47 results about "Acoustic mirror" patented technology

A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).

A stacked acoustic wave device assembly is disclosed. The stacked acoustic wave device assembly can include a first acoustic wave device including a first double acoustic mirror structure having a first solid acoustic mirror and a second solid acoustic mirror, and a first piezoelectric layer between the first and second solid acoustic mirrors. The stacked acoustic wave device assembly can include a second acoustic wave device including a second double acoustic mirror structure having a third solid acoustic mirror and a fourth acoustic mirror, and a second piezoelectric layer between the third and fourth acoustic mirrors. The second acoustic wave device is vertically stacked on the first acoustic wave device such that the second solid acoustic mirror and the fourth solid acoustic mirror are positioned between the first and second piezoelectric layers.

A stacked acoustic wave device assembly is disclosed. The stacked acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is in contact with the first piezoelectric layer. The stacked acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, and a second interdigital transducer electrode that is in contact with the second piezoelectric layer. The second acoustic wave device is stacked over the first acoustic wave device. The first acoustic wave device and the second acoustic wave device are spaced by a spacer assembly such that a cavity is formed between the first acoustic wave device and the second acoustic wave device.

The application provides a resonator, a filter, an electronic device and a manufacturing method of the resonator. The resonator comprises a substrate, a sandwich electrode, an acoustic mirror, a bottom electrode structure, a piezoelectric layer and a top electrode, the bottom electrode structure and the sandwich electrode are collectively arranged outside the acoustic mirror, the sandwich electrode and the bottom electrode structure are connected and conductive to each other, the bottom electrode structure comprises a seed layer, a first bottom electrode layer and a second bottom electrode layer, the first bottom electrode layer is formed on the seed layer, and the second bottom electrode layer is formed on the first bottom electrode layer and covers the first bottom electrode layer; and the overlapping parts of the acoustic mirror, the bottom electrode structure, the piezoelectric layer and the top electrode collectively form an effective area of the resonator. The application has good resonator performance.

Provided is an acoustic resonator in a transverse excitation shear mode. The acoustic resonator comprises: an acoustic mirror (120), which comprises at least one first acoustic reflecting layer (121, 123, 125) and at least one second acoustic reflecting layer (122, 124), wherein the acoustic impedance of each first acoustic reflecting layer is less than that of each second acoustic reflecting layer; a piezoelectric layer (130), which is arranged on the acoustic mirror, and which comprises lithium niobate of a single crystal material and / or lithium tantalate of a single crystal material; electrode units (142, 143, 144), which are arranged on the piezoelectric layer (130) and are used for forming an electric field; and transverse reflectors (152, 154), which are arranged on the piezoelectric layer, are used for transversely reflecting acoustic waves, and can have a high electromechanical coupling coefficient and a high Q value at a frequency greater than 3 GHz.

The present application relates to a bulk acoustic wave resonator assembly, comprising: a substrate; at least two resonators, the at least two resonators being bulk acoustic wave resonators and stacked in a thickness direction of the substrate on one side of the substrate, the at least two resonators comprising a first resonator and a second resonator, the second resonator being above the first resonator, the first resonator having a first top electrode, a first piezoelectric layer, a first bottom electrode and a first acoustic mirror, the second resonator having a second top electrode, a second piezoelectric layer, a second bottom electrode and a second acoustic mirror, wherein: an acoustic decoupling layer in the form of a cavity is provided between the first top electrode and the second bottom electrode, the acoustic decoupling layer acting as the second acoustic mirror; at least one electrode is provided with an acoustic boundary structure along a boundary of an active area of the corresponding resonator. The present application also relates to a manufacturing method of a bulk acoustic wave resonator assembly, a filter and an electronic device.

The invention relates to the technical field of circuits, in particular to a resonator filter structure, a preparation method and a filter. The resonator filter structure comprises a substrate and a circuit structure integrated on one side of the substrate, the substrate comprises a resonator region and a capacitor region; the resonator area is provided with a resonator circuit structure, and the capacitor area is provided with a capacitor structure; the acoustic mirror in the resonator circuit structure and the capacitor dielectric layer of the capacitor structure are both air and are formed through the same sacrificial layer deposition and release process.

An acoustic wave device assembly is disclosed. The acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is in contact with the first piezoelectric layer. The acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, a second interdigital transducer electrode that is in contact with the second piezoelectric layer, and a third solid acoustic mirror over the second interdigital transducer electrode. The first acoustic wave device and the second acoustic wave device being stacked on one another. The acoustic wave device assembly can include a spacer assembly that is disposed over the first piezoelectric layer.

In an acoustic mirror of a bulk-acoustic wave (BAW) device, acoustic energy is reflected at interfaces of layers having different acoustic impedances, and the wavelengths of the acoustic energy reflected at each layer depends on the layer thickness. The acoustic mirror comprises a patterned layer including a first region of a first material and a second region of the first material separated by a second material to reduce an effective thickness of the layer for acoustic reflection. As operating frequencies in wireless devices increase, current manufacturing practices may be unable to produce the correspondingly thinner layers of the acoustic mirror. Thus, the BAW device described herein can be employed to provide a reduced effective thickness for acoustic reflection with layers having an actual thickness that can be formed by existing manufacturing practices. In some examples, the first material and the second material have different acoustic impedances.

This invention relates to a semiconductor structure, comprising: a substrate; and a filter, the filter including a plurality of resonators, the plurality of resonators being bulk acoustic wave resonators, wherein: the plurality of resonators includes at least one resonator stacking unit, the resonator stacking unit including at least a first resonator and a second resonator stacked on the same side of the substrate in the thickness direction, the second resonator being above the first resonator; the first resonator including a first top electrode, a first piezoelectric layer, a first bottom electrode, and a first acoustic mirror; the second resonator including a second top electrode, a second piezoelectric layer, a second bottom electrode, and a second acoustic mirror; an acoustic decoupling layer in the form of a cavity is disposed between the first top electrode and the second bottom electrode, the acoustic decoupling layer serving as the second acoustic mirror. This invention also relates to a method for manufacturing a semiconductor structure and an electronic device.

An acoustic device includes a piezoelectric layer between a first bottom electrode and a second top electrode, and an acoustic mirror optimized for reflecting longitudinal waves and shear waves at a target operating frequency. The acoustic mirror includes a lower acoustic impedance layer and at least one higher acoustic impedance layer. In one example, the layers of the acoustic mirror alternate between a lower impedance and a higher impedance, with a first lower acoustic impedance layer adjacent the bottom electrode and a first higher acoustic impedance layer having a greater thickness than a second higher acoustic impedance layer. In another example, the acoustic mirror has a higher acoustic impedance layer having a thickness corresponding to at least half of a wavelength of the target operating frequency in the higher acoustic impedance layer. An acoustic device having an acoustic mirror optimized for both longitudinal and shear waves reduces energy loss to improve efficiency.

The present application relates to a bulk acoustic wave resonator, comprising: a substrate; a top electrode; a piezoelectric layer; a bottom electrode; and an acoustic mirror, wherein: a support layer is provided between the substrate and the resonator structure, the piezoelectric layer is a single-crystal piezoelectric layer arranged substantially parallel to the substrate; in a first cross-section parallel to the thickness direction of the resonator, through a non-electrically connected end of the bottom electrode and a non-electrically connected end of the top electrode, a portion of the outer end of the non-electrically connected end of the bottom electrode is covered by the support layer, at least a portion of the piezoelectric layer at the non-electrically connected end of the bottom electrode is removed, and at least a portion of the upper surface of the non-electrically connected end of the bottom electrode is flush with the upper surface of the support layer. The present application also relates to a filter and an electronic device.

The embodiment of the present application provides a bulk acoustic resonator, a filter, a communication device and a terminal, wherein the bulk acoustic resonator comprises: a first electrode, a second electrode and a piezoelectric layer with an arc-shaped surface; the arc-shaped surface is formed based on a target pre-stress, which is determined according to a stress generated in a process and a film layer fracture threshold; a closed first acoustic mirror cavity is formed between the first electrode, an exposed surface of the piezoelectric layer, a first supporting layer and a first substrate; a closed second acoustic mirror cavity is formed between the second electrode, an exposed surface of the piezoelectric layer, a second supporting layer and a second substrate; and the arc-shaped surface is located inside the second acoustic mirror cavity and the first acoustic mirror cavity. The bulk acoustic resonator provided by the embodiment of the present application can reduce the actual footprint of the bulk acoustic resonator.

A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).

This invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer; and a top electrode, wherein: the piezoelectric layer comprises a first layer and a second layer, an acoustic resistive layer is disposed between the first layer and the second layer, the inner edge of the acoustic resistive layer is located inside the boundary of the acoustic mirror in the horizontal direction, the acoustic resistive layer is different from the acoustic resistive layer; and the material of the first layer is different from the material of the second layer. This invention also relates to a bulk acoustic wave resonator assembly, a method for adjusting the electromechanical coupling coefficient of a bulk acoustic wave resonator, a method for adjusting the difference in electromechanical coupling coefficients of resonators in a bulk acoustic wave resonator assembly, a filter, and an electronic device.

The present application relates to a bulk acoustic wave resonator and a manufacturing method thereof, the resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein: the piezoelectric layer is a flat piezoelectric layer; a support layer is arranged between the substrate and the piezoelectric layer, the piezoelectric layer is a flat piezoelectric layer, the piezoelectric layer and the substrate are arranged apart from each other and substantially parallel to each other in a thickness direction of the resonator, and a high linearity material layer is arranged outside the non-electrode connecting end of the bottom electrode in a horizontal direction. The present application also relates to a filter and an electronic device.

This invention relates to a bulk acoustic resonator and its manufacturing method. The resonator includes: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein the overlapping region of the top electrode, bottom electrode, piezoelectric layer, and acoustic mirror forms the effective region of the resonator; the top electrode has a first acoustic structure disposed along the effective region; the edge of the non-connected end of the bottom electrode is located outside the edge of the acoustic mirror; and the bottom electrode has a second acoustic structure corresponding to the first acoustic structure disposed along the effective region. This invention also relates to a filter and an electronic device.

An acoustic wave device assembly is disclosed. The acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is embedded in the piezoelectric layer. The acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, and a second interdigital transducer electrode that is in contact with the second piezoelectric layer. The second acoustic wave device is stacked over the first acoustic wave device. The first acoustic wave device and the second acoustic wave device are spaced by a spacer assembly such that a cavity is formed between the first acoustic wave device and the second acoustic wave device.

An acoustic wave resonator is disclosed, comprising a substrate (10), a stress-compensating layer (20), an acoustic mirror (30), a lower electrode (33), a piezoelectric stack (40), and an upper electrode (43) sequentially stacked to define an active area (C). The stress-compensating layer (20) includes a planarized region (21) that overlaps the active area (C) and has a surface roughness of less than 5 nm.

A BAW resonator according to the present invention comprises an acoustic mirror layer, a first electrode, a piezoelectric layer, and a second electrode that are stacked sequentially on a support substrate, an active region of the piezoelectric layer that is sandwiched between the first electrode and the second electrode in a plan view and that causes the piezoelectric layer to resonate, and an inactive region other than the active region. The Poisson's ratio of the piezoelectric layer is 1 / 3 or more. The acoustic mirror layer is a multilayer film in which high acoustic impedance layers and low acoustic impedance layers are stacked alternately in one or more pairs. The high acoustic impedance layers are disposed inward of positions corresponding to the active region.

The present application relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer; and a top electrode, wherein: the piezoelectric layer comprises a first layer and a second layer, the second layer is above the first layer in a thickness direction of the resonator; the resonator further comprises a connecting-end acoustic resistance layer provided at an electrode connecting end of the top electrode, an inner edge of the connecting-end acoustic resistance layer is inside an acoustic mirror boundary in a horizontal direction; an outer end edge of the first layer and / or the second layer is inside an outer edge of the connecting-end acoustic resistance layer in the horizontal direction. The present application also relates to a bulk acoustic wave resonator assembly, a filter and an electronic device.

The present application relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode disposed above the substrate; a top electrode; and a piezoelectric layer disposed above the bottom electrode and between the bottom electrode and the top electrode, wherein: an overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in a resonator thickness direction constitutes an effective area of the resonator; the piezoelectric layer is provided with a recess structure, the recess structure has an inner edge and an outer edge, and in a vertical projection, the inner edge of the recess structure coincides with or is outside the edge of the top electrode. The present application also relates to a filter having the above-mentioned resonator, and an electronic device having the above-mentioned resonator or filter.

The present application relates to a bulk acoustic wave resonator assembly, comprising: a substrate; at least two resonators, the at least two resonators being bulk acoustic wave resonators and stacked in a thickness direction of the substrate on one side of the substrate, the at least two resonators comprising a first resonator and a second resonator, the second resonator being above the first resonator, the first resonator having a first top electrode, a first piezoelectric layer, a first bottom electrode and a first acoustic mirror, the second resonator having a second top electrode, a second piezoelectric layer, a second bottom electrode and a second acoustic mirror. An acoustic decoupling layer in the form of a cavity is provided between the first top electrode and the second bottom electrode, the acoustic decoupling layer acting as the second acoustic mirror; a boundary of the cavity is outside a non-electrode-connection end of the first bottom electrode in a horizontal direction; and a boundary of the cavity is outside a non-electrode-connection end of the second top electrode in the horizontal direction. The present application also relates to a filter and an electronic device.

The application discloses a resonator and a forming method thereof, and an electronic device. The resonator comprises a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer, a top electrode, a patterned load layer, and a passivation layer. In the patterned load layer, the proportion of the load material coverage area to the total effective area of the resonator is defined as a pattern duty cycle, which is denoted as r and satisfies 0≤r≤1. The resonator satisfies the following limited condition: (Fs1-Fs2) / Fs1≤K, wherein Fs1 is the series resonance frequency of the resonator without the load layer, Fs2 is the series resonance frequency of the resonator with the load layer with r=1, and K is a preset threshold. The thickness of the load layer is controlled so that the resonator satisfies the limited condition of (Fs1-Fs2) / Fs1≤K. At this time, the use of the patterned load layer basically has no impact on the performance of the resonator and does not have obvious deterioration, thereby improving the device yield. The technical scheme of the application has the advantages of simplicity and the like.

A stacked acoustic wave device assembly is disclosed. The stacked acoustic wave device assembly can include a first acoustic wave device including a first solid acoustic mirror on a first substrate, a first piezoelectric layer on the first solid acoustic mirror and a first interdigital transducer electrode in contact with the first piezoelectric layer. The stacked acoustic wave device assembly can include a second acoustic wave device including a second solid acoustic mirror on a second substrate, a second piezoelectric layer on the second solid acoustic mirror and a second interdigital transducer electrode in contact with the second piezoelectric layer. The stacked acoustic wave device assembly can include a third solid acoustic mirror positioned between the first acoustic wave device and the second acoustic wave device.

The application discloses a resonator and a forming method thereof, and an electronic device. The forming method of the resonator comprises the following steps: forming an acoustic mirror structure on a substrate; forming a bottom electrode on the acoustic mirror structure; forming a piezoelectric layer on the bottom electrode; forming a top electrode on the piezoelectric layer; and further comprising the following steps: forming a patterned load layer below the bottom electrode, below the piezoelectric layer, below the top electrode, above the top electrode or inside each film layer, which specifically comprises the following steps: forming a patterned photoresist layer, the thickness of the photoresist layer is less than a preset thickness threshold; depositing the patterned load layer; and removing the photoresist layer. The application guarantees the pattern precision of the patterned load layer by controlling the thickness of the photoresist layer, the processing result has better uniformity and repeatability, has a favorable influence on the performance of the resonator, and improves the device yield.

A device for particle sensing is disclosed. The device includes a sensor including a bulk acoustic wave resonator having a resonant frequency, an acoustic mirror arranged to support the resonator, and a heater in thermal communication with the resonator such that a resonator temperature is based on a heater temperature. The device also includes circuitry connected to the sensor. The circuitry comprises a driver configured to drive the heater with a driver signal having a constant periodic cycle, and an oscillator configured to generate an output signal indicative of the resonant frequency. The resonant frequency is modulated by the resonator temperature.

The present invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer comprising at least a first layer and a second layer stacked adjacent to each other in a thickness direction, the first layer having a first thickness, the second layer having a second thickness; and a top electrode, wherein: at least one of the first layer and the second layer is a single-crystal piezoelectric layer, the resonator having an electromechanical coupling coefficient Kt 2 , and Kt 2 > 10%. The present invention also relates to a method of manufacturing a bulk acoustic wave resonator, a filter and an electronic device.

The present application relates to a bulk acoustic wave resonator and a manufacturing method thereof. The resonator includes a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer, wherein: a coincident region of the top electrode, the piezoelectric layer, the bottom electrode, and the acoustic mirror in a thickness direction of the resonator constitutes an effective region of the resonator; the top electrode and / or the bottom electrode is provided with a protruding structure along the effective region, the protruding structure includes a first protruding layer and a second protruding layer, the first protruding layer is arranged adjacent to the piezoelectric layer, an outer end of the second protruding layer is away from the piezoelectric layer in the thickness direction of the resonator and is superposed with the first protruding layer, a portion where the first protruding layer and the second protruding layer are superposed with each other constitutes a superposed portion; the protruding structure is provided with a single-layer portion inside the superposed portion, the single-layer portion is arranged between the corresponding electrode and the piezoelectric layer; and a ratio of a thickness of the single-layer portion to a thickness of the superposed portion is not greater than 0.62. The present application also relates to a filter and an electronic device.

The present application relates to a bulk acoustic wave resonator and a manufacturing method thereof. The resonator comprises a substrate, a bottom electrode, a top electrode, and a piezoelectric layer disposed between the bottom electrode and the top electrode, wherein: the bottom electrode is a gap electrode having a void layer, the void layer is at a distance from both a top surface and a bottom surface of the gap electrode in a thickness direction of the gap electrode, and the void layer forms an acoustic mirror cavity of the resonator or an acoustic mirror structure is disposed in the void layer; the substrate is provided with at least one electrically connecting through hole, one end of the through hole is connected to the bottom electrode, and the other end is adapted to be connected to a pad located on the lower side of the substrate. The present application also relates to a filter having the above-mentioned resonator and an electronic device having the filter or the resonator.