This invention belongs to the field of
wire bonding technology and discloses a bonding method and application of
copper-based bonding wires. The bonding method includes the following steps: depositing a composite
metal interlayer at the bonding location on the
chip; contacting the bonding end of the
copper-based bonding wire with the composite
metal interlayer and performing
ultrasonic bonding to complete the bonding of the
copper-based bonding wire; wherein, in the
ultrasonic bonding step, three sets of ultrasonic power and bonding pressure are applied sequentially, satisfying the following conditions: second ultrasonic power > third ultrasonic power > first ultrasonic power, and second bonding pressure ≥ third bonding pressure > first ultrasonic power. This invention effectively overcomes the technical bottlenecks of easy
chip damage and easy formation of brittle
intermetallic compounds at the bonding interface when copper-based bonding wires are applied to IGBT chips, through the synergistic effect of the composite
metal interlayer and the multi-stage gradient
ultrasonic bonding process. It achieves a high-strength, non-destructive connection between the copper-based bonding wire and the
chip pad, significantly improving the long-term reliability and stability of the bonding interface.