3 results about "Piezoelectric resonators" patented technology

The application relates to the field of semiconductor devices and provides a piezoelectric MEMS resonator and an electronic component. The resonator comprises a cap wafer and a device wafer, the cap wafer comprises a cap layer, and the device wafer comprises: a substrate layer; a resonant cavity arranged on the substrate layer; a device silicon layer located on the upper side of the resonant cavity; a piezoelectric layer located on the upper side of the device silicon layer; a top electrode located on the upper side of the piezoelectric layer; and a first dielectric layer located on the upper side of the top electrode and covering the top electrode, the first dielectric layer is bonded to the cap layer, at least a part of the first dielectric layer bonded to the cap layer projects on the vertical direction and overlaps the projection of the top electrode on the vertical direction, and the upper surface of the at least part of the first dielectric layer bonded to the cap layer is in the same plane. In this way, the bonding properties of the cap wafer and the device wafer are improved by flattening the surface of the dielectric layer covering the top electrode, and a good bonding effect is ensured.

Piezoelectric Resonator The invention relates to a piezoelectric resonator (10), particularly for a power converter, comprising: A piezoelectric layer (20), Two conducting electrodes (30, 40) extending on either side of the piezoelectric layer (20) such that the conducting layer (20) is sandwiched between the two conducting electrodes (30, 40), each conducting electrode (30, 40) being laterally delimited by an edge (35, 45) having a thickness different from that of the corresponding electrode (30, 40), the edges (35, 45) of the two electrodes (30, 40) being substantially symmetrical with respect to each other with respect to a median plane M extending through the midpoint of the piezoelectric layer (20). Figure for the abstract: Fig. 1

A method for manufacturing a micro-electro-mechanical systems (MEMS) platform is provided. The method includes depositing a piezoelectric layer on a first device layer of a first cavity-embedded silicon-on-insulator (SOI) substrate, wherein the first device layer is N-type doped and comprises a first thickness, polarizing the piezoelectric layer according to a desired pattern, bonding a second device layer comprising a second thickness to the piezoelectric layer, wherein the second device layer is N-type doped, and defining a resonator lateral geometry by forming trenches through the second device layer, the piezoelectric layer, and the first device layer.