Bulk acoustic wave resonator with composite array quality charge, filter and electronic equipment

Abstract

The invention discloses a bulk acoustic wave resonator. The bulk acoustic wave resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode. A mass load is arranged on the top electrode, the mass load comprises at least two array structures, and the at least two array structures comprise a first array structure and a second array structure; a first dot array is formed in the center of a first array element of the first array structure; the centers of the second array elements of the second array structure form a second dot array, the second dot array is obtained by planar rotation or planar translation relative to the first dot array, the adjacent array elements of the two array structures are spaced apart from each other, and the size of the first array element is different from the size of the second array element. The invention further discloses a filter with the resonator and electronic equipment with the filter or the resonator.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a bulk acoustic wave resonator, a filter, and an electronic device with the resonator or the filter. Background technique [0002] As the basic elements of electronic equipment, electronic devices have been widely used, including mobile phones, automobiles, home appliances, etc. In addition, technologies such as artificial intelligence, the Internet of Things, and 5G communications that will change the world in the future still need to rely on electronic devices as the basis. [0003] Film Bulk Acoustic Resonator (FBAR, also known as Bulk Acoustic Resonator, also known as BAW), as an important member of piezoelectric devices, is playing an important role in the field of communication, especially FBAR filters in radio frequency filters The field market share is increasing. FBAR has excellent characteristics such as small size, high resonance frequency, high quality factor, large pow...

AI Technical Summary

Problems solved by technology

However, the single pattern structure may lead to spurious modes or loss enhancement in certain frequency ranges during the process of introducing mass loading, thereby impairing the electrical performance of the resonator.

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