The invention provides a
quantum dot film patterning method and application. The
quantum dot film patterning method comprises the following steps: (1) mixing
quantum dots with a photosensitive cross-linking agent to form a
thin layer; (2) carrying out patterning
exposure treatment on the
thin layer to obtain a patterned
quantum dot thin film; wherein ligands containing carbon-
hydrogen bonds are arranged on the surfaces of the quantum dots; the photosensitive cross-linking agent has a structure as shown in a formula I: # imgabs0 #, wherein R1 is an
electron donating group; n > = 2; x is a group which does not affect generation of a singlet intermediate. The
quantum dot film patterning method can realize efficient patterning of different types of formed quantum dots in the air, has the advantages of
high resolution, strong universality and suitability for large-scale industrial production, can be used for preparing photoelectric devices such as
quantum dot LEDs and the like, and can maintain the photoelectric property of the quantum dot material to a greater extent.