18 results about "Piezoelectric resonators" patented technology

To provide a piezoelectric device capable of securing reliability and electrical characteristics while reducing stray capacitance inside a package.SOLUTION: A piezoelectric resonator device includes a package having a bottom plate having a rectangular shape in a plan view and a wall portion provided along an edge of the bottom plate, an IC chip mounted in an inner region surrounded by the wall portion, and a piezoelectric resonator connected to a piezoelectric resonator connecting terminal provided on an upper surface of the IC chip, wherein the piezoelectric resonator protrudes from the upper surface of the IC chip toward the wall portion in a plan view, and an excitation electrode included in an electrode pattern formed on the piezoelectric resonator faces only the package in a plan view.SELECTED DRAWING: Figure 2

This disclosure provides methods, devices, and systems for generating clock signals. The present implementations more specifically relate to generating multiple clock signals having different frequencies using a single piezoelectric resonator. In some aspects, a clock generator, including a piezoelectric resonator coupled to a voltage amplifier in a feedback network, may be operable in a high-performance mode and a low-power mode. When operating in the high-performance mode, the clock generator may produce a high frequency clock signal and a low frequency clock signal using the same piezoelectric resonator. In some implementations, the high frequency clock signal may be produced by a buffer amplifier coupled to an output of the voltage amplifier and the low frequency clock signal may be produced by a frequency divider coupled to the output of the voltage amplifier. When operating in the low-power mode, the clock generator produces only the low-frequency clock signal via the frequency divider.

The application relates to the field of semiconductor devices and provides a piezoelectric MEMS resonator and an electronic component. The resonator comprises a cap wafer and a device wafer, the cap wafer comprises a cap layer, and the device wafer comprises: a substrate layer; a resonant cavity arranged on the substrate layer; a device silicon layer located on the upper side of the resonant cavity; a piezoelectric layer located on the upper side of the device silicon layer; a top electrode located on the upper side of the piezoelectric layer; and a first dielectric layer located on the upper side of the top electrode and covering the top electrode, the first dielectric layer is bonded to the cap layer, at least a part of the first dielectric layer bonded to the cap layer projects on the vertical direction and overlaps the projection of the top electrode on the vertical direction, and the upper surface of the at least part of the first dielectric layer bonded to the cap layer is in the same plane. In this way, the bonding properties of the cap wafer and the device wafer are improved by flattening the surface of the dielectric layer covering the top electrode, and a good bonding effect is ensured.

The invention provides a resonant gas sensor and a manufacturing method thereof. The resonant gas sensor comprises a detection light source used for generating detection light capable of being absorbed by gas to be detected; the detection cavity is arranged on a light path of the detection light; the cavity wall, opposite to one side of the detection light source, of the detection cavity is made of a material which is transparent relative to detection light, the detection cavity is communicated with a detection environment through a through hole so as to obtain to-be-detected target gas in the detection environment, and a piezoelectric resonator capable of changing the resonance state along with the change of environment sound pressure is arranged in the detection cavity. According to the invention, two substrates are adopted to respectively manufacture different structures and are assembled through bonding. And the processes of the key structures are independent from each other and cannot influence each other when different structures are manufactured, so that the process stability is high. The sensor structure adopts a photoacoustic signal mode, the detection sensitivity is high, the response speed is high, and the detection range is large. And the detection cavity does not contain any material for absorbing the detected gas, so that timely response can be performed when the concentration is changed, and the situation of signal lag caused by gas residue is avoided.

A piezoelectric resonator (10) is provided with: a polarization-reversal piezoelectric laminate (11) in which ten or more piezoelectric layers (111, 112) are laminated such that the orientation of components of polarization in a direction parallel or perpendicular to the in-plane direction of the layers is alternately reversed, the piezoelectric layers (111, 112) each comprising a piezoelectric body and having substantially equal fundamental resonance frequencies, which are values obtained by dividing the sound velocity by two times the thickness; a pair of electrodes (121, 122) provided so as to sandwich the polarization-reversal piezoelectric laminate (11) from both sides in the lamination direction; and a support body (13) that supports one electrode (122) of the pair of electrodes (121, 122).

The invention belongs to the technical field of microelectronics and acoustic electronics, and particularly relates to a piezoelectric resonator and a manufacturing process thereof.The piezoelectric resonator comprises a silicon substrate, and a hollow cavity is formed in the silicon substrate; the resonator main body is fixedly mounted on the top surface of the silicon substrate and comprises a first metal electrode layer, a piezoelectric material layer and a second metal electrode layer which are sequentially stacked from bottom to top, and the resonator main body further comprises a resonator core. According to the invention, a series of processes such as SON process, thin film deposition, etching and silicon epitaxy are used for construction, a vacuum chamber can be formed without a bonding process, low-cost manufacturing, high Q value (quality factor) and simplified packaging process are realized by combining the structural design of high-vacuum packaging and adaptive flip packaging, and meanwhile, the hollow cavity formed by the SON process is used for effectively reducing sound wave crosstalk, so that the packaging quality is improved. The problems that a traditional piezoelectric resonator depends on a bonding technology, so that the cost is high, the Q value is affected by insufficient vacuum degree, the packaging adaptability is poor, and sound wave crosstalk occurs are solved, and remarkable technical and industrialization advantages are achieved.

The utility model relates to a miniaturized quartz piezoelectric resonant mechanical sensor, which comprises a flexible substrate, a miniaturized sensing unit and a processing IC, the upper end and the lower end of the flexible substrate are respectively provided with the processing IC and the miniaturized sensing unit, the miniaturized sensing unit comprises a cover plate, a rigid supporting body and a quartz chip, the rigid supporting body is provided with a cavity, and the quartz chip is arranged in the cavity. A circle of step structure is arranged at the lower port of the cavity along the edge, a quartz chip is installed on the step structure and communicated with the processing IC, and a cover plate covering the quartz chip is installed at the bottom of the rigid bearing body. According to the utility model, the quartz chip is arranged inside the miniaturized sensing unit, and the rigid carrier is used as a bearing unit of the quartz frequency chip, so that the quartz frequency chip can be in mechanical contact with the outside to transfer mechanical energy, and the mechanical energy is concentrated to the center of the quartz chip, so that the basic frequency is changed, and the generated frequency difference value is gradually increased; and a linear relation is formed with an external mechanical increment, so that a mechanical sensing effect is achieved.

The embodiment of the invention provides a piezoelectric antenna, a preparation method and an electronic device. The piezoelectric antenna comprises a piezoelectric layer, a piezoelectric resonator and an external radiator. The piezoelectric resonator is arranged on the first surface of the piezoelectric layer and comprises a first terminal, a resonance electrode, a second terminal and at least one ground loop, the first terminal is electrically connected with the resonance electrode and is configured to apply alternating voltage generated by an input radio frequency signal to the resonance electrode, the resonance electrode is surrounded by the at least one ground loop, and the second terminal is electrically connected with the resonance electrode. The first terminal is configured to excite the piezoelectric layer to generate acoustic resonance under the action of alternating voltage, the second terminal is electrically connected with the resonance electrode and configured to output current generated by the piezoelectric layer on the resonance electrode, and the external radiator is electrically connected with the second terminal and configured to conduct the current to radiate electromagnetic waves. According to the piezoelectric antenna provided by the embodiment of the invention, the size of the radiation aperture can be expanded to one hundredth to one tenth of the electromagnetic wave wavelength magnitude, the radiation performance is improved, and the actual requirement is met.

Piezoelectric Resonator The invention relates to a piezoelectric resonator (10), particularly for a power converter, comprising: A piezoelectric layer (20), Two conducting electrodes (30, 40) extending on either side of the piezoelectric layer (20) such that the conducting layer (20) is sandwiched between the two conducting electrodes (30, 40), each conducting electrode (30, 40) being laterally delimited by an edge (35, 45) having a thickness different from that of the corresponding electrode (30, 40), the edges (35, 45) of the two electrodes (30, 40) being substantially symmetrical with respect to each other with respect to a median plane M extending through the midpoint of the piezoelectric layer (20). Figure for the abstract: Fig. 1

A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and / or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.

The utility model relates to the technical field of communication, and provides a frequency conversion circuit, a wireless tag circuit, a device and a system. The frequency conversion circuit is used for receiving a downlink radio frequency signal and sending an uplink frequency conversion signal, and comprises an impedance changing module, an impedance conversion module and a frequency conversion module, the impedance conversion module is electrically connected with the impedance changing module and the frequency conversion module. The impedance changing module can be switched between different first impedance values; the impedance conversion module receives an input downlink radio frequency signal and performs impedance conversion on the first impedance value to obtain a second impedance value; the frequency conversion module comprises a modulation element, a first inductor and a passive piezoelectric resonator. According to the utility model, the frequency conversion circuit is improved, so that the uplink and downlink frequency conversion transmission is realized, the circuit cost is further reduced, the requirement on the power sensitivity of the frequency conversion circuit can be reduced, and the application scene of the Internet of Things of the wireless tag terminal is further expanded.

This invention relates to the field of oil and gas field development technology, and discloses a linkage-type intelligent opening system and control method for intelligent fracturing sleeves. The system includes: multiple intelligent fracturing sleeves, each internally equipped with a multi-dimensional coded response unit; each multi-dimensional coded response unit includes: a micro piezoelectric resonator array composed of multiple piezoelectric crystals with inherent acoustic resonant frequencies, the set combination of the inherent acoustic resonant frequencies of the piezoelectric crystals constituting the acoustic fingerprint encoding of the intelligent fracturing sleeve; and a micro magnetostrictive exciter having an optimal response frequency sensitive to an alternating magnetic field of a set frequency, the optimal response frequency constituting the magnetic field response encoding of the intelligent fracturing sleeve. By combining the acoustic fingerprint encoding and the magnetic field response encoding, the opening of the intelligent fracturing sleeve is not responsive to interference from a single downhole field source, such as acoustic or magnetic field fluctuations without specific encoding, thereby reducing the probability of unintended opening and improving the specificity of target selection.

The invention provides a gas sensor and a manufacturing method thereof. The sensitivity of the gas sensor can be improved. The gas sensor comprises a detection light source used for generating detection light capable of being absorbed by gas to be detected; the detection cavity and the resonant cavity are sequentially arranged on a light path of the detection light; the cavity wall of the detection cavity is made of a material which is transparent relative to the detection light and is communicated with the detection environment through the through hole so as to obtain to-be-detected target gas in the detection environment; the resonant cavity body is filled with target gas with known concentration capable of absorbing the detection light source, and is provided with a piezoelectric resonator capable of generating resonance along with the change of environmental sound pressure. According to the invention, three substrates are adopted to respectively manufacture different structures and are assembled through bonding. And the processes of the key structures are independent from each other and cannot influence each other when different structures are manufactured, so that the process stability is high. The sensor structure adopts a photoacoustic signal mode, the detection sensitivity is high, the response speed is high, and the detection range is large. And the detection cavity does not contain any absorption material for the detected gas, so that timely response can be performed when the concentration is changed, and the situation of signal lag caused by gas residue is avoided. In addition, the target gas with known concentration is used for gas selection, so that expensive components such as an optical filter, a laser and the like are avoided, and the gas sensor with low cost and high integration can be realized.

A method for manufacturing a micro-electro-mechanical systems (MEMS) platform is provided. The method includes depositing a piezoelectric layer on a first device layer of a first cavity-embedded silicon-on-insulator (SOI) substrate, wherein the first device layer is N-type doped and comprises a first thickness, polarizing the piezoelectric layer according to a desired pattern, bonding a second device layer comprising a second thickness to the piezoelectric layer, wherein the second device layer is N-type doped, and defining a resonator lateral geometry by forming trenches through the second device layer, the piezoelectric layer, and the first device layer.

The utility model discloses a crystal oscillator relates to the field of crystal oscillator, including upper cover, frame, piezoelectric resonator and base, frame is provided with through -hole, and the opposite two ends of frame are fixedly connected with upper cover and base respectively to form the closed mounting space for installing piezoelectric resonator at through -hole, and piezoelectric resonator is fixedly installed in the closed mounting space, the utility model patent is through optimizing crystal structure, has improved the production efficiency of crystal oscillator.

The application provides a piezoelectric resonator, which comprises a bottom electrode, a piezoelectric layer, a top electrode, an acoustic wave reflection layer structure and a top electrode lead-out structure; the piezoelectric layer is stacked on the bottom electrode; the top electrode is stacked on the side of the piezoelectric layer away from the bottom electrode; the acoustic wave reflection layer structure is formed on the side of the bottom electrode away from the piezoelectric layer; and the top electrode lead-out structure is located on the side of the piezoelectric layer away from the bottom electrode; the space region formed by the bottom electrode, the piezoelectric layer, the top electrode and the acoustic wave reflection layer structure is defined as a resonance region; the top electrode lead-out structure is connected with the top electrode in the resonance region and extends from the resonance region to the outside of the resonance region, and the top electrode lead-out structure overlaps with the part of the top electrode which is orthogonally projected to the piezoelectric layer; and the application further provides a manufacturing method of the piezoelectric resonator; compared with the related art, the piezoelectric resonator manufacturing method can reduce the influence of the growth defects of the piezoelectric layer on the performance of the device, so that the piezoelectric resonator structure has a higher quality factor Q and a higher effective electromechanical coupling coefficient.

A method is provided to measure viscosity of an analyte using a microfluidic piezoelectric sensor including a channel on an active area of a piezoelectric resonator substrate. The microfluidic piezoelectric sensor is driven so that the active area of the piezoelectric resonator substrate generates shear motion in a direction of shear motion displacement that is parallel with respect to a first surface of the piezoelectric resonator substrate. A high shear-rate viscosity of the analyte is determined based on a shift in resonance of the microfluidic piezoelectric sensor while driving the microfluidic piezoelectric sensor with the analyte in the channel. A low shear-rate viscosity of the analyte is determined by detecting flow of the analyte through the channel based on tracking shifts in resonance of the microfluidic piezoelectric sensor. Related sensors are also discussed.

In conclusion, the embodiment of the invention provides a large-bandwidth piezoelectric micro-mechanical ultrasonic transducer array and a preparation method, and the large-bandwidth piezoelectric micro-mechanical ultrasonic transducer array comprises a substrate, a plurality of piezoelectric micro-mechanical ultrasonic transducers, a plurality of piezoelectric micro-mechanical ultrasonic transducers, a plurality of piezoelectric micro-mechanical ultrasonic transducers and a plurality of piezoelectric micro-mechanical ultrasonic transducers, the plurality of piezoelectric resonance units are positioned on the substrate; the plurality of piezoelectric resonance units form an array structure; each channel in the array structure comprises a plurality of vibrating diaphragm elements, the piezoelectric resonators in the array structure are divided into at least two groups, and the piezoelectric resonators in different groups have different structure parameters; and the piezoelectric layer of the array structure is polarized by a direct-current electric field with preset polarity. Bandwidth expansion is realized through frequency response superposition of different resonators, and the limitation that a traditional single-frequency PMUT is small in bandwidth and a multi-frequency PMUT easily sacrifices sensitivity is broken through. And meanwhile, the piezoelectric layer is subjected to direct-current electric field polarization treatment with preset polarity, so that the internal characteristics of the piezoelectric layer are optimized to improve the piezoelectric response.