Resistive
working memory device (100) comprising: a variable-resistance
dielectric layer (110, 604) having a top surface and a bottom surface; a
cathode (114, 112, 113, 608, 606, 607) arranged above the variable-resistance
dielectric layer (110, 604) adjacent to the top surface; a
metal cover layer (108, 602) arranged below the variable-resistance
dielectric layer (110, 604) adjacent to the bottom surface; and an
anode (106, 502) arranged below the
metal cover layer (108, 602), wherein the resistive
working memory device (100) further comprises: a
semiconductor support area (103, 403) comprising a
metal compound structure (101, 401) arranged in a low-k
dielectric layer (102, 402) is arranged;and a dielectric protective layer (104, 404) having an opening over a section of the metal
compound structure (101, 401), wherein side walls of the dielectric protective layer (104, 404) adjoining the opening terminate over the metal
compound structure (101, 401) and wherein the
anode (106, 502) lies over the dielectric protective layer (104, 404) and adjoins the metal compound structure (101, 401) through the opening in the dielectric protective layer (104, 404).