90 results about "Piezoelectric resonators" patented technology

A piezoelectric device includes a piezoresonator body and a set of electrodes disposed on the piezoresonator body. The piezoresonator body includes a bulk region and a contact element integral with and protruding from the bulk region, and further includes opposing first and second surfaces. A pair of excitation electrodes are disposed on the first surface. A common electrode is disposed on the second surface. The piezoresonator body is characterized by a longitudinal axis and a transverse axis, and further characterized by a natural resonant frequency (v1) of first-order longitudinal standing vibrations along the transverse axis and a natural resonant frequency (v2) of second-order bending standing vibrations along the longitudinal axis, with v1 < v2 ≤ 1.1v1.

The invention relates to a piezoelectric resonator, which belongs to the technical field of micro electro mechanical systems, and comprises a resonant body on which micropore structures are periodically arranged; the resonant body is fixed on the substrate, and a cavity or an acoustic reflecting layer is arranged between the substrate and the resonant body; wherein the micropore structure and part of the resonance body around the micropore structure form an in-plane coupling unit which is used for exciting the coupling mode of the resonator. Compared with the prior art, the in-plane coupling units arranged in the x-y plane of the resonator can excite transverse modes in the x-axis direction and the y-axis direction at the same time, an in-plane two-dimensional transverse coupling mode is formed, and the transverse coupling mode is the basis for achieving the photoetching tuning characteristic of the resonator. Appropriate sizes and in-plane arrangement of the in-plane coupling units are defined through a photoetching process, and the resonant frequency of the resonator can be adjusted in a wide frequency band range.

A piezoelectric vibration element includes a piezoelectric piece having a main surface; an excitation electrode disposed on the main surface of the piezoelectric piece; and a connection electrode disposed on the main surface of the piezoelectric piece and electrically connected to the excitation electrode, wherein when the main surface of the piezoelectric piece is viewed in a plan, the piezoelectric piece has a through-hole in an area between the excitation electrode and the connection electrode, and wherein an internal wall of the through-hole located closer to the excitation electrode has at least four slopes.

A load sensor that includes: an upper housing having an upper face portion, and a lateral face portion that extends in the thickness direction from an outer periphery of the upper face portion; a lower housing having a lower face portion that faces the upper face portion in the thickness direction, the lower housing being less elastically deformable than the upper housing; and a piezoelectric resonator in a space between the upper housing and the lower housing, wherein an end portion of the upper housing and an end portion of the lower housing are fixed to each other with a crimp such that the upper housing is elastically deformed and causes a preload to be applied by the upper housing to the piezoelectric resonator in the thickness direction.

The utility model provides a printing head, a printing device and dyeing equipment. The printing head comprises a base, a nozzle array assembly, an ink supply assembly and a power supply assembly. The nozzle array assembly comprises a nozzle array composed of a plurality of nozzles, and a fixing assembly used for fixing the nozzle array. Each spray head comprises a metal sheet, a spray needle and a piezoelectric resonator; the base is provided with a through hole array matched with the spray head array, the spray head array assembly is fixed to the base so that the spray head array can directly face the through hole array, and each spray head in the spray head array can be contained in one through hole in the through hole array; the ink supply assembly is fixed to the base, and an ink outlet of the ink supply assembly communicates with the ink inlet end of the spray needle of each spray head and is used for supplying ink to the spray needle. The output end of the power supply assembly is connected with the piezoelectric resonators on the sprayers, and the power supply assembly is used for providing electric signals for the piezoelectric resonators. The printing head, the printing device and the dyeing equipment provided by the utility model are used for finishing large-breadth printing and dyeing with high quality.

A piezoelectric Micro-Electro-Mechanical Systems (MEMS) resonator employs a thin-film piezoelectric layer as an anchor, which eliminates a dominant loss source, anchor loss, which stems from the irreversible mechanical energy radiation through the anchors. By implementing fundamental or higher-order thickness Lame modes (TLMs) in the thickness direction, the piezoelectric resonator exhibits a substantial reduction of thermoelastic damping (TED) and increase of anchor quality factor. The piezoelectric resonator also provides temperature stability by utilizing a substrate with a turnover temperature, minimizing deviation on resonance frequency. This approach enables the use of thin-film piezoelectric materials as anchors, which can be precisely controlled to minimize losses. The piezoelectric resonator's compact design and CMOS-compatibility make it suitable for batch production at a minimal cost per unit. Furthermore, the highly frequency-stable temperature point of the piezoelectric resonator can be used for implementing oven-controlled oscillators for ultra-stable clock generation in various applications.

A packaged integrated circuit (IC) includes a package substrate having opposing first and second surfaces. The package substrate includes first and second metal pads on the first surface, third metal pads on the second surface, and metal interconnects coupled between the third metal pads and at least some of the first and second metal pads. A semiconductor die is on the first surface and is coupled to the first metal pads. Metal support structures are on the first surface and are coupled to a at least some of the second metal pads. A piezoelectric resonator is on the metal support structures and over the semiconductor die. A cap is on the package substrate and covers the piezoelectric resonator, the metal support structures, and the semiconductor die.

The invention relates to the field of semiconductor devices and provides a piezoelectric MEMS resonator and an electronic component. The resonator comprises a cap wafer and a device wafer, the cap wafer comprises a cap layer, and the device wafer comprises a substrate layer; the resonance cavity is arranged on the substrate layer; the device silicon layer is positioned on the upper side of the resonant cavity; the piezoelectric layer is positioned on the upper side of the device silicon layer; the top electrode is positioned on the upper side of the piezoelectric layer; the first dielectric layer is located on the upper side of the top electrode and covers the top electrode, the first dielectric layer is in bonding connection with the cap layer, and the projection of at least one part, bonded with the cap layer, of the first dielectric layer in the vertical direction is overlapped with the projection of the top electrode in the vertical direction; and at least the upper surface of the part, bonded with the cap layer, of the first dielectric layer is in the same plane. Therefore, the bonding characteristics of the cap wafer and the device wafer are improved by flattening the surface of the dielectric layer covering the top electrode, and a good bonding effect is ensured.

The invention provides a packaging structure for a piezoelectric MEMS resonator and an electronic component, and belongs to the field of semiconductor devices.The packaging structure comprises a device wafer, a cap wafer, a first insulating layer and a metal layer, and the first insulating layer and the metal layer are arranged on the cap wafer. The substrate layer comprises a substrate area and a first resonance cavity area surrounded by the substrate area; the device silicon layer, the first dielectric layer, the piezoelectric layer and the top electrode layer are arranged on the substrate layer; the cap wafer comprises a cap layer; the first annular isolation groove is formed in the cap layer, and the first annular isolation groove is filled with a second dielectric layer; wherein the surface, bonded with the cap wafer, of the device wafer is the surface, far away from the substrate layer, of the device silicon layer, the surface, bonded with the device wafer, of the cap wafer is the surface, far away from the first insulating layer, of the cap layer, and the cap layer is made of low-resistance monocrystalline silicon. According to the packaging structure, the packaging vacuum degree can be effectively improved, and the working performance of the resonator is improved.

A dc-dc converter can include a plurality of switches, a piezoelectric resonator (PR) for power stage energy storage, and a means for controlling one or more switching sequences. The switches operate in accordance with the switching sequences to transfer energy from the input to the output via the PR while providing low-loss resonant soft-charging of the PR's capacitance. The switching sequences include: connected stages in which a first and second PR terminals are both connected to one of the input, the output, or the other PR terminal; and open stages in which at least one of the first or second PR terminal is not connected by a closed switch to one of the input, the output, or the other PR terminal.

A crystal resonator plate according to one or more embodiments may include: a vibrating part; an external frame part surrounding the outer periphery of the vibrating part; and a support part connecting the vibrating part to the external frame part. A first excitation electrode is formed on a first main surface of the vibrating part. A second excitation electrode is formed on a second main surface of the vibrating part. The second excitation electrode includes a pair of parallel sides parallel to each other. The first excitation electrode includes protruding parts that protrude outward from a part between the parallel sides the second excitation electrode in plan view. The protruding parts each have an outer edge shape that is not along the parallel sides in plan view.

The invention discloses a crystal oscillator production method, and relates to the field of crystal oscillators, and the crystal oscillator production method comprises the following steps: providing a substrate, a porous plate, a top plate and a plurality of piezoelectric resonators; a plurality of through holes are formed in the porous plate; the lower end of the perforated plate is fixedly connected with the upper end of the base plate; the plurality of piezoelectric resonators are fixedly mounted at the upper end of the substrate before or after the porous plate is fixedly connected with the substrate and are electrically connected with the substrate; the piezoelectric resonators and the through holes are arranged in a one-to-one correspondence manner, so that the plurality of piezoelectric resonators are respectively and correspondingly accommodated in the plurality of through holes; and segmenting a structure formed by the substrate, the porous plate, the piezoelectric resonance body and the top plate according to preset shapes and intervals to obtain a plurality of single crystal oscillators. The technology provided by the invention can realize batch production of crystal oscillators, and can be suitable for production of crystal oscillators made of various different materials.

An apparatus for detecting a position of a wafer includes a plurality of lift pins disposing the wafer on a support stand and a plurality of piezoelectric resonators at lower portions of the plurality of lift pins, respectively, wherein at least one first piezoelectric resonator among the plurality of piezoelectric resonators is configured to vibrate a corresponding lift pin of the plurality of lift pins, at least one second piezoelectric resonator among the plurality of piezoelectric resonators is configured to detect a resonant frequency of a combined structure including the wafer and the plurality of lift pins, the resonant frequency corresponding to the vibration, and the apparatus further includes a controller configured to determine the position of the wafer according to a change in the resonant frequency.

The invention relates to the technical field of oil and gas field development, and discloses a linkage type intelligent opening system for intelligent fracturing sliding bushings and a control method thereof.The system comprises the multiple intelligent fracturing sliding bushings internally provided with multi-dimensional coding response units; the multi-dimensional coding response unit comprises a micro piezoelectric resonator array, the micro piezoelectric resonator array is composed of a plurality of piezoelectric crystals with inherent acoustic resonant frequencies, and acoustic fingerprint codes of the intelligent fracturing sliding sleeve are formed by the set combination of the inherent acoustic resonant frequencies of the piezoelectric crystals; and the micro magnetostriction exciter has the optimal response frequency sensitive to the alternating magnetic field with the set frequency, and the optimal response frequency forms a magnetic field response code of the intelligent fracturing sliding sleeve. By compounding the acoustic fingerprint codes and the magnetic field response codes, opening of the intelligent fracturing sliding sleeve does not respond to interference of a single underground field source, such as sound waves or magnetic field fluctuation without specific codes, so that the unexpected opening probability is reduced, and the specificity of target selection is improved.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

To provide a piezoelectric resonator which can resist high electromagnetic fields while keeping the energy consumption and volume reduced.SOLUTION: A piezoelectric resonator, in particular for a rotary piezoelectric motor, includes a stationary base 3 and an oscillating mass 2 extending about a longitudinal axis. The oscillating mass is provided with at least one inertia-block 4, preferably two opposing inertia-blocks. The piezoelectric resonator includes a flexible blade guide connecting the oscillating mass to the base, so that the oscillating mass can be oscillated about a center of rotation in a pendulum movement. The flexible blade guide includes: a first flexible blade 6 connected to the base and / or to the oscillating mass to allow the displacement of the oscillating mass relative to the base; and a spiral spring 5 connected to the base and / or to the oscillating mass. The spiral spring includes at least partially an electrically actuatable piezoelectric material to thereby deform the spiral spring and oscillate the oscillating mass.SELECTED DRAWING: Figure 1

A piezoelectric resonator includes a piezoelectric element having a first surface and a second surface on an opposite side of the piezoelectric element from the first surface, a first set of electrodes electrically connected to the first surface, the first set of electrodes comprising one or more electrodes of a first polarity alternating with electrodes of a second polarity in a first sequence, and a second set of electrodes electrically connected to the second surface, the second set of electrodes comprising one or more electrodes of a first polarity alternating with electrodes of a second polarity in a second sequence opposite of the first sequence, the energizing of the electrodes causing the piezoelectric element operate in an overtone resonant mode.

The present application relates to the field of semiconductor devices, and provides a piezoelectric MEMS resonator and an electronic element. The resonator comprises a cap wafer and a device wafer. The cap wafer comprises a cap layer. The device wafer comprises: a substrate layer; a resonant cavity, which is arranged in the substrate layer; a device silicon layer, which is located on the resonant cavity; a piezoelectric layer, which is located on the device silicon layer; a top electrode, which is located on the piezoelectric layer; and a first dielectric layer, which is located on the top electrode and covers the top electrode, wherein the first dielectric layer is in bonding connection with the cap layer, and the projection of at least one part of the first dielectric layer bonded to the cap layer in a vertical direction overlaps with the projection of the top electrode in the vertical direction, and the upper surface of the part, at least bonded to the cap layer, of the first dielectric layer is in the same plane. By means of the present application, the bonding characteristics of a cap wafer and a device wafer are improved by planarizing the surface of a dielectric layer covering a top electrode, thereby ensuring a good bonding effect.

An apparatus for detecting a position of a wafer includes a plurality of lift pins for disposing the wafer on a support bracket, and a plurality of piezoelectric resonators at lower portions of the plurality of lift pins, respectively, at least one first piezoelectric resonator of the plurality of piezoelectric resonators is configured to vibrate a corresponding lift pin of the plurality of lift pins, and at least one second piezoelectric resonator of the plurality of piezoelectric resonators is configured to detect a resonant frequency of a combined structure including the wafer and the plurality of lift pins, the resonant frequency corresponds to the vibration, and the apparatus further includes a controller configured to determine a position of the wafer as a function of a change in the resonant frequency.

The present invention is a crystal vibrator (100) provided with: a crystal vibration plate (10) having a first excitation electrode (111) and a second excitation electrode (112) paired with the first excitation electrode (111); and a first sealing member (20) and a second sealing member (30) that cover both main surfaces of the crystal vibration plate (10), wherein the first sealing member (20) and the crystal vibration plate (10) are joined and the second sealing member (30) and the crystal vibration plate (10) are joined so that a vibration part (11) including the first excitation electrode (111) and the second excitation electrode (112) is hermetically sealed, the first sealing member (20) is provided with a thin-film thermistor (500) on a second main surface (202) facing the vibration part (11), and a through-hole penetrating from a first main surface (201) to the second main surface (202) is not provided.

A sensing sensor module and a sensor module heat dissipation structure are provided. The sensing sensor module includes a piezoelectric oscillation portion in which a reaction electrode to which a target substance in a gas adheres and a reference electrode to which the target substance does not adhere are disposed on a sensor substrate as a piezoelectric resonator, a cooling element, and a supporting member. The cooling element cools the piezoelectric oscillation portion. The supporting member supports the cooling element. The supporting member has a center portion at which the cooling element is arranged and a flange-shaped base portion that has a circular ring shape and extends outward in a radial direction of the circular ring around the center portion. The base portion dissipates heat from the center portion.

The invention provides a piezoelectric vibrating piece and a piezoelectric vibrator using the piezoelectric vibrating piece. The piezoelectric vibrating piece can suppress the occurrence of defects caused by discharge between electrodes. The crystal resonator element includes: a crystal piece having a pair of main surfaces; an excitation electrode provided on the main surface; and an extraction electrode that is extracted from the excitation electrode. The main surface includes a first main surface and a second main surface facing the first main surface, and the excitation electrodes include a first excitation electrode provided on the first main surface and a second excitation electrode provided on the second main surface. The extraction electrodes include a first extraction electrode extracted from the first excitation electrode and a second extraction electrode extracted from the second excitation electrode. The crystal piece includes a creepage distance expansion portion that expands the creepage distance between the first excitation electrode and the second extraction electrode and / or the creepage distance between the second excitation electrode and the first extraction electrode.

The invention discloses a resonator based on a periodically polarized piezoelectric film, and belongs to the technical field of piezoelectric resonators. The resonator comprises a substrate, a periodically polarized piezoelectric film and an interdigital transducer. The substrate is a POI substrate, an SMR type substrate or a substrate structure with a cavity at the bottom; the periodic polarization piezoelectric film is formed by laminating at least two layers of piezoelectric films with opposite polarization directions, and a 180-degree phase difference exists between the adjacent layers; the interdigital transducer is arranged on the upper surface of the piezoelectric film, and electrode materials comprise one or more of titanium Ti, aluminum Al, copper Cu, gold Au, platinum Pt and silver Ag. According to the invention, the working frequency is effectively expanded on the premise of not sacrificing the thickness of the piezoelectric layer through the periodic polarization laminated structure, the quality factor Q value and the electromechanical coupling coefficient K2 are remarkably improved, the problem of performance degradation caused by thin film thinning of the high-frequency resonator is solved, and the high-frequency resonator is particularly suitable for the fields of millimeter wave communication, filters and sensors.

A sensing sensor includes a piezoelectric oscillation portion in which a reaction electrode to which a target substance in a gas adheres and a reference electrode to which the target substance does not adhere are disposed on a sensor substrate as a piezoelectric resonator, an exterior cover that has an opening portion through which the gas passes and covers the piezoelectric oscillation portion, and a support substrate that supports the piezoelectric oscillation portion. The sensor substrate is mounted on the support substrate such that the reaction electrode is opposed to the opening portion, and a temperature sensor is arranged on an opposite side surface of a surface on which the reaction electrode and the reference electrode are disposed.

A packaged integrated circuit (IC) includes a package substrate having first and second opposing surfaces. The package substrate includes first and second metal pads on the first surface, third metal pads on the second surface, and metal interconnects connected between the third metal pads and at least some of the first and second metal pads. A semiconductor die is disposed on the first surface and coupled to the first metal pads. Metal support structures are disposed on the first surface and coupled to at least some of the second metal pads. A piezoelectric resonator is disposed on the metal support structures and over the semiconductor die. A cap is disposed on the package substrate and covers the piezoelectric resonator, the metal support structures, and the semiconductor die.

A system, method, and device for driving a converter including two input terminals, two output terminals, a piezoelectric resonator, and a plurality of switches connected to the resonator, a first switch being connected between an input terminal and the resonator and switchable between an open position and a closed position where an input voltage is applied to the resonator. The device includes a module for measuring an output variable, a module for controlling a switching of the switches to alternate phases with a substantially constant voltage and a substantially constant load at the terminals of the resonator, and a module for detecting a characteristic event dependent on the output variable. In the event of detection of the event, the control module commands the first switch into the open position for the duration of at least one resonance cycle.

To provide a piezoelectric device capable of securing reliability and electrical characteristics while reducing stray capacitance inside a package.SOLUTION: A piezoelectric resonator device includes a package having a bottom plate having a rectangular shape in a plan view and a wall portion provided along an edge of the bottom plate, an IC chip mounted in an inner region surrounded by the wall portion, and a piezoelectric resonator connected to a piezoelectric resonator connecting terminal provided on an upper surface of the IC chip, wherein the piezoelectric resonator protrudes from the upper surface of the IC chip toward the wall portion in a plan view, and an excitation electrode included in an electrode pattern formed on the piezoelectric resonator faces only the package in a plan view.SELECTED DRAWING: Figure 2

Provided is a piezoelectric vibration device that exhibits excellent reliability by preventing a sealing plate of the piezoelectric vibration device from cracking in a case where an external electronic component element is joined by a metal bump to the sealing plate.　Six sealing plate-connection electrode parts are arranged on the lower surface of an IC chip (the electronic component element), and six electronic component element-connection electrode parts 37a-37f to which the sealing plate-connection electrode parts of the IC chip are respectively connected are arranged in an electrode pattern 37 on the upper surface, not facing a piezoelectric vibration plate 2, of a first sealing member (an upper sealing plate) 3. Metal bumps are used to respectively join together the six sealing plate-connection electrode parts of the IC chip and the six electronic component element-connection electrode parts 37a-37f of the upper sealing plate 3. At this time, one of the metal bumps has no electrical connection function and only a mechanical joining function, and the remaining metal bumps have an electrical connection function.

This disclosure provides methods, devices, and systems for generating clock signals. The present implementations more specifically relate to generating multiple clock signals having different frequencies using a single piezoelectric resonator. In some aspects, a clock generator, including a piezoelectric resonator coupled to a voltage amplifier in a feedback network, may be operable in a high-performance mode and a low-power mode. When operating in the high-performance mode, the clock generator may produce a high frequency clock signal and a low frequency clock signal using the same piezoelectric resonator. In some implementations, the high frequency clock signal may be produced by a buffer amplifier coupled to an output of the voltage amplifier and the low frequency clock signal may be produced by a frequency divider coupled to the output of the voltage amplifier. When operating in the low-power mode, the clock generator produces only the low-frequency clock signal via the frequency divider.