Bulk acoustic wave resonator having piezoelectric layer with insertion structure, filter, and electronic device
Patent Information
- Authority / Receiving Office
- CN Β· China
- Current Assignee / Owner
- TIANJIN UNIV
- Publication Date
- 2020-04-14
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Abstract
Description
technical field
[0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter, and an electronic device having one of the above components. Background technique
[0002] Bulk acoustic wave filters have the advantages of low insertion loss, high square factor, and high power capacity. Therefore, they are widely used in contemporary wireless communication systems and are important components that determine the quality of radio frequency signals entering and leaving the communication system. The performance of a bulk acoustic wave filter is determined by the bulk acoustic wave resonator that constitutes it. For example, the resonant frequency of the bulk acoustic wave resonator determines the operating frequency of the filter, the effective electromechanical coupling coefficient determines the bandwidth of the filter, and the quality factor determines the filter insertion. loss. When the filter ...