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18results about "Non-mechanically variable capacitors" patented technology

Self-adaptive resonance adjusting device and method for through-the-earth transmitting antenna

The invention relates to the technical field of wireless detonating devices. The invention discloses a self-adaptive resonance adjusting device for a through-the-earth transmitting antenna. The self-adaptive resonance adjusting device comprises a through-the-earth antenna; an adjustable capacitor array and an antenna measuring unit are arranged in the tuning capacitance box, the adjustable capacitor array is connected with the through-the-earth antenna and used for achieving continuous adjustment of a capacitance value within an nF-level range so as to tune an electromagnetic wave signal of the through-the-earth antenna, and the antenna measuring unit is arranged at the output end of the adjustable capacitor array and used for measuring the electromagnetic wave signal of the through-the-earth antenna. The impedance sensor is used for measuring the real impedance of a resonant circuit of the through-the-earth antenna to obtain an output end digital signal; an antenna driver and a tuning controller are arranged in the driving cabinet, and the antenna driver is connected with the adjustable capacitor array and used for outputting a radio frequency driving signal to the adjustable capacitor array; the tuning controller is connected with the adjustable capacitor array and the antenna measuring unit and is configured to receive the output end digital signal sent by the antenna measuring unit to the tuning controller and adjust the capacitance of the adjustable capacitor array in response to the output end digital signal.
Owner:RONGGUI SICHUANG BEIJING TECH

Variable capacitor, impedance matching device, and plasma processing device

The variable capacitor includes a holding portion, a first electrode, and a second electrode. The holding unit is configured so as to be able to hold an ionic liquid. At least one first electrode is provided in the holding portion and is configured so as to apply a direct-current voltage of either positive or negative. At least two second electrodes are provided in a portion where an electric double layer is formed in the ionic liquid of the holding portion when a DC voltage is applied to the first electrode, and are configured so as to be able to be energized with high-frequency power via the holding portion.
Owner:TOKYO ELECTRON LTD

3D capacitor and capacitor array fabricating photoactive substrates

The present invention provides a method of fabrication and device made by preparing a photosensitive glass substrate comprising at least silica, lithium oxide, aluminum oxide, and cerium oxide, masking a design layout comprising one or more holes or post to form one or more high surface area capacitive device for monolithic system level integration on a glass substrate.
Owner:3D GLASS SOLUTIONS INC

Methods and Apparatuses for Use in Tuning Reactance in a Circuit Device

Methods and apparatuses for use in tuning reactance are described. Open loop and closed loop control for tuning of reactances are also described. Tunable inductors and / or tunable capacitors may be used in filters, resonant circuits, matching networks, and phase shifters. Ability to control inductance and / or capacitance in a circuit leads to flexibility in operation of the circuit, since the circuit may be tuned to operate under a range of different operating frequencies.
Owner:PSEMI CORP

A ring-shaped ceramic capacitor with a hole drilled in the center.

ActiveJP2026086323AMechanically variable capacitor detailsFixed capacitor dielectricCeramic capacitorHemt circuits
A ring-shaped ceramic capacitor with a central hole is provided. [Solution] An annular capacitor is formed by sintering a ceramic base and a ceramic reaction diaphragm together. Through holes are provided in the axial centers of both the ceramic base and the ceramic reaction diaphragm, providing assembly passages to the circuit elements to be combined. This facilitates the integration of the annular capacitor into the complex circuit of the temperature-pressure sensor. By simplifying the overall structure of the temperature-pressure sensor to include only the circuit and sealing structure, the temperature-pressure sensor is equipped with an automatically assembled structure, reducing production and assembly costs. The first and second annular circuits designed for the annular capacitor have higher initial values ​​and a wider range of change compared to a disc ceramic capacitor without a through hole in the center. This allows the annular capacitor to have a wider measurement range and finer pressure sensing grading, thereby improving the accuracy of pressure measurement.
Owner:DEEP AMPERON TECHNOLOGY CO LTD

Class d amplifier circuit

To provide a class D amplifier circuit that outputs an output signal with desired characteristics even if a voltage of a signal input to a capacitor of a low-pass filter changes.SOLUTION: A class D amplifier circuit includes: a PWM modulation circuit; a first driving circuit connected to the PWM modulation circuit; a second driving circuit connected to the PWM modulation circuit; and a differential signal filter circuit 38 connected to the first driving circuit and the second driving circuit. The differential signal filter circuit includes a first inductor 40a, a second inductor 40b, a first capacitor 1a, a second capacitor 1b, a first input terminal 50a, a second input terminal 50b, a first output terminal 56a, a second output terminal 56b, and a reference potential terminal. The first capacitor and the second capacitor each include dielectric and electrodes sandwiching the dielectric. The first input terminal is connected to the first driving circuit, the second input terminal is connected to the second driving circuit, the reference potential terminal is connected to a reference potential, and the first output terminal and the second output terminal are connected to a load circuit 62.SELECTED DRAWING: Figure 15
Owner:MURATA MFG CO LTD

Method of manufacturing a multilayer ceramic capacitor

A method of manufacturing a multilayer ceramic capacitor including printing a titanium oxide-based material on a region between a plurality of internal electrode patterns of one surface of each of a plurality of ceramic green sheets on which the plurality of internal electrode patterns are respectively disposed; and cutting the region between the plurality of internal electrode patterns in a first direction in a structure in which the plurality of ceramic green sheets are stacked in the first direction.
Owner:SAMSUNG ELECTRO MECHANICS CO LTD

Variable capacitor, impedance matching apparatus, and plasma processing apparatus

A variable capacitor includes a holder, at least one first electrode, and at least two second electrodes. The holder holds an ionic liquid, the at least one first electrode is provided in the holder, and receives either a positive or negative direct-current voltage and the at least two second electrodes are provided on portions of the holder where electric double layers in the ionic liquid are formed when the direct-current voltage is applied to the first electrode, and the at least two second electrodes supply a radio-frequency power via the holder.
Owner:TOKYO ELECTRON LTD

Semiconductor-free electric and electronic circuit components

PCT designated stageWO2026111687A1Non-mechanically variable capacitorsMechanically variable capacitorsCeramic capacitorHemt circuits
With this invention, electronic circuit components such as transistors, diodes, zener diodes and varicap diodes, which are conventionally manufactured with semiconductors, can be produced without semiconductors by means of a much simpler and cheaper technology, and by the same technology a compensation capacitor can be manufactured whose capacitance is automatically varied so as to follow changes in the load simultaneously. This principle may also be applied in other areas such as microwaves. In simple terms, the electric and magnetic fields of the main capacitor are blocked by a control voltage and varied between zero and maximum values, and as a result the capacitance of the main capacitor is changed. The fundamental principle here is the control of the electric and magnetic fields between the two conductive plates of a fixed-capacitance capacitor. For this purpose, a control voltage is applied between a third metallic plate, designed as a grid or similar structure so as not to block the electric and magnetic fields of the main capacitor and placed closer to one of the two plates, and the adjacent metallic plate, while a DC voltage (VDD) of suitable value for the circuit is applied across the terminals of the main capacitor. In a slightly different version, two grids are provided so that the structure can be used both as a diode and as a transistor. In both cases, the capacitance value of the main capacitor varies depending on the control voltage, i.e. Co = f(Vi). This means that, similar to classical transistors, the impedance of the circuit varies depending on the control voltage. In this structure, which exhibits behaviour similar to FET transistors, the output voltage is taken across the two outer plates of the capacitor with a design similar to a classical transistor circuit. In the production stage, the dielectric will be formed by coating very thin special plastic or other suitable materials with an appropriate metal of suitable thickness for the design and winding it in roll form. Likewise, dielectric layers may also be formed as very thin oxide or other non-conductive chemical compounds on the surfaces of the metallic 24 plates. That is, use will be made of conventional capacitor technologies such as ceramic, tantalum and electrolytic capacitors. In addition, different methods may be developed depending on the field of application. These designs will find application areas as semiconductor-free transistors, diodes, voltage-controlled variable capacitors, and many other uses, some of which have been explained in this project.
Owner:AY MEHMET GARIP

Variable capacitance element and design method thereof

PCT designated stageWO2026126747A1Non-mechanically variable capacitors
Provided are a variable capacitance element in which the capacitance variation rate can be easily increased and the withstand voltage can be easily increased, and a method for designing such a variable capacitance element. The variable capacitance element (1) includes a conductive film (10), a dielectric layer (20), and a semiconductor layer (30), wherein the semiconductor layer (30) is formed of an oxide semiconductor.
Owner:MURATA MFG CO LTD

Electrically tunable electromagnetic interference shielding devices with two-dimensional transition metal carbides and nitrides (mxenes)

A tunable shielding component, comprising: a first portion of MXene; a second portion of MXene; and a separator disposed between the first portion of MXene and the second portion of MXene, the separator having an electrolyte disposed therein. An electronic device, comprising a tunable shielding component according to the present disclosure. A method, comprising applying a potential to a tunable shielding component according to the present disclosure so as to effect a change in the EMI SE of the tunable shielding component.
Owner:DREXEL UNIV

Variable capacitor and integrated circuit

ActiveUS12477755B2Capacitor with electrode distance variationNon-mechanically variable capacitorsCapacitanceMechanical engineering
A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.
Owner:TDK CORP

Capacitor structure and capacitance value adjusting method of capacitor structure

PendingCN121394183ANon-mechanically variable capacitorsCapacitanceCapacitor
The embodiment of the invention provides a capacitor structure and a capacitance value adjusting method of the capacitor structure. The capacitor structure comprises n conductive structures, the n conductive structures are stacked along a first direction, each conductive structure comprises a first conductive pattern and a second conductive pattern which are arranged along a second direction, and the first conductive pattern and the second conductive pattern in each conductive structure form an interdigital structure; wherein the two first conductive patterns in the two conductive structures which are adjacently arranged in the first direction are at least partially overlapped, and the two second conductive patterns in the two conductive structures which are adjacently arranged in the first direction are at least partially overlapped; the first direction is perpendicular to the second direction, and n is an integer larger than 1.
Owner:HUBEI XINGCHEN TECH CO LTD

Organic-inorganic hybrid reversible phase change material as well as preparation method and application thereof

The invention discloses an organic-inorganic hybrid reversible phase change material as well as a preparation method and application thereof, and belongs to the field of functional materials. According to the organic-inorganic hybrid reversible phase change material, N, N, N-trimethyl isopropylamine and a halogen substituted derivative thereof are used as organic cations, an iron halide anion [FeX] (X = Cl, Br) with a tetrahedral configuration is used as an inorganic anion, and a molecular crystal is prepared through a solution evaporation method. The material is subjected to reversible solid-solid phase change in a mild temperature range (about 330-356 K) close to the working temperature of a device, and is obviously changed along with the dielectric constant in a phase change temperature region. The phase change temperature and the dielectric response behavior can be adjusted by cooperatively regulating and controlling the structure of the organic cation and the type of the inorganic halogen complex anion. The material is mild in preparation method, is suitable for amplification and film processing, and can be used for a dielectric regulation and control structure, a reconfigurable dielectric unit and a packaging layer dielectric function module.
Owner:58TH RES INST OF CETC

Devices and methods for energy harvesting from air humidity

ActiveUS12549114B2Generators/motorsNon-mechanically variable capacitorsEnvironmental engineeringAir humidity
Energy harvesting devices and methods are provided. An energy harvesting device includes an adsorption layer comprising a nanoporous material and at least two electrodes in operative arrangement with the adsorption layer. The nanoporous material comprises a nonbiological nanoporous material, a nonprotein biological nanoporous material, or a combination thereof. The adsorption layer and at least two electrodes are configured to generate a voltage differential on exposure of the adsorption layer to ambient moisture.
Owner:UNIV OF MASSACHUSETTS

Soft sensor

A soft sensor which may be used in robotic grasping applications includes a composite material being reversibly deformable and comprising an elastomer material containing dispersed conductive filler material, wherein the quantity of filler material in the elastomer material is configured to provide a negative change in permittivity of the composite layer upon the composite layer being subjected to a force.
Owner:AUCKLAND UNISERVICES LTD

Devices and methods for improving voltage handling and / or bi-directionality of stacks of elements when connected between terminals

Devices and methods for improving voltage handling and / or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.
Owner:PSEMI CORP