67 results about "Acoustic mirror" patented technology

A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a first solid acoustic mirror, a second solid acoustic mirror, a piezoelectric layer that is positioned between the first solid acoustic mirror and the second solid acoustic mirror, an interdigital transducer electrode on the piezoelectric layer, and a support substrate arranged to dissipate heat associated with the bulk acoustic wave. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the bulk acoustic wave. The first solid acoustic mirror is positioned on the support substrate.

A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).

A stacked acoustic wave device assembly is disclosed. The stacked acoustic wave device assembly can include a first acoustic wave device including a first double acoustic mirror structure having a first solid acoustic mirror and a second solid acoustic mirror, and a first piezoelectric layer between the first and second solid acoustic mirrors. The stacked acoustic wave device assembly can include a second acoustic wave device including a second double acoustic mirror structure having a third solid acoustic mirror and a fourth acoustic mirror, and a second piezoelectric layer between the third and fourth acoustic mirrors. The second acoustic wave device is vertically stacked on the first acoustic wave device such that the second solid acoustic mirror and the fourth solid acoustic mirror are positioned between the first and second piezoelectric layers.

A bulk acoustic wave resonator assembly comprises at least two resonators arranged on the same substrate, each resonator comprises an acoustic mirror structure, a bottom electrode, a piezoelectric layer and a top electrode, and an overlapping area of the acoustic mirror structure, the bottom electrode, the piezoelectric layer and the top electrode in the direction perpendicular to the substrate forms an effective area of the resonator; the at least two resonators comprise a first resonator and a second resonator, the first resonator comprises an annular first effective area, and the second resonator comprises a second effective area; the second effective area is nested in the annular first effective area, the first effective area and the second effective area are connected in parallel through a plurality of groups of connecting parts, and each group of connecting parts comprises an input end and an output end. According to the bulk acoustic wave resonator, through nested connection of the two resonators, compared with conventional side-by-side connection, the occupied area is smaller, the heat dissipation effect of the nested resonator assembly is better, and nonlinearity of the resonators can be effectively reduced.

A stacked acoustic wave device assembly is disclosed. The stacked acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is in contact with the first piezoelectric layer. The stacked acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, and a second interdigital transducer electrode that is in contact with the second piezoelectric layer. The second acoustic wave device is stacked over the first acoustic wave device. The first acoustic wave device and the second acoustic wave device are spaced by a spacer assembly such that a cavity is formed between the first acoustic wave device and the second acoustic wave device.

The application provides a resonator, a filter, an electronic device and a manufacturing method of the resonator. The resonator comprises a substrate, a sandwich electrode, an acoustic mirror, a bottom electrode structure, a piezoelectric layer and a top electrode, the bottom electrode structure and the sandwich electrode are collectively arranged outside the acoustic mirror, the sandwich electrode and the bottom electrode structure are connected and conductive to each other, the bottom electrode structure comprises a seed layer, a first bottom electrode layer and a second bottom electrode layer, the first bottom electrode layer is formed on the seed layer, and the second bottom electrode layer is formed on the first bottom electrode layer and covers the first bottom electrode layer; and the overlapping parts of the acoustic mirror, the bottom electrode structure, the piezoelectric layer and the top electrode collectively form an effective area of the resonator. The application has good resonator performance.

The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom and top electrodes, wherein an acoustic impedance structure is disposed between the piezoelectric layer and the substrate; the acoustic impedance structure comprises a first acoustic impedance layer and a second acoustic impedance layer disposed adjacent to each other in a lateral direction, the first acoustic impedance layer and the second acoustic impedance layer having different acoustic impedances; the acoustic mirror is located between the first acoustic impedance layers in the lateral direction of the resonator; and the resonator further comprises a temperature compensation layer. The present invention also relates to a filter and an electronic device.

The application relates to a bulk acoustic wave resonator, comprising a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein: an overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in a thickness direction of the resonator constitutes an effective area of the resonator; an edge of the top electrode around the effective area is further provided with a conductive layer, the conductive layer is electrically connected with the top electrode; and at least a part of a bottom surface of an inner end and / or an outer end of the conductive layer is provided with a gap with an upper surface of the top electrode to form a suspended structure. The application also relates to a manufacturing method of the bulk acoustic wave resonator, a filter and an electronic device.

Provided is an acoustic resonator in a transverse excitation shear mode. The acoustic resonator comprises: an acoustic mirror (120), which comprises at least one first acoustic reflecting layer (121, 123, 125) and at least one second acoustic reflecting layer (122, 124), wherein the acoustic impedance of each first acoustic reflecting layer is less than that of each second acoustic reflecting layer; a piezoelectric layer (130), which is arranged on the acoustic mirror, and which comprises lithium niobate of a single crystal material and / or lithium tantalate of a single crystal material; electrode units (142, 143, 144), which are arranged on the piezoelectric layer (130) and are used for forming an electric field; and transverse reflectors (152, 154), which are arranged on the piezoelectric layer, are used for transversely reflecting acoustic waves, and can have a high electromechanical coupling coefficient and a high Q value at a frequency greater than 3 GHz.

The present application relates to a bulk acoustic wave resonator assembly, comprising: a substrate; at least two resonators, the at least two resonators being bulk acoustic wave resonators and stacked in a thickness direction of the substrate on one side of the substrate, the at least two resonators comprising a first resonator and a second resonator, the second resonator being above the first resonator, the first resonator having a first top electrode, a first piezoelectric layer, a first bottom electrode and a first acoustic mirror, the second resonator having a second top electrode, a second piezoelectric layer, a second bottom electrode and a second acoustic mirror, wherein: an acoustic decoupling layer in the form of a cavity is provided between the first top electrode and the second bottom electrode, the acoustic decoupling layer acting as the second acoustic mirror; at least one electrode is provided with an acoustic boundary structure along a boundary of an active area of the corresponding resonator. The present application also relates to a manufacturing method of a bulk acoustic wave resonator assembly, a filter and an electronic device.

The invention relates to the technical field of circuits, in particular to a resonator filter structure, a preparation method and a filter. The resonator filter structure comprises a substrate and a circuit structure integrated on one side of the substrate, the substrate comprises a resonator region and a capacitor region; the resonator area is provided with a resonator circuit structure, and the capacitor area is provided with a capacitor structure; the acoustic mirror in the resonator circuit structure and the capacitor dielectric layer of the capacitor structure are both air and are formed through the same sacrificial layer deposition and release process.

The present application relates to a bulk acoustic wave resonator and a manufacturing method thereof, the resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; a piezoelectric layer disposed between the bottom electrode and the top electrode; a temperature compensation layer structure disposed between the bottom electrode and the piezoelectric layer, the temperature compensation layer structure comprising a temperature compensation layer, wherein: the resonator further comprises a protective layer; at a non-electrode connecting end of the top electrode, the protective layer covers an upper surface of the temperature compensation layer structure along at least a portion of a circumferential direction of the temperature compensation layer structure, a portion of the upper surface of the temperature compensation layer structure is exposed via an opening defined by an inner edge of the protective layer, the opening is at least partially within an active area of the resonator; and at the non-electrode connecting end of the top electrode, the inner edge of the protective layer is flush with or inward of the non-electrode connecting end of the top electrode in a horizontal direction. The present application also relates to a filter and an electronic device.

An acoustic wave device assembly is disclosed. The acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is in contact with the first piezoelectric layer. The acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, a second interdigital transducer electrode that is in contact with the second piezoelectric layer, and a third solid acoustic mirror over the second interdigital transducer electrode. The first acoustic wave device and the second acoustic wave device being stacked on one another. The acoustic wave device assembly can include a spacer assembly that is disposed over the first piezoelectric layer.

In an acoustic mirror of a bulk-acoustic wave (BAW) device, acoustic energy is reflected at interfaces of layers having different acoustic impedances, and the wavelengths of the acoustic energy reflected at each layer depends on the layer thickness. The acoustic mirror comprises a patterned layer including a first region of a first material and a second region of the first material separated by a second material to reduce an effective thickness of the layer for acoustic reflection. As operating frequencies in wireless devices increase, current manufacturing practices may be unable to produce the correspondingly thinner layers of the acoustic mirror. Thus, the BAW device described herein can be employed to provide a reduced effective thickness for acoustic reflection with layers having an actual thickness that can be formed by existing manufacturing practices. In some examples, the first material and the second material have different acoustic impedances.

This invention relates to a semiconductor structure, comprising: a substrate; and a filter, the filter including a plurality of resonators, the plurality of resonators being bulk acoustic wave resonators, wherein: the plurality of resonators includes at least one resonator stacking unit, the resonator stacking unit including at least a first resonator and a second resonator stacked on the same side of the substrate in the thickness direction, the second resonator being above the first resonator; the first resonator including a first top electrode, a first piezoelectric layer, a first bottom electrode, and a first acoustic mirror; the second resonator including a second top electrode, a second piezoelectric layer, a second bottom electrode, and a second acoustic mirror; an acoustic decoupling layer in the form of a cavity is disposed between the first top electrode and the second bottom electrode, the acoustic decoupling layer serving as the second acoustic mirror. This invention also relates to a method for manufacturing a semiconductor structure and an electronic device.

The application relates to a semiconductor structure, a manufacturing method thereof and an electronic device. The assembly comprises a substrate, a plurality of bulk acoustic resonators and at least one redundant structure. At least two resonators are stacked on one side of the substrate to form a resonator stack unit. An acoustic decoupling layer is arranged between the top electrode of a lower resonator and the bottom electrode of an upper resonator, and the acoustic decoupling layer constitutes an acoustic mirror of the upper resonator. The at least one redundant structure is stacked with at least one resonator in the plurality of resonators on the one side of the substrate to form a redundant stack unit, the redundant stack unit is juxtaposed with the resonator stack unit in the horizontal direction on the one side of the substrate, the redundant structure comprises a redundant piezoelectric layer, the redundant piezoelectric layer is in the same layer as the corresponding piezoelectric layer in the resonator stack unit, and the top electrode, the piezoelectric layer and the bottom electrode of the resonator in the redundant stack unit are arranged in the same layer as the top electrode, the piezoelectric layer and the bottom electrode of the resonator in the same layer in the resonator stack unit.

An acoustic device includes a piezoelectric layer between a first bottom electrode and a second top electrode, and an acoustic mirror optimized for reflecting longitudinal waves and shear waves at a target operating frequency. The acoustic mirror includes a lower acoustic impedance layer and at least one higher acoustic impedance layer. In one example, the layers of the acoustic mirror alternate between a lower impedance and a higher impedance, with a first lower acoustic impedance layer adjacent the bottom electrode and a first higher acoustic impedance layer having a greater thickness than a second higher acoustic impedance layer. In another example, the acoustic mirror has a higher acoustic impedance layer having a thickness corresponding to at least half of a wavelength of the target operating frequency in the higher acoustic impedance layer. An acoustic device having an acoustic mirror optimized for both longitudinal and shear waves reduces energy loss to improve efficiency.

This BAW resonator is a BAW resonator in which a support substrate, an acoustic mirror layer disposed on the support substrate, a first electrode, a piezoelectric layer, and a second electrode are laminated, and is characterized in that: on the surface of the piezoelectric layer on the side that is in contact with the second electrode, the piezoelectric layer is provided with a first electrode and a second electrode; a resonator region defining layer comprising a metal layer is provided at a distance from the second electrode, and the first electrode extends further outward than the piezoelectric layer. The resonator region defining layer is provided on a portion of a surface of the piezoelectric layer on the first electrode side, on an end surface of the piezoelectric layer, and on an exposed portion of the first electrode.

The present application relates to a bulk acoustic wave resonator, comprising: a substrate; a top electrode; a piezoelectric layer; a bottom electrode; and an acoustic mirror, wherein: a support layer is provided between the substrate and the resonator structure, the piezoelectric layer is a single-crystal piezoelectric layer arranged substantially parallel to the substrate; in a first cross-section parallel to the thickness direction of the resonator, through a non-electrically connected end of the bottom electrode and a non-electrically connected end of the top electrode, a portion of the outer end of the non-electrically connected end of the bottom electrode is covered by the support layer, at least a portion of the piezoelectric layer at the non-electrically connected end of the bottom electrode is removed, and at least a portion of the upper surface of the non-electrically connected end of the bottom electrode is flush with the upper surface of the support layer. The present application also relates to a filter and an electronic device.

The present application provides a kind of resonator, resonator assembly, filter and electronic equipment.The resonator includes substrate;Acoustic mirror;Seed layer;Bottom electrode, formed on seed layer;Piezoelectric layer;And top electrode;The overlapping part of acoustic mirror, bottom electrode, piezoelectric layer and top electrode collectively forms the effective area of resonator;Wherein, the area of seed layer covering effective area in the transverse direction of resonator is less than the area of effective area, to adjust the effective electromechanical coupling coefficient of resonator by changing the area of seed layer covering effective area.The present application can adjust the effective electromechanical coupling coefficient and other parameters of resonator by changing the area of seed layer covering effective area.

The embodiment of the present application provides a bulk acoustic resonator, a filter, a communication device and a terminal, wherein the bulk acoustic resonator comprises: a first electrode, a second electrode and a piezoelectric layer with an arc-shaped surface; the arc-shaped surface is formed based on a target pre-stress, which is determined according to a stress generated in a process and a film layer fracture threshold; a closed first acoustic mirror cavity is formed between the first electrode, an exposed surface of the piezoelectric layer, a first supporting layer and a first substrate; a closed second acoustic mirror cavity is formed between the second electrode, an exposed surface of the piezoelectric layer, a second supporting layer and a second substrate; and the arc-shaped surface is located inside the second acoustic mirror cavity and the first acoustic mirror cavity. The bulk acoustic resonator provided by the embodiment of the present application can reduce the actual footprint of the bulk acoustic resonator.

A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).

This invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer; and a top electrode, wherein: the piezoelectric layer comprises a first layer and a second layer, an acoustic resistive layer is disposed between the first layer and the second layer, the inner edge of the acoustic resistive layer is located inside the boundary of the acoustic mirror in the horizontal direction, the acoustic resistive layer is different from the acoustic resistive layer; and the material of the first layer is different from the material of the second layer. This invention also relates to a bulk acoustic wave resonator assembly, a method for adjusting the electromechanical coupling coefficient of a bulk acoustic wave resonator, a method for adjusting the difference in electromechanical coupling coefficients of resonators in a bulk acoustic wave resonator assembly, a filter, and an electronic device.

The present application relates to a bulk acoustic wave resonator and a manufacturing method thereof, the resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein: the piezoelectric layer is a flat piezoelectric layer; a support layer is arranged between the substrate and the piezoelectric layer, the piezoelectric layer is a flat piezoelectric layer, the piezoelectric layer and the substrate are arranged apart from each other and substantially parallel to each other in a thickness direction of the resonator, and a high linearity material layer is arranged outside the non-electrode connecting end of the bottom electrode in a horizontal direction. The present application also relates to a filter and an electronic device.

This invention relates to a bulk acoustic resonator and its manufacturing method. The resonator includes: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein the overlapping region of the top electrode, bottom electrode, piezoelectric layer, and acoustic mirror forms the effective region of the resonator; the top electrode has a first acoustic structure disposed along the effective region; the edge of the non-connected end of the bottom electrode is located outside the edge of the acoustic mirror; and the bottom electrode has a second acoustic structure corresponding to the first acoustic structure disposed along the effective region. This invention also relates to a filter and an electronic device.

An acoustic wave device assembly is disclosed. The acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is embedded in the piezoelectric layer. The acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, and a second interdigital transducer electrode that is in contact with the second piezoelectric layer. The second acoustic wave device is stacked over the first acoustic wave device. The first acoustic wave device and the second acoustic wave device are spaced by a spacer assembly such that a cavity is formed between the first acoustic wave device and the second acoustic wave device.

A BAW resonator according to the present invention comprises: an acoustic mirror layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially laminated on a support base material; and an active region that, in a plan view, is a region sandwiched between the first electrode and the second electrode in the piezoelectric layer and resonates the piezoelectric layer, and a non-active region other than the active region. The acoustic mirror layer is a multilayer film in which one or more pairs of high acoustic impedance layers and low acoustic impedance layers are alternately laminated. The high acoustic impedance layer has a first high acoustic impedance layer that is disposed at a position corresponding to the active region and contains a metal, and a second high acoustic impedance layer that is disposed at a position corresponding to the inactive region and contains a dielectric.

An acoustic wave resonator is disclosed, comprising a substrate (10), a stress-compensating layer (20), an acoustic mirror (30), a lower electrode (33), a piezoelectric stack (40), and an upper electrode (43) sequentially stacked to define an active area (C). The stress-compensating layer (20) includes a planarized region (21) that overlaps the active area (C) and has a surface roughness of less than 5 nm.

A BAW resonator according to the present invention comprises an acoustic mirror layer, a first electrode, a piezoelectric layer, and a second electrode that are stacked sequentially on a support substrate, an active region of the piezoelectric layer that is sandwiched between the first electrode and the second electrode in a plan view and that causes the piezoelectric layer to resonate, and an inactive region other than the active region. The Poisson's ratio of the piezoelectric layer is 1 / 3 or more. The acoustic mirror layer is a multilayer film in which high acoustic impedance layers and low acoustic impedance layers are stacked alternately in one or more pairs. The high acoustic impedance layers are disposed inward of positions corresponding to the active region.

The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom and top electrodes, wherein an acoustic impedance structure is disposed between the piezoelectric layer and the substrate; the acoustic impedance structure comprises a first acoustic impedance layer and a second acoustic impedance layer disposed adjacent to each other in a lateral direction, the first acoustic impedance layer and the second acoustic impedance layer having different acoustic impedances; the acoustic mirror is positioned between the first acoustic impedance layers in the lateral direction of the resonator, and the edges of the bottom and / or top electrodes are provided with protruding structures and / or recessed structures. The present invention also relates to a bulk acoustic wave resonator component, a filter, and an electronic device.