern included in the conductor layer. The capacitor electrode or a terminal electrode connected thereto is exposed to the upper surface of the thin film capacitor that faces away from the mounting surface.

A power supply device includes: a primary-side printed circuit board (PCB); a secondary-side PCB insulated from the primary-side PCB; a filter device including a plurality of metal plates disposed between the primary-side PCB and the secondary-side PCB; and a transformer disposed on the filter device, and including a primary-side winding connected to the primary-side PCB and a secondary-side winding connected to the secondary-side PCB.

The present disclosure relates to a capacitively coupled resonator for a high frequency current isolator. An isolator for high frequency signals transmitted between two circuits configured to operate at different voltage domains is provided. The isolator can include a resonator capable of operating at high frequency with high bandwidth, high transmission efficiency, high isolation rating, and small substrate footprint. In some embodiments, the isolator can operate at frequencies not less than 30 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range of values within this range. The isolator can include isolator components that are electrically isolated from each other and capacitively coupled. The dimensions and shapes of the isolator components can be configured to control the values of the equivalent inductance and capacitance of the isolator to facilitate resonance in operation. The isolator is compatible with different manufacturing processes, including, for example, microfabrication and PCB manufacturing processes.

Provide for herein is an apparatus that includes multiple printed circuit board (PCB) layers and a via assembly. The via assembly includes a signal via extending through the multiple layers, and the signal via is configured to transmit a signal between the layers. The via assembly also includes a capacitive structure connected to the signal via to adjust an impedance of the via assembly along the via assembly. The capacitive structure is physically and electrically separate from other components of the PCB.

A coil structure applied in the field of wireless charging comprises a circuit board and a conductor. The conductor is arranged on the circuit board. The conductor comprises a plurality of coil turns, an input terminal, an output terminal, and a plurality of first capacitor structures. The coil turns are formed around a center point. The input terminal is connected to a one terminal of the coil turns. The outlet terminal is connected to another terminal of the coil turns. Each of the first capacitor structures is arranged on a corresponding one of the coil turns. Distance between the first capacitor structures and the output terminal is smaller than a distance between the first capacitor structures and the input terminal, and the first capacitor structures do not overlap with the output terminal.

Semiconductor device comprising an insulator substrate, a second substrate arranged on a first surface of the insulator substrate, a first structured metallization layer arranged on a second surface of the insulator substrate opposite the first surface, wherein the first structured metallization layer comprises a first section configured to operate at a first potential and a second section configured to operate at a second potential; wherein the insulator substrate comprises: a second structured metallization layer buried in the insulator substrate, configured for EMI shielding, and arranged adjacent to the second substrate, comprising: a first section coupled to the first potential, and a second section coupled to the second potential, wherein the first section and the second section are non-overlapping;at least one routable third structured metallization layer, comprising: a first segment coupled to the second potential; a second segment coupled to the first potential; wherein the first section of the second structured metallization layer forms a first snubber capacitance with the first segment of the third structured metallization layer.

In one aspect, a capacitor or network of capacitors is / are provided for vertical power delivery in a package where the capacitor(s) is / are embedded in or forms the entirety of the package substrate core. In a second aspect, a plurality of thin-film capacitor structures are provided for implementing vertical power delivery in a package. In a third aspect a method is provided for fabricating hermetically sealed thin-film capacitors.

The present invention relates to an electronic power board (1) comprising: - a capacitive laminated bus bar (2) in the form of a first stack of two metal layers, particularly copper, namely an inner metal layer and an outer metal layer (4) separated from each other by a first layer of electrically insulating material; - a layer of thermal interface material disposed between said first stack and a metal base; - an integrated current sensor comprising a magnetic flux concentrator (9) inserted into openings made in the metal base, said magnetic flux concentrator (9) containing a second stack of layers comprising a second layer of electrically insulating material, a layer of material conductive to the current to be measured, a printed circuit board (PCB), and a current measurement component. Figure for the abstract: Fig 2

The present disclosure relates to a printed circuit board including: a glass layer; a plurality of blind cavities respectively penetrating through a portion of the glass layer from an upper surface or a lower surface of the glass layer; a plurality of passive elements respectively disposed in the plurality of blind cavities; and an insulating layer covering at least a portion of each of the glass layer and the plurality of passive elements and disposed in at least a portion of each of the plurality of blind cavities. At least two of the plurality of blind cavities have different depths.